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We investigate the cosmological implications of entropy-based approaches in the context of Holographic Dark Energy (HDE) and Gravity-Thermodynamics (GT) formalisms. We utilise the extended Barrow entropy form, with the index parameter $\Delta$, representing the fractal dimension of the horizon. We also test implementing different parameter ranges for $\Delta$, which can be extended to Tsallis' interpretation within the same formal cosmology. We perform a Bayesian analysis to constrain the cosmological parameters using the Pantheon+, more recent DESy5, DESI, and, as a supplement, Quasar datasets. We find that the HDE model within almost all data combinations performs extremely well in comparison to the GT approach, which is usually strongly disfavored. Using the combination of DESy5+DESI alone, we find that the GT approaches are disfavored at $|\log \mathcal{B}| \sim 5.8$ and $|\log \mathcal{B}| \sim 6.2$ for the Barrow and Tsallis limits on $\Delta$, respectively, wrt $\Lambda$CDM model. While the HDE approach is statistically equivalent to $\Lambda$CDM when comparing the Bayesian evidence. We also investigate the evolution of the dark energy equation of state and place limits on the same, consistent with quintessence-like behaviour in the HDE approaches., Comment: 15 pages, 5 figures, comments are welcome

In this paper, we introduced $\alpha$-Hurewicz $\&$ $\theta$-Hurewicz properties in a topological space $X$ and investigated their relationship with other selective covering properties. We have shown that for an extremally disconnected semi-regular spaces, the properties: Hurewicz, semi-Hurewicz, $\alpha$-Hurewicz, $\theta$-Hurewicz, almost-Hurewicz, nearly Hurewicz and midly Hurewicz are equivalent. We have also proved that for an extremally disconnected space X, every finite power of X has $\theta$-Hurewicz property if and only if X has the selection principle $U_{fin}(\theta$-$\Omega, \theta$-$\Omega)$. The preservation under several types of mappings of $\alpha$-Hurewicz and $\theta$-Hurewicz properties are also discussed. Also, we showed that, if $X$ is a mildly Hurewicz subspace of $ \omega^\omega$, than $X$ is bounded.

We present the investigations on atomic dynamics and Li+ diffusion in crystalline and amorphous Li2Si2O5 using quasielastic (QENS) and inelastic neutron scattering (INS) studies supplemented by ab-initio molecular dynamics simulations (AIMD). The QENS measurements in the amorphous phase of Li2Si2O5 show a narrow temperature window (700 < T < 775 K), exhibiting significant quasielastic broadening corresponding to the fast Li+ diffusion and relaxation of SiO4 units to the crystalline phase. Our INS measurements clearly show the presence of large phonon density of states (PDOS) at low energy (low-E) in the superionic amorphous phase, which disappear in the non-superionic crystalline phase, corroborating the role of low-E modes in Li+ diffusion. The frustrated energy landscape and host flexibility (due to random orientation and vibrational motion of SiO4 polyhedral units) play an essential role in diffusing the Li+. We used AIMD simulations to identify that these low-E modes involve a large amplitude of Li vibrations coupled with SiO4 vibrations in the amorphous phase. At elevated temperatures, these vibrational dynamics accelerate the Li+ diffusion via a paddle-wheel like coupling mechanism. Above 775 K, these SiO4 vibrational dynamics drive the system into the crystalline phase by locking SiO4 and Li+ into deeper minima of the free energy landscape and disappear in the crystalline phase. Both experiments and simulations provide valuable information about the atomic level stochastic and vibrational dynamics in Li2Si2O5 and their role in Li+ diffusion and vitrification., Comment: 31 pages, 7 Figures, Supplementary Materials

We have performed quasielastic and inelastic neutron scattering (QENS and INS) measurements from 300 K to 1173 K to investigate the Na-diffusion and underlying host dynamics in Na2Ti3O7. The QENS data show that the Na atoms undergo localized jumps up to 1173 K. The ab-initio molecular dynamics (AIMD) simulations supplement the measurements and show 1-d long-ranged diffusion along the a-axis above 1500 K. The simulations indicate that the occupancy of the interstitial site is critical for long-range diffusion. The nudged-elastic-band (NEB) calculation confirmed that the activation energy barrier is lowest for diffusion along the a-axis. In the experimental phonon spectra the peaks at 10 and 14 meV are dominated by Na dynamics that disappear on warming, suggesting low-energy phonons significantly contribute to large Na vibrational amplitude at elevated temperatures that enhances the Na hopping probability. We have also calculated the mode Gr\"uneisen parameters of the phonons and thereby calculated the volume thermal expansion coefficient, which is found to be in excellent agreement with available experimental data., Comment: 22 Pages, 10 Figures

