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Formation pressure is an important indicator of field production potential. Currently, the common practice to estimate reservoir pressure is the hydrodynamic exploration test. This method requires shutting down the well, often for a long time. Such long shutdowns lead to less production from the reservoir and worsen the economics of the field. Here, we present the method for determining the pressure without shutting down the well by using statistical methods for such tasks. In this article, we describe the method of finding the formation pressure by using multidimensional multivariate analysis of the actual reservoir data from the Sukharev field. To build the model, several operational, geological, and reservoir properties at various stages of the field pressure were combined into a model to predict reservoir pressure. Results showed that with this simple statistical method, formation pressure varies in two distinctive stages. In the first stage, the formation pressure is influenced by the reservoir petrophysical parameters, whereas in the second stage, operational parameters were more prominent. Finally, three separate formations in the Sukharev field were examined to predict reservoir pressure, and the results were in very good agreement with the actual measured data. This confirmed that the method was practical and capable of predicting reservoir pressure at any time of the well's lifetime.

Abstract Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly investigated as resistive switching (RS) materials. Among different oxides, tin oxide (SnOx) received minimal attention, although it possesses excellent electronic properties. Herein, we demonstrate compliance-free, analog resistive switching behavior with several stable states in Ti/Pt/SnOx/Pt RRAM devices. The compliance-free nature might be due to the high internal resistance of SnOx films. The resistance of the films was modulated by varying Ar/O2 ratio during the sputtering process. The I–V characteristics revealed a well-expressed high resistance state (HRS) and low resistance states (LRS) with bipolar memristive switching mechanism. By varying the pulse amplitude and width, different resistance states have been achieved, indicating the analog switching characteristics of the device. Furthermore, the devices show excellent retention for eleven states over 1000 s with an endurance of > 100 cycles.

Abstract The aetiology of schizophrenia is multifactorial, and the identification of its risk factors are scarce and highly variable. A cross-sectional study was conducted to investigate the risk factors associated with schizophrenia among Malaysian sub-population. A total of 120 individuals diagnosed with schizophrenia (SZ) and 180 non-schizophrenic (NS) individuals participated in a questionnaire-based survey. Data of complete questionnaire responses obtained from 91 SZ and 120 NS participants were used in statistical analyses. Stool samples were obtained from the participants and screened for gut parasites and fungi using conventional polymerase chain reaction (PCR). The median age were 46 years (interquartile range (IQR) 37 to 60 years) and 35 years (IQR 24 to 47.75 years) for SZ and NS respectively. Multivariable binary logistic regression showed that the factors associated with increased risk of SZ were age, sex, unemployment, presence of other chronic ailment, smoking, and high dairy consumption per week. These factors, except sex, were positively associated with the severity of SZ. Breastfed at infancy as well as vitamin and supplement consumption showed a protective effect against SZ. After data clean-up, fungal or parasitic infections were found in 98% (39/42). of SZ participants and 6.1% (3/49) of NS participants. Our findings identified non-modifiable risk factors (age and sex) and modifiable lifestyle-related risk factors (unemployment, presence of other chronic ailment, smoking, and high dairy consumption per week) associated with SZ and implicate the need for medical attention in preventing fungal and parasitic infections in SZ.