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Funding Information: This work was supported by the European Commission (H2020, 1D-NEON, grant agreement ID: 685758). J.M.K. and L.G.O. acknowledge the support from the U.K. Research and Innovation (EPSRC, EP/P027628/1). We thank Y. Bernstein and J. Faulkner for helping with grammar check. Funding Information: Acknowledgments Funding:ThisworkwassupportedbytheEuropeanCommission(H2020,1D-NEON,grant agreementID:685758).J.M.K.andL.G.O.acknowledgethesupportfromtheU.K.Researchand Innovation(EPSRC,EP/P027628/1).W ethankY .BernsteinandJ.Faulknerforhelpingwith grammarcheck.Authorcontributions:S.L.andJ.M.K.conceivedtheproject.S.L.,L.G.O.,P .B., R.Martins,andJ.M.K.supervisedtheproject.S.L.andH.L.developedF-PD.S.L.,Y .-W .L., G.-H.A., D.-W .S., J.I.S.,andS.C.developedF-SC.C.L.F ., A.S.,R.I.,P .B., andR.Martinsdevelopedfiber transistor.S.L.,H.L.,andS.C.developedF-LED.ThefiberdeviceswereevaluatedbyS.L.,H.W .C., D.-W .S., H.L.,S.J.,S.D.H.,S.Y .B., S.Z.,W .H.-C., Y .-H.S., X.-B.F ., T .H.L., J.-W .J., andY .K. The developmentofweavingprocesswasconductedbyS.L.,H.W .C., F .M.M., P .J., andV .G.C. Thelaser interconnectionwasdevelopedbyS.L.,H.W .C., K.U.,M.E.,andM.S.Thetextiledemonstrations werecharacterizedbyS.L.,H.W .C., D.-W .S., J.Y ., S.S.,U.E.,S.N.,A.C.,A.M.,R.Momentè,J.G.,N.D., S.M.,C.-H.K.,M.L.,A.N.,D.J.,M.C.,andY .C. ThismanuscriptwaswrittenbyS.L.andJ.M.K.and reviewed by H.W .C., D.-W .S., M.C.,L.G.O., P .B., E.F ., and G.A.J.A. All authors discussed the results andcommentedonthemanuscript.Competinginterests:Theauthorsdeclarethattheyhave nocompetinginterests.Dataandmaterialsavailability:Alldataneededtoevaluatethe conclusionsinthepaperarepresentinthepaperand/ortheSupplementaryMaterials. Publisher Copyright: Copyright © 2023 The Authors, some rights reserved. An integrated textile electronic system is reported here, enabling a truly free form factor system via textile manufacturing integration of fiber-based electronic components. Intelligent and smart systems require freedom of form factor, unrestricted design, and unlimited scale. Initial attempts to develop conductive fibers and textile electronics failed to achieve reliable integration and performance required for industrial-scale manufacturing of technical textiles by standard weaving technologies. Here, we present a textile electronic system with functional one-dimensional devices, including fiber photodetectors (as an input device), fiber supercapacitors (as an energy storage device), fiber field-effect transistors (as an electronic driving device), and fiber quantum dot light-emitting diodes (as an output device). As a proof of concept applicable to smart homes, a textile electronic system composed of multiple functional fiber components is demonstrated, enabling luminance modulation and letter indication depending on sunlight intensity. publishersversion published

Large-scale printed InP RGB quantum dot (QD) light emitting diodes (QLEDs) are realised by an air-processable and stable ink with a photoinitiator (PI) mediating cross-linkage between eco-friendly QDs for next generation self-emissive display.

