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In this work, we couple theoretical and experimental approaches to understand and reduce the losses of wide bandgap Br-rich perovskite pin devices at open-circuit voltage (VOC) and short-circuit current (JSC) conditions. A mismatch between the internal quasi-Fermi level splitting (QFLS) and the external VOC is detrimental for these devices. We demonstrate that modifying the perovskite top-surface with guanidinium-Br and imidazolium-Br forms a low-dimensional perovskite phase at the n-interface, suppressing the QFLS-VOC mismatch, and boosting the VOC. Concurrently, the use of an ionic interlayer or a self-assembled monolayer at the p-interface reduces the inferred field screening induced by mobile ions at JSC, promoting charge extraction and raising the JSC. The combination of the n- and p-type optimizations allows us to approach the thermodynamic potential of the perovskite absorber layer, resulting in 1 cm2 devices with performance parameters of VOCs up to 1.29 V, fill factors above 80% and JSCs up to 17 mA/cm2, in addition to a thermal stability T80 lifetime of more than 3500 h at 85 °C.

Long diffusion lengths of photoexcited charge carriers are crucial for high power conversion efficiencies of photoelectrochemical and photovoltaic devices. Time resolved photoconductance measurements are often used to determine diffusion lengths in conventional semiconductors. However, effects such as polaron formation or multiple trapping can lead to time varying mobilities and lifetimes that are not accounted for in the conventional calculation of the diffusion length. Here, a generalized analysis is presented that is valid for time dependent mobilities and time dependent lifetimes. The diffusion length is determined directly from the integral of a photoconductivity transient and can be applied regardless of the nature of carrier relaxation. To demonstrate our approach, photoconductivity transients are measured from 100 fs to 1 s by the combination of time resolved terahertz and microwave spectroscopy for BiVO4, one of the most studied metal oxide photoanodes for photoelectrochemical water splitting. The temporal evolution of charge carrier displacement is monitored and converges after about 100 ns to a diffusion length of about 15 nm, which rationalizes the photocurrent loss in the corresponding photoelectrochemical device. The presented method is further validated on a amp; 8722;Si H, c amp; 8722;Si, and halide perovskite, which underlines its potential to determine the diffusion length in a wide range of semiconductors, including disordered materials

Funder: Alexander von Humboldt Foundation; Id: http://dx.doi.org/10.13039/100005156, Perovskite semiconductors are an attractive option to overcome the limitations of established silicon based photovoltaic (PV) technologies due to their exceptional opto‐electronic properties and their successful integration into multijunction cells. However, the performance of single‐ and multijunction cells is largely limited by significant nonradiative recombination at the perovskite/organic electron transport layer junctions. In this work, the cause of interfacial recombination at the perovskite/C60 interface is revealed via a combination of photoluminescence, photoelectron spectroscopy, and first‐principle numerical simulations. It is found that the most significant contribution to the total C60‐induced recombination loss occurs within the first monolayer of C60, rather than in the bulk of C60 or at the perovskite surface. The experiments show that the C60 molecules act as deep trap states when in direct contact with the perovskite. It is further demonstrated that by reducing the surface coverage of C60, the radiative efficiency of the bare perovskite layer can be retained. The findings of this work pave the way toward overcoming one of the most critical remaining performance losses in perovskite solar cells.

Interfaces play a crucial role in determining perovskite solar cells, (PSCs) performance and stability. It is therefore of great importance to constantly work toward improving their design. This study shows the advantages of using a hole-transport material (HTM) that can anchor to the perovskite surface through halogen bonding (XB). A halo-functional HTM (PFI) is compared to a reference HTM (PF), identical in optoelectronic properties and chemical structure but lacking the ability to form XB. The interaction between PFI and perovskite is supported by simulations and experiments. XB allows the HTM to create an ordered and homogenous layer on the perovskite surface, thus improving the perovskite/HTM interface and its energy level alignment. Thanks to the compact and ordered interface, PFI displays increased resistance to solvent exposure compared to its not-interacting counterpart. Moreover, PFI devices show suppressed nonradiative recombination and reduced hysteresis, with a Voc enhancement of ≥20 mV and a remarkable stability, retaining more than 90% efficiency after 550 h of continuous maximum-power-point tracking. This work highlights the potential that XB can bring to the context of PSCs, paving the way for a new halo-functional design strategy for charge-transport layers, which tackles the challenges of charge transport and interface improvement simultaneously. publishedVersion

