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Like ABX3 halide perovskites, A3YX antiperovskites also have high symmetry and high electronic dimensionality and thus are expected to hold the promise of producing excellent optoelectronic properties. In this work, we explore the optoelectronic-relevant properties of oxyhalide and chalcohalide antiperovskites A3YX through a combination of density functional theory calculations, chemical synthesis, and material characterizations, with a particular focus on bandgap engineering and thermodynamic stability. It is found that the conduction band minimum and valence band maximum of these antiperovskites are contributed mainly by the cations at the octahedral corners and the anions at the octahedral centers, respectively. In contrast, the halogen anions at the cuboctahedral voids contribute little to the band edges. As a result, element substitutions at the octahedral corners and centers can effectively engineer the bandgaps, whereas those at the cuboctahedral voids have limited influence on the bandgap. Further, it is found that the thermodynamic stability of these antiperovskites depends strongly on the constituent ions, e.g., the thermodynamic stability decreases significantly as the Y anion changes from O to S and Se. Our results provide critical insights into the bandgap properties and thermodynamic stability of A3YX oxyhalide and chalcohalide antiperovskites for potential optoelectronic applications.

Genome‐wide 5hmC profiling in cell‐free DNA acquired from CRC patients, adenoma patients, and healthy individuals revealed that the differential 5hmC‐modified regions were gathered into four clusters with no overlap, although there are a few overlapped genes shared between the different clusters. CRC patients with adenoma history showed exclusive 5hmC‐gain characteristics, which was consistent with the ‘parallel’ evolution hypothesis in adenoma., Approximately 85% colorectal cancers (CRCs) are thought to evolve through the adenoma‐to‐carcinoma sequence associated with specific molecular alterations, including the 5‐hydroxymethylcytosine (5hmC) signature in circulating cell‐free DNA (cfDNA). To explore colorectal disease progression and evaluate the use of cfDNA as a potential diagnostic factor for CRC screening, here, we performed genome‐wide 5hmC profiling in plasma cfDNA and tissue genomic DNA (gDNA) acquired from 101 samples (63 plasma and 38 tissues), collected from 21 early‐stage CRC patients, 21 AD patients, and 21 healthy controls (HC). The gDNA and cfDNA 5hmC signatures identified in gene bodies and promoter regions in CRC and AD groups were compared with those in HC group. All the differential 5hmC‐modified regions (DhMRs) were gathered into four clusters: Disease‐enriched, AD‐enriched, Disease‐lost, and AD‐lost, with no overlap. AD‐related clusters, AD‐enriched and AD‐lost, displayed the unique 5hmC signals in AD patients. Disease‐enriched and Disease‐lost clusters indicated the general 5hmC changes when colorectal lesions occurred. Cancer patients with a confirmable adenoma history segmentally gathered in AD‐enriched clusters. KEGG functional enrichment and GO analyses determined distinct differential 5hmC‐modified profiles in cfDNA of HC individuals, AD, and CRC patients. All patients had comprehensive 5hmC signatures where Disease‐enriched and Disease‐lost DhMR clusters demonstrated similar epigenetic modifications, while AD‐enriched and AD‐lost DhMR clusters indicated complicated subpopulations in adenoma. Analysis of CRC patients with adenoma history showed exclusive 5hmC‐gain characteristics, consistent with the ‘parallel’ evolution hypothesis in adenoma, either developed through the adenoma‐to‐carcinoma sequence or not. These findings deepen our understanding of colorectal disease and suggest that the 5hmC modifications of different pathological subtypes (cancer patients with or without adenoma history) could be used to screen early‐stage CRC and assess adenoma malignancy with large‐scale follow‐up studies in the future.

Interlayer electronic coupling in two-dimensional materials enables tunable and emergent properties by stacking engineering. However, it also results in significant evolution of electronic structures and attenuation of excitonic effects in two-dimensional semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayers are stacked into van der Waals structures. Here we report a van der Waals crystal, niobium oxide dichloride (NbOCl

