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This paper presents a novel ultrasonic-assisted electrodeposition process of Mn-doped NiCo2O4 onto a commercial nickel foam in a neutral electroplating bath (pH = 7.0) under an ultrasonic power of 1.2 V and 100 W. Different sample properties were studied based on their crystallinity through X-ray diffraction (XRD), morphology was studied through scanning electron microscopy (SEM), and photodegradation was studied through ultraviolet–visible (UV–Vis) spectrophotometry. Based on the XRD results, the dominant crystallite phase obtained was shown to be a pure single NiCo2O4 phase. The optical properties of the photocatalytic film showed a range of energy band gaps between 1.72 and 1.73 eV from the absorption spectrum. The surface hydroxyl groups on the catalytic surface of the Mn-doped NiCo2O4 thin films showed significant improvements in removing methyl red via photodegradation, achieving 88% degradation in 60 min, which was approximately 1.6 times higher than that of pure NiCo2O4 thin films. The maximum hydrogen rate of the composite films under 100 mW/cm2 illumination was 38 μmol/cm2 with a +3.5 V external potential. The electrochemical performance test also showed a high capacity retention rate (96% after 5000 charge–discharge cycles), high capacity (260 Fg−1), and low intrinsic resistance (0.8 Ω). This work concludes that the Mn-doped NiCo2O4 hybrid with oxygen-poor conditions (oxygen vacancies) is a promising composite electrode candidate for methyl red removal, hydrogen evolution, and high-performance hybrid supercapacitor applications. [ABSTRACT FROM AUTHOR]

Perovskite quantum dots (QDs) have showed excellent optoelectronic properties to extend the application range of novel solid-state lighting, such as perovskite QD based LEDs (QD-LEDs). However, the traditional device structure of perovskite QD-LEDs employed PEDOT:PSS as a hole inject layer (HIL), which impairs stability due to acidic surface characteristics. This study proposes the sputtered NiO films as an HIL to replace acidic PEDOT:PSS. The NiO films with significantly different characteristics were prepared by controlling the sputtering parameters to investigate the devices' performance of NiO-based CsPbBr3 QD-LEDs. The optimized device showed an excellent performance with maxima luminescence of 20,118 cd/m2 and an external quantum efficiency (EQE) up to 3.63%. [ABSTRACT FROM AUTHOR]

The thermal stability of (Mg0.95Ni0.05)2TiO4 dielectric ceramics has been improved by mixing with CaTiO3 phases owing to higher positive temperature coefficients. The pure (Mg0.95Ni0.05)2TiO4 and the mixture phase systems of CaTiO3-modified (Mg0.95Ni0.05)2TiO4 were verified by XRD diffraction patterns to ensure the crystallite of different phases. The microstructures of the CaTiO3-modified (Mg0.95Ni0.05)2TiO4 were observed by SEM and EDS to investigate the relation between element ratios and grains. As a result, it can be seen that the thermal stability of the CaTiO3-modified (Mg0.95Ni0.05)2TiO4 can be effectively enhanced, compared with the pure (Mg0.95Ni0.05)2TiO4. Moreover, the radio frequency dielectric performances of CaTiO3-modified (Mg0.95Ni0.05)2TiO4 dielectric ceramics are strongly dependent upon the density and the morphology of the specimens. The champion sample with the ratio of (Mg0.95Ni0.05)2TiO4 and CaTiO3 of 0.92:0.08 showed an εr value of 19.2, an Qf value of 108,200 GHz, and a τf value of −4.8 ppm/°C, which may encourage (Mg0.95Ni0.05)2TiO4 ceramics to broaden the range of novel applications and match the requirements of 5G or next-generation communication systems. [ABSTRACT FROM AUTHOR]

The microstructure and dielectric properties of x[(Mg0.6Zn0.4)0.95Co0.05]2TiO4-(1 − x)Ca0.6La0.8/3TiO3 (x = 0.9-0.96) ceramics prepared via conventional solid-state method were investigated using scanning electron microscopy and a network analyzer. Mixed phases of [(Mg0.6Zn0.4)0.95Co0.05]2TiO4 and Ca0.6La0.8/3TiO3 were detected using X-ray diffraction. The microwave dielectric properties are strongly correlated with the sintering temperature. Temperature coefficient of resonant frequency could be controlled by amount of Ca0.6La0.8/3TiO3 and thus near-zero temperature coefficient value can be obtained. With x = 0.94 sintered at 1175 °C for 4 h, the proposed dielectric material, applicable to microwave devices, has the following dielectric properties: a dielectric constant ~ 18.1, a quality factor value of ~ 156,000 (at 9 GHz), and temperature coefficient of resonant frequency of 1.2 ppm/°C. [ABSTRACT FROM AUTHOR]

