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1. Search for a massless particle beyond the Standard Model in the Σ+ → p + invisible decay

Author

M. Ablikim, M.N. Achasov, P. Adlarson, O. Afedulidis, X.C. Ai, R. Aliberti, A. Amoroso, Q. An, Y. Bai, O. Bakina, I. Balossino, Y. Ban, H.-R. Bao, V. Batozskaya, K. Begzsuren, N. Berger, M. Berlowski, M. Bertani, D. Bettoni, F. Bianchi, E. Bianco, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, G.R. Che, G. Chelkov, C. Chen, C.H. Chen, Chao Chen, G. Chen, H.S. Chen, H.Y. Chen, M.L. Chen, S.J. Chen, S.L. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Y.Q. Chen, Z.J. Chen, Z.Y. Chen, S.K. Choi, G. Cibinetto, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, C.Q. Deng, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, B. Ding, X.X. Ding, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, M.C. Du, S.X. Du, Z.H. Duan, P. Egorov, Y.H. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, Y.Q. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, Y.T. Feng, M. Fritsch, C.D. Fu, J.L. Fu, Y.W. Fu, H. Gao, X.B. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, L. Ge, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, S. Gramigna, M. Greco, M.H. Gu, Y.T. Gu, C.Y. Guan, Z.L. Guan, A.Q. Guo, L.B. Guo, M.J. Guo, R.P. Guo, Y.P. Guo, A. Guskov, J. Gutierrez, K.L. Han, T.T. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, T. Holtmann, P.C. Hong, G.Y. Hou, X.T. Hou, Y.R. Hou, Z.L. Hou, B.Y. Hu, H.M. Hu, J.F. Hu, S.L. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, F. Hölzken, N. Hüsken, N. in der Wiesche, J. Jackson, S. Janchiv, J.H. Jeong, Q. Ji, Q.P. Ji, W. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, X.Q. Jia, Z.K. Jia, D. Jiang, H.B. Jiang, P.C. Jiang, S.S. Jiang, T.J. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, J.K. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, X.M. Jing, T. Johansson, S. Kabana, N. Kalantar-Nayestanaki, X.L. Kang, X.S. Kang, M. Kavatsyuk, B.C. Ke, V. Khachatryan, A. Khoukaz, R. Kiuchi, O.B. Kolcu, B. Kopf, M. Kuessner, X. Kui, N. Kumar, A. Kupsc, W. Kühn, J.J. Lane, P. Larin, L. Lavezzi, T.T. Lei, Z.H. Lei, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H.B. Li, H.J. Li, H.N. Li, Hui Li, J.R. Li, J.S. Li, Ke Li, L.J. Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, Q.M. Li, Q.X. Li, R. Li, S.X. Li, T. Li, W.D. Li, W.G. Li, X. Li, X.H. Li, X.L. Li, X.Z. Li, Xiaoyu Li, Y.G. Li, Z.J. Li, Z.X. Li, C. Liang, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, C.C. Lin, D.X. Lin, T. Lin, B.J. Liu, B.X. Liu, C. Liu, C.X. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, L.C. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.D. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H. Ma, H.L. Ma, J.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, T. Ma, X.T. Ma, X.Y. Ma, Y. Ma, Y.M. Ma, F.E. Maas, M. Maggiora, S. Malde, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, B. Moses, N.Yu. Muchnoi, J. Muskalla, Y. Nefedov, F. Nerling, L.S. Nie, I.B. Nikolaev, Z. Ning, S. Nisar, Q.L. Niu, W.D. Niu, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, P. Patteri, Y.P. Pei, M. Pelizaeus, H.P. Peng, Y.Y. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, C.F. Qiao, X.K. Qiao, J.J. Qin, L.Q. Qin, L.Y. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, Z.H. Qu, C.F. Redmer, K.J. Ren, A. Rivetti, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, N. Salone, A. Sarantsev, Y. Schelhaas, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, Z.J. Shang, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, W.H. Shen, X.Y. Shen, B.A. Shi, H. Shi, H.C. Shi, J.L. Shi, J.Y. Shi, Q.Q. Shi, S.Y. Shi, X. Shi, J.J. Song, T.Z. Song, W.M. Song, Y.J. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, Y.J. Su, G.B. Sun, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, K. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, Y. Sun, Y.J. Sun, Y.Z. Sun, Z.Q. Sun, Z.T. Sun, C.J. Tang, G.Y. Tang, J. Tang, M. Tang, Y.A. Tang, L.Y. Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, Z.F. Tian, I. Uman, Y. Wan, S.J. Wang, B. Wang, B.L. Wang, Bo Wang, D.Y. Wang, F. Wang, H.J. Wang, J.J. Wang, J.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, N.Y. Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.P. Wang, X. Wang, X.F. Wang, X.J. Wang, X.L. Wang, X.N. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.L. Wang, Y.N. Wang, Y.Q. Wang, Yaqian Wang, Yi Wang, Z. Wang, Z.L. Wang, Z.Y. Wang, Ziyi Wang, D.H. Wei, F. Weidner, S.P. Wen, Y.R. Wen, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, C. Wu, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.H. Wu, Y.J. Wu, Z. Wu, L. Xia, X.M. Xian, B.H. Xiang, T. Xiang, D. Xiao, G.Y. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, M. Xu, Q.J. Xu, Q.N. Xu, W. Xu, W.L. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, Z.S. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, X.Q. Yan, H.J. Yang, H.L. Yang, H.X. Yang, Tao Yang, Y. Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, Z.W. Yang, Z.P. Yao, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, J.S. Yu, T. Yu, X.D. Yu, Y.C. Yu, C.Z. Yuan, J. Yuan, L. Yuan, S.C. Yuan, Y. Yuan, Y.J. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, S.H. Zeng, X. Zeng, Y. Zeng, Y.J. Zeng, X.Y. Zhai, Y.C. Zhai, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.C. Zhang, H.H. Zhang, H.Q. Zhang, H.R. Zhang, H.Y. Zhang, J. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.S. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jianyu Zhang, L.M. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, R.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Y.M. Zhang, Yan Zhang, Yao Zhang, Z.D. Zhang, Z.H. Zhang, Z.L. Zhang, Z.Y. Zhang, Z.Z. Zhang, G. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, N. Zhao, R.P. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, B.M. Zheng, J.P. Zheng, W.J. Zheng, Y.H. Zheng, B. Zhong, X. Zhong, H. Zhou, J.Y. Zhou, L.P. Zhou, S. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, K.S. Zhu, L. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, T.J. Zhu, W.D. Zhu, Y.C. Zhu, Z.A. Zhu, J.H. Zou, and J. Zu

Subjects
BESIII, FCNC process, Hyperon decay, BSM particle, Physics, QC1-999
Abstract

A massless particle beyond the Standard Model is searched for in the two-body decay Σ+→p+invisible using (1.0087±0.0044)×1010 J/ψ events collected at a center-of-mass energy of s=3.097GeV with the BESIII detector at the BEPCII collider. No significant signal is observed, and the upper limit on the branching fraction B(Σ+→p+invisible) is determined to be 3.2×10−5 at the 90% confidence level. This is the first search for a flavor-changing neutral current process with missing energy in hyperon decays which plays an important role in constraining new physics models.

Published
2024
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2. Determination of spin and parity of D(s)⁎ mesons

Author

M. Ablikim, M.N. Achasov, P. Adlarson, R. Aliberti, A. Amoroso, M.R. An, Q. An, Y. Bai, O. Bakina, I. Balossino, Y. Ban, V. Batozskaya, K. Begzsuren, N. Berger, M. Berlowski, M. Bertani, D. Bettoni, F. Bianchi, E. Bianco, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, T.T. Chang, W.L. Chang, G.R. Che, G. Chelkov, C. Chen, Chao Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Y.Q. Chen, Z.J. Chen, W.S. Cheng, S.K. Choi, X. Chu, G. Cibinetto, S.C. Coen, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, B. Ding, X.X. Ding, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, Z.H. Duan, P. Egorov, Y.L. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, K Fischer, M. Fritsch, C. Fritzsch, C.D. Fu, Y.W. Fu, H. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, S. Gramigna, M. Greco, M.H. Gu, Y.T. Gu, C.Y Guan, Z.L. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, X.T. H., W.Y. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, T. Holtmann, P.C. Hong, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, N Hüsken, W. Imoehl, M. Irshad, J. Jackson, S. Jaeger, S. Janchiv, J.H. Jeong, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, Z.K. Jia, P.C. Jiang, S.S. Jiang, T.J. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, X. K., S. Kabana, N. Kalantar-Nayestanaki, X.L. Kang, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, A. Khoukaz, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuessner, A. Kupsc, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, T.T. Lei, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, Hui Li, J.R. Li, J.S. Li, J.W. Li, Ke Li, L.J Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, S.X. Li, T. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Y.G. Li, Z.J. Li, Z.X. Li, Z.Y. Li, C. Liang, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, D.X. Lin, T. Lin, B.J. Liu, B.X. Liu, C. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, L.C. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H.L. Ma, J.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.Y. Ma, Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, N.Yu. Muchnoi, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, Y.P. Pei, M. Pelizaeus, H.P. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, S. Pogodin, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, C.F. Redmer, K.J. Ren, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, N. Salone, A. Sarantsev, Y. Schelhaas, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, W.H. Shen, X.Y. Shen, B.A. Shi, H.C. Shi, J.L. Shi, J.Y. Shi, Q.Q. Shi, R.S. Shi, X. Shi, J.J. Song, T.Z. Song, W.M. Song, Y.J. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, Y.J. Su, G.B. Sun, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, K. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, Y. Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, Y.A. Tang, L.Y Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, Z.F. Tian, I. Uman, B. Wang, B.L. Wang, Bo Wang, C.W. Wang, D.Y. Wang, F. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.J. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.H. Wang, Y.N. Wang, Y.Q. Wang, Yaqian Wang, Yi Wang, Z. Wang, Z.L. Wang, Z.Y. Wang, Ziyi Wang, D. Wei, D.H. Wei, F. Weidner, S.P. Wen, C.W. Wenzel, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, C. Wu, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.J Wu, Z. Wu, L. Xia, X.M. Xian, T. Xiang, D. Xiao, G.Y. Xiao, H. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, Q.J. Xu, W.L. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, X.Q Yan, H.J. Yang, H.L. Yang, H.X. Yang, Tao Yang, Y. Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, Z.W. Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, T. Yu, X.D. Yu, C.Z. Yuan, L. Yuan, S.C. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, X. Zeng, Y. Zeng, Y.J. Zeng, X.Y. Zhai, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.H. Zhang, H.Q. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.H. Zhang, Z.L. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, W.J. Zheng, Y.H. Zheng, B. Zhong, X. Zhong, H. Zhou, L.P. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, L. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, T.J. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, J.H. Zou, and J. Zu

