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In this study, innovative nanoscale devices are developed to investigate the charge transport in organic semiconductor nanoparticles. Using different steps of lithography techniques and dielectrophoresis, planar organic nano-junctions are fabricated from which hole mobilities are extracted in a space charge-limited current regime. Subsequently, these devices are used to investigate the impact of the composition and morphology of organic semiconductor nanoparticles on the charge mobilities. Pure donor nanoparticles and composite donor:acceptor nanoparticles with different donor compositions in their shell are inserted in the nanogap electrode to form the nano-junctions. The results highlight that the hole mobilities in the composite nanoparticles decrease by two-fold compared to pure donor nanoparticles. However, no significant change between the two kinds of composite nanoparticle morphologies is observed, indicating that conduction pathways for the holes are as efficient for donor proportion in the shell from 40% to 60%. Organic photovoltaic (OPV) devices are fabricated from water-based colloidal inks containing the two composite nanoparticles (P3HT:eh-IDTBR and P3HT:o-IDTBR) and no significant change in the performances is observed in accordance with the mobility results. Through this study, the performance of OPV devices have been succesfully correlated to the transport properties of nanoparticles having different morphology via innovative nanoscale devices.

Highlights: Atomically dispersed metal atoms effectively enhance energy level alignment and reduce energy losses at the electrode interfaces. The optimized carbon-based perovskite solar cells achieve a power conversion efficiency (PCE) of 22.61% and maintain 94.4% of their initial PCE after 1000 h under continuous illumination without encapsulation. Carbon-based perovskite solar cells (C-PSCs) exhibit notable stability and durability. However, the power conversion efficiency (PCE) is significantly hindered by energy level mismatches, which result in interfacial charge transport barriers at the electrode-related interfaces. Herein, we report a back electrode that utilizes atomically dispersed metallic cobalt (Co) in carbon nanosheets (Co1/CN) to adjust the interfacial energy levels. The electrons in the d-orbitals of Co atoms disrupt the electronic symmetry of the carbon nanosheets (CN), inducing a redistribution of the electronic density of states that leads to a downward shift in the Fermi level and a significantly reduced interfacial energy barrier. As a result, the C-PSCs using Co1/CN as back electrodes achieve a notable PCE of 22.61% with exceptional long-term stability, maintaining 94.4% of their initial efficiency after 1000 h of continuous illumination without encapsulation. This work provides a promising universal method to regulate the energy level of carbon electrodes for C-PSCs and paves the way for more efficient, stable, and scalable solar technologies toward commercialization. [ABSTRACT FROM AUTHOR]

The advancement and meticulous design of functional photocatalysts exhibiting exceptional photocatalytic redox activity represent a pivotal approach to mitigating the dual challenges of environmental pollution and energy scarcity. In this study, we elucidate the construction of a Bi 2 O 2 CO 3 catalytic system capable of inhibiting oxidative electron transfer through the attenuation of homogeneous Bi0 particle formation, achieved through the judicious modulation of solvent ratios. This innovative architecture possesses a distinctive active site and enhances interfacial Bi-O electron transfer pathways via exposure to oxidized Bi3+. Upon photoexcitation, the Bi 2 O 2 CO 3 catalytic system undergoes structural distortions in its excited state that facilitate forbidden radiative relaxation, thereby fostering long-lived charge separation states. Remarkable catalytic activity was demonstrated in the remediation of pollutants, encompassing auto-oxidation and the catalytic degradation of superoxide radicals (•O 2 −) and holes (h+). Notably, the effective degradation of tetracycline hydrochloride (TCH) in aqueous media reached an impressive 86 % under simulated visible light irradiation, accompanied by a reaction rate constant 3.08 times superior to that of the 5-Bi/Bi 2 O 2 CO 3 counterpart. Theoretical analyses revealed that the oxidized state of Bi 2 O 2 CO 3 exhibits a crystal structure with significant electron trapping capability, undergoing pronounced apparent relaxation phenomena on its surface while demonstrating an enhanced adsorption affinity for H 2 O and O 2. The potential degradation mechanisms were rigorously investigated through High-performance liquid chromatography (HPLC-MS), elucidating the photodegradation pathways and intermediates of TC. This work may serve as a distinct paradigm for the rational design of novel photocatalysts aimed at fostering sustainable environmental remediation and advancing energy innovation. [ABSTRACT FROM AUTHOR]