One option for low-cost white light-emitting diodes (LEDs) is the combination of a near-ultraviolet (UV) LED chip (382 nm) and a single phosphor. Such MnY(MoO) single phosphors have been fabricated by a simple solid-state reaction route and their emission color tuned by controlling the Mn doping amount. The chromaticity coordinates of the white light emitted by the UV GaN LED with the MnY(MoO) phosphor were x = 0.5204 and y = 0.4050 [correlated color temperature (CCT) = 7958 K]. [ABSTRACT FROM AUTHOR]

Hybrid organic−inorganic and all-inorganic metal halide perovskite nanoparticles (PNPs) have shown their excellent characteristics for optoelectronic applications. We report an atmospheric process to embed formamidinium CH(NH2)2PbI3 (FAPbI3) PNPs in silica protective layer at room temperature (approximately 26 °C) employing (3-aminopropyl) triethoxysilane (APTES). The resulting perovskite nanocomposite (PNCs) achieved a high photoluminescence (PL) quantum yield of 58.0% and good stability under atmospheric moisture conditions. Moreover, the PNCs showed high PL intensity over 1 month of storage (approximately 26 °C) and more than 380 min of PNCs solutions in DI water. The studied near-infrared (NIR) light-emitting diode (LED) combined a NIR-emitting PNCs coating and a blue InGaN-based chip that exhibited a 788 nm electroluminescence spectrum of NIR-LEDs under 2.6 V. This may be a powerful tool to track of muscle and disabled patients in the detection of a blood vessel. [ABSTRACT FROM AUTHOR]

In this study, the performances of red CsPbI3-based all-inorganic perovskite quantum-dot light-emitting diodes (IPQLEDs) employing polymeric crystalline Poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(9-vinycarbazole) (PVK), Poly(N,N′-bis-4-butylphenyl-N,N′-bisphenyl)benzidine (Poly-TPD) and 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) as the hole transporting layers (HTLs) have been demonstrated. The purpose of this work is an attempt to promote the development of device structures and hole transporting materials for the CsPbI3-based IPQLEDs via a comparative study of different HTLs. A full-coverage quantum dot (QD) film without the aggregation can be obtained by coating it with VB-FNPD, and thus, the best external quantum efficiency (EQE) of 7.28% was achieved in the VB-FNPD device. We also reported a standing method to further improve the degree of VB-FNPD polymerization, resulting in the improved device performance, with the EQE of 8.64%. [ABSTRACT FROM AUTHOR]

This work presents a method for obtaining a color-converted red light source through a combination of a blue GaN light-emitting diode and a red fluorescent color conversion film of a perovskite CsPbI3/TOPO composite. High-quality CsPbI3 quantum dots (QDs) were prepared using the hot-injection method. The colloidal QD solutions were mixed with different ratios of trioctylphosphine oxide (TOPO) to form nanowires. The color conversion films prepared by the mixed ultraviolet resin and colloidal solutions were coated on blue LEDs. The optical and electrical properties of the devices were measured and analyzed at an injection current of 50 mA; it was observed that the strongest red light intensity was 93.1 cd/m2 and the external quantum efficiency was 5.7% at a wavelength of approximately 708 nm when CsPbI3/TOPO was 1:0.35. [ABSTRACT FROM AUTHOR]

High-quality perovskite CsPbBr3 quantum dots (QDs-CsPbBr3) were prepared using the ultrasonic oscillation method, which is simple and provides variable yield according to requirements. The emission spectra over a large portion of the visible spectral region (450–650 nm) of QD-CsPbX3 (X = Cl, Br, and I) have tunable compositions that can be halide exchanged using the halide anion exchange technique and quantum size-effects. A strong peak with high intensity of (200) lattice plane of purified QDs-CsPbBr3 film is obtained, confirming the formation of an orthorhombic perovskite crystal structure of the Pnma space group. The photoluminescence of QDs-CsPbBr3 was characterized using a narrow line-width emission of 20 nm, with high quantum yields of up to 99.2%, and radioactive lifetime increasing to 26 ns. Finally, through the excellent advantages of QDs-CsPbBr3 mentioned above, purified perovskite QDs-CsPbBr3 as an active layer was utilized in perovskite quantum dot light-emitting diodes structure applications. As a result, the perovskite QDs-CsPbBr3 light-emitting diodes (LEDs) exhibits a turn-on voltage of 7 V and a maximum luminance of 5.1 cd/m2. [ABSTRACT FROM AUTHOR]