We have performed quasielastic neutron scattering (QENS) experiments up to 1243 K and ab-initio molecular dynamics (AIMD) simulations to investigate the Na diffusion in various phases of NaAlSiO4 (NASO), namely, low-carnegieite (L-NASO; trigonal), high-carnegieite (H-NASO; cubic) and nepheline (N-NASO; hexagonal) phases. The QENS measurements reveal Na ions localized diffusion behavior in L-NASO and N-NASO, but long-range diffusion behavior in H-NASO. The AIMD simulation supplemented the QENS measurements and showed that excess Na ions in H-NASO enhance the host network flexibility and activate the AlO4/SiO4 tetrahedra rotational modes. These framework modes enable the long-range diffusion of Na across a pathway of interstitial sites. The simulations also show Na diffusion in Na-deficient N-NASO through vacant Na sites along the hexagonal c-axis., Comment: 14 Pages, 5 Figures

We report on investigations of phonons and lithium diffusion in LiAlO$_2$ based on inelastic neutron scattering (INS) measurements of the phonon density of states (DOS) in {\gamma}-LiAlO$_2$ from 473 K to 1073 K, complemented with ab-initio molecular dynamics (AIMD) simulations. We find that phonon modes related to Li vibrations broaden on warming as reflected in the measured phonon DOS and reproduced in simulations. Further, the AIMD simulations probe the nature of lithium diffusion in the perfect crystalline phase ({\gamma}-LiAlO$_2$), as well as in a structure with lithium vacancies and a related amorphous phase. Almost liquid-like super-ionic diffusion is observed in AIMD simulations of the three structures at high temperatures; with predicted onset temperatures of 1800 K, 1200 K, and 600 K in the perfect structure, vacancy structure and the amorphous phase, respectively. In the ideal structure, the Li atoms show correlated jumps; while simple and correlated jumps are both seen in the vacancy structure, and a mix of jumps and continuous diffusion occur in the amorphous structure. Further, we find that the Li-diffusion is favored in all cases by a large librational amplitude of the neighbouring AlO4 tetrahedra, and that the amorphous structure opens additional diffusion pathways due to a broad distribution of AlO4 tetrahedra orientations., Comment: 31 Pages, 14 figures

In this paper, we continue to investigate topological properties of $\mathcal{I}H$ and its two star versions namely $SS \mathcal{I} H$ and $S \mathcal{I} H$. We characterized $\mathcal{I}$-Hurewicz property by $\mathcal{I}$-Hurewicz Basis property and $\mathcal{I}$-Hurewicz measure zero property for metrizable spaces. We also characterized $\mathcal{I}$-Hurewicz property, star-$\mathcal{I}$-Hurewicz property and strongly star-$\mathcal{I}$-Hurewicz property using selection principles.

We have investigated the dynamics of Na ions in amorphous Na2Si2O5, a potential solid electrolyte material for Na-battery. We have employed quasielastic neutron scattering (QENS) technique in the amorphous Na2Si2O5 from 300 to 748 K to understand the diffusion pathways and relaxation timescales of Na atom dynamics. The microscopic analysis of the QENS data has been performed using ab-initio and classical molecular dynamics simulations (MD) to understand the Na-ion diffusion in the amorphous phase. Our experimental studies show that the traditional model, such as the Hall and Ross (H-R) model, fairly well describe the diffusion in the amorphous phase giving a mean jump length of ~3 {\AA} and residence time about 9.1 picoseconds. Our MD simulations have indicated that the diffusion of Na+ ions occurs in the amorphous phase of Na2Si2O5 while that is not observed in the crystalline orthorhombic phase even up to 1100 K. The MD simulations have revealed that in the amorphous phase, due to different orientations of silicon polyhedral units, accessible pathways are opened up for Na+ diffusions. These pathways are not available in the crystalline phase of Na2Si2O5 due to rigid spatial arrangement of silicon polyhedral units., Comment: 24 Pages, 12 figures