Hydrothermally grown NiO nanoflakes have been investigated here for their resistive switching (RS) and photoabsorption characteristics. The formation and disruption of the conducting filament (CF) under an applied external electric field leads to bistable resistive switching in the grown NiO nanoflakes. Comprehensive investigations of the I–V behaviour show that the formation and rupturing of the CF depend on the concentration of the metallic Ni. Interestingly, photoabsorption response demonstrates a nearly similar behaviour in UV and visible regions for nanoflakes grown at low reaction time, but an enhanced UV response for the flakes obtained at larger reaction times. These nanoflakes displaying multifunctional properties of photoabsorption and RS behaviour, that can be modulated with reaction time, are attractive for optoelectronic, electrochromic and RS-based memory applications. [ABSTRACT FROM AUTHOR]

The I-V characteristics of heterostructures n-GaAs – p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ) exhibit a characteristic quadratic law - J~V2 I-V curve, followed by a sharp pre-breakdown current growth, which well explains the observed straight branch of the I-V characteristics and this regularity remains unchanged at different temperatures. The analysis of the I-V characteristics of n‑GaAs‑p‑(ZnSe)1‑x‑y(Ge2)x(GaAs1–δBiδ) heterostructures with an extended intermediate solid solution layer shows that the drift mechanism of charge transport predominates under forward bias conditions.

Antimony-based perovskites have been recognized for their distinctive optoelectronic attributes, standard fabrication methodologies, reduced toxicity, and enhanced stability. The objective of this study is to systematically investigate and enhance the performance of all-inorganic solar cell architectures by integrating Cs3Sb2I9, a perovskite-analogous material, with WS2—a promising transition metal dichalcogenide—used as the electron transport layer (ETL), and Cu2O serving as the hole transport layer (HTL). This comprehensive assessment extends beyond the mere characterization of material attributes such as layer thickness, doping levels, and defect densities, to include a thorough investigation of interfacial defect effects within the structure. Optimal efficiency was observed when the Cs3Sb2I9 absorber layer thickness was maintained within the 600-700 nm range. The defect tolerance for the absorber layer was identified at 1×1015/cm3, with the ETL and HTL layers exhibiting significant defect tolerance at 1×1016/cm3 and 1×1017/cm3, respectively. Furthermore, this study calculated the minority carrier lifetime and diffusion length, establishing a strong correlation with defect density; a minority carrier lifetime of approximately 1 µs was noted for a defect density of1×1014/cm3 in the absorber layer. A noteworthy finding pertains to the balance between the high work function of the back contact and the incorporation of p-type back surface field layers, revealing that interposing a highly doped p+ layer between the Cu2O and the metal back contact can elevate the efficiency to 21.60%. This approach also provides the freedom to select metals with lower work functions, offering a cost-effective advantage for commercial-scale applications.

Nickel‐doped cobalt bi‐metal nanoparticles (Ni/Co BMNPs) are employed in the transport buffer layer of thin‐film polymer solar cell to assist in the collection of photons generated current. P3HT:PCBM blend‐based polymer solar cells are successfully fabricated with modified hole transport layer (HTL)‐containing BMNPs at different concentrations. The performance of the devices has generally improved compared to the reference cell by the presence of BMNPs in the transport buffer layer, and shows sign of dependence on concentration level. Significant improvements in device performance are recorded at optimum level of 0.05% BMNPs by weight, which resulted in a high current density of 15.31 mA cm−2, and recorded 5.05% power conversion efficiency (PCE). This is 67.8% growth in PCE is compared to the reference cell. Moreover, another investigation is conducted using device simulation program to check the reproducibility of the experiments. The device that is made to mimic the best performance at 0.05% BNMP concentration produced an efficiency of 5.76%. Such reproducibility of data is an important development toward better understanding of the charge transport process in polymer solar cell. This study further provides new evidences about factors that influence device performance due to the inclusion of the BMNPs. [ABSTRACT FROM AUTHOR]