Subjects
Charmed meson, Spin and parity, BESIII, Physics, QC1-999
Abstract

The spin and parity of the charmed mesons Ds⁎+, D⁎0 and D⁎+ are determined for the first time to be JP=1− with significances greater than 10σ over other hypotheses of 2+ and 3−, using an e+e− collision data sample with an integrated luminosity of 3.19 fb−1 collected by the BESIII detector at a center-of-mass energy of 4.178 GeV. Different spin-parity hypotheses are tested via a helicity amplitude analysis of the processes e+e−→Ds⁎+Ds−, D⁎0D0 and D⁎+D−, with Ds⁎+→Ds+γ, D⁎0→D0π0, and D⁎+→D+π0. The results confirm the quark model predictions.

Published
2023
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3. Search for the semi-leptonic decays Λc+→Λπ+π−e+νe and Λc+→pKS0π−e+νe

Author

M. Ablikim, M.N. Achasov, P. Adlarson, R. Aliberti, A. Amoroso, M.R. An, Q. An, Y. Bai, O. Bakina, I. Balossino, Y. Ban, V. Batozskaya, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, E. Bianco, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, T.T. Chang, W.L. Chang, G.R. Che, G. Chelkov, C. Chen, Chao Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Y.Q. Chen, Z.J. Chen, W.S. Cheng, S.K. Choi, X. Chu, G. Cibinetto, S.C. Coen, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, B. Ding, X.X. Ding, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, Z.H. Duan, P. Egorov, Y.L. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, K. Fischer, M. Fritsch, C. Fritzsch, C.D. Fu, Y.W. Fu, H. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, S. Gramigna, M. Greco, M.H. Gu, Y.T. Gu, C.Y. Guan, Z.L. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, X.T. H, W.Y. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, T. Holtmann, P.C. Hong, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, N. Hüsken, W. Imoehl, M. Irshad, J. Jackson, S. Jaeger, S. Janchiv, J.H. Jeong, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, Z.K. Jia, P.C. Jiang, S.S. Jiang, T.J. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, X. K, S. Kabana, N. Kalantar-Nayestanaki, X.L. Kang, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, A. Khoukaz, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuessner, A. Kupsc, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, T.T. Lei, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, Hui Li, J.R. Li, J.S. Li, J.W. Li, Ke Li, L.J. Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, S.X. Li, T. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Y.G. Li, Z.J. Li, Z.X. Li, Z.Y. Li, C. Liang, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, D.X. Lin, T. Lin, B.J. Liu, B.X. Liu, C. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, L.C. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H.L. Ma, J.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.Y. Ma, Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, N.Yu. Muchnoi, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, Y.P. Pei, M. Pelizaeus, H.P. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, S. Pogodin, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, C.F. Redmer, K.J. Ren, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, N. Salone, A. Sarantsev, Y. Schelhaas, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, W.H. Shen, X.Y. Shen, B.A. Shi, H.C. Shi, J.L. Shi, J.Y. Shi, Q.Q. Shi, R.S. Shi, X. Shi, J.J. Song, T.Z. Song, W.M. Song, Y.J. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, Y.J. Su, G.B. Sun, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, K. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, Y. Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, Y.A. Tang, L.Y. Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, Z.F. Tian, I. Uman, B. Wang, B.L. Wang, Bo Wang, C.W. Wang, D.Y. Wang, F. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.J. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.H. Wang, Y.N. Wang, Y.Q. Wang, Yaqian Wang, Yi Wang, Z. Wang, Z.L. Wang, Z.Y. Wang, Ziyi Wang, D. Wei, D.H. Wei, F. Weidner, S.P. Wen, C.W. Wenzel, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, C. Wu, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.J. Wu, Z. Wu, L. Xia, X.M. Xian, T. Xiang, D. Xiao, G.Y. Xiao, H. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, Q.J. Xu, W.L. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, X.Q. Yan, H.J. Yang, H.L. Yang, H.X. Yang, Tao Yang, Y. Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, Z.W. Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, T. Yu, X.D. Yu, C.Z. Yuan, L. Yuan, S.C. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, X. Zeng, Y. Zeng, Y.J. Zeng, X.Y. Zhai, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.H. Zhang, H.Q. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.H. Zhang, Z.L. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, W.J. Zheng, Y.H. Zheng, B. Zhong, X. Zhong, H. Zhou, L.P. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, L. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, T.J. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, J.H. Zou, and J. Zu

Subjects
BESIII, Λc+ baryon, Semi-leptonic decays, Branching fractions, Physics, QC1-999
Abstract

We search for the semi-leptonic decays Λc+→Λπ+π−e+νe and Λc+→pKS0π−e+νe in a sample of 4.5fb−1 of e+e− annihilation data collected in the center-of-mass energy region between 4.600GeV and 4.699GeV by the BESIII detector at the BEPCII. No significant signals are observed, and the upper limits on the decay branching fractions are set to be B(Λc+→Λπ+π−e+νe)

Published
2023
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4. Synergistic effect of Pt and Hf on the early-stage oxidation behaviour of NiAl coating at 1000 °C

Author

Y.F. Yang, S.X. Ren, C.M. Deng, P. Ren, P.M. Zhang, R.L. Peng, Z.B. Bao, and W. Li

Subjects
Hafnium, Metal coatings, PSLS, TEM, Oxidation, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

The initial-stage oxidation behaviours of unmodified, Pt and Pt+Hf modified NiAl coating are systematically investigated by employing the photo-stimulated luminescence spectroscopy (PSLS) and transmission electron microscopy (TEM) technique. Both Pt and Hf additions can retard the θ- to α- Al2O3 phase transformation. The oxidation rates of the modified NiAl coatings are initially higher than that of the unmodified NiAl coating due to the longer presence of θ-Al2O3. However, they decrease drastically when the oxide in the scale turns to be α-Al2O3 dominantly. The delayed phase transformation in the modified coatings results in lower residual stress within the oxide scale.

Published
2022
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5. Search for invisible decays of a dark photon using e+e− annihilation data at BESIII

Author

M. Ablikim, M.N. Achasov, P. Adlarson, M. Albrecht, R. Aliberti, A. Amoroso, M.R. An, Q. An, X.H. Bai, Y. Bai, O. Bakina, R. Baldini Ferroli, I. Balossino, Y. Ban, V. Batozskaya, D. Becker, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, W.L. Chang, G. Chelkov, C. Chen, Chao Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Z.J. Chen, W.S. Cheng, S.K. Choi, X. Chu, G. Cibinetto, S.C. Coen, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, P. Egorov, Y.L. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, K. Fischer, M. Fritsch, C. Fritzsch, C.D. Fu, H. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, M. Greco, L.M. Gu, M.H. Gu, Y.T. Gu, C.Y. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, T.T. Han, W.Y. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, M. Himmelreich, T. Holtmann, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, N. Hüsken, W. Imoehl, M. Irshad, J. Jackson, S. Jaeger, S. Janchiv, E. Jang, J.H. Jeong, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, Z.K. Jia, H.B. Jiang, S.S. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, N. Kalantar-Nayestanaki, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, I.K. Keshk, A. Khoukaz, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuemmel, M. Kuessner, A. Kupsc, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, T.T. Lei, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, J.Q. Li, J.S. Li, J.W. Li, Ke Li, L.J. Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, S.X. Li, S.Y. Li, T. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Z.X. Li, Z.Y. Li, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, D.X. Lin, T. Lin, B.J. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.Y. Ma, Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, Q.A. Malik, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, N.Yu. Muchnoi, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, Y.P. Pei, M. Pelizaeus, H.P. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, S. Pogodin, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, Z. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, K.H. Rashid, C.F. Redmer, K.J. Ren, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, A. Sarantsev, Y. Schelhaas, C. Schnier, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, X.Y. Shen, B.A. Shi, H.C. Shi, J.Y. Shi, Q.Q. Shi, R.S. Shi, X. Shi, X.D. Shi, J.J. Song, W.M. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, K.X. Su, P.P. Su, Y.J. Su, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, X. Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.H. Tan, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, L.Y. Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, I. Uman, B. Wang, B.L. Wang, C.W. Wang, D.Y. Wang, F. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.H. Wang, Y.Q. Wang, Yaqian Wang, Z. Wang, Z.Y. Wang, Ziyi Wang, D.H. Wei, F. Weidner, S.P. Wen, C.W. Wenzel, D.J. White, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.J. Wu, Z. Wu, L. Xia, T. Xiang, D. Xiao, G.Y. Xiao, H. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, Q.J. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, H.J. Yang, H.L. Yang, H.X. Yang, L. Yang, S.L. Yang, Tao Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, T. Yu, X.D. Yu, C.Z. Yuan, L. Yuan, S.C. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, X. Zeng, Y. Zeng, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.H. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jianyu Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.H. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, Q. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, Y.H. Zheng, B. Zhong, C. Zhong, X. Zhong, H. Zhou, L.P. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, B.S. Zou, J.H. Zou, and J. Zu

Subjects
Dark sector, Dark photon, Invisible decays, Physics, QC1-999
Abstract

We report a search for a dark photon using 14.9 fb−1 of e+e− annihilation data taken at center-of-mass energies from 4.13 to 4.60 GeV with the BESIII detector operated at the BEPCII storage ring. The dark photon is assumed to be produced in the radiative annihilation process of e+e− and to predominantly decay into light dark matter particles, which escape from the detector undetected. The mass range from 1.5 to 2.9 GeV is scanned for the dark photon candidate, and no significant signal is observed. The mass dependent upper limits at the 90% confidence level on the coupling strength parameter ϵ for a dark photon coupling with an ordinary photon vary between 1.6×10−3 and 5.7×10−3.