Single-atom catalysts (SACs) have attracted significant attention because they exhibit unique catalytic performance due to their ideal structure. However, maintaining atomically dispersed metal under high temperature, while achieving high catalytic activity remains a formidable challenge. In this work, we stabilize single platinum atoms within sub-nanometer surface cavities in well-defined 12CaO·7Al2O3 (C12A7) crystals through theoretical prediction and experimental process. This approach utilizes the interaction of isolated metal anions with the positively charged surface cavities of C12A7, which allows for severe reduction conditions up to 600 °C. The resulting catalyst is stable and highly active toward the selective hydrogenation of nitroarenes with a much higher turnover frequency (up to 25772 h−1) than well-studied Pt-based catalysts. The high activity and selectivity result from the formation of stable trapped single Pt atoms, which leads to heterolytic cleavage of hydrogen molecules in a reaction that involves the nitro group being selectively adsorbed on C12A7 surface., Stabilize the active metal single atoms under harsh conditions is critical for the development of single atom catalysts. Here the authors report a nanoporous crystal, 12CaO·7Al2O3, that can firmly stabilize Pt single atoms in its surface cavities for efficient catalytic hydrogenation of nitroarenes.

Suzuki cross-coupling reactions catalyzed by palladium are powerful tools for the synthesis of functional organic compounds. Excellent catalytic activity and stability require negatively charged Pd species and the avoidance of metal leaching or clustering in a heterogeneous system. Here we report a Pd-based electride material, Y3Pd2, in which active Pd atoms are incorporated in a lattice together with Y. As evidenced from detailed characterization and density functional theory (DFT) calculations, Y3Pd2 realizes negatively charged Pd species, a low work function and a high carrier density, which are expected to be beneficial for the efficient Suzuki coupling reaction of activated aryl halides with various coupling partners under mild conditions. The catalytic activity of Y3Pd2 is ten times higher than that of pure Pd and the activation energy is lower by nearly 35%. The Y3Pd2 intermetallic electride catalyst also exhibited extremely good catalytic stability during long-term coupling reactions., In Suzuki coupling reactions, excellent catalytic performance require negatively charged Pd species and the avoidance of metal leaching or clustering. Here the authors implanted Pd sites into an intermetallic electride, Y3Pd2, which serves as an efficient and stable catalyst for Suzuki coupling reactions.

Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant Cs2SnCl6:xSb is designed and synthesized. The perovskite variant Cs2SnCl6:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of Cs2SnCl6:xSb is caused by the ionoluminescence of Sb3+ within Cs2SnCl6 matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders Cs2SnCl6:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling Cs2SnCl6:0.59%Sb, Cs2SnCl6:2.75%Bi and Ba2Sr2SiO4: Eu2+ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81.

Summary Practical application of hybrid Pb-based halide perovskites needs not only to fabricate high-quality film samples on a large scale but also to properly overcome the issues of Pb toxicity and materials instability. Finding new, stable, Pb-free perovskites currently attracts significant research interest. Among various strategies, hetero-substitution of Pb to form quaternary halide double perovskites represents a promising direction to keep the high structural (and likely electronic) dimensionality nature of perovskite lattice and meanwhile offers rich chemical compositions a degree of freedom for discovering new perovskite materials. We herein present a perspective that concisely reviews the progress of rational design of Pb-free halide double perovskites by both theoretical and experimental efforts as well as their current and potential applications in various optoelectronic categories. We also envision the future research directions to realize new materials by exploring broader chemical composition space and to better utilize existing materials by considering optoelectronic properties modulation.

Manipulating the orbital hybridization between the metal cation and the halide anion to achieve novel properties is highly desired. Here, we present an orbital engineering strategy to construct two-dimensional (2D) electronic structures in three-dimensional (3D) halide perovskites by rationally controlling the hybridization between the d orbitals of the metal cations and the halide p orbitals. Taking Cs2Au(I)Au(III)I6 as an example, we demonstrate that the flat conduction band and valence band at the band edges can be achieved simultaneously by combining two metal cations with different d orbital configurations using first-principles calculations. The band structure and predicted carrier mobilities show huge anisotropy along in-plane and out-of-plane directions, confirming the 2D electronic properties. In addition, the strong anisotropic optical and mechanical properties (e.g., 2D-like properties) are also presented. Our work provides orbital engineering guidance for achieving low-dimensional properties with strong anisotropy in 3D halide perovskites for novel electronic and photonic applications.

The bandgap is the most important physical property that determines the potential of semiconductors for photovoltaic (PV) applications. This Minireview discusses the parameters affecting the bandgap of perovskite semiconductors that are being widely studied for PV applications, and the recent progress in the optimization of the bandgaps of these materials. Perspectives are also provided for guiding future research in this area.