Funder: Royal Society Wolfson Merit Award, Smart textiles consist of discrete devices fabricated from-or incorporated onto-fibres. Despite the tremendous progress in smart textiles for lighting/display applications, a large scale approach for a smart display system with integrated multifunctional devices in traditional textile platforms has yet to be demonstrated. Here we report the realisation of a fully operational 46-inch smart textile lighting/display system consisting of RGB fibrous LEDs coupled with multifunctional fibre devices that are capable of wireless power transmission, touch sensing, photodetection, environmental/biosignal monitoring, and energy storage. The smart textile display system exhibits full freedom of form factors, including flexibility, bendability, and rollability as a vivid RGB lighting/grey-level-controlled full colour display apparatus with embedded fibre devices that are configured to provide external stimuli detection. Our systematic design and integration strategies are transformational and provide the foundation for realising highly functional smart lighting/display textiles over large area for revolutionary applications on smart homes and internet of things (IoT)., EU H2020, 1D-NEON, Grant agreement ID:685758 EPSRC, EP/P027628/1

sQuantum dot light-emitting diodes (QD-LEDs) are considered as competitive candidate for next-generation displays or lightings. Recent advances in the synthesis of core/shell quantum dots (QDs) and tailoring procedures for achieving their high quantum yield have facilitated the emergence of high-performance QD-LEDs. Meanwhile, the charge-carrier dynamics in QD-LED devices, which constitutes the remaining core research area for further improvement of QD-LEDs, is, however, poorly understood yet. Here, we propose a charge transport model in which the charge-carrier dynamics in QD-LEDs are comprehensively described by computer simulations. The charge-carrier injection is modelled by the carrier-capturing process, while the effect of electric fields at their interfaces is considered. The simulated electro-optical characteristics of QD-LEDs, such as the luminance, current density and external quantum efficiency (EQE) curves with varying voltages, show excellent agreement with experiments. Therefore, our computational method proposed here provides a useful means for designing and optimising high-performance QD-LED devices.

Quantum dot light-emitting diodes (QD-LEDs) are widely recognised as great alternatives to organic light-emitting diodes (OLEDs) due to their enhanced performances. This focus article surveys the current progress on the state-of-the-art QD-LED technology including material synthesis, device optimization and innovative fabrication processes. A discussion on the material synthesis of core nanocrystals, shell layers and surface-binding ligands is presented for high photoluminescence quantum yield (PLQY) quantum dots (QDs) using heavy-metal free materials. The operational principles of several types of QD-LED device architectures are also covered, and the recent evolution of device engineering technologies is investigated. By exploring the fabrication process for pixel-patterning of QD-LEDs on an active-matrix backplane for full-colour display applications, we anticipate further improvement in device performance for the commercialisation of next-generation displays.

We report on the design, fabrication, and characterization of heterostructure In-Zn-O (IZO) thin-film transistors (TFTs) with improved performance characteristics and robust operation. The heterostructure layer is fabricated by stacking a solution-processed IZO film on top of a buffer layer, which is deposited previously using an electron beam (e-beam) evaporator. A thin buffer layer at the dielectric interface can help to template the structure of the channel. The control of the precursors and of the solvent used during the sol-gel process can help lower the temperature needed for the sol-gel condensation reaction to proceed cleanly. This boosts the overall performance of the device with a significantly reduced subthreshold swing, a four-fold mobility increase, and a two-order of magnitude larger on/off ratio. Atomistic simulations of the a-IZO structure using molecular dynamics (both classical and ab initio) and hybrid density functional theory (DFT) calculations of the electronic structure reveal the potential atomic origin of these effects.

Wavelength-selective harvesting by organic solar cells (OSCs) has attracted significant research attention due to the unique potential of these materials for smart photovoltaic window applications. Here, a visibly transparent OSC is demonstrated by utilizing both near-infrared (NIR)-absorbing polymer donor and nonfullerene acceptor (NFA) materials with narrow optical band gaps of less than 1.4 eV. Despite the substantial overlap in absorption spectra between the donor and acceptor, sufficient lowest unoccupied molecular orbital (LUMO) and highest occupied molecule orbital (HOMO) energy offsets for efficient charge separation with concurrent very low voltage losses yield a power conversion efficiency (PCE) of 9.13%. Moreover, with the introduction of an ultrathin Ag film (8 nm) as a transparent top electrode, semitransparent OSCs exhibit an excellent dual-side photovoltaic performance of 5.7 and 3.9% under bottom and top illumination, respectively, with high transmittance reaching 60% at wavelengths from 400 to 600 nm. This approach is expected to provide a new perspective in developing the highly efficient and transparent OSCs.

