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This article suggests an increased, minimal 4-bit scaling factor based on FinFET. The HSPICE instrument is used to evaluate the multipliers premised on FinFETs. FinFETs are observed to consume 97% less strength than MOSFETs. Numerous condensers are proposed and built at 180nm innovation in this document, including 5:3, 10:4, 15:4, as well as 20:5 compressors. Further on, FinFET technology had been used to make the compressor There is also a comparison between delay and average power of 4-bit FINFET and 4-bit MOSFET. The delay and Power consumption for 4-bit Fin-FET by using AND gate and EX-OR gate are 0.139 ns, 0.54 μW, and 0.245ns, 1.975μW respectively. Both technologies’ concepts were simulated and their functionality compared. Thus, according to simulations, the compressors built in FinFET technology would work on less power than the conventional CMOS technology.

Sense amplifier is a key element of memory and a CMOS-based spin hybrid circuit. Magnetic tunnel junction (MTJ) is a key spintronic device used in spin-based memory and hybrid circuits. This paper presents a design of a voltage-controlled magnetic anisotropy MTJ-based sense amplifier (VCMA-SA) that offers better reliability, power efficiency and high-speed performance. MTJ switching between different resistive states in this paper takes place through the faster and energy-efficient voltage-controlled magnetic anisotropy (VCMA) scheme rather than the traditional spin-transfer torque (STT)-based magnetization switching. This paper demonstrates that SA based on VCMA-MTJ switching is faster, reliable and more energy-efficient compared with iPMA-based STT switching.

Unintentional shutdown of power in CMOS circuitry leads to loss of data. The usage of non-volatile elements along with CMOS to improve its performance in terms of power consumption, area, and delay is very attractive. Non-volatile elements act as a backup data source for CMOS circuitry. Current-induced domain-wall (DW) motion is a prominent switching mechanism promising low-power, high-density, and high-speed circuits. This paper presents a novel DW motion and pre-charge sense amplifier-based magnetic flash analog-to-digital converter (ADC), which is faster, and power and area efficient compared with other CMOS ADCs. By using a DW motion in a magnetic stripe SPICE compatible Verilog-A model and CMOS 45 nm design kit, its performance, such as power and delay, has been simulated and compared with CMOS-based ADCs.