Although metal halide double perovskites A2B(I)B(III)X6 are expected as nontoxic alternatives for lead halide perovskites, recent studies have shown that only Tl(I)–Bi(III) and In(I)–Bi(III) bromides are thermodynamically stable and possess optoelectronic properties suitable for photovoltaic absorbers. Here, we show, through density functional theory calculations, that Tl–Bi and In–Bi bromide double perovskites exhibit significantly different semiconducting behaviors due to the different energy levels of the highest-occupied pseudoclosed s2 orbitals of Tl(I) and In(I). While Tl–Bi double perovskites can exhibit semiconducting p-type properties, In–Bi bromide double perovskites exhibit metallic p-type ones regardless of the synthesis condition due to the extremely low formation energy of In vacancy. Such difference makes Tl–Bi bromide double perovskites suitable for optoelectronic applications, but not In–Bi bromide double perovskites. Furthermore, there is a high probability for In to substitute a Bi site...

Efficient and stable parallel perovskite solar module is achieved by slot-die coating., Perovskite solar cells have emerged as one of the most promising thin-film photovoltaic (PV) technologies and have made a strong debut in the PV field. However, they still face difficulties with up-scaling to module-level devices and long-term stability issue. Here, we report the use of a room-temperature nonvolatile Lewis base additive, diphenyl sulfoxide(DPSO), in formamidinium-cesium (FACs) perovskite precursor solution to enhance the nucleation barrier and stabilize the wet precursor film for the scalable fabrication of uniform, large-area FACs perovskite films. With a parallel-interconnected module design, the resultant solar module realized a certified quasi-stabilized efficiency of 16.63% with an active area of 20.77 cm2. The encapsulated modules maintained 97 and 95% of their initial efficiencies after 10,000 and 1187 hours under day/night cycling and 1-sun equivalent white-light light-emitting diode array illumination with maximum power point tracking at 50°C, respectively.

Recently, CuI - and AgI -based halide double perovskites have been proposed as promising candidates for overcoming the toxicity and instability issues inherent within the emerging Pb-based halide perovskite absorbers. However, up to date, only AgI -based halide double perovskites have been experimentally synthesized; there are no reports on successful synthesis of CuI -based analogues. Here we show that, owing to the much higher energy level for the Cu 3d10 orbitals than for the Ag 4d10 orbitals, CuI atoms energetically favor 4-fold coordination, forming [CuX4 ] tetrahedra (X=halogen), but not 6-fold coordination as required for [CuX6 ] octahedra. In contrast, AgI atoms can have both 6- and 4-fold coordinations. Our density functional theory calculations reveal that the synthesis of CuI halide double perovskites may instead lead to non-perovskites containing [CuX4 ] tetrahedra, as confirmed by our material synthesis efforts.

Searching for promising nontoxic and air-stable perovskite absorbers for solar cell applications has drawn extensive attention. Here, we show that a promising perovskite absorber should exhibit a high electronic dimensionality. Semiconductors that exhibit a high structural dimensionality, but a low electronic dimensionality have less promise as an absorber, because of barriers to isotropic current flow, enhanced electron/hole effective masses and fundamentally deeper defect states (more effective at causing recombination). Our concept accounts for the device performance of the perovskite-based solar cells reported in literature so far.

Thin-film Cu(In,Ga)Se2 and CdTe solar cells have demonstrated high power conversion efficiencies, but they cannot provide a sustainable clean energy pathway because of the scarcity of Te and In. Here, we propose a distant-atom concept to mutate In by a group II element (Ba) and a group IV element (Sn) that are at rather different locations on the periodic table. Because of the very different electronic properties between the cations, the resultant earth-abundant orthorhombic Cu2BaSnSe4 absorber does not have the detrimental cation–cation disorder issue seen in the earth-abundant kesterite Cu2ZnSnSe4 absorber. We anticipate that Cu2BaSnSe4 solar cells should not have large open-circuit voltage deficits as seen in CuZnSnSe4 solar cells. Density functional theory calculation of the electronic and defect properties of Cu2BaSnSe4 confirms these expectations.