Organic-inorganic perovskites are one of the most promising photovoltaic materials for the design of next generation solar cells. The lead-based perovskite prepared with methylammonium and iodide was the first in demonstrating high power conversion efficiency, and it remains one of the most used materials today. However, perovskites prepared by mixing several halides and several cations systematically yield higher efficiencies than "pure" methylammonium lead iodide (MAPbI3) devices. In this work, we unravel the excited-state properties of a mixed-halide (iodide and bromide) and mixed-cation (methylammonium and formamidinium) perovskite. Combining time-resolved photoluminescence, transient absorption, and optical-pump-terahertz-probe experiments with density functional theory calculations, we show that the population of higher-lying excited states in the mixed material increases the lifetime of photogenerated charge carriers upon well above-bandgap excitation. We suggest that alloying different halides and different cations reduces the structural symmetry of the perovskite, which partly releases the selection rules to populate the higher-energy states upon light absorption. Our investigation thus shows that mixed halide perovskites should be considered as an electronically different material than MAPbI3, paving the way toward further materials optimization and improved power conversion efficiency of perovskite solar cells.

Perovskite solar cells are among the most exciting photovoltaic systems as they combine low recombination losses, ease of fabrication, and high spectral tunability. The Achilles heel of this technology is the device stability due to the ionic nature of the perovskite crystal, rendering it highly hygroscopic, and the extensive diffusion of ions especially at increased temperatures. Herein, we demonstrate the application of a simple solution-processed perfluorinated self-assembled monolayer (p-SAM) that not only enhances the solar cell efficiency, but also improves the stability of the perovskite absorber and, in turn, the solar cell under increased temperature or humid conditions. The p-i-n-type perovskite devices employing these SAMs exhibited power conversion efficiencies surpassing 21%. Notably, the best performing devices are stable under standardized maximum power point operation at 85 °C in inert atmosphere (ISOS-L-2) for more than 250 h and exhibit superior humidity resilience, maintaining ∼95% device performance even if stored in humid air in ambient conditions over months (∼3000 h, ISOS-D-1). Our work, therefore, demonstrates a strategy towards efficient and stable perovskite solar cells with easily deposited functional interlayers.

Efficiency from hole-selective contacts Perovskite/silicon tandem solar cells must stabilize a perovskite material with a wide bandgap and also maintain efficient charge carrier transport. Al-Ashouri et al. stabilized a perovskite with a 1.68–electron volt bandgap with a self-assembled monolayer that acted as an efficient hole-selective contact that minimizes nonradiative carrier recombination. In air without encapsulation, a tandem silicon cell retained 95% of its initial power conversion efficiency of 29% after 300 hours of operation. Science , this issue p. 1300

Inorganic perovskites with cesium (Cs+) as the cation have great potential as photovoltaic materials if their phase purity and stability can be addressed. Herein, a series of inorganic perovskites is studied, and it is found that the power conversion efficiency of solar cells with compositions CsPbI1.8Br1.2, CsPbI2.0Br1.0, and CsPbI2.2Br0.8 exhibits a high dependence on the initial annealing step that is found to significantly affect the crystallization and texture behavior of the final perovskite film. At its optimized annealing temperature, CsPbI1.8Br1.2 exhibits a pure orthorhombic phase and only one crystal orientation of the (110) plane. Consequently, this allows for the best efficiency of up to 14.6% and the longest operational lifetime, T-S80, of approximate to 300 h, averaged of over six solar cells, during the maximum power point tracking measurement under continuous light illumination and nitrogen atmosphere. This work provides essential progress on the enhancement of photovoltaic performance and stability of CsPbI3 - xBrx perovskite solar cells., Zweitver��ffentlichungen der Universit��t Potsdam : Mathematisch-Naturwissenschaftliche Reihe; 1210

Approaches to boost the efficiency and stability of perovskite solar cells often address one singular problem in a specific device configuration. In this work, we utilize a poly(ionic liquid) (PIL) to introduce a multi-functional interlayer to improve the device efficiency and stability for different perovskite compositions and architectures. The presence of the PIL at the perovskite surface reduces the non-radiative losses down to 60 meV already in the neat material, indicating effective surface trap passivation, thereby pushing the external photoluminescence quantum yield up to 7%. In devices, the PIL treatment induces a bi-functionality of the surface where insulating areas act as a blocking layer reducing interfacial charge recombination and increasing the VOC, whereas, at the same time, the passivated neighbouring regions provide more efficient charge extraction, increasing the FF. As a result, these solar cells exhibit outstanding VOC and FF values of 1.17 V and 83% respectively, with the best devices reaching conversion efficiencies up to 21.4%. The PIL-treated devices additionally show enhanced stability during maximum power point tracking (>700 h) and unchanged efficiencies after 10 months of shelf storage. By applying the PIL to small and wide bandgap perovskites, and to nip cells, we corroborate the generality of this methodology to improve the efficiency in various cell architectures and perovskite compositions. This journal is