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UWB ranging systems have been adopted in many critical and security sensitive applications due to its precise positioning and secure ranging capabilities. We present a practical jamming attack, namely UWBAD, against commercial UWB ranging systems, which exploits the vulnerability of the adoption of the normalized cross-correlation process in UWB ranging and can selectively and quickly block ranging sessions without prior knowledge of the configurations of the victim devices, potentially leading to severe consequences such as property loss, unauthorized access, or vehicle theft. UWBAD achieves more effective and less imperceptible jamming due to: (i) it efficiently blocks every ranging session by leveraging the field-level jamming, thereby exerting a tangible impact on commercial UWB ranging systems, and (ii) the compact, reactive, and selective system design based on COTS UWB chips, making it affordable and less imperceptible. We successfully conducted real attacks against commercial UWB ranging systems from the three largest UWB chip vendors on the market, e.g., Apple, NXP, and Qorvo. We reported our findings to Apple, related Original Equipment Manufacturers (OEM), and the Automotive Security Research Group, triggering internal security incident response procedures at Volkswagen, Audi, Bosch, and NXP. As of the writing of this paper, the related OEM has acknowledged this vulnerability in their automotive systems and has offered a $5,000 reward as a bounty., Comment: Proceedings of the 2024 ACM SIGSAC Conference on Computer and Communications Security

The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with the simplest degree of freedom is an ideal and highly desirable system for studying the fundamental physics of Mottness. In this study, we have unambiguously identified such an anticipated Mott insulator in a van der Waals layered compound Nb3Cl8. In the high-temperature phase, where interlayer coupling is negligible, density functional theory calculations for the monolayer of Nb3Cl8 suggest a half-filled flat band at the Fermi level, whereas angle-resolved photoemission spectroscopy experiments observe a large gap. This observation is perfectly reproduced by dynamical mean-field theory calculations considering strong electron correlations, indicating a correlation-driven Mott insulator state. Since this half-filled band derived from a single 2a1 orbital is isolated from all other bands, the monolayer of Nb3Cl8 is an ideal realization of the celebrated single-band Hubbard model. Upon decreasing the temperature, the bulk system undergoes a phase transition, where structural changes significantly enhance the interlayer coupling. This results in a bonding-antibonding splitting in the Hubbard bands, while the Mott gap remains dominant. Our discovery provides a simple and seminal model system for investigating Mott physics and other emerging correlated states., Comment: 23 pages, 4 figures, and the Supplemental Material