Published
2023
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6. Search for an axion-like particle in radiative J/ψ decays

Author

M. Ablikim, M.N. Achasov, P. Adlarson, R. Aliberti, A. Amoroso, M.R. An, Q. An, Y. Bai, O. Bakina, R. Baldini Ferroli, I. Balossino, Y. Ban, V. Batozskaya, D. Becker, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, E. Bianco, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, T.T. Chang, W.L. Chang, G.R. Che, G. Chelkov, C. Chen, Chao Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Y.Q. Chen, Z.J. Chen, W.S. Cheng, S.K. Choi, X. Chu, G. Cibinetto, S.C. Coen, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, Z.H. Duan, P. Egorov, Y.L. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, K. Fischer, M. Fritsch, C. Fritzsch, C.D. Fu, Y.W. Fu, H. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, M. Greco, M.H. Gu, Y.T. Gu, C.Y. Guan, Z.L. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, X.T. H., W.Y. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, T. Holtmann, P.C. Hong, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, N. Hüsken, W. Imoehl, M. Irshad, J. Jackson, S. Jaeger, S. Janchiv, J.H. Jeong, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, Z.K. Jia, P.C. Jiang, S.S. Jiang, T.J. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, X. K., S. Kabana, N. Kalantar-Nayestanaki, X.L. Kang, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, A. Khoukaz, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuessner, A. Kupsc, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, T.T. Lei, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, Hui Li, J.R. Li, J.S. Li, J.W. Li, Ke Li, L.J. Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, S.X. Li, S.Y. Li, T. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Y.G. Li, Z.J. Li, Z.X. Li, Z.Y. Li, C. Liang, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, D.X. Lin, T. Lin, B.X. Liu, B.J. Liu, C. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, L.C. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H.L. Ma, J.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.Y. Ma, Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, N.Yu. Muchnoi, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, Y.P. Pei, M. Pelizaeus, H.P. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, S. Pogodin, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, C.F. Redmer, K.J. Ren, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, A. Sarantsev, Y. Schelhaas, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, W.H. Shen, X.Y. Shen, B.A. Shi, H.C. Shi, J.Y. Shi, Q.Q. Shi, R.S. Shi, X. Shi, J.J. Song, T.Z. Song, W.M. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, Y.J. Su, G.B. Sun, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, K. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, Y. Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, Y.A. Tang, L.Y. Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, Z.F. Tian, I. Uman, B. Wang, B.L. Wang, C.W. Wang, D.Y. Wang, F. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.J. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.H. Wang, Y.N. Wang, Y.Q. Wang, Yaqian Wang, Yi Wang, Z. Wang, Z.L. Wang, Z.Y. Wang, Ziyi Wang, D. Wei, D.H. Wei, F. Weidner, S.P. Wen, C.W. Wenzel, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, C. Wu, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.J. Wu, Z. Wu, L. Xia, X.M. Xian, T. Xiang, D. Xiao, G.Y. Xiao, H. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, Q.J. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, X.Q. Yan, H.J. Yang, H.L. Yang, H.X. Yang, Tao Yang, Y. Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, T. Yu, X.D. Yu, C.Z. Yuan, L. Yuan, S.C. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, X. Zeng, Y. Zeng, X.Y. Zhai, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.H. Zhang, H.Q. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.H. Zhang, Z.L. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, W.J. Zheng, Y.H. Zheng, B. Zhong, X. Zhong, H. Zhou, L.P. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, L. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, T.J. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, J.H. Zou, and J. Zu

Subjects
BESIII, Axion-like particle, Pseudo-Goldstone boson, Physics, QC1-999
Abstract

We search for an axion-like particle (ALP) a through the process ψ(3686)→π+π−J/ψ, J/ψ→γa, a→γγ in a data sample of (2.71±0.01)×109 ψ(3686) events collected by the BESIII detector. No significant ALP signal is observed over the expected background, and the upper limits on the branching fraction of the decay J/ψ→γa and the ALP-photon coupling constant gaγγ are set at 95% confidence level in the mass range of 0.165≤ma≤2.84GeV/c2. The limits on B(J/ψ→γa) range from 8.3×10−8 to 1.8×10−6 over the search region, and the constraints on the ALP-photon coupling are the most stringent to date for 0.165≤ma≤1.468GeV/c2.

Published
2023
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7. Apyrases in Arabidopsis thaliana

Author

R. Meng, L.Q. Zhu, Y.F. Yang, L.C. Zhu, Z.K. Hou, L. Jin, and B.C. Wang

Subjects
atpase family, atapy1 and atapy2, enzyme localizations and biochemical properties, Biology (General), QH301-705.5, Plant ecology, QK900-989
Abstract

Apyrases belong to the ATPase family of enzymes that hydrolyze phosphoanhydride bonds of nucleoside tri- and di-phosphates. These enzymes differ markedly from other phosphohydrolases due to their high specific activity, broad divalent cation requirement, broad nucleotide substrate specificity, and insensitivity to various inhibitors. In the past 30 years, apyrases have been frequently studied in mammals. In comparison, research of apyrases in plants has received little attention, despite the growth of plants being closely related to the apyrases. In this review, we summarize the research of the apyrases in Arabidopsis thaliana and point to the possible future directions of research. Apyrases have seven members found in Arabidopsis thaliana, each with different properties and functions. Currently, the characterization and functions of AtAPY1 and AtAPY2 have been reported, though, to the best of our knowledge, the other apyrase members (AtAPY3 to 7) have not yet been sufficiently described. In this review, we also summarize the progress being made and the difficulties encountered in apyrase research in Arabidopsis thaliana.

Published
2019
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8. Search for invisible decays of a dark photon using annihilation data at BESIII