The poor stability of CsPbX3 quantum dots (QDs-CsPbX3) under wet conditions is still considered to be a key issue. In order to overcome this problem, this study presents a high molecular weight polymer matrix (polymethylmethacrylate, PMMA) incorporated into the QDs-CsPbBr3 to improve its stability and maintain its excellent optical properties. In this study, the Cs2CO3, PbO, Tetrabutylammonium Bromide (TOAB) powder, oleic acid, and toluene solvent were uniformly mixed and purified to prepare high-quality QDs powders. Then, hexane was used as a dispersing agent for the QD powder to complete the perovskite QDs-CsPbBr3 solution. Finally, a solution with different proportions of quantum dots CsPbBr3 and PMMA was prepared and discussed. In the preparation of thin films, firstly, a thin film with the structure of glass/QD-CsPbBr3/PMMA was fabricated in a glove box using a well-developed QDs-CsPbBr3 solution by changing the ratio of CsPbBr3:PMMA. The material analysis of QDs-CsPbBr3 thin films was performed with photoluminescence (PL), transmittance, absorbance, and transmission electron microscopy (TEM). The structures and morphologies were further examined to study the effect of doped PMMA on perovskite QDs-CsPbBr3. [ABSTRACT FROM AUTHOR]

In this study, the perovskite layers were prepared by two-step wet process with different CH3NH3I (MAI) concentrations. The cell structure was glass/FTO/TiO2-mesoporous/CH3NH3PbI3 (MAPbI3)/spiro-OMeTAD/Ag. The MAPbI3 perovskite films were prepared using high and low MAI concentrations in a two-step process. The perovskite films were optimized at different spin coating speed and different annealing temperatures to enhance the power conversion efficiency (PCE) of perovskite solar cells. The PCE of the resulting device based on the different perovskite morphologies was discussed. The PCE of the best cell was up to 17.42%, open circuit voltage of 0.97 V, short current density of 24.06 mA/cm2, and fill factor of 0.747. [ABSTRACT FROM AUTHOR]

In this paper, a thermally crosslinkable 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) film served as the hole transporting layer (HTL) of perovskite CsPbBr 3 quantum-dot light-emitting diodes (QD-LEDs) was investigated and reported. The VB-FNPD film crosslinked at various temperatures in the range of 100~230 °C followed by a spin-coating process to improve their chemical bonds in an attempt to resist the erosion from the organic solvent in the remaining fabrication process. It is shown that the device with VB-FNPD HTL crosslinking at 170 °C has the highest luminance of 7702 cd/m 2 , the maximum current density (J) of 41.98 mA/cm 2 , the maximum current efficiency (CE) of 5.45 Cd/A, and the maximum external quantum efficiency (EQE) of 1.64%. Our results confirm that the proposed thermally crosslinkable VB-FNPD is a candidate for the HTL of QD-LEDs.

In this work, a MAPbBr₃ quantum dot (QD-MAPbBr₃) layer was prepared by a simple and rapid method. Octylammonium bromide (OABr) gives the MAPbBr₃ better exciton binding energy, good surface morphology, and stability. To form a nanocrystalline thin film on indium tin oxide (ITO) glass, the QD-MAPbBr₃ film was coated by a spin-coating method in a nitrogen-filled glove box and the NiO x film was used as an adhesive layer and hole transport layer. The highest transmittance of MAPbBr₃ on NiO x /ITO glass was around 75% at 700 nm. This study also reported a high transparent and perovskite bulk-free ITO/NiO x /QD-MAPbBr₃/C 60 /Ag solar cell where the NiO x , QD-MAPbBr₃, and C 60 were used as a hole transport layer, active layer, and electron transport layer, respectively.

Dimethylformamide/dimethyl sulfoxide solvent mixtures were used as the CH₃NH₃PbI₃ (MAPbI₃) precursor solvent in a one-step spin coating method to fabricate smooth and hydrophilic crystalline MAPbI₃ thin films on top of hydrophobic carbon-60 (C 60 ) thin film for highly efficient photovoltaics. The structural, optical, and excitonic characteristics of the resultant MAPbI₃ thin films were analyzed using X-ray diffraction (XRD), atomic-force microscopy, absorbance spectroscopy, photoluminescence (PL) spectrometry, and nanosecond time-resolved PL. There was a trade-off between the crystallinity and surface roughness of the MAPbI₃ thin films, which strongly influenced the device performance of MAPbI₃-based photovoltaics. The high power conversion efficiency ( PCE ) of 17.55% was achieved by improving the wettability of MAPbI₃ precursor solutions on top of the C 60 thin films. In addition, it was predicted that the fill factor and PCE could be further improved by increasing the crystallinity of the MAPbI₃ thin film while keeping it smooth., Competing Interests: The authors declare no conflict of interest.