The reversible photo-induced conformation transition of a single molecule with a [5]helicene backbone has garnered considerable interest in recent studies. Based on such a switching process, one can build molecular photo-driven switches for potential applications of nanoelectronics. But the achievement of high-performance reversible single-molecule photoswitches is still rare. Here, we theoretically propose a 13,14-dimethylcethrene switch whose photoisomerization between the ring-closed and ring-open forms can be triggered by ultraviolet (UV) and visible light irradiation. The electronic structure transitions and charge transport characteristics, concurrent with the photo-driven electrocyclization of the molecule, are calculated by the non-equilibrium Green's function (NEGF) in combination with density functional theory (DFT). The electrical conductivity bears great diversity between the closed and open configurations, certifying the switching behavior and leading to a maximum on–off ratio of up to 103, which is considerable in organic junctions. Further analysis confirms the evident switching behaviors affected by the molecule–electrode interfaces in molecular junctions. Our findings are helpful for the rational design of organic photoswitches at the single-molecule level based on cethrene and analogous organic molecules. [ABSTRACT FROM AUTHOR]

It is now well‐established that ferroelectric domain walls, at which there are discontinuities in polarization, are usually electrically conducting. Yet, there is a dearth of rather basic information on the physics underpinning conductivity. Here, Kelvin Probe Force Microscopy (KPFM)‐based experiments are reported, which allow significant new insights regarding charge transport at domain walls in ErMnO3. In one set of experiments, KPFM is used to spatially map the Hall potential, developed at the surface of polished single crystals. These maps provide direct experimental evidence that n‐type head‐to‐head domain walls arise in otherwise p‐type material. In another set of experiments, the geometry for current flow is restricted, by cutting sub‐micron thick lamellar slices of ErMnO3 (using a Focused Ion Beam microscope). Separate contacts are made to n and p‐type walls and the potential profiles, when driving source‐drain currents, are measured (again using KPFM). Current‐electric field functions showed Ohmic behaviour for p‐type walls, with an intrinsic room temperature conductivity value of ≈0.4Sm−1. The n‐type walls showed non‐Ohmic behaviour and a significantly lower conductivity, supporting the prediction that electrons are in a polaronic state; an upper bound for the room temperature conductivity of the domains themselves is ≈6 × 10−6Sm−1 at 0.1 MVm−1. [ABSTRACT FROM AUTHOR]

The construction of anatase/rutile heterojunctions in TiO2 is an effective way of improving the CO2 photoreduction activity. Yet, the origin of the superior photocatalytic performance is still unclear. To solve this issue, the band edges between anatase and rutile phases were theoretically determined based on the three-phase atomic model of (112)A/II/(101)R, and simultaneously the CO2 reduction processes were meticulously investigated. Our calculations show that photogenerated holes can move readily from anatase to rutile via the thin intermediated II phase, while photoelectrons flowing in the opposite direction may be impeded due to the electron trapping sites at the II phase. However, the large potential drop across the anatase/rutile interface and the strong built-in electric field can provide an effective driving force for photoelectrons' migration to anatase. In addition, the II phase can better enhance the solar light utilization of (112)A/(100)II, including a wide light response range and an intensive optical absorption coefficient. Meanwhile, the mixed-phase TiO2 possesses negligible hydrogenation energy (CO2 to COOH*) and lower rate-limiting energy (HCOOH* to HCO*), which greatly facilitate CH3OH generation. The efficient charge separation, strengthened light absorption, and facile CO2 reduction successfully demonstrate that the anatase/rutile mixed-phase TiO2 is an efficient photocatalyst utilized for CO2 conversion. [ABSTRACT FROM AUTHOR]