Author

M. Ablikim, M.N. Achasov, P. Adlarson, M. Albrecht, R. Aliberti, A. Amoroso, M.R. An, Q. An, X.H. Bai, Y. Bai, O. Bakina, R. Baldini Ferroli, I. Balossino, Y. Ban, V. Batozskaya, D. Becker, K. Begzsuren, N. Berger, M. Bertani, D. Bettoni, F. Bianchi, J. Bloms, A. Bortone, I. Boyko, R.A. Briere, A. Brueggemann, H. Cai, X. Cai, A. Calcaterra, G.F. Cao, N. Cao, S.A. Cetin, J.F. Chang, W.L. Chang, G. Chelkov, C. Chen, Chao Chen, G. Chen, H.S. Chen, M.L. Chen, S.J. Chen, S.M. Chen, T. Chen, X.R. Chen, X.T. Chen, Y.B. Chen, Z.J. Chen, W.S. Cheng, S.K. Choi, X. Chu, G. Cibinetto, S.C. Coen, F. Cossio, J.J. Cui, H.L. Dai, J.P. Dai, A. Dbeyssi, R.E. de Boer, D. Dedovich, Z.Y. Deng, A. Denig, I. Denysenko, M. Destefanis, F. De Mori, Y. Ding, J. Dong, L.Y. Dong, M.Y. Dong, X. Dong, S.X. Du, P. Egorov, Y.L. Fan, J. Fang, S.S. Fang, W.X. Fang, Y. Fang, R. Farinelli, L. Fava, F. Feldbauer, G. Felici, C.Q. Feng, J.H. Feng, K. Fischer, M. Fritsch, C. Fritzsch, C.D. Fu, H. Gao, Y.N. Gao, Yang Gao, S. Garbolino, I. Garzia, P.T. Ge, Z.W. Ge, C. Geng, E.M. Gersabeck, A. Gilman, K. Goetzen, L. Gong, W.X. Gong, W. Gradl, M. Greco, L.M. Gu, M.H. Gu, Y.T. Gu, C.Y. Guan, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guo, A. Guskov, T.T. Han, W.Y. Han, X.Q. Hao, F.A. Harris, K.K. He, K.L. He, F.H. Heinsius, C.H. Heinz, Y.K. Heng, C. Herold, M. Himmelreich, T. Holtmann, G.Y. Hou, Y.R. Hou, Z.L. Hou, H.M. Hu, J.F. Hu, T. Hu, Y. Hu, G.S. Huang, K.X. Huang, L.Q. Huang, X.T. Huang, Y.P. Huang, T. Hussain, N. Hüsken, W. Imoehl, M. Irshad, J. Jackson, S. Jaeger, S. Janchiv, E. Jang, J.H. Jeong, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Ji, Y.Y. Ji, Z.K. Jia, H.B. Jiang, S.S. Jiang, X.S. Jiang, Y. Jiang, J.B. Jiao, Z. Jiao, S. Jin, Y. Jin, M.Q. Jing, T. Johansson, N. Kalantar-Nayestanaki, X.S. Kang, R. Kappert, M. Kavatsyuk, B.C. Ke, I.K. Keshk, A. Khoukaz, R. Kiuchi, R. Kliemt, L. Koch, O.B. Kolcu, B. Kopf, M. Kuemmel, M. Kuessner, A. Kupsc, W. Kühn, J.J. Lane, J.S. Lange, P. Larin, A. Lavania, L. Lavezzi, T.T. Lei, Z.H. Lei, H. Leithoff, M. Lellmann, T. Lenz, C. Li, C.H. Li, Cheng Li, D.M. Li, F. Li, G. Li, H. Li, H.B. Li, H.J. Li, H.N. Li, J.Q. Li, J.S. Li, J.W. Li, Ke Li, L.J. Li, L.K. Li, Lei Li, M.H. Li, P.R. Li, S.X. Li, S.Y. Li, T. Li, W.D. Li, W.G. Li, X.H. Li, X.L. Li, Xiaoyu Li, Z.X. Li, Z.Y. Li, H. Liang, Y.F. Liang, Y.T. Liang, G.R. Liao, L.Z. Liao, J. Libby, A. Limphirat, D.X. Lin, T. Lin, B.J. Liu, C.X. Liu, D. Liu, F.H. Liu, Fang Liu, Feng Liu, G.M. Liu, H. Liu, H.B. Liu, H.M. Liu, Huanhuan Liu, Huihui Liu, J.B. Liu, J.L. Liu, J.Y. Liu, K. Liu, K.Y. Liu, Ke Liu, L. Liu, Lu Liu, M.H. Liu, P.L. Liu, Q. Liu, S.B. Liu, T. Liu, W.K. Liu, W.M. Liu, X. Liu, Y. Liu, Y.B. Liu, Z.A. Liu, Z.Q. Liu, X.C. Lou, F.X. Lu, H.J. Lu, J.G. Lu, X.L. Lu, Y. Lu, Y.P. Lu, Z.H. Lu, C.L. Luo, M.X. Luo, T. Luo, X.L. Luo, X.R. Lyu, Y.F. Lyu, F.C. Ma, H.L. Ma, L.L. Ma, M.M. Ma, Q.M. Ma, R.Q. Ma, R.T. Ma, X.Y. Ma, Y. Ma, F.E. Maas, M. Maggiora, S. Maldaner, S. Malde, Q.A. Malik, A. Mangoni, Y.J. Mao, Z.P. Mao, S. Marcello, Z.X. Meng, J.G. Messchendorp, G. Mezzadri, H. Miao, T.J. Min, R.E. Mitchell, X.H. Mo, N.Yu. Muchnoi, Y. Nefedov, F. Nerling, I.B. Nikolaev, Z. Ning, S. Nisar, Y. Niu, S.L. Olsen, Q. Ouyang, S. Pacetti, X. Pan, Y. Pan, A. Pathak, Y.P. Pei, M. Pelizaeus, H.P. Peng, K. Peters, J.L. Ping, R.G. Ping, S. Plura, S. Pogodin, V. Prasad, F.Z. Qi, H. Qi, H.R. Qi, M. Qi, T.Y. Qi, S. Qian, W.B. Qian, Z. Qian, C.F. Qiao, J.J. Qin, L.Q. Qin, X.P. Qin, X.S. Qin, Z.H. Qin, J.F. Qiu, S.Q. Qu, K.H. Rashid, C.F. Redmer, K.J. Ren, A. Rivetti, V. Rodin, M. Rolo, G. Rong, Ch. Rosner, S.N. Ruan, A. Sarantsev, Y. Schelhaas, C. Schnier, K. Schoenning, M. Scodeggio, K.Y. Shan, W. Shan, X.Y. Shan, J.F. Shangguan, L.G. Shao, M. Shao, C.P. Shen, H.F. Shen, X.Y. Shen, B.A. Shi, H.C. Shi, J.Y. Shi, Q.Q. Shi, R.S. Shi, X. Shi, X.D. Shi, J.J. Song, W.M. Song, Y.X. Song, S. Sosio, S. Spataro, F. Stieler, K.X. Su, P.P. Su, Y.J. Su, G.X. Sun, H. Sun, H.K. Sun, J.F. Sun, L. Sun, S.S. Sun, T. Sun, W.Y. Sun, X. Sun, Y.J. Sun, Y.Z. Sun, Z.T. Sun, Y.H. Tan, Y.X. Tan, C.J. Tang, G.Y. Tang, J. Tang, L.Y. Tao, Q.T. Tao, M. Tat, J.X. Teng, V. Thoren, W.H. Tian, Y. Tian, I. Uman, B. Wang, B.L. Wang, C.W. Wang, D.Y. Wang, F. Wang, H.J. Wang, H.P. Wang, K. Wang, L.L. Wang, M. Wang, Meng Wang, S. Wang, T. Wang, T.J. Wang, W. Wang, W.H. Wang, W.P. Wang, X. Wang, X.F. Wang, X.L. Wang, Y. Wang, Y.D. Wang, Y.F. Wang, Y.H. Wang, Y.Q. Wang, Yaqian Wang, Z. Wang, Z.Y. Wang, Ziyi Wang, D.H. Wei, F. Weidner, S.P. Wen, C.W. Wenzel, D.J. White, U. Wiedner, G. Wilkinson, M. Wolke, L. Wollenberg, J.F. Wu, L.H. Wu, L.J. Wu, X. Wu, X.H. Wu, Y. Wu, Y.J. Wu, Z. Wu, L. Xia, T. Xiang, D. Xiao, G.Y. Xiao, H. Xiao, S.Y. Xiao, Y.L. Xiao, Z.J. Xiao, C. Xie, X.H. Xie, Y. Xie, Y.G. Xie, Y.H. Xie, Z.P. Xie, T.Y. Xing, C.F. Xu, C.J. Xu, G.F. Xu, H.Y. Xu, Q.J. Xu, X.P. Xu, Y.C. Xu, Z.P. Xu, F. Yan, L. Yan, W.B. Yan, W.C. Yan, H.J. Yang, H.L. Yang, H.X. Yang, L. Yang, S.L. Yang, Tao Yang, Y.F. Yang, Y.X. Yang, Yifan Yang, M. Ye, M.H. Ye, J.H. Yin, Z.Y. You, B.X. Yu, C.X. Yu, G. Yu, T. Yu, X.D. Yu, C.Z. Yuan, L. Yuan, S.C. Yuan, X.Q. Yuan, Y. Yuan, Z.Y. Yuan, C.X. Yue, A.A. Zafar, F.R. Zeng, X. Zeng, Y. Zeng, Y.H. Zhan, A.Q. Zhang, B.L. Zhang, B.X. Zhang, D.H. Zhang, G.Y. Zhang, H. Zhang, H.H. Zhang, H.Y. Zhang, J.J. Zhang, J.L. Zhang, J.Q. Zhang, J.W. Zhang, J.X. Zhang, J.Y. Zhang, J.Z. Zhang, Jianyu Zhang, Jiawei Zhang, L.M. Zhang, L.Q. Zhang, Lei Zhang, P. Zhang, Q.Y. Zhang, Shuihan Zhang, Shulei Zhang, X.D. Zhang, X.M. Zhang, X.Y. Zhang, Y. Zhang, Y.T. Zhang, Y.H. Zhang, Yan Zhang, Yao Zhang, Z.H. Zhang, Z.Y. Zhang, G. Zhao, J. Zhao, J.Y. Zhao, J.Z. Zhao, Lei Zhao, Ling Zhao, M.G. Zhao, Q. Zhao, S.J. Zhao, Y.B. Zhao, Y.X. Zhao, Z.G. Zhao, A. Zhemchugov, B. Zheng, J.P. Zheng, Y.H. Zheng, B. Zhong, C. Zhong, X. Zhong, H. Zhou, L.P. Zhou, X. Zhou, X.K. Zhou, X.R. Zhou, X.Y. Zhou, Y.Z. Zhou, J. Zhu, K. Zhu, K.J. Zhu, L.X. Zhu, S.H. Zhu, S.Q. Zhu, W.J. Zhu, Y.C. Zhu, Z.A. Zhu, B.S. Zou, J.H. Zou, and J. Zu

Subjects
Nuclear and High Energy Physics, High Energy Physics - Experiment (hep-ex), FOS: Physical sciences, High Energy Physics - Experiment
Abstract

We report a search for a dark photon using $14.9$~fb$^{-1}$ of $e^+e^-$ annihilation data taken at center-of-mass energies from 4.13 to 4.60~GeV with the BESIII detector operated at the BEPCII storage ring. The dark photon is assumed to be produced in the radiative annihilation process of $e^+e^-$ and to predominantly decay into light dark matter particles, which escape from the detector undetected. The mass range from 1.5 to 2.9~GeV is scanned for the dark photon candidate, and no significant signal is observed. The mass dependent upper limits at the 90$\%$ confidence level on the coupling strength parameter $\epsilon$ for a dark photon coupling with an ordinary photon vary between $1.6\times 10^{-3}$ and $5.7\times10^{-3}$., Comment: 8 pages, 3 figures

Published
2023

10. Hydroelastic wave diffraction by a vertical circular cylinder standing in a channel with an ice cover

Author

Y.F. Yang, G.X. Wu, and K. Ren

Subjects
Mechanics of Materials, Mechanical Engineering, Applied Mathematics, Condensed Matter Physics
Abstract

The problem of hydroelastic wave diffraction by a surface-piercing vertical circular cylinder mounted on the bottom of an ice-covered channel is considered. The ice sheet is modelled as an elastic thin plate with homogeneous properties, while the linearized velocity potential theory is adopted to describe the motion of the fluid. The solution starts from the Green function satisfying all other boundary conditions apart from that on the body surface. This is obtained through applying a Fourier transform in the longitudinal direction of the channel and adopting an eigenfunction expansion in the vertical direction. The boundary conditions on the side walls and ice edges are imposed through an orthogonal product. Through the Green function, the velocity potential due to a surface-piercing structure with arbitrary shape can be expressed through a source distribution formula derived in this work, in which only integrals over the body surface and its interaction line with the ice sheet need to be retained. For a vertical circular cylinder, the unknown source distribution can be expanded further into a Fourier series in the circumferential direction, and then the analytical solution of the velocity potential can be obtained further. Extensive results and discussions are provided for the hydrodynamic forces and vertical shear forces on the cylinder, as well as the deflection and strain of the ice sheet. In particular, the behaviour of the solution near one of the natural frequencies of the channel is investigated in detail.

