49 results on '"Wu, Tian-Li"'
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2. Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
3. Using U-Net convolutional neural network to model pixel-based electrostatic potential distributions in GaN power MIS-HEMTs
4. Design and analysis of high electron mobility transistor (HEMT) inspired III-V electro-optic modulator topologies
5. Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates
6. Impacts of material parameters on breakdown voltage and location for power MOSFETs
7. Inflencing Factors for Pulmonary Nodular Growth Predicted by Artificial Intelligence-based Follow-up
8. A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔV TH Transients in p-GaN Gate Power HEMTs
9. GaN-based mini-LED matrix applied to multi-functional forward lighting
10. Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode
11. Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices
12. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory
13. Threshold Voltage Instability Measurement Circuit for Power GaN HEMTs Devices
14. Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)
15. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors
16. A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔVTH Transients in p-GaN Gate Power HEMTs
17. Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator
18. Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT
19. H-Bridge Derived Topology for Dynamic On-Resistance Evaluation in Power GaN HEMTs
20. Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
21. Using Graph Attention Network to Reversely Design GaN MIS-HEMTs Based on Hand-Drawn Characteristics
22. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors
23. Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies
24. Dynamic On-Resistance and Threshold Voltage Instability Evaluation Circuit for Power GaN HEMTs Devices
25. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO 2 Metal-Ferroelectric-Metal Memory.
26. Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS).
27. Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors
28. 1100 V, 22.9 mΩcm2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation
29. A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs
30. Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode
31. Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias
32. Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs
33. Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing
34. Numerical Study of 4H-SiC UMOSFETs with Split-Gate and P+ Shielding
35. Understanding $\gamma$ -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model
36. Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
37. 1100 V, 22.9 mΩcm 2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation.
38. A Compact Planar Quasi-Yagi Antenna With Bandpass Filtering Response
39. Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing.
40. Understanding γ-Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model.
41. Long Term Stability of Enhancement Mode GaN Power Devices : Lange termijn stabiliteit van GaN vermogencomponenten van het verrijkingstype
42. Wideband Omnidirectional Slotted Patch Antenna With Filtering Response
43. Design of a Low Profile and Compact Omnidirectional Filtering Patch Antenna
44. Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
45. Gate Stability of GaN-Based HEMTs with P-Type Gate
46. Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications
47. Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs
48. Embedded Hybrid-Dimensional Heterointerface for Filament Modulation in 2D Material-Based Artificial Nociceptor.
49. Demonstration of MOCVD-grown Ga 2 O 3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS).
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