The density functional theory with generalized gradient approximation has been used to investigate the electronic structure of gadolinium pyrochlore A2Zr2O7 (A=Gd, Nd) ceramic synthesized in polycrystalline form by solid state reaction. Structural characterization of the compound was done through X-ray diffraction (XRD) followed by Rietveld analysis of the XRD pattern. The Zr-K edge X-ray absorption (XAFS) spectra of A2Zr2O7 (A=Gd, Nd) were analysed together with those Zr-foil, which was used as reference compounds. X-ray photoemission spectroscopy (XPS), X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) for A2Zr2O7 (A=Gd, Nd) has been employed to obtain quantitative structural information on the Zr-local environment. The band gap is estimated using UV-Vis spectroscopy. The crystal structure is face centered cubic, space group being Fd-3m (No. 227). The total energies in this work were calculated using the generalized gradient approximation to DFT plus on-site repulsion (U) method., Comment: 4 figures, 2 table

Yttria stabilized Zirconia (YSZ) pellets with different crystallite sizes were irradiated with 80 MeV Ag$^{6+}$ ions at room temperature and 1000 K to understand the role of crystallite size/material microstructure and irradiation temperature on the radiation tolerance against high electronic energy loss (S$_e$). X-ray diffraction and Raman spectroscopy measurements reveal that, irrespective of the irradiation temperature, the nano-crystalline samples suffered more damage as compared to the bulk-like sample. A reduction in the irradiation damage i.e. improvement in the radiation tolerance, was observed for all the samples irradiated at 1000 K. The reduction in the damage, however, was remarkably higher for the two nano-crystalline samples compared to the bulk-like sample, and hence the difference in the damage between the bulk-like and nano-crystalline samples was also significantly lower at 1000 K than that at room temperature. The irradiation damage, against S$_e$, was thus found to be critically dependent on the interplay between the irradiation temperature and crystallite size. These results are explained with the help of detailed theoretical calculations/simulations based on the 'in-elastic thermal spike' model by taking into consideration the combined effect of crystallite size and environmental (irradiation) temperature on the electron-phonon coupling factor and lattice thermal conductivity (and hence on the resulting thermal spike). Our results are crucial from the fundamental perspective of comprehending the size and temperature dependent radiation damage against S$_e$ ; and also for a number of applications, in various radiation environments, where nano-materials are being envisioned for use., Comment: This version has been communicated (for publication)

The effects of high pressure on the crystal structure of orthorhombic (Pnma) perovskite type cerium scandate have been studied in situ under high pressure by means of synchrotron x-ray powder diffraction, using a diamond anvil cell. We have found that the perovskite type crystal structure remains stable up to 40 GPa, the highest pressure reached in the experiments. The evolution of unit-cell parameters with pressure has indicated an anisotropic compression. The room-temperature pressure-volume equation of state is obtained from the experiments. From the evolution of microscopic structural parameters like bond distances and coordination polyhedra of cerium and scandium, the macroscopic behavior of CeScO3 under compression has been explained and reasoned for its large pressure stability. The reported results are discussed in comparison with high-pressure results from other perovskites., Comment: 39 pages, 1 table, 9 figures

Nanographitic structures (NGSs) with multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance - plasma enhanced chemical vapor deposition (ECR-PECVD). CH4 is used as source gas with Ar and H2 as dilutants. Field emission scanning electron microscopy, high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy are used to study the structural and morphological features of the grown films. Herein, we demonstrate, how the morphology can be tuned from planar to vertical structure using single control parameter namely, dilution of CH4 with Ar and/or H2. Our results show that the competitive growth and etching processes dictate the morphology of the NGSs. While Ar-rich composition favors vertically oriented graphene nanosheets, H2-rich composition aids growth of planar films. Raman analysis reveals dilution of CH4 with either Ar or H2 or in combination helps to improve the structural quality of the films. Line shape analysis of Raman 2D band shows nearly symmetric Lorentzian profile which confirms the turbostratic nature of the grown NGSs. Further, this aspect is elucidated by HRTEM studies by observing elliptical diffraction pattern. Based on these experiments, a comprehensive understanding is obtained on the growth and structural properties of NGSs grown over a wide range of feedstock compositions., Comment: 19 pages, 8 figures, 1 table