Published
2022
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14. Apyrases in Arabidopsis thaliana

Author

Z.K. Hou, Y.F. Yang, B.C. Wang, L.Q. Zhu, R. Meng, L. Jin, and L.C. Zhu

Subjects
0106 biological sciences, 0301 basic medicine, chemistry.chemical_classification, biology, Apyrase, ATPase, Plant Science, Horticulture, biology.organism_classification, 01 natural sciences, 03 medical and health sciences, 030104 developmental biology, High specific activity, chemistry, Biochemistry, biology.protein, Arabidopsis thaliana, Substrate specificity, Nucleotide, 010606 plant biology & botany
Abstract

Apyrases belong to the ATPase family of enzymes that hydrolyze phosphoanhydride bonds of nucleoside tri- and di-phosphates. These enzymes differ markedly from other phosphohydrolases due to their high specific activity, broad divalent cation requirement, broad nucleotide substrate specificity, and insensitivity to various inhibitors. In the past 30 years, apyrases have been frequently studied in mammals. In comparison, research of apyrases in plants has received little attention, despite the growth of plants being closely related to the apyrases. In this review, we summarize the research of the apyrases in Arabidopsis thaliana and point to the possible future directions of research. Apyrases have seven members found in Arabidopsis thaliana, each with different properties and functions. Currently, the characterization and functions of AtAPY1 and AtAPY2 have been reported, though, to the best of our knowledge, the other apyrase members (AtAPY3 to 7) have not yet been sufficiently described. In this review, we also summarize the progress being made and the difficulties encountered in apyrase research in Arabidopsis thaliana.

Published
2019
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17. Different microbiomes are found in healthy breeder ducks and those with foot pad dermatitis

Author

Y.F. Yang, C. Chen, Q.F. Zeng, Jichun Wang, X.M. Ding, W.Q. Bai, K.Y. Zhang, Qin Simeng, Huanwei Peng, and S.P. Bai

Subjects
Male, Veterinary medicine, Firmicutes, animal diseases, Dermatitis, Foot Diseases, 03 medical and health sciences, Lactobacillus, RNA, Ribosomal, 16S, Animals, Microbiome, Cecum, Poultry Diseases, 030304 developmental biology, 0303 health sciences, biology, business.industry, Lachnospiraceae, 0402 animal and dairy science, Bacteroidetes, 04 agricultural and veterinary sciences, General Medicine, Poultry farming, biology.organism_classification, 040201 dairy & animal science, Gastrointestinal Microbiome, RNA, Bacterial, Ducks, Pyrosequencing, Animal Science and Zoology, Female, business, Foot (unit)
Abstract

Foot pad dermatitis (FPD) is a serious problem of the modern poultry industry, negatively affecting birds' welfare and health status, walking and feeding activity, growth performance, carcass quality, and economic performance of meat production. The gut microbiome in poultry with FPD has not been previously investigated. Therefore, we compared the cecal microbiomes of 8 breeding ducks with FPD to 8 control ducks (breeders with apparently healthy feet) by pyrosequencing the bacterial 16S ribosomal RNA gene. The results showed a significant β-diversity (P < 0.05) of cecal microbiota presented between healthy and FPD-affected breeder ducks. The plasma endotoxins, interleukin 1β (IL-1β), IL-17, IL-6, IL-10, and tumor necrosis factor-α concentration, and the abundance of class Clostridia in FPD-affected ducks was markedly higher (P < 0.05), however, the abundance of genus Prevotella, Lactobacillus, Lachnospiraceae UCG-008, and the Firmicutes to Bacteroidetes ratio in FPD-affected ducks was significantly lower (P < 0.05) when compared to healthy ducks. These findings suggest when duck breeders are affected with FPD, ducks show an increased inflammatory response and a difference of structure and composition of the cecal microbiome.

Published
2019

19. Warm die compaction and sintering of titanium and titanium alloy powders

Author

Y.F. Yang, G. B. Schaffer, Ma Qian, and S.D. Luo

Subjects
business.product_category, Materials science, Alloy, Metallurgy, Metals and Alloys, Compaction, Titanium alloy, Sintering, chemistry.chemical_element, engineering.material, Microstructure, Industrial and Manufacturing Engineering, Computer Science Applications, Titanium powder, chemistry, Modeling and Simulation, Ceramics and Composites, engineering, Die (manufacturing), business, Titanium
Abstract

A study has been made of the effect of non-lubricated warm die (200 C) compaction on the densification of hydride-dehydride (HDH) Ti powder, pre-alloyed (PA) Ti-6Al-4V and Ti-10V-2Fe-3Al powders, and HDH Ti and V-Fe-Al master alloy powder blends, compared to cold die compaction. Depending on the compaction pressure, which was varied from 200 to 1000 MPa, non-lubricated warm die (200 C) compaction was very effective for -100 mesh HDH Ti powder, increasing the green density by 5.0-9.4% theoretical density (TD). Die wall lubrication with stearic acid showed no influence on the green density when compacted at 800 MPa. With warm die (200 C) compaction, achieving a green density of greater than 90%TD was straightforward for HDH Ti powder when compacted at ≥750 MPa. Accordingly, near pore-free (≥99.5%TD) Ti microstructures were obtained after sintering at 1300 C for 120 min in vacuum when compacted at 1000 MPa. The resulting increment in the sintered density was between 2.0%TD and 4.4%TD. Warm die (200 C) compaction showed no effect on PA Ti-10V-2Fe-3Al powder and only a small effect on PA Ti-6Al-4V powder when compacted at 1000 MPa. However, it was still virtually effective for Ti-10V-2Fe-3Al powder blends made of HDH Ti powder and V-Fe-Al master alloy powder. The observations were compared with literature data and discussed in accordance with the yield strength of Ti, Ti-6Al-4V, Ti-10V-2Fe-3Al and Al 3V as a function of temperature.

Published
2014
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21. Thermal explosion reaction behaviors between Ti and C with Ni as additive under air and Ar atmosphere

Author

Hualei Wang, Y.F. Yang, Ru-Yi Zhao, Q.C. Jiang, and J.G. Wang

Subjects
Materials science, Mechanical Engineering, Metals and Alloys, Autoignition temperature, Atmosphere, Chemical engineering, Mechanics of Materials, Materials Chemistry, Astrophysics::Solar and Stellar Astrophysics, Particle, Thermal explosion, Astrophysics::Earth and Planetary Astrophysics, Particle size, Composite material, Physics::Atmospheric and Oceanic Physics
Abstract

Reaction behaviors and products of thermal explosion reaction from Ni–Ti–C system under air and Ar atmosphere were investigated, respectively. The ignition temperature for the thermal explosion reaction under air is much lower than that under Ar atmosphere. Under two atmospheres, increasing the Ni content and Ti particle size can increase the ignition temperature, respectively. Under air, increasing Ni and C particle sizes can decrease the ignition temperature, but the opposite results are achieved under Ar atmosphere. The reaction products are mainly dependent on the C particle size under two atmospheres.

Published
2009
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22. Effect of Cu content on the reaction behaviors of self-propagating high-temperature synthesis in Cu–Ti–B4C system

Author

Hualei Wang, Q.C. Jiang, Y.H. Liang, Y.F. Yang, and Ru-Yi Zhao

Subjects
Materials science, Mechanical Engineering, Metallurgy, Metals and Alloys, Analytical chemistry, Self-propagating high-temperature synthesis, Combustion, Microstructure, Grain size, law.invention, Ignition system, Mechanics of Materials, law, visual_art, Materials Chemistry, visual_art.visual_art_medium, Ceramic, Adiabatic process, Chemical composition
Abstract

The SHS reaction behaviors of the Cu–Ti–B4C system with various Cu content were investigated. Theoretical calculation of the adiabatic temperatures reveals that the reaction in the Cu–Ti–B4C system is self-sustainable for the presence of 0–72.22 wt.% Cu in the reactants without any preheat. With the increase of Cu content, the adiabatic temperatures, combustion temperatures and wave velocity decrease greatly, while the ignition time shows first a remarkable decrease and then an increase with the minimum value at 20 wt.% Cu. Moreover, with the increase of Cu content, the sizes of the TiC and TiB2 grains decrease considerably.

Published
2008
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23. Effects of C particle size on the ignition and combustion characteristics of the SHS reaction in the 20wt.% Ni–Ti–C system

Author

Lei Zhan, Y.F. Yang, Ru-Yi Zhao, Q.C. Jiang, Y.H. Liang, and Hualei Wang

Subjects
Titanium carbide, Materials science, Mechanical Engineering, Metallurgy, Metals and Alloys, Self-propagating high-temperature synthesis, Analytical chemistry, Combustion, Microstructure, law.invention, Ignition system, chemistry.chemical_compound, chemistry, Mechanics of Materials, law, Differential thermal analysis, Materials Chemistry, Particle, Particle size
Abstract

C particle size plays an important role in the ignition and combustion characteristics of the SHS reaction in the 20 wt.% Ni–Ti–C system. When coarse C particles (∼38 and ∼75 μm) are used, the SHS reactions consist of two different combustion stages with different brightness intensity of the combustion wave; XRD results indicate that the first and second combustion stages mainly correspond to the formation of Ni–Ti compounds and TiC ceramics, respectively. However, the final reaction is incomplete with a few Ni–Ti compounds and unreacted C. In contrast, when the fine C particle (∼1 μm) is used, the SHS reaction consists of only one combustion stage with high brightness intensity of the combustion wave; XRD result indicates that final products consist of TiC and Ni, without any intermediate phase. With the decrease of C particle size, the wave velocities increase, and the ignition time becomes shorter. In addition, the morphology of TiC particulate changes to near-spherical, as C particle size decreases.

