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In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices.

Background Lung cancer ranks first in terms of incidence and mortality rates among cancers, with a 5-year survival rate of less than 20%. Many ways have been used to screen for early lung cancer, among which artificial intelligence (AI) has greatly improved the detection rate. However, how to use AI technologies to effectively manage atypical lung nodules to timely find early lung cancer, and to identify associated factors of lung nodule growth, which is an issue significantly associated with the guidance of clinical management of lung nodules. Objective To investigate the influencing factors of pulmonary nodules growth identified by AI-based follow-up and relevant clinical value. Methods A total of 175 patients with pulmonary nodules admitted to the Third Affiliated Hospital of Jinzhou Medical University in April 2019 were selected for a retrospective study. General clinical data, and AI-based analysis of imaging information related to pulmonary nodules was collected. The growth of pulmonary nodules〔solid nodules (in 82 cases) and ground-glass nodules (in 93 cases) classified by AI-based analysis〕 were observed by regular follow-ups. The influencing factors of pulmonary nodules growth were explored by Cox regression analysis. Results Patients with solid nodules had higher prevalence of solid components, and mean CT quantitative parameters of nodules than those with ground-glass nodules (P

In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si) (Sample B). Firstly, Y-doped and Si-doped HfO2 MFM devices exhibit domain sizes of 5.64 nm and 12.47 nm, respectively. Secondly, Si-doped HfO2 MFM devices (Sample B) have better CVS time-dependent breakdown and cycle-to-breakdown stability than Y-doped HfO2 MFM devices (Sample A). Therefore, a larger domain size showing higher extrapolated voltage under CVS time-dependent breakdown and cycle-to-breakdown evaluations was observed, indicating that the domain size crucially impacts the stability of MFM memory. [ABSTRACT FROM AUTHOR]

In this work, we demonstrated Ga2O3-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga2O3:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga2O3 power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga2O3 power MOSFETs. [ABSTRACT FROM AUTHOR]

This work demonstrates a trench isolated lateral double-implanted MOSFET (LDMOS) on Si-face in 4H-silicon carbide (SiC). A device $\vphantom {_{\int _{}}}$ where ${L}_{\textit {ch}} = 0.8\,\,\mu \text{m}$ and ${L}_{d} = 12\,\,\mu \text{m}$ shows an ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$ of 22.9 $\text{m}\Omega $ cm2 at a ${V}_{\text {GS}}$ of 20 V and a breakdown voltage (BV) of 1100 V, corresponding to a high BV2/ ${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$ of 55.5 MW/cm2. Devices that have different ${L}_{\text {ch}}$ , ${L}_{\text {JFET}}$ , ${L}_{d}$ , and P-top dose values are measured in order to investigate the effects of geometry on the static performance. Operations at 150 °C are measured to evaluate the temperature performance. Gate charge waveforms are also measured in order to include the switching performance in the evaluation. The ${R}_{ \mathrm{\scriptscriptstyle ON}} \times {Q}_{G}$ and ${R}_{ \mathrm{\scriptscriptstyle ON}} \times {Q}_{\text {GD}}$ values are calculated as 17.7 and $9.0~\Omega $ nC, respectively, which are promising for power-integrated circuit applications. [ABSTRACT FROM AUTHOR]

This article reports that the enhanced forward gate bias time-dependent dielectric breakdown (TDDB) reliability and interface quality are achieved in 5-nm ferroelectric Hf0.5Zr0.5O2 (HZO) technologies by using the NH3 plasma interfacial layer (IL) treatment and microwave annealing (MWA). An orthorhombic crystalline phase is observed in the annealed HZO film with NH3 plasma IL treatment and MWA, and NH3 plasma IL treatment can suppress Hf/Zr interdiffusion. Metal-oxide-semiconductor capacitors (MOSCAPs) subjected to NH3 plasma IL treatment and 2100-W MWA also have a higher extrapolated operating voltage for a ten-year lifetime at 0.01% failure and lower interface state density (Dit) compared to the devices subjected to only rapid thermal annealing (RTA) at 600 °C. Therefore, NH3 plasma treatment and MWA are effective for improving the TDDB reliability and interface quality of the ultrathin ferroelectric HZO. [ABSTRACT FROM AUTHOR]

In this article, we demonstrate that a physics-based compact model can facilitate to analyze the reliability using an example of γ-ray induced instability in AlGaN/GaN HEMTs. First, the typical AlGaN/GaN HEMTs are subjected to the cumulative γ-ray irradiation, exhibiting the drain current (ID) increase. In order to further elucidation, the root cause, the compact model is implemented and calibrated with the pristine case. Then, ID – VG and ID – VD characteristics subjected to the γ-ray irradiation are fitted with the compact model. The extracted μ and Rc are consistent with the results obtained by the Hall measurement and circular transmission line measurement (C-TLM). By comparing the fitted curves with considering: 1) fitted μ (Rc is fixed as the pristine case) and 2) fitted Rc (μ is fixed as the pristine case), the shift of μ is identified as the root cause leading to the ID increase because of the better fitting results. Therefore, with the assistance of the physics-based compact model, the shift of the parameter can be further analyzed to understand the origin of the instability. [ABSTRACT FROM AUTHOR]

Nociceptors are key sensory receptors that transmit warning signals to the central nervous system in response to painful stimuli. This fundamental process is emulated in an electronic device by developing a novel artificial nociceptor with an ultrathin, nonstoichiometric gallium oxide (GaO x )-silicon oxide heterostructure. A large-area 2D-GaO x film is printed on a substrate through liquid metal printing to facilitate the production of conductive filaments. This nociceptive structure exhibits a unique short-term temporal response following stimulation, enabling a facile demonstration of threshold-switching physics. The developed heterointerface 2D-GaO x film enables the fabrication of fast-switching, low-energy, and compliance-free 2D-GaO x nociceptors, as confirmed through experiments. The accumulation and extrusion of Ag in the oxide matrix are significant for inducing plastic changes in artificial biological sensors. High-resolution transmission electron microscopy and electron energy loss spectroscopy demonstrate that Ag clusters in the material dispersed under electrical bias and regrouped spontaneously when the bias is removed owing to interfacial energy minimization. Moreover, 2D nociceptors are stable; thus, heterointerface engineering can enable effective control of charge transfer in 2D heterostructural devices. Furthermore, the diffusive 2D-GaO x device and its Ag dynamics enable the direct emulation of biological nociceptors, marking an advancement in the hardware implementation of artificial human sensory systems., (© 2024 The Author(s). Advanced Science published by Wiley‐VCH GmbH.)

In this work, we demonstrated Ga 2 O 3 -based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga 2 O 3 :Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga 2 O 3 power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga 2 O 3 power MOSFETs., (© 2023. The Author(s).)