Diamond-like carbon (DLC) films are synthesized on Si using plasma enhanced chemical vapor deposition. The role of substrate bias and nitrogen doping on the structural evolution and local elastic modulus of DLC films are systematically investigated. Raman spectroscopic studies reveal that the amount of graphitic C=C sp2 bonding increases with substrate bias and nitrogen doping. The density and hydrogen concentration in the films are found to vary from 0.7 to 2.2 g/cm3 and 16 to 38 atomic %, respectively, depending upon the substrate bias and nitrogen concentration in the DLC films. Atomic force acoustic microscopic (AFAM) analysis shows a direct correlation between local elastic modulus and structural properties estimated by Raman spectroscopy, Rutherford back scattering and elastic recoil detection analysis. AFAM analysis further confirms the evolution of soft second phases at high substrate biases (> -150V) in undoped DLC films. Further, N doping leads to formation of such soft second phases in DLC films even at lower substrate bias of -100 V. The AFAM studies provide a direct microscopic evidence for the "sub-implantation growth model" which predicts the formation of graphitic second phases in DLC matrix at high substrate biases., Comment: Accepted in J. Phys. D Appl. Phys

In this article, we report negative thermal expansion and spin frustration in hexagonal GdInO$_{3}$. Rietveld refinement of the XRD patterns reveal that the negative thermal expansion in the temperature range of 50-100K stems from the triangular lattice of Gd$^{3+}$ ions. At low temperature, the downward deviation of the inverse susceptibility ($\chi^{-1}$) vs. $T$ plot from the Curie-Weiss law indicates spin frustration which inhibits long-range magnetic ordering down to 2K. Magnetostriction measurements clearly demonstrate a strong spin-lattice coupling. Low temperature anomalous phonon softening, as obtained from temperature dependent Raman measurements, also reveals the same. Our experimental observations are supported by first principles density functional theory calculations of the electronic and phonon dispersion of GdInO$_3$. The calculations suggest that the GdInO$_3$ lattice is highly frustrated at low temperature. Further, the calculated normal mode frequencies of the Gd related $\Gamma$ point phonons are found to depend on the magnetic structure of the lattice, suggesting significant magneto-elastic coupling., Comment: 16 pages, 10 figures

Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) has been investigated using Raman and X-ray photoelectron spectroscopy. While Raman spectra reveal the dominance of vacancy and boundary type defects respectively in vertical and planar NGSs, XPS provides additional information on vacancy related defect peaks at C 1s spectrum that originate from non-conjugated carbon atoms in hexagonal lattice. Although an excellent correlation prevails between these two techniques, our results show that estimation of surface defects by XPS is more accurate than Raman analysis. Nuances of these techniques are discussed in the context of assessing defects in nanographitic structures., Comment: 21 pages, 5 figures, 2 tables

The Fourier-discrete-peridogram are used to identify pulsation modes in variables. We have found two pulsation modes in V1 and V2 among 13 new variables as described by Abbas et al.. The five variables V9 to V13 are not shown close to periodic values by analysis of the frequency distribution of multi-band data and also create difficulty to describe their varied nature. The multi-band periodic values of V1 and V6 are matched with known literature values. The scattering of the varied nature of secondary pulsation modes is eliminated by moving average methodology. The phase curve of secondary mode is found to be more smooth compared to a prominent mode of pulsation., Comment: 4 pages, 4 figures, conference journal in International Journal of Applied Engineering Research, ISSN 0973-4562 Vol. 10 No.94 (2015)

Metal oxide nanostructures are widely used in energy applications like super capacitors and Li-on battery. Smaller size nanocrystals show better stability, low ion diffusion time, higher-ion flux and low pulverization than bigger size nanocrystals during electrochemical operation. Studying the distinct properties of smaller size nanocrystals such as quantum dots (QDs) can improve the understanding on reasons behind the better performance and it will also help in using QDs or smaller size nanoparticles (NPs) more efficiently in different applications. Aqua stable pure SnO2 QDs with compositional stability and high surface to volume ratio are studied as an electrochemical super capacitor material and compared with bigger size NPs of size 25 nm. Electron energy-loss spectroscopic study of the QDs revealed dominant role of surface over the bulk. Temperature dependent study of low frequency Raman mode and defect Raman mode of QDs indicated no apparent volume change in the SnO2 QDs within the temperature range of 80-300 K. The specific capacitance of these high surface area and stable SnO2 QDs has showed only 9% loss while increasing the scan rate from 20 mV/S to 500 mV/S. Capacitance loss for the QDs is less than 2% after 1000 cycles of charging discharging, whereas for the 25 nm SnO2 NPs, the capacitance loss is 8% after 1000 cycles. Availability of excess open volume in QDs leading to no change in volume during the electro-chemical operation and good aqua stability is attributed to the better performance of QDs over bigger sized NPs., Comment: 31 pages, 9 figures, Journal