Synthesis of cubic-phase AgBi2I7 iodobismuthate thin films and fabrication of air-stable Pb-free solar cells using the AgBi2I7 absorber have recently been reported. On the basis of X-ray diffraction (XRD) analysis and nominal composition, it was suggested that the synthesized films have a cubic ThZr2H7 crystal structure with AgBi2I7 stoichiometry. Through careful examination of the proposed structure and computational evaluation of the phase stability and bandgap, we find that the reported “AgBi2I7” films cannot be forming with the ThZr2H7-type structure, but rather more likely adopt an Ag-deficient AgBiI4 type. Both the experimental X-ray diffraction pattern and bandgap can be better explained by the AgBiI4 structure. Additionally, the proposed AgBiI4 structure, with octahedral bismuth coordination, removes unphysically short Bi–I bonding within the [BiI8] hexahedra of the ThZr2I7 model. Our results provide critical insights for assessing the photovoltaic properties of AgBi2I7 iodobismuthate materials.

In this work, we describe details of a two-step deposition approach that enables the preparation of continuous and well-structured thin films of Cs2SnI6, which is a one-half Sn-deficient 0-D perovskite derivative (i.e., the compound can also be written as CsSn0.5I3, with a structure consisting of isolated SnI64– octahedra). The films were characterized using powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), thermogravimetric analysis (TGA), UV–vis spectroscopy, photoluminescence (PL), photoelectron spectroscopy (UPS, IPES, XPS), and Hall effect measurements. UV–vis and PL measurements indicate that the obtained Cs2SnI6 film is a semiconductor with a band gap of 1.6 eV. This band gap was further confirmed by the UPS and IPES spectra, which were well reproduced by the calculated density of states with the HSE hybrid functional. The Cs2SnI6 films exhibited n-type conduction with a carrier density of 6(1) × 1016 cm–3 and mobility of 2.9(3) cm2/V·s. While the computationally derived band str...

We assess the viability for photovoltaic applications of proposed Pb-free perovskites with mixed chalcogen and halogen anions, AB(Ch,X)3 (A = Cs or Ba; B = Sb or Bi; Ch = chalcogen; X = halogen), by examining critical issues such as the structural, electronic/optical properties, and stability through the combination of density-functional theory calculations and solid-state reactions. The calculations show that these quaternary Pb-free perovskites are thermodynamically unstable—they are prone to decompose into ternary and/or binary secondary phases or form phases with nonperovskite structures. Solid-state synthesis efforts confirm the theoretically predicted difficulty for preparing these compounds; all attempted reactions do not form the desired perovskite phases with mixed chalcogen and halogen anions under conditions examined. Instead, they form separate binary and ternary compounds. Despite earlier predictions of promising characteristics for these prospective perovskites for photovoltaics, our results...

We explore the photovoltaic-relevant properties of the 2D MA2Pb(SCN)2I2 (where MA = CH3NH3(+)) perovskite using a combination of materials synthesis, characterization and density functional theory calculation, and determine electronic properties of MA2Pb(SCN)2I2 that are significantly different from those previously reported in literature. The layered perovskite with mixed-anions exhibits an indirect bandgap of ∼2.04 eV, with a slightly larger direct bandgap of ∼2.11 eV. The carriers (both electrons and holes) are also found to be confined within the 2D layers. Our results suggest that the 2D MA2Pb(SCN)2I2 perovskite may not be among the most promising absorbers for efficient single-junction solar cell applications; however, use as an absorber for the top cell of a tandem solar cell may still be a possibility if films are grown with the 2D layers aligned perpendicular to the substrates.

Recently, solar cells based on 2D (CH3NH3)2Pb(SCN)2I2 perovskite have realized a power conversion efficiency of 3.23%. In this work, we study the defect properties of (CH3NH3)2Pb(SCN)2I2 through density-functional theory calculations. It is found that the lower crystal structure dimensionality of (CH3NH3)2Pb(SCN)2I2 makes the valence band maximum lower and the conduction band minimum higher as compared to its 3D CH3NH3PbI3 perovskite counterpart, resulting in relatively deeper defect transition levels. Our calculated defect formation energies suggest that if the 2D (CH3NH3)2Pb(SCN)2I2 perovskite absorbers are synthesized under Pb-poor and I-rich conditions, the dominant defects should be Pb vacancies, which create shallow levels. The resultant perovskite films are expected to exhibit p-type conductivity with a relatively long carrier lifetime.