Published
2008
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24. Reaction path of the synthesis of TiC–TiB2 in Cu–Ti–B4C system

Author

Y.H. Liang, Y.L. Du, Hualei Wang, Y.F. Yang, and Q.C. Jiang

Subjects
Titanium carbide, Materials science, Scanning electron microscope, Diffusion, Metallurgy, Analytical chemistry, Intermetallic, chemistry.chemical_element, chemistry.chemical_compound, chemistry, visual_art, Differential thermal analysis, visual_art.visual_art_medium, Ceramic, Boron, Eutectic system
Abstract

The reaction path of TiC–TiB 2 formation in 20 wt.% Cu–Ti–B 4 C powder mixtures was studied by using differential thermal analysis (DTA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The Cu–Ti intermetallics (mainly Ti 2 Cu and TiCu) were formed initially via solid-state diffusion reactions between Cu and Ti particles; and then the Cu–Ti liquids were formed from the eutectic reaction between Ti 2 Cu and TiCu at about 965 °C and the melting of the Ti 2 Cu. Cu–Ti liquid spread over the B 4 C and Ti particles, subsequently carbon and boron atoms from the bulk B 4 C continuously diffuse into the liquid phase to form liquid Cu–Ti–B–C. Finally, TiC and TiB 2 particulates precipitate out of the saturated liquid. The exthermic reaction was complete after the addition of Cu. The results showed that Cu not only participated in the reaction, but changed the reaction path between Ti and B 4 C.

Published
2008
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25. Evolution process of the synthesis of TiC in the Cu–Ti–C system

Author

Huiyuan Wang, Y.H. Liang, Y.F. Yang, Y. Wang, and Q.C. Jiang

Subjects
Chemical engineering, Mechanics of Materials, Chemistry, Scanning electron microscope, Mechanical Engineering, Diffusion, Differential thermal analysis, Materials Chemistry, Metals and Alloys, Mineralogy, Ternary operation, Eutectic system
Abstract

The evolution process of TiC formation in the 20 wt.% Cu–Ti–C powder mixtures was studied by using differential thermal analysis (DTA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The Ti x Cu y compounds (Ti 2 Cu, TiCu, Ti 3 Cu 4 and TiCu 4 ) formed initially via solid-state diffusion reactions between Cu and Ti particles; and then Ti 2 Cu and TiCu can form a Cu–Ti eutectic liquids at about 1233 K. The unreacted Ti and C particles dissolved into the Cu–Ti liquids and led to the formation of Cu–Ti–C ternary liquids; subsequently, TiC particulates precipitated out of the saturated liquids. At the same time, also the formation of Ti 2 Cu occurred at the interface between the Cu–Ti liquids and the unreacted Ti particles. As the temperature increased further, the Ti 2 Cu melted and more Cu–Ti liquids formed; and then C particles continuously dissolved into the Cu–Ti–C liquids and TiC particulates gradually precipitated out of the saturated liquids.

Published
2008
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26. Effect of Ni content on the reaction behaviors of self-propagating high-temperature synthesis in the Ni–Ti–B4C system

Author

Y.H. Liang, Ru-Yi Zhao, Hualei Wang, Y.F. Yang, and Q.C. Jiang

Subjects
Materials science, Reaction behavior, Self-propagating high-temperature synthesis, Mineralogy, Microstructure, Combustion, Ceramic particle, law.invention, Ignition system, Chemical engineering, law, visual_art, visual_art.visual_art_medium, Ceramic, Adiabatic process
Abstract

Reaction behaviors of self-propagating high-temperature synthesis (SHS) in the Ni–Ti–B4C systems with various Ni contents were investigated. The addition of Ni supports the initiation of ignition. Theoretical calculation of the adiabatic temperatures reveals that the reactions in the Ni–Ti–B4C systems are self-sustainable for the presence of 0–66.4 wt% Ni in the reactants without any preheat. The Ni content plays a significant role in controlling reaction behavior and the constituents of the final products, but can not affect the ignition process greatly. With the increase of Ni content, combustion temperatures, wave velocities and ceramic particle sizes decrease, while the ignition time shows first a remarkable decrease and then an increase with the minimum value at 20 wt% Ni.

Published
2008
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27. Effects of modification and heat-treatment on the abrasive wear behavior of hypereutectic Al–Si alloys

Author

Y.F. Yang, Chen Xu, Hualei Wang, and Q.C. Jiang

Subjects
Materials science, Silicon, chemistry, Mechanics of Materials, Abrasion (mechanical), Mechanical Engineering, Abrasive, Metallurgy, technology, industry, and agriculture, chemistry.chemical_element, General Materials Science, Tribology, equipment and supplies
Abstract

In the present study, Al–Si alloys with Si contents of 23, 26, 28 and 31 wt.%, respectively, were modified with a new modifying agent. The results show that the primary silicon size decreased about 8–10 times after modification. The wear rates of the modified and heat-treated Al–Si alloys are lower than those of the unmodified and non-heat-treated Al–Si alloys, respectively. The silicon content in the range of 23–31 wt.% has a significant effect on the wear rates of the same processed Al–Si alloys (modification and heat treatment). Under the same load, the wear rates of the same processed Al–Si alloys decreased with the increasing silicon content. The abrasion took place mainly by cutting and partly by ploughing actions for the non-heat-treated Al–Si alloys, or on the contrary, mainly by ploughing and partly by cutting actions for heat-treated Al–Si alloys.

Published
2007
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28. Molecular cloning, characterization and expression analysis of WAG-1 in the pistillody line of common wheat

Author

Y.F. Yang, Q.X. Sun, Z.Y. Jiang, S.H. Wei, Zaijun Yang, Zhengsong Peng, Z.S. Hu, and Q.H. Wang

Subjects
Genetics, Agamous, Intron, food and beverages, MADS Domain Proteins, General Medicine, Flowers, Molecular cloning, Biology, Molecular biology, Open reading frame, Exon, Gene Expression Regulation, Plant, Complementary DNA, Common wheat, Cloning, Molecular, human activities, Molecular Biology, Gene, Triticum, Plant Proteins
Abstract

Wheat WAG-1 is a C-class MADS-box gene, which is orthologous to AGAMOUS in Arabidopsis. In this study, we report the cloning, characterization, and expression patterns of WAG-1 in the pistillody mutant HTS-1 and its sib-line CSTP. The cDNA of WAG-1 was found to be 765 bp in length, which was equal to the length of its open reading frame, encoding 254 amino acids. The location of WAG-1 revealed that it has three homologous genes from the short arm of chromosome 1A, 1B, and 1D. Their genomic sequences were determined to be 5864, 6454, and 6447 bp long, respectively, and possessed seven exons and six introns. Young spikes from HTS-1 contained higher levels of WAG-1 transcript than did those from CSTP, and the transcript levels in the young spikes (7-10 mm in length) of HTS-1 increased 3.3-fold relative to those of the CSTP line. The transcript level in the pistil and pistil-like stamens of HTS-1 was over 2-fold higher than that in the stamens of CSTP, and expression in the pistil-like stamens of HTS-1 was slightly higher than that in its pistils. These data provide a basis for future research into the function of WAG-1, and offer further insight into the molecular mechanism of the pistillody mutation in common wheat.

Published
2015

29. Effect of La2O3 in the Al–P–Ti–TiC–La2O3 modifier on primary silicon in hypereutectic Al–Si alloys

Author

Hualei Wang, Chengyi Xu, Q.C. Jiang, Hong-Ying Wang, and Y.F. Yang

Subjects
Materials science, Silicon, Mechanical Engineering, Alloy, Metallurgy, Metals and Alloys, chemistry.chemical_element, engineering.material, Brinell scale, chemistry, Mechanics of Materials, Materials Chemistry, engineering, Holding time
Abstract

The effect of La2O3 in the Al–P–Ti–TiC–La2O3 modifier on primary silicon has been investigated. The results show that La2O3 in the Al–P–Ti–TiC–La2O3 modifier play an important role in modifying primary silicon. According to the present experiment, when the modifier containing La2O3 was added to Al–20 wt.% Si alloy at 850 °C, La2O3 in the modifier was decomposed (partly or completely). The minimum primary silicon size (approximately average 18 μm) modified with Al–P–Ti–TiC–La2O3 modifier is obtained at the holding time of 30 min, and the primary silicon size hardly change with the increase in holding time from 30 to 90 min. Primary silicon size (approximately average 150 μm) in unmodified Al–20 wt.% Si alloy is about nine times larger than that (approximately average 18 μm) in modified Al–20 wt.% Si alloy with Al–P–Ti–TiC–La2O3 modifier at the holding time of 30 min. As compared with unmodified Al–20 wt.% Si alloy, the Brinell hardness value of modified Al–20 wt.% Si alloy with Al–P–Ti–TiC–La2O3 modifier at the holding time of 30 min is increased by 39%.

Published
2006
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30. Effect of Nd on primary silicon and eutectic silicon in hypereutectic Al–Si alloy

Author

Q.C. Jiang, Y.F. Yang, Hualei Wang, Chen Xu, and J.G. Wang

Subjects
Materials science, Silicon, Mechanical Engineering, Metallurgy, Alloy, Metals and Alloys, chemistry.chemical_element, engineering.material, Microstructure, chemistry, Mechanics of Materials, Impurity, Materials Chemistry, engineering, Statistical analysis, Crystallite, Eutectic system
Abstract

In the present study, the effect of Nd on primary silicon and eutectic silicon in hypereutectic Al-20 wt.%Si alloy has been investigated. It has been concluded that Nd in Al–P–Ti–TiC–Nd modifier can modify not only eutectic silicon but also primary silicon in hypereutectic Al-20 wt.%Si alloy. Statistical analysis shows that primary and eutectic silicon crystallite sizes (approximately 60 μm and 40 μm in length, respectively) in modified Al-20 wt.%Si alloy with Al–P–Ti–TiC modifier are about seven- and two-times larger than those (approximately 22 μm and 18 μm in length, respectively) in modified Al-20 wt.%Si alloy with Al–P–Ti–TiC–Nd modifier, respectively.