The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A1 symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however is reported only in the O rich single nanowires with the asymmetric A1(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires., Comment: 12 pages, 3 figures, Journal

The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH4) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2(ON) and VGa-3ON defect complexes. A global resistive response for sensor devices of ensemble nanowires and a localized charge transfer process in single GaN nanowires are studied in situ scanning by Kelvin probe microscopy (SKPM). A localized charge transfer process, involving the VGa-3ON defect complex on nanowire surface is attributed in controlling the global gas sensing behavior of the oxygen rich ensemble GaN nanowires., Comment: 42 pages, 6 figures, Journal

The electrical and photodiode characteristics of ensemble and single p-GaN nanowire and n-Si heterojunction devices were studied. Ideality factor of the single nanowire p-GaN/n-Si device was found to be about three times lower compared to that of the ensemble nanowire device. Apart from the deep-level traps in p-GaN nanowires, defect states due to inhomogeneity in Mg dopants in the ensemble nanowire device are attributed to the origin of high ideality factor. Photovoltaic mode of ensemble nanowire device showed an improvement in the fill-factors up to 60 percent over the single nanowire device with fill-factors up to 30 percent. Reponsivity of the single nanowire device in photoconducting mode was found to be enhanced by five orders, at 470 nm. The enhanced photoresponse of the single nanowire device also confirms the photoconduction due to defect states in p-GaN nanowires., Comment: 24 pages, 6 figures,Journal

We report the observation of carrier mediated decrease in the stiffness of crystalline (c)-Si(100) under nanoindentation. The apparent elastic modulii of heavily dopes (1E21 cm-3) p- and n-type c-Si are observed to be lower by 5.-7.5 percent that the estimated value for intrinsic (1E14 cm-3) c-Si. The deviation observed with respect to elastic modulus remarkably matches with the estimated value while considering the electronic elastic strain effect on carrier concentration as an influence of negative pressure coefficient of band gap for Si. The value is predominantly higher than the reported value of a decrease of 1-3 percent in stiffness as an effect of impurity in c-Si., Comment: 13 pages, 3 figures, Journal

The statistical analysis of gathered of astronomical objects (such as open cluster) are excellent tools to compute its parameters and to constrain the theory of its evolution. Here, we are represented detailed structural and membership analysis of an open cluster NGC 1960 through various statistical formulas and approaches. King empirical methods provide the information about the cluster extent as 5.2 +/- 0.4 pc. The exact identification of members of cluster is needed to precise estimation of its age, reddening, metallicity etc., therefore, to identify most probable members (MPMs), we adopted the combined approach of various statistical methods (kinematic, photometric and statistical) and 712 members are satisfied needed criteria of MPMs. The basic physical parameters of the cluster such as E(B-V)=0.23+/-0.02 mag, E(V-K)=1.05+/-0.03mag, log(Age)=7.35+/-0.05, and (m-M)=11.35+/-0.10 mag are obtained using the color-color and color-magnitude diagrams. NGC 1960 is found to be located at a distance of 1.34 +/- 0.03 kpc. Using the archival proper motion catalogues, we estimate mean proper motions of NGC 1960 as 0.83+/-0.26 mas yr-1 and -6.55+/-0.23 mas yr-1 in the direction of RA and DEC, respectively., Comment: 7pages, 7figures in Mathematical sciences International research Journal, 2015, 4