Colorectal cancer (CRC) is a serious malignancy with the third incidence and second mortality throughout the world. 5-Hydroxymethylcytosine (5hmC) signatures in circulating cell-free DNA (cfDNA) is an important epigenetic mark linked with human cancer pathogenesis. Here we explored the genome-wide 5-hydroxymethylcytosine profiling in the plasma cfDNA and tissue genomic DNA (gDNA) acquired from 101 samples (63 from plasma and 38 from tissues), collected from 21 CRC patients, 21 precancerous adenoma (AD) patients and 21 healthy control individuals (HC). 5hmC modifications exhibited distinct features in promoter and gene body regions in all 5 groups (3 groups from plasma and 2 groups from tissues), which offered a global overview of epigenetic changes of colon pathogenic statuses between early stage CRC and AD. Adenoma showed an independent property in the 5hmC profiles compared to cancer and healthy control. The 5hmC signatures in tumor were more comprehensive and could be divided into two clusters, one was similar to the healthy individuals and the other was similar to the AD patients. The results indicated that the candidate biomarkers to distinguish colorectal cancer from the blood-test population should be generated in two ways, one focused on the differential 5hmC features between CRC patients and healthy individuals; the other should detect the adenoma and tumor patients more extensive according to their precise pathological diagnosis and clinical information. Candidate cfDNA 5hmC biomarkers were further identified in the differential 5hmC modification regions between CRC and HC with a higher sensitivity than the classical CEA marker in non-invasive blood-based diagnosis. We suggested that the differentially enriched 5hmC regions in cfDNA were potential biomarkers to track colorectal cancer, even precancerous adenoma, with further large-scale follow-up studies. Citation Format: Zewen Xiao, Jiayan Wu, Chunlong Wu, Man Li, Fuming Sun, Lu Zheng, Gaojing Liu, Xiaoling Li, Zhiyuan Yun, Jiebing Tang, Yang Yu, Shengnan Luo, Wenji Sun, Xiaohong Feng, Qian Cheng, Xue Tao, Jian Bai, Lin Wu, Shuangxiu Wu, Ji Tao. 5-Hydroxymethylcytosine signatures in cell-free DNA as a potential biomarker for colorectal cancer andprecancerous adenoma [abstract]. In: Proceedings of the Annual Meeting of the American Association for Cancer Research 2020; 2020 Apr 27-28 and Jun 22-24. Philadelphia (PA): AACR; Cancer Res 2020;80(16 Suppl):Abstract nr 4597.

Despite the exciting progress on power conversion efficiencies, the commercialization of the emerging lead (Pb) halide perovskite solar cell technology still faces significant challenges, one of which is the inclusion of toxic Pb. Searching for Pb-free perovskite solar cell absorbers is currently an attractive research direction. The approaches used for and the consequences of Pb replacement are reviewed herein. Reviews on the theoretical understanding of the electronic, optical, and defect properties of Pb and Pb-free halide perovskites and perovskite derivatives are provided, as well as the experimental results available in the literature. The theoretical understanding explains well why Pb halide perovskites exhibit superior photovoltaic properties, but Pb-free perovskites and perovskite derivatives do not.

This paper has been published in Bulletin of the Chemical Society of Japan, which can be viewed at the following URL: http://doi.org/10.1246/bcsj.20150110 Cs2SnI6, a variant of perovskite CsSnI3, is expected for a photovoltaic material. Based on a simple ionic model, it is expected that Cs2SnI6 is composed of Cs+, I-, and Sn4+ ions and that the band gap is primarily made of occupied I- 5p6 valence band maximum (VBM) and unoccupied Sn4+ 5s conduction band minimum (CBM) similar to SnO2. In this work, we performed density functional theory (DFT) calculations and revealed that the real oxidation state of the Sn ion in Cs2SnI6 is +2 similar to CsSnI3. The +2 oxidation state of Sn originates from 2 ligand holes in the [SnI6]2- octahedron unit, where the ligand [I6] cluster has the apparent [I66-L+2]4- oxidation state, because the band gap is formed mainly by occupied I 5p VBM and unoccupied I 5p CBM. The +2 oxidation state of Sn and the band gap are originated from the intracluster hybridization and stabilized by the strong covalent interaction between Sn and I.