Published
2006
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31. Effect of TiB2/TiC ratio on the microstructure and mechanical properties of high volume fractions of TiB2/TiC reinforced Fe matrix composite

Author

Q.C. Jiang and Y.F. Yang

Subjects
Materials science, Fracture toughness, Flexural strength, Volume (thermodynamics), Vickers hardness test, Composite number, Self-propagating high-temperature synthesis, Sintering, Composite material, Microstructure
Abstract

Dense high volume fractions of different molar TiB2/TiC ratios reinforced Fe matrix composite were successfully fabricated through the SHS reaction assisted with pressure. The reaction mechanisms for three systems were dissolution–precipitation. The TiB2 morphology changed from plate-like to clubbed and further to cubic with decreasing TiB2/TiC ratios from 2:1 to 1:2. The composites with 2:1 and 1:1 ratios of TiB2/TiC have a similar highest Vickers hardness and flexural strength while the composite with 1:1 ratio of TiB2/TiC has the best fracture toughness. The improvement of the fracture toughness was attributed to the reduction of thermal stress and the modification of TiB2 morphology. The optimal ratio of TiB2/TiC was recommended to be 1:1.

Published
2013
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32. High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management

Author

Xiao-Qin Wang, E.S. Yang, Y.F. Yang, C.C. Hsu, and Bei-Ping Yan

Subjects
Power-added efficiency, Materials science, business.industry, Heterojunction bipolar transistor, Bipolar junction transistor, Impedance matching, Heterojunction, Electronic, Optical and Magnetic Materials, Gallium arsenide, chemistry.chemical_compound, chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Common emitter, Voltage
Abstract

High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors (HEBTs) have been demonstrated. The large signal performance of the HEBTs is characterized. Output power of 0.25 W with power added efficiency (PAE) of 63.5% at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 /spl mu/m/sup 2/. Output power of 1.0 W with PAE of 63% has been obtained from the composition of four above-mentioned power cells at the optimum conditions of impedance matching. The thermal performance of HEBT is presented and the results show better thermal management than conventional HBT. The experimental results demonstrate good power performance and capability of HEBTs.

Published
2003
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33. Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors

Author

E.S. Yang, C.C. Hsu, Y.F. Yang, and H.B. Lo

Subjects
Materials science, Heterostructure-emitter bipolar transistor, business.industry, Heterojunction bipolar transistor, Bipolar junction transistor, Thermionic emission, Heterojunction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Electronic, Optical and Magnetic Materials, Physics::Accelerator Physics, Optoelectronics, Electrical and Electronic Engineering, Proximity effect (electromagnetism), business, Temperature coefficient, Common emitter
Abstract

The temperature dependence of the current gain is investigated for GaAs-based heterostructure-emitter bipolar transistors (HEBT's). With the separation of the p-n junction and the heterojunction, the mechanism of hole injection from the base to emitter in the HEBT is different from that of a conventional HBT. Theoretical results demonstrate that the thermionic emission current plays an important role for the hole current which results in a smaller negative or even positive temperature coefficient for the current gain. Experimental data show that the base current for HEBTs is indeed dominated by thermionic emission as predicted. This finding indicates that the HEBT structure is the suitable choice for high power and high speed applications.

Published
2000
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34. Temperature dependence of current gain of GaInP/GaAs heterojunction and heterostructure-emitter bipolar transistors

Author

Y.F. Yang, E.S. Yang, H.B. Lo, Hai-Jiang Ou, and C.C. Hsu

Subjects
Materials science, Heterostructure-emitter bipolar transistor, business.industry, Heterojunction bipolar transistor, Bipolar junction transistor, Heterojunction, Atmospheric temperature range, Electronic, Optical and Magnetic Materials, Optoelectronics, Power semiconductor device, Electrical and Electronic Engineering, business, Temperature coefficient, Common emitter
Abstract

The temperature effect on current gain is presented for GaInP/GaAs heterojunction and heterostructure-emitter bipolar transistors (HBTs and HEBTs). Experimental results showed that the current gain of the HEBT increases with the increase of temperature in the temperature range of 25-125/spl deg/C and decreases slightly at temperatures above 150/spl deg/C. The smaller the collector current, the larger is the positive differential temperature coefficient. At high current levels, the current gain dependence on temperature is significantly reduced. On the other hand, a large negative coefficient is observed in the HBT in all current range. This finding indicates that the HEBT is a better candidate than the HBT for power devices.

Published
1999
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35. Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector

Author

Hai-Jiang Ou, Edward S. Yang, Ta-Chien Huang, C.C. Hsu, and Y.F. Yang

Subjects
Fabrication, Materials science, business.industry, Heterostructure-emitter bipolar transistor, Oscillation, Heterojunction bipolar transistor, Capacitance, Cutoff frequency, Electronic, Optical and Magnetic Materials, Gallium arsenide, chemistry.chemical_compound, chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Layer (electronics)
Abstract

A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) with a selective buried sub-collector has been fabricated by two growth steps. The active HBT region was made on the selective buried sub-collector layer with minimum overlap of the extrinsic base and the sub-collector region resulting in substantial reduction of the base-collector capacitance. The experiment shows that the base-collector capacitance is reduced to about half of that of a conventional HBT while the base resistance remains unchanged resulting in a 40-50% increase in the maximum oscillation frequency. Both DC and RF characteristics are investigated and compared with a conventional HBT. A current gain of 40, cutoff frequency of 50 GHz and maximum oscillation frequency of 140 GHz were obtained for the GaInP/GaAs HBT. It is demonstrated that the selective buried sub-collector provides an effective means for enhancing RF performance of an HBT.

Published
1997
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36. Carbon doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain

Author

Edward S. Yang, C.C. Hsu, and Y.F. Yang

Subjects
Materials science, Differential gain, Input offset voltage, business.industry, Bipolar junction transistor, Analytical chemistry, Double heterostructure, Cutoff frequency, Electronic, Optical and Magnetic Materials, Gallium arsenide, chemistry.chemical_compound, chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Current density, Common emitter
Abstract

Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors (DHEBT's) grown by MOCVD were fabricated. DC current gain of 430 (differential gain of 500) and an offset voltage of 25 mV were obtained. A gain up to 9 was achieved at a low collector current density of 10/sup -3/ A/cm/sup 2/. By using a 600 /spl Aring/ set-back layer in the collector, the saturation (knee) voltage was found to be lower than 2 V at a collector current density of 1/spl times/10/sup 4/ A/cm/sup 2/. A cutoff frequency of 23 GHz and a maximum oscillation frequency of 17.8 GHz were obtained. >

Published
1995
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37. Comparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistors

Author

Y.F. Yang, Edward S. Yang, Y.K. Chen, and Chung-Chi Hsu

Subjects
Materials science, Input offset voltage, business.industry, Heterojunction bipolar transistor, Bipolar junction transistor, Analytical chemistry, Heterojunction, Capacitance, Diffusion capacitance, Electronic, Optical and Magnetic Materials, Optoelectronics, Electrical and Electronic Engineering, business, Current density, Common emitter
Abstract

Carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and heterostructure-emitter bipolar transistors (HEBT's) grown by MOCVD were fabricated. Experimental comparison of HBT's and HEBT's has been made based on the dc and the RF performance. HBT's have higher current gains than those of HEBT's in the high current regime, while HEBT's offer a smaller offset voltage and better uniformity in dc characteristics across the wafer. The current gain and cutoff frequency of the DEBT with a 150 /spl Aring/ emitter set-back layer are comparable to those of HBT's. DC (differential) current gains of 600 (900) and 560 (900) were obtained at a collector current density of 2.5/spl times/10/sup 4/ A/cm/sup 2/ for the HBT and HEBT, respectively. The cutoff frequencies are 37 and 31 GHz for the HBT and HEBT, respectively. It is shown that there is negligible contribution of the diffusion capacitance to the emitter capacitance in HEBT's with a thin emitter set-back layer but not with a thick emitter set-back layer. The behavior of HEBT's both in dc and RF characteristics is similar to that of HBT's. >

Published
1995
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38. Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors

Author

Edward S. Yang, Y.F. Yang, and C.C. Hsu

Subjects
Materials science, Passivation, business.industry, Heterojunction bipolar transistor, Bipolar junction transistor, Heterojunction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Electronic, Optical and Magnetic Materials, Gallium arsenide, Condensed Matter::Materials Science, chemistry.chemical_compound, chemistry, Optoelectronics, Electrical and Electronic Engineering, Electric current, Current (fluid), business, Common emitter
Abstract

The behavior of the surface recombination current was examined in InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT's) with both exposed GaAs surface and InGaP passivated surface based on the emitter-size effect on current gain. The results indicate that the GaAs surface recombination current has a 1 kT-like dependence in the high current regime and a 2 kT-like dependence in the low current regime which is similar to published experimental results in AlGaAs/GaAs and InGaP/GaAs HBT's. The surface recombination current in devices with an InGaP passivation layer has an order of magnitude lower value in low current regime and more than two orders lower in high current regime than that in devices with exposed GaAs surface. >

Published
1994
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39. Effects of deposition conditions on stoichiometry of off-axis RF sputtered BiSrCaCuO thin films

Author

Y.F. Yang, James E. Nordman, and Ji Ung Lee

Subjects
Materials science, Analytical chemistry, chemistry.chemical_element, Substrate (electronics), Partial pressure, Sputter deposition, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Bismuth, chemistry, Sputtering, Electrical and Electronic Engineering, Thin film, Deposition (law), Stoichiometry
Abstract

