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Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat interfaces with graphene and at the same time contain small densities of traps to maintain high device stability. Previously used amorphous oxides, such as SiO2 and Al2O3, however, typically suffer from oxide dangling bonds at the interface, high surface roughness and numerous border oxide traps. In order to address these challenges, here we use 2 nm thick epitaxial CaF2 as a gate insulator in GFETs. By analyzing device-to-device variability for about 200 devices fabricated in two batches, we find that tens of them show similar gate transfer characteristics. Our statistical analysis of the hysteresis up to 175oC has revealed that while an ambient-sensitive counterclockwise hysteresis can be present in some devices, the dominant mechanism is thermally activated charge trapping by border defects in CaF2 which results in the conventional clockwise hysteresis. We demonstrate that both the hysteresis and bias-temperature instabilities in our GFETs with CaF2 are comparable to similar devices with SiO2 and Al2O3. In particular, we achieve a small hysteresis below 0.01 V for equivalent oxide thickness (EOT) of about 1 nm at the electric fields up to 15 MV cm−1 and sweep times in the kilosecond range. Thus, our results demonstrate that crystalline CaF2 is a promising insulator for highly-stable GFETs. [ABSTRACT FROM AUTHOR]

SiGe quantum-well pMOSFETs have recently been introduced for enhanced performance of transistors. Quite surprisingly, a significant reduction in negative bias temperature instability (NBTI) was also found in these devices. Furthermore, a stronger oxide field acceleration of the degradation in SiGe devices compared with Si devices was reported. These observations were speculated to be a consequence of the energetical realignment of the SiGe channel with respect to the dielectric stack. As these observations were made on large-area devices, only the average contribution of many defects to NBTI could be studied. In order to reveal the microscopic reasons responsible for the improved reliability, a detailed study of single defects is performed in nanoscale devices. To provide a detailed picture of single charge trapping, the step-height distributions for different device variants are measured and found to follow a unimodal and bimodal distribution. This finding suggests two conducting channels, one in the SiGe and one in the thin Si cap layer. We, furthermore, demonstrate that similar trap depth distributions are present among the device variants supported by a similar stress bias dependence of the capture times of the identified single defects. We conclude that NBTI is primarily determined by the dielectric stack and not by the device technology. [ABSTRACT FROM AUTHOR]

Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices is still unclear. Most prominently, the Si dangling bond or K -center has been identified as an amphoteric trap center. Nevertheless, experiments have shown that these dangling bonds only make up a small portion of the total density of electrical active defects, motivating the search for other charge trapping sites. Here, we use a machine-learned force field to create model structures of amorphous Si3N4 by simulating a melt-and-quench procedure with a molecular dynamics algorithm. Subsequently, we employ density functional theory in conjunction with a hybrid functional to investigate the structural properties and electronic states of our model structures. We show that electrons and holes can localize near over- and under-coordinated atoms, thereby introducing defect states in the band gap after structural relaxation. We analyze these trapping sites within a nonradiative multi-phonon model by calculating relaxation energies and thermodynamic charge transition levels. The resulting defect parameters are used to model the potential energy curves of the defect systems in different charge states and to extract the classical energy barrier for charge transfer. The high energy barriers for charge emission compared to the vanishing barriers for charge capture at the defect sites show that intrinsic electron traps can contribute to the memory effect in charge trap flash devices.

To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a drift of the device threshold voltage over time. With ongoing miniaturization of the transistors towards a few tens of nanometer small devices the drift of the threshold voltage is observed to proceed in discrete steps. Quite interestingly, each of these steps correspond to charge capture or charge emission event of a certain defect in the atomic structure of the device. This observation paves the way for studying device reliability issues like BTI at the single-defect level. By considering single-defects the physical mechanism of charge trapping can be investigated very detailed. An in-depth understanding of the intricate charge trapping kinetics of the defects is essential for modeling of the device behavior and also for accurate estimation of the device lifetime amongst others. In this article the recent advancements in characterization, analysis and modeling of single-defects are reviewed.

Miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is typically beneficial for their operating characteristics, such as switching speed and power consumption, but at the same time miniaturization also leads to increased variability among nominally identical devices. Adverse effects due to oxide traps in particular become a serious issue for device performance and reliability. While the average number of defects per device is lower for scaled devices, the impact of the oxide defects is significantly more pronounced than in large area transistors. This combination enables the investigation of charge transitions of single defects. In this study, we perform random telegraph noise (RTN) measurements on about 300 devices to statistically characterize oxide defects in a Si/SiO 2 technology. To extract the noise parameters from the measurements, we make use of the Canny edge detector. From the data, we obtain distributions of the step heights of defects, i.e., their impact on the threshold voltage of the devices. Detailed measurements of a subset of the defects further allow us to extract their vertical position in the oxide and their trap level using both analytical estimations and full numerical simulations. Contrary to published literature data, we observe a bimodal distribution of step heights, while the extracted distribution of trap levels agrees well with recent studies.

Context: Mounting evidence suggests beneficial effects of brown adipose tissue (BAT) activation on glucose and lipid metabolism in humans. It is unclear whether cold-induced BAT activation affects not only insulin sensitivity but also insulin secretion. Likewise, the role in clearing circulating fatty acids (FAs) has not been fully explored., Objective: Exploring the effects of cold-induced BAT activation on insulin sensitivity and secretion, as well as on plasma FA profiles., Design: Fifteen healthy men participated in a cross-balanced repeated within-subject study with two experimental conditions. Subjects were exposed to thermoneutrality (22°C) and to moderate cold (18.06°C, shivering excluded) by use of a water-perfused whole body suit. Cold-induced BAT activation was quantified by [18F]-fluorodeoxyglucose positron emission tomography-computed tomography in a subset of volunteers. A Botnia clamp procedure was applied to determine pancreatic first phase insulin response (FPIR) and insulin sensitivity. Hormones and metabolites, including 26 specific plasma FAs, were sampled throughout the experiment., Results: Cold exposure induced BAT activity. Plasma noradrenaline and dopamine concentrations increased in response to cold. Peripheral glucose uptake and insulin sensitivity significantly improved by ∼20%, whereas FPIR remained stable. Lignoceric acid (C24:0) concentrations increased, whereas levels of eicosanoic acid (C20:1n9), nervonic acid (C24:1n9), and behenic acid (C22:0) decreased., Conclusions: Cold-exposure induces sympathetic nervous system activity and BAT metabolism in humans, resulting in improved glucose metabolism without affecting pancreatic insulin secretion. In addition, BAT activation is associated with altered circulating concentrations of distinct FAs. These data support the concept that human BAT metabolism significantly contributes to whole body glucose and lipid utilization in a coordinated manner., (Copyright © 2017 Endocrine Society)