Organometallic halide perovskites have shown significant promise for applications in optoelectronics and photovoltaics in recent years. This research looks into the performance of bulk heterojunction-based photodetectors (PDs) based on the active layer of a CH3NH3PbI3:PCBM bulk heterojunction (BHJ). We assessed the impact of PCBM concentration in CH3NH3PbI3:PCBM BHJ on the electrical performance of the PDs. We found that the BHJ PD with a 4% PCBM concentration had the strongest capability to reject noise, as demonstrated by its superior ratio of photocurrent to dark current. Moreover, the PD with a 4% PCBM concentration in the active layer outperforms pristine CH3NH3PbI3-based PDs in terms of optoelectronic performance, showing greater responsivity and detectivity. The improved optoelectronic performance of BHJ PD is due to increased interfacial area, higher electron extraction and a decrease in traps and defects. The analysis of dark current–voltage curves reveals a significant reduction in charge recombination for BHJ devices, supporting the elimination of traps and defects by the inclusion of PCBM. The PD’s impedance study unveils that the incorporation of PCBM enhances charge transfer and effectively suppresses charge recombination, leading to enhanced optoelectronic performance. [ABSTRACT FROM AUTHOR]

The distribution of density of states (DOS) holds fundamental importance in determining charge transport within organic field–effect transistors (OFETs). Herein, the modulation of DOS distribution in OFET devices is demonstrated by altering the chain conformation of the polymer dielectrics. A rapid film‐formation technique, specifically the spin‐casting method, is used to fabricate the dielectric layer using poly(methyl methacrylate) (PMMA). This method allows for the retention of some memory of the chain conformations from the solution to the resulting dry film. This memory effect is employed to prepare thin PMMA films with different local chain conformations by adjusting the quality of the solvent. Good solvent forms solidified films with a reduced amount of gauche conformer in the PMMA chain, resulting in a narrow DOS distribution width. Consequently, the device exhibited enhanced charge mobility and a reduced subthreshold swing. The observed change in the width of the DOS distribution can be attributed to the alteration of the local energy state of the semiconductor, induced by the local chain conformation of PMMA dielectrics through electrostatics and steric interactions. [ABSTRACT FROM AUTHOR]

Thermoelectric (TE) charge transport in organic TE nanocomposite systems is a critical consideration in designing high‐performance TE materials. Here, the relationship between the TE properties and energy structure of conducting polymer/quantum dot (QD) nanocomposites is systematically investigated by developing a potential wall or potential well in poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with CdTe QDs. The added QDs are primarily distributed within the electrically insulating PSS shell and act as stepping stones for charge transport between PEDOT‐rich grains. The embedded QDs generate an energy‐filtering effect, which is induced by both potential wall and potential well states established by the QDs in the PEDOT:PSS films. The induced energy‐filtering effect increases the Seebeck coefficient S with limited loss of electrical conductivity σ, thereby overcoming the TE trade‐off relation S ∝ σ−1/4. The energy‐filtering effect is optimized by carefully controlling the QD size. The PEDOT:PSS/QD nanocomposite containing the smallest QDs exhibits a power factor of 173.8 µW m−1 K−2, which is 80% larger than the value for the pristine PEDOT:PSS film. This work suggests a strategy for designing TE nanocomposites with improved TE performance and emphasizes the importance of fine‐tuning the interfacial energy gap to achieve an effective energy‐filtering effect. [ABSTRACT FROM AUTHOR]

Thin film solar cells are gaining popularity as an affordable, efficient, and flexible substitute for traditional silicon solar cells . This success is closely tied to the deposition techniques used to fabricate their layers. This review explores and analyzes the advances in the major deposition techniques for solar cell applications, offering insights into their underlying principles, associated advantages, drawbacks, and suitability for diverse materials and device architectures. The two primary deposition for thin film solar cells are PVD and CVD. In PVC materials are physically ejecting from a target, and depositing it onto a substrate. While, CVD entails the reaction of gases or vapour precursors to creating film on a substrate. The ability to achieve high purity, control over film properties, scalability, and compatibility with flexible substrates are notable advantages. However, challenges such as high costs and complexity can impact the commercial viability of certain techniques. Recent advancements in the technology of thin film deposition for solar cells include the discovery of novel materials with enhanced light absorption and electronic charge transport capabilities, emerging deposition processes such as pulsed laser deposition, and atomic layer deposition scalable and low-cost processes like roll-to-roll processing, and integration with other technologies like perovskite solar cells and tandem devices. Understanding these techniques and staying informed about recent advancements and future directions empowers researchers and engineers to innovate and create improved thin film solar cells, contributing significantly to a more sustainable future through enhanced solar energy harvesting technologies. [ABSTRACT FROM AUTHOR]