Note: This paper has been published in Physical Chemistry Chemical Physics, which can be viewed at the following URL: http://doi.org/10.1039/C5CP03102H Cs2SnI6, a rarely studied perovskite variant material, is recently gaining a lot of interest in the field of photovoltaics owing to its nontoxity, air-stability and promissing photovoltaic properties. In this work, we report intrinsic defects in Cs2SnI6 using first-principles density functional theory calculations. It is revealed that iodine vacancy and tin interstitial are the dominant defects that are responsible for the intrinsic n-type conduction in Cs2SnI6. Tin vacancy has a very high formation energy (>3.6 eV) due to the strong covalency in the Sn-I bonds and is hardly generated for p-type doping. All the dominant defects in Cs2SnI6 have deep transition levels in the band gap. It is suggested that the formation of the deep defects can be suppressed significantly by employing an I-rich synthesis condition, which is inevitable for photovoltaic and other semiconductor applications.

MicroRNAs are small non-coding RNAs, which are critical regulators of carcinogenesis and tumor progression. Previous studies have identified that microRNA-20b (miR-20b) acts as an oncogene in numerous cancers. However, the role of miR-20b in prostate cancer remains unclear. The present study aimed to investigate the expression of miR-20b in prostate cancer and to examine whether modulating miR-20b expression impacts prostate cancer cellular proliferation and migration. It was revealed that miR-20b was strongly expressed in prostate cancer tissues compared with adjacent normal prostate tissues (P

Electrides are unique in the sense that they contain localized anionic electrons in the interstitial regions. Yet they exist with a diversity of chemical compositions, especially under extreme conditions, implying generalized underlying principles for their existence. What is rarely observed is the combination of electride state and superconductivity within the same material, but such behavior would open up a new category of superconductors. Here, we report a hexagonal Nb5Ir3 phase of Mn5Si3-type structure that falls into this category and extends the electride concept into intermetallics. The confined electrons in the one-dimensional cavities are reflected by the characteristic channel bands in the electronic structure. Filling these free spaces with foreign oxygen atoms serves to engineer the band topology and increase the superconducting transition temperature to 10.5 K in Nb5Ir3O. Specific heat analysis indicates the appearance of low-lying phonons and two-gap s-wave superconductivity. Strong electron–phonon coupling is revealed to be the pairing glue with an anomalously large ratio between the superconducting gap Δ 0 and T c, 2Δ 0/k B T c = 6.12. The general rule governing the formation of electrides concerns the structural stability against the cation filling/extraction in the channel site. Coexistence of electride behavior and superconductivity is observed in a hexagonal phase of a Nb5Ir3 intermetallic with tunable electronic properties by introducing foreign atoms. A team led by Yaoqing Zhang and Hideo Hosono from Japan Science and Technology Agency and Tokyo Institute of Technology report a new hexagonal phase in the phase diagram of Nb–Ir binary intermetallics with interesting interplay of superconductivity and electride state. The electride state is formed by electrons detaching from the atoms but localizing in a one-dimensional channel space. This electride becomes a superconductor below a transition temperature of about 9.4 K, which could be enhanced to 10.5 K upon filling interstitial cavities with foreign oxygens. The results suggest a general rule governing the formation of electrides and form the basis for novel stable functional electrides.

Bismuth- or antimony-based lead-free double perovskites represented by Cs2 AgBiBr6 have recently been considered promising alternatives to the emerging lead-based perovskites for solar cell applications. These new perovskites belong to the Fm3‾ m space group and consist of two types of octahedra alternating in a rock-salt face-centered cubic structure. We show, by density functional theory calculations, that the stable chemical potential region for pure Cs2 AgBiBr6 is narrow. Ag vacancies are a shallow accepters and can easily form, leading to intrinsic p-type conductivity. Bi vacancies and AgBi antisites are deep acceptors and should be the dominant defects under the Br-rich growth conditions. Our results suggest that the growth of Cs2 AgBiBr6 under Br-poor/Bi-rich conditions is preferred for suppressing the formation of the deep defects, which is beneficial for maximizing the photovoltaic performance.

Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was achieved by isovalent ion substitution for polycrystalline SnS thin films on glass substrates. Substituting Pb2+ for Sn2+ converted the majority carrier from hole to electron and the free electron density ranged from 1012 to 1015 cm−3 with the largest electron mobility of 7.0 cm2/(Vs). The n-type conduction was confirmed further by the position of the Fermi level (EF) based on photoemission spectroscopy and electrical characteristics of pn heterojunctions. Density functional theory calculations reveal that the Pb substitution invokes a geometrical size effect that enlarges the interlayer distance and subsequently reduces the formation energies of Sn and Pb interstitials, which results in the electron doping.