A simulation model of electrical percolation through a three-dimensional network of curved CNTs is developed in order to analyze the electromechanical properties of a highly stretchable fiber strain sensor made of a CNT/polymer composite. Rigid-body movement of the curved CNTs within the polymer matrix is described analytically. Random arrangements of CNTs within the composite are generated by a Monte-Carlo simulation method and a union-find algorithm is utilized to investigate the network percolation. Consequently, the strain-induced resistance change curves are obtained in a wide strain range of the composite. In order to compare our model with experimental results, two CNT/polymer composite fibers were fabricated and tested as strain sensors. Their effective CNT volume fractions are estimated by comparing the experimental data with our simulation model. The results confirm that the proposed simulation model reproduces well the experimental data and is useful for predicting and optimizing the electromechanical characteristics of highly stretchable fiber strain sensors based on CNT/polymer composites.

InP quantum dots (QDs) are nontoxic emitters, which are considered an alternative to CdSe-based QDs. However, the limited choice and high cost of P precursors have a negative impact on their practical applicability. In this work, we report the large-scale synthesis of highly luminescent InP@ZnS QDs from an elemental P precursor (P4), which was simply synthesized via the sublimation of red P powder. The size of the InP QDs was controlled by varying the reaction parameters such as the reaction time and temperature, and the type of In precursors. This way, the photoluminescence properties of the synthesized InP@ZnS QDs could be easily tuned across the entire visible range, while their quantum yield could be increased up to 60% via the optimization of reaction conditions. Furthermore, possible reaction pathways for the formation of InP QDs using the P4 precursor have been investigated with nuclear magnetic resonance spectroscopy and it was demonstrated that the direct reaction of P4 precursor with In precurso...

Technologies for micro-to-nanometer patterns of solution-based materials (SBMs) contribute to a wide range of practical applications in the fields of electronics and optoelectronics. Here, state-of-the-art micro-to-nanometer scale patterning technologies of SBMs are disseminated. The utilisation of patterning for a wide-range of SBMs leads to a high level of control over conventional solution-based film fabrication processes that are not easily accessible for the control and fabrication of ordered micro-to-nanometer patterns. In this review, various patterning procedures of SBMs, including modified photolithography, direct-contact patterning, and inkjet printing, are briefly introduced with several strategies for reducing their pattern size to enhance the electronic and optoelectronic properties of SBMs explained. We then conclude with comments on future research directions in the field.

The development of flexible displays for wearable electronics applications has created demand for high-performance quantum dot (QD) light-emitting diodes (QLEDs) based on QD core@shell structures. Emerging indium phosphide (InP)-based core@shell QDs show promise as lighting material in the field of optoelectronics because they are environmentally friendly material, can be produced in a cost-effective manner, and are capable of tunable emission. While efforts have been made to enhance the performance of InP-based QLED, the stabilities of InP@ZnSeS QDs film and InP@ZnSeS-based QLED in water/air are not yet fully understood, limiting their practical applications. Herein, a highly durable, flexible InP@ZnSeS QLED encapsulated in an ultrathin film of CYTOP, a solution-based amorphous fluoropolymer, is demonstrated. The CYTOP-encapsulated green flexible QLED shows an external quantum efficiency (EQE) of 0.904% and a high luminescence of 1593 cd/m2 as well as outstanding waterproof performance. The flexible device emits strong luminescence after being immersed in water for ~20 minutes. Even when subjected to continuous tensile stress with a 5 mm bending radius, the high luminescence is preserved. This waterproof architecture can be a promising strategy for wearable electronics applications.