The charge carrier mobility in tris(4‐carbazoyl‐9‐ylphenyl)amine (TCTA), a host and hole transport material typically used in organic light‐emitting diodes (OLEDs), is measured using charge carrier electrical injection metal–insulator–semiconductor charge extraction by linearly increasing voltage (i‐MIS‐CELIV). By employing the injection current i‐MIS‐CELIV method, charge transport at time scales shorter than the transit times typically observed in standard MIS‐CELIV is measured. The i‐MIS‐CELIV technique enables the experimental measurement of unequilibrated and pretrapped charge carriers. Through a comparison of injection and extraction current transients obtained from i‐MIS‐CELIV and MIS‐CELIV, it is concluded that hole trapping is negligible in evaporated neat films of TCTA within the time‐scales relevant to the operational conditions of optoelectronic devices, such as OLEDs. Furthermore, photocarrier generation in conjunction with i‐MIS‐CELIV (photo‐i‐MIS‐CELIV) to quantify the properties of charge injection from the electrode to the semiconductor of the MIS devices is utilized. Based on the photo‐i‐MIS‐CELIV measurements, it is observed that the contact resistance does not limit the injection current at the TCTA/molybdenum oxide/silver interface. Therefore, when TCTA is employed as the hole transport/electron‐blocking layer in OLEDs, it does not significantly reduce the injection current and remains compatible with the high injection current densities required for efficient OLED operation. [ABSTRACT FROM AUTHOR]

Abstract Perovskite solar cells (PSCs) are an ideal candidate for next‐generation photovoltaic applications but face many challenges for their wider application, including uncontrolled fast crystallization, trap‐assisted nonradiative recombination, and inefficient charge transport. Herein, a multistage regulation (MSR) strategy for addressing these challenges is proposed via the introduction of fluorine‐rich small molecules with multiple active points (i.e., 1‐[Bis(trifluoromethanesulfonyl)methyl]‐ 2,3,4,5,6‐pentafluorobenzene (TFSP)) into the precursor solution of the perovskite film. The addition of TFSP effectively delays and regulates the crystallization and growth process of the perovskite film for larger grains and fewer defects, and it effectively improves the coverage of self‐assembled molecules for efficient charge transport. The multiple active points of TFSP induce a strong binding affinity with uncoordinated defects in the perovskite film. Moreover, the high fluorine content of TFSP induces strong electronegativity to establish a high binding strength between the perovskite film and electron transport layer. Finally, PSCs prepared by the MSR strategy demonstrated an optimal power conversion efficiency (PCE) of 25.46% and maintained 91.16% of the initial PCE under nonpackaged air conditions and at a relative humidity of 45% after 3000 h.

This study investigates the solid-state charge transport properties of the oxidized forms of dioxythiophene-based alternating copolymers consisting of an oligoether-functionalized 3,4-propylenedioxythiophene (ProDOT) copolymerized with different aryl groups, dimethyl ProDOT (DMP), 3,4-ethylenedioxythiophene (EDOT), and 3,4-phenylenedioxythiophene (PheDOT), respectively, to yield copolymers P(OE3)-D, P(OE3)-E, and P(OE3)-Ph. At a dopant concentration of 5 mM FeTos3, the electrical conductivities of these copolymers vary significantly (ranging between 9 and 195 S cm-1) with the EDOT copolymer, P(OE3)-E, achieving the highest electrical conductivity. UV-vis-NIR and X-ray spectroscopies show differences in both susceptibility to oxidative doping and extent of oxidation for the P(OE3) series, with P(OE3)-E being the most doped. Wide-angle X-ray scattering measurements indicate that P(OE3)-E generally demonstrates the lowest paracrystallinity values in the series, as well as relatively small π-π stacking distances. The significant (i.e., order of magnitude) increase in electrical conductivity of doped P(OE3)-E films versus doped P(OE3)-D or P(OE3)-Ph films can therefore be attributed to P(OE3)-E exhibiting both the highest carrier ratios in the P(OE3) series, along with good π-π overlap and local ordering (low paracrystallinity values). Furthermore, these trends in the extent of doping and paracrystallinity are consistent with the reduced Fermi energy level and transport function prefactor parameters calculated using the semilocalized transport (SLoT) model. Observed differences in carrier ratios at the transport edge (ct) and reduced Fermi energies [η(c)] suggest a broader electronic band (better overlap and more delocalization) for the EDOT-incorporating P(OE3)-E polymer relative to P(OE3)-D and P(OE3)-Ph. Ultimately, we rationalize improvements in electrical conductivity due to microstructural and doping enhancements caused by EDOT incorporation, a structure-property relationship worth considering in the future design of highly electrically conductive systems.

Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composition, vacuum ultraviolet (VUV) irradiation, and plasma treatment on the electrical properties of these films. Through an extensive survey of literature and experimental findings, we elucidate the intricate interplay between these factors and the resulting alterations in electrical conductivity, dielectric constant, and breakdown strength of OSG films. Key focus areas include the impact of diverse organic moieties incorporated into the silica matrix, the effects of VUV irradiation on film properties, and the modifications induced by various plasma treatment techniques. Furthermore, the underlying mechanisms governing these phenomena are discussed, shedding light on the complex molecular interactions and structural rearrangements occurring within OSG films under different environmental conditions. It is shown that phonon-assisted electron tunneling between adjacent neutral traps provides a more accurate description of charge transport in OSG low-k materials compared to the previously reported Fowler–Nordheim mechanism. Additionally, the quality of low-k materials significantly influences the behavior of leakage currents. Materials retaining residual porogens or adsorbed water on pore walls show electrical conductivity directly correlated with pore surface area and porosity. Conversely, porogen-free materials, developed by Urbanowicz, exhibit leakage currents that are independent of porosity. This underscores the critical importance of considering internal defects such as oxygen-deficient centers (ODC) or similar entities in understanding the electrical properties of these materials. [ABSTRACT FROM AUTHOR]

Perovskite solar cells (PSCs) have demonstrated remarkable progress in performance in recent years, which has placed perovskite materials as the leading promising materials for future renewable energy applications. The solvent additive technique in perovskite composition is a simple but effective process used to improve the surface quality of the perovskite layers and to improve the performance and charge transport processes essential to the functions of PSCs. These additives can have a considerable effect on the topography, crystallinity, and surface properties of the perovskite active layer, ultimately influencing the stability of the PSCs. A "two-step spin coating" deposition method to make PSCs in ambient air laboratory conditions was employed. Acetonitrile (ACN) was conventionally utilized as a chemical additive to enhance the performance of PSCs. In this study, our film properties exhibited that the incorporation of ACN in the triple cation perovskite precursor led to the passivation of surface defects and a noticeable increase in the size of the crystal grains of the perovskite films, which led to enhanced stability of devices. The efficiency achieved for PSCs prepared with 10% ACN was 15.35%, which is 30% higher than devices prepared without ACN. In addition, devices prepared with ACN have shown a lower hysteresis index and more stable behavior compared to devices prepared without ACN. This work presents an easy, low-cost method for the fabrication of high performance PSCs prepared under ambient air laboratory conditions. [ABSTRACT FROM AUTHOR]

The mechanically cleaved flake of ternary metal chalcogenide PbSnSe 2 was transferred onto the interdigitated electrodes to form electrical contacts. The temperature dependent (180 K–250 K) electrical properties were then analyzed employing complex impedance spectroscopy from 2 kHz to 2 MHz. A detailed analysis of Nyquist plots proposed the space charge dependent behavior and negative temperature coefficient of PbSnSe 2 flake. The AC conductivity followed Jonscher's power law with s -parameter value being less than unity. The values of s -parameter increased with rise in temperature suggesting the presence of non-overlapping small polaron tunneling (NSPT) in the PbSnSe 2 flake. From this NSPT model, tunneling distance, hopping energy, and density of states (DOS) were estimated at temperatures from 180 K–250 K. The dielectric permittivity showed dispersion at lower frequencies and the tangent loss was also found to be directly related to temperature. A single semicircular arc in complex modulus analysis showed the dominance of bulk effect in the material. [ABSTRACT FROM AUTHOR]