Beta-BaZn2As2 is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that beta-BaZn2As2 and LaZnAsO have similar bandgaps; however, the bandgap of beta-BaZn2As2 (previously-reported value ~0.2 eV) is one order of magnitude smaller than that of LaZnAsO (1.5 eV). In this paper, the reliable bandgap value of beta-BaZn2As2 is determined to be 0.23 eV from the intrinsic region of the tem-perature dependence of electrical conductivity. The origins of this narrow bandgap are discussed based on the chemi-cal bonding nature probed by 6 keV hard X-ray photoemission spectroscopy, hybrid density functional calculations, and the ligand theory. One origin is the direct As-As hybridization between adjacent [ZnAs] layers, which leads to a secondary splitting of As 4p levels and raises the valence band maximum. The other is that the non-bonding Ba 5dx2-y2 orbitals form unexpectedly deep conduction band minimum (CBM) in beta-BaZn2As2 although the CBM of LaZnAsO is formed mainly of Zn 4s. These two origins provide a quantitative explanation for the bandgap difference between beta-BaZn2As2 and LaZnAsO.

Lead halide perovskites have recently emerged as promising absorbers for fabricating low-cost and high-efficiency thin-film solar cells. The record power conversion efficiency of lead halide perovskite-based solar cells has rapidly increased from 3.8% in 2009 to 22.1% in early 2016. Such rapid improvement is attributed to the superior and unique photovoltaic properties of lead halide perovskites, such as the extremely high optical absorption coefficients and super-long photogenerated carrier lifetimes and diffusion lengths that are not seen in any other polycrystalline thin-film solar cell materials. In the past a few years, theoretical approaches have been extensively applied to understand the fundamental mechanisms responsible for the superior photovoltaic properties of lead halide perovskites and have gained significant insights. This review article highlights the important theoretical results reported in literature for the understanding of the unique structural, electronic, optical, and defect properties of lead halide perovskite materials. For comparison, we also review the theoretical results reported in literature for some lead-free perovskites, double perovskites, and nonperovskites.

The regulation of initiation and progression during carcinogenesis of bladder carcinoma is not completely elucidated. Dysregulation of microRNAs has been detected to play critical roles in the development of various cancers, including bladder carcinoma, whereas the involvement of miR-223-3p in the tumorigenesis of bladder carcinoma has not been studied. Here, we show that significantly higher levels of nuclear receptor coactivator 1 and significantly lower levels of miR-223-3p were detected in bladder carcinoma tissue, compared to the adjacent non-tumor tissue. In addition, the levels of nuclear receptor coactivator 1 and miR-223-3p were inversely correlated. Moreover, low miR-223-3p levels in bladder carcinoma specimens were associated with poor prognosis. In vitro, depletion of miR-223-3p increased bladder carcinoma cell invasion, which was abolished by overexpression of nuclear receptor coactivator 1. Bioinformatics studies demonstrate that miR-223-3p may bind to the 3′-UTR of nuclear receptor coactivator 1 messenger RNA to inhibit its protein translation in bladder carcinoma cells. Together, our study highlights miR-223-3p as a previously unrecognized microRNA that inhibits bladder carcinoma invasiveness via nuclear receptor coactivator 1, and this finding may be important for developing innovative therapeutic targets in treating bladder carcinoma.

BaZn2As2 is expected for a good p-type semiconductor and has two crystalline phases of an orthorhombic alpha phase and a higher-symmetry tetragonal beta phase. Here, we report high-quality epitaxial films of the tetragonal beta-BaZn2As2 were grown on single-crystal MgO (001) substrates by a reactive solid-phase epitaxy technique. Out-of-plane and in-plane epitaxial relationships between the film and the substrate were BaZn2As2 (00l)//MgO (001) and BaZn2As2 [200]//MgO [200], respectively. The full-widths at half maximum were 0.082o for a 008 out-of-plane rocking curve and 0.342o for a 200 in-plane rocking curve. A step-and-terrace structure was observed by atomic force microscopy. The band gap of beta-BaZn2As2 was evaluated to be around 0.2 eV, which is much smaller than that of a family compound LaZnOAs (1.5 eV). Density functional theory calculation using the Heyd-Scuseria-Ernzerhof hybrid functionals supports the small band gap., 6 pages, 8 figures, Thin Solid Films, in press