The compression behavior of zircon-type samarium orthovanadate, SmVO4, has been investigated using synchrotron-based powder x-ray diffraction and ab-initio calculations up to 21 GPa. The results indicate the instability of ambient zircon phase at around 6 GPa, which transforms to a high-density scheelite-type phase. The high-pressure phase remains stable up to 21 GPa, the highest pressure reached in the present investigations. On pressure release, the scheelite phase is recovered. Crystal structure of high-pressure phase and equations of state (EOS) for the zircon- and scheelite-type phases have been determined. Various compressibilities such as bulk, axial and bond, estimated from the experimental data are found to be in good agreement with the results obtained from theoretical calculations. Calculated elastic constants show that the zircon structure becomes mechanically unstable beyond the transition pressure. Overall there is good agreement between experimental and theoretical findings., Comment: 13 pages, 12 figures, 3 tables

The radial density profile (RDP) of cluster DOLIDZE 14 provides the radius of 9.8 arcmin, it is based on consideration of first plateau region of RDP. This value is less than the radius which comes through consideration of the second plateau region. The stars, which are inside of the cluster radius, are used to estimate the distance-modulus and E(I-R) by fitting theoretical isochrone on the colour-magnitude diagram (CMD). The best fitted stellar isochrone of solar matellacity provides these values as 11.15 mag and 0.25 mag, respectively. These results are used to estimate the mass-function slope of the cluster, which comes to be different that of Salpeter-Value. The enhancement of brighter stars does not found within the cluster region which indicates its old age. The Mass-Segregation phenomena of cluster is found between massive and lighter stars but not found in fainter stars, having magnitude greater than 15 mag in I-band. The relaxation-time is very little in the comparison of its age. The mean proper motion of cluster's radial zones is found to be high in the comparison of field region (12.77-15.18 arcmin). This is indicative of weak-gravitational bond among the stars of the cluster., Comment: conference. PCME-2015 (ISBN: 978-81-930585-8-9)

We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different substrate temperatures. The temperature of the substrate was varied as room temperature (RT), 100oC and 500oC. The binding energy of Al-2p, N-1s and O-1s core electrons indicate the formation of 2H polytypoid of AlN. The increase in concentration of AlN with substrate temperature during deposition is elucidated through detailed analysis with calculated elemental atomic concentrations (at. %) of all possible phases at the film surface. Our results show that predominate formation of AlN as high as 74 at. % is achievable using substrate temperature as the only process parameter. This high fraction of AlN in thin film surface composition is remarkable when compared to other growth techniques. Also, the formation of other phases is established based on their elemental concentrations., Comment: 13 pages, 6 figures, 2 tables, submitted to the journal "Thin Solid Films"

Methane (CH_4) gas sensing properties of novel vanadium dioxide (VO_2) nanostructured films is reported for the first time. The single phase nanostructures are synthesized by pulsed dc-magnetron sputtering of V target followed by oxidation in O_2 atmosphere at 550 ^oC. The partial pressure of O_2 is controlled to obtain stoichiometric VO_2 with the samples showing rutile monoclinic crystalline symmetry and regions of rod shaped nano-architectures. These nanostructured films exhibit a reversible semiconductor to metal transition in the temperature range of 60-70 ^oC. Gas sensing experiments are carried out in the temperature span from 25 ^oC to 200 ^oC in presence of CH_4. These experiments reveal that the films respond very well at temperatures as low as 50 ^oC, in the semiconducting state., Comment: 18 pages, 4 figures, journal

Growth of mono-dispersed AlGaN nanowires of ternary wurtzite phase is reported using chemical vapour deposition technique in the vapour-liquid-solid process. The role of distribution of Au catalyst nanoparticles on the size and the shape of AlGaN nanowires are discussed. These variations in the morphology of the nanowires are understood invoking Ostwald ripening of Au catalyst nanoparticles at high temperature followed by the effect of single and multi-prong growth mechanism. Energy-filtered transmission electron microscopy is used as an evidence for the presence of Al in the as-prepared samples. A significant blue shift of the band gap, in the absence of quantum confinement effect in the nanowires with diameter about 100 nm, is used as a supportive evidence for the AlGaN alloy formation. Polarized resonance Raman spectroscopy with strong electron-phonon coupling along with optical confinement due to the dielectric contrast of nanowire with respect to that of surrounding media are adopted to understand the crystalline orientation of a single nanowire in the sub-diffraction limit of about 100 nm using 325 nm wavelength, for the first time. The results are compared with the structural analysis using high resolution transmission microscopic study., Comment: 33 pages, 7 figures, journal