The composition of as-grown BiSrCaCuO superconducting thin films has been investigated as a function of the RF magnetron sputtering variables, i.e. total sputtering pressure, substrate temperature, and oxygen partial pressure in an off-axis configuration. This study shows that use of off-axis geometry alone is insufficient to completely overcome the resputtering problem due to energetic particle bombardment on the substrate. The bismuth loss in the sputtered films at low sputtering pressure and copper loss at high pressure, both of which were aggravated at increasing temperatures, were observed. The mechanisms of thermally enhanced resputtering and gas scattering effects at high pressure are proposed to interpret the discrepancy between target and film composition. >

Published
1993
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40. Characteristics of junctions made between Pb and Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub 8+x

Author

Y.F. Yang and James E. Nordman

Subjects
X-ray spectroscopy, Materials science, High-temperature superconductivity, Photoemission spectroscopy, Supercurrent, Analytical chemistry, Electronic, Optical and Magnetic Materials, law.invention, Sputtering, law, Crystallite, Electrical and Electronic Engineering, Spectroscopy, Surface finishing
Abstract

Investigations of the junctions made between Pb and polycrystalline Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub 8+x/ (BSCCO) are reported. The BSCCO surfaces were treated with a number of methods, including mechanical scraping, plasma sputtering, plasma oxidation, and Br etch, before junctions were fabricated. The current-voltage characteristics and dynamic resistance (dV/dI) vs. voltage were measured at both 77 K and 4.2 K. The authors observed a Pb gap structure similar to that seen in Pb/YBa/sub 2/Cu/sub 3/O/sub 7- delta / junctions, a magnetic-dependent supercurrent, an asymmetric I-V curve, and narrow resistance peaks. Properties of junctions prepared in different manners are compared. Both X-ray photoemission spectroscopy and electrical studies indicated that Br etch is not suitable for the BiSrCaCuO system in spite of its successful application in YBa/sub 2/Cu/sub 3/O/sub 7- delta /.

Published
1991
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41. Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor

Author

H. B. Lo, Edward S. Yang, and Y.F. Yang

Subjects
Materials science, Physics and Astronomy (miscellaneous), Heterostructure-emitter bipolar transistor, business.industry, Heterojunction bipolar transistor, Bipolar junction transistor, Thermionic emission, Substrate (electronics), Gallium arsenide, Algaas gaas, chemistry.chemical_compound, chemistry, Optoelectronics, Current (fluid), business
Abstract

The temperature effect on current gains is presented for an AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT). Experimental results show that the HEBT has much less temperature sensitivity in current gain than a heterojunction bipolar transistor. The current gains for the HEBT are almost constant with the substrate temperature at a high current regime. This indicates that the HEBT could be a good candidate for power applications.

Published
1999
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42. Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

Author

Y.F. Yang, Edward S. Yang, H. B. Lo, H. J. Ou, and Cheng-Chih Hsu

Subjects
Materials science, Physics and Astronomy (miscellaneous), business.industry, Doping, Inorganic chemistry, Bipolar junction transistor, chemistry.chemical_element, Heterojunction, Chemical vapor deposition, Nitrogen, Gallium arsenide, chemistry.chemical_compound, chemistry, Optoelectronics, Metalorganic vapour phase epitaxy, business, Carbon
Abstract

The use of nitrogen as the carrier gas in metalorganic chemical vapor deposition (MOCVD) for the growth of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) is reported. The material quality grown using a nitrogen carrier gas is the same as that of using a hydrogen carrier gas. High carbon doping and hole concentrations of 3×1020 and 2×1020 cm−3 in GaAs were obtained. The fabricated HBTs showed very good DC and RF performances indicating that nitrogen can be a promising carrier gas for MOCVD growth.

Published
1997
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43. A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector

Author

Edward S. Yang, Y.F. Yang, C.C. Hsu, and Hai-Jiang Ou

Subjects
Materials science, business.industry, Heterostructure-emitter bipolar transistor, Heterojunction bipolar transistor, Microwave bipolar transistors, Capacitance, Electronic, Optical and Magnetic Materials, Gallium arsenide, chemistry.chemical_compound, chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Base (exponentiation)
Abstract

A C-doped GaInP/GaAs HBT using a selective buried sub-collector has been fabricated by two growth steps. The device was fabricated with minimum overlap of the extrinsic base and the sub-collector region to reduce base-collector capacitance. The experiment shows that the base collector capacitance is reduced to about half of that of an HBT without selective buried sub-collector while the base resistance remains unchanged. A current gain of 35, f/sub T/ of 50 GHz and f/sub max/ of 140 GHz are obtained with this technology.

Published
1996
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44. Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing

Author

Y.F. Yang, E. S. Yang, and D. Tchikatilov

Subjects
chemistry.chemical_compound, Materials science, Physics and Astronomy (miscellaneous), Dielectric strength, chemistry, Annealing (metallurgy), Oxide, Analytical chemistry, Charge density, Dielectric, Thin film, Forming gas, Electron cyclotron resonance
Abstract

The influence of low‐temperature annealing in H2O vapor on electron‐cyclotron‐resonance (ECR) grown SiGe oxides is reported. Annealing the oxides in H2O vapor at 280 °C for 3 h 20 min, applied after annealing in forming gas at 450 °C for 30 min, has several important effects: It reduces oxide leakage current by up to four orders of magnitude, decreases the density of interface states, and results in a low fixed oxide charge density of −5.0×1010 cm−2 in comparison to those of the films subjected to annealing in forming gas only. In addition, higher cumulative dielectric breakdown fields up to 8 MV/cm have been achieved. From the results obtained it is evident that vapor annealing is beneficial for ECR‐grown SiGe oxides.

Published
1996
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45. Integration of GalnP/GaAs heterojunction bipolar transistors and high electron mobility transistors

Author

C.C. Hsu, Edward S. Yang, and Y.F. Yang

Subjects
Materials science, business.industry, Transconductance, Heterojunction bipolar transistor, Bipolar junction transistor, Heterojunction, High-electron-mobility transistor, Cutoff frequency, Electronic, Optical and Magnetic Materials, Gallium arsenide, chemistry.chemical_compound, chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Monolithic microwave integrated circuit
Abstract

Integration of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) is demonstrated by growing an HBT on the top of a HEMT. A current gain of 60, a cutoff frequency of 59 GHz and a maximum oscillation frequency of 68 GHz were obtained for a 5/spl times/15 /spl mu/m/sup 2/ self-aligned HBT. The HEMT, with a gate length of 1.5 /spl mu/m has a transconductance of 210 mS/mm, a cutoff frequency of 9 GHz and a maximum oscillation frequency of 22 GHz. It is shown that the GaInP/GaAs HBT on the HEMT is a simple Bi-FET technology suitable for microwave and mixed signal applications.

Published
1996
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46. State holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes

Author

W.I. Wang, Y.F. Yang, and E.S. Yang

Subjects
Materials science, business.industry, Negative resistance, Heterojunction bipolar transistor, Bipolar junction transistor, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit, law.invention, law, Hardware_INTEGRATEDCIRCUITS, Tunnel diode, Optoelectronics, Hardware_ARITHMETICANDLOGICSTRUCTURES, Electrical and Electronic Engineering, business, Hardware_LOGICDESIGN, Molecular beam epitaxy, Electronic circuit, Diode
Abstract

A state holding circuit, similar to the Muller C-element used as a latch, a register or a counter, has been successfully fabricated using GaAs/AlGaAs heterostructures grown by molecular beam epitaxy (MBE). Using the negative resistance in a resonant tunnel diode, the circuit has a simpler configuration than the C-element and the potential for use in high speed circuits.

Published
1994
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48. CCl4‐doped semi‐insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors

Author

Y.F. Yang, Edward S. Yang, Cheng-Chih Hsu, and H. J. Ou

Subjects
Materials science, Physics and Astronomy (miscellaneous), business.industry, Oscillation, Transistor, Doping, High-electron-mobility transistor, Chemical vapor deposition, Cutoff frequency, law.invention, law, Optoelectronics, Field-effect transistor, business, Layer (electronics)
Abstract

The application of CCl4‐doped semi‐insulating InP as a buffer layer in a pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor (HEMT) grown by metalorganic chemical vapor deposition is reported. This Al‐free InP‐base HEMT with a gate length of 1.3 μm has extrinsic transconductances of 420 and 610 mS/mm at 300 and 77 K, respectively. A cutoff frequency of 15 GHz and a maximum oscillation frequency of 40 GHz are obtained. The results demonstrate the CCl4‐doped semi‐insulating InP is a promising buffer layer for InP‐based HEMT.

Published
1996
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49. Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA

Author

C.C. Hsu, Y.F. Yang, and E.S. Yang

Subjects
chemistry.chemical_compound, Materials science, chemistry, business.industry, Material quality, Gate length, Optoelectronics, Metalorganic vapour phase epitaxy, High-electron-mobility transistor, Electrical and Electronic Engineering, business, Gallium arsenide
Abstract

A pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor grown by MOVPE using TBP and TBA is reported for the first time. The extrinsic transconductances of 480 and 620 mS/mm with the maximum output current of 660 and 780 mA/mm were achieved for the 1.2 µm gate length device at 300 and 77 K, respectively. These data are comparable to those of AlInAs/GaInAs HEMTs grown by MOVPE and MBE indicating the good material quality.

Published
1994
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50. InGaP/GaAs power heterostructure-emitter bipolar transistor

Author

Bryan Ping-Yen Yan, E.S. Yang, Y.F. Yang, Xiaogang Wang, and C.C. Hsu

Subjects
Power-added efficiency, Materials science, business.industry, Heterostructure-emitter bipolar transistor, Heterojunction bipolar transistor, Bipolar junction transistor, Optoelectronics, Continuous wave, Power semiconductor device, Electrical and Electronic Engineering, business, Microwave, Common emitter
Abstract

The first microwave large-signal power results measured from InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT) are reported. A continuous wave output power of 0.25 W with power added efficiency of 63.5%, at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 /spl mu/m/sup 2/. The experimental results demonstrate the excellent power performance and capability of HEBTs.

Published
2001
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