1. In-situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas
- Author
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Wang, Ting-Ting, Dong, Sining, Li, Chong, Yue, Wen-Cheng, Lyu, Yang-Yang, Wang, Chen-Guang, Zeng, Chang-Kun, Yuan, Zixiong, Zhu, Wei, Xiao, Zhi-Li, Lu, Xiaoli, Liu, Bin, Lu, Hai, Wang, Hua-Bing, Wu, Peiheng, Kwok, Wai-Kwong, and Wang, Yong-Lei
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed Matter - Materials Science ,Physics - Applied Physics - Abstract
Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produce extremely large electrical anisotropy via grating gating of a semiconductor two-dimensional electron gas (2DEG) of AlGaN/GaN. We show that periodically modulated electric potential in the 2DEG induces in-plane electrical anisotropy, which is significantly enhanced in a magnetic field, leading to an ultra large electrical anisotropy. This is induced by a giant positive magnetoresistance and a giant negative magnetoresistance under two orthogonally oriented in-plane current flows, respectively. This giant electrical anisotropy is in-situ tunable by tailoring both the grating gate voltage and the magnetic field. Our semiconductor device with controllable giant electrical anisotropy will stimulate new device applications, such as multi-terminal memtransistors and bionic synapses.
- Published
- 2024
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