The I-V characteristics of heterostructures n-GaAsp-(ZnSe)1-x-y(Ge2)x(GaAs1-δBiδ) exhibit a characteristic quadratic law - J~V² I-V curve, followed by a sharp pre-breakdown current growth, which well explains the observed straight branch of the I-V characteristics and this regularity remains unchanged at different temperatures. The analysis of the I-V characteristics of n-GaAs-p-(ZnSe) 1-x-y(Ge2)x(GaAs1-δBiδ) heterostructures with an extended intermediate solid solution layer shows that the drift mechanism of charge transport predominates under forward bias conditions. [ABSTRACT FROM AUTHOR]

Outstanding charge transport in molecular crystals is of great importance in modern electronics and optoelectronics. The widely adopted strategies to enhance charge transport, such as restraining intermolecular vibration, are mostly limited to organic molecules, which are nearly inoperative in 2D inorganic molecular crystals currently. In this contribution, charge transport in 2D inorganic molecular crystals is improved by integrating charge‐delocalized Se8 rings as building blocks, where the delocalized electrons on Se8 rings lift the intermolecular orbitals overlap, offering efficient charge transfer channels. Besides, α‐Se flakes composed of charge‐delocalized Se8 rings possess small exciton binding energy. Benefitting from these, α‐Se flake exhibits excellent photodetection performance with an ultrafast response rate (~5 μs) and a high detectivity of 1.08 × 1011 Jones. These findings contribute to a deeper understanding of the charge transport of 2D inorganic molecular crystals composed of electron‐delocalized inorganic molecules and pave the way for their potential application in optoelectronics. [ABSTRACT FROM AUTHOR]

Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowest-energy singlet transition, efficient luminescence, pronounced delocalization of the excited state, and balanced charge transport. The fabricated OFETs showed a photoelectric response for wavelengths shorter than 530 nm and simultaneously EL in the transistor channel, with a maximum at ~570 nm. The devices demonstrated an EL external quantum efficiency (EQE) of ~1.4% and a photoelectric responsivity of ~0.7 A W–1, which are among the best values reported for state-of-the-art organic light-emitting transistors and phototransistors, respectively. We anticipate that our results will stimulate the design of efficient materials for multifunctional organic optoelectronic devices and expand the potential applications of organic (opto)electronics. [ABSTRACT FROM AUTHOR]

Nickel‐doped cobalt bi‐metal nanoparticles (Ni/Co BMNPs) are employed in the transport buffer layer of thin‐film polymer solar cell to assist in the collection of photons generated current. P3HT:PCBM blend‐based polymer solar cells are successfully fabricated with modified hole transport layer (HTL)‐containing BMNPs at different concentrations. The performance of the devices has generally improved compared to the reference cell by the presence of BMNPs in the transport buffer layer, and shows sign of dependence on concentration level. Significant improvements in device performance are recorded at optimum level of 0.05% BMNPs by weight, which resulted in a high current density of 15.31 mA cm−2, and recorded 5.05% power conversion efficiency (PCE). This is 67.8% growth in PCE is compared to the reference cell. Moreover, another investigation is conducted using device simulation program to check the reproducibility of the experiments. The device that is made to mimic the best performance at 0.05% BNMP concentration produced an efficiency of 5.76%. Such reproducibility of data is an important development toward better understanding of the charge transport process in polymer solar cell. This study further provides new evidences about factors that influence device performance due to the inclusion of the BMNPs.

Abstract It is now well‐established that ferroelectric domain walls, at which there are discontinuities in polarization, are usually electrically conducting. Yet, there is a dearth of rather basic information on the physics underpinning conductivity. Here, Kelvin Probe Force Microscopy (KPFM)‐based experiments are reported, which allow significant new insights regarding charge transport at domain walls in ErMnO3. In one set of experiments, KPFM is used to spatially map the Hall potential, developed at the surface of polished single crystals. These maps provide direct experimental evidence that n‐type head‐to‐head domain walls arise in otherwise p‐type material. In another set of experiments, the geometry for current flow is restricted, by cutting sub‐micron thick lamellar slices of ErMnO3 (using a Focused Ion Beam microscope). Separate contacts are made to n and p‐type walls and the potential profiles, when driving source‐drain currents, are measured (again using KPFM). Current‐electric field functions showed Ohmic behaviour for p‐type walls, with an intrinsic room temperature conductivity value of ≈0.4Sm−1. The n‐type walls showed non‐Ohmic behaviour and a significantly lower conductivity, supporting the prediction that electrons are in a polaronic state; an upper bound for the room temperature conductivity of the domains themselves is ≈6 × 10−6Sm−1 at 0.1 MVm−1.

Abstract The distribution of density of states (DOS) holds fundamental importance in determining charge transport within organic field–effect transistors (OFETs). Herein, the modulation of DOS distribution in OFET devices is demonstrated by altering the chain conformation of the polymer dielectrics. A rapid film‐formation technique, specifically the spin‐casting method, is used to fabricate the dielectric layer using poly(methyl methacrylate) (PMMA). This method allows for the retention of some memory of the chain conformations from the solution to the resulting dry film. This memory effect is employed to prepare thin PMMA films with different local chain conformations by adjusting the quality of the solvent. Good solvent forms solidified films with a reduced amount of gauche conformer in the PMMA chain, resulting in a narrow DOS distribution width. Consequently, the device exhibited enhanced charge mobility and a reduced subthreshold swing. The observed change in the width of the DOS distribution can be attributed to the alteration of the local energy state of the semiconductor, induced by the local chain conformation of PMMA dielectrics through electrostatics and steric interactions.

The charge carrier mobility in tris(4‐carbazoyl‐9‐ylphenyl)amine (TCTA), a host and hole transport material typically used in organic light‐emitting diodes (OLEDs), is measured using charge carrier electrical injection metal–insulator–semiconductor charge extraction by linearly increasing voltage (i‐MIS‐CELIV). By employing the injection current i‐MIS‐CELIV method, charge transport at time scales shorter than the transit times typically observed in standard MIS‐CELIV is measured. The i‐MIS‐CELIV technique enables the experimental measurement of unequilibrated and pretrapped charge carriers. Through a comparison of injection and extraction current transients obtained from i‐MIS‐CELIV and MIS‐CELIV, it is concluded that hole trapping is negligible in evaporated neat films of TCTA within the time‐scales relevant to the operational conditions of optoelectronic devices, such as OLEDs. Furthermore, photocarrier generation in conjunction with i‐MIS‐CELIV (photo‐i‐MIS‐CELIV) to quantify the properties of charge injection from the electrode to the semiconductor of the MIS devices is utilized. Based on the photo‐i‐MIS‐CELIV measurements, it is observed that the contact resistance does not limit the injection current at the TCTA/molybdenum oxide/silver interface. Therefore, when TCTA is employed as the hole transport/electron‐blocking layer in OLEDs, it does not significantly reduce the injection current and remains compatible with the high injection current densities required for efficient OLED operation.

Abstract Thermoelectric (TE) charge transport in organic TE nanocomposite systems is a critical consideration in designing high‐performance TE materials. Here, the relationship between the TE properties and energy structure of conducting polymer/quantum dot (QD) nanocomposites is systematically investigated by developing a potential wall or potential well in poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with CdTe QDs. The added QDs are primarily distributed within the electrically insulating PSS shell and act as stepping stones for charge transport between PEDOT‐rich grains. The embedded QDs generate an energy‐filtering effect, which is induced by both potential wall and potential well states established by the QDs in the PEDOT:PSS films. The induced energy‐filtering effect increases the Seebeck coefficient S with limited loss of electrical conductivity σ, thereby overcoming the TE trade‐off relation S ∝ σ −1/4. The energy‐filtering effect is optimized by carefