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2. Investigation of thermal crosstalk between SOI FETs by the subthreshold sensing technique

Author

Shamsa, Manu, Solomon, Paul M., Jenkins, Keith A., Balandin, Alexander A., and Haensch, Wilfried

Subjects
Silicon-on-isolator -- Thermal properties, Silicon-on-isolator -- Electric properties, Field-effect transistors -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The transient thermal crosstalk between the field-effect transistors (FETs) implemented on a silicon-on-insulator (SOI) substrate is examined. Findings reveal the achievement of a temperature resolution of ~50 mK, a time resolution of 5 ns and a temperature sensitivity of ~0.6 A/K.

Published
2008

3. A general approach for the performance assessment of nanoscale silicon FETs

Author

Jing Wang, Solomon, Paul M., and Lundstrom, Mark

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Metal oxide semiconductor field effect transistors -- Electric properties, Field-effect transistors -- Analysis, Field-effect transistors -- Electric properties, Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

The study stated that a general approach, the EQ approach, to assess the scaling potential of nanoscale Si FETs based on both gate control (electrostatics) and quantum confinement. The report stated that with this EQ approach, the cylindrical wire FET and the planar double-gate MOSFET have approximately equal scaling capability, while the nonplanar wire structures are significantly better where the effective mass in the confinement direction of the planar MOSFET is relatively small.

Published
2004

5. Heterojunction FETs in III-V compounds

Author

Kiehl, Richard A., Solomon, Paul M., and Frank, David J.

Subjects
Field-Effect Transistors, Research and Development, Logic Circuitry, Performance Improvement, Insulators, Thomas J. Watson Research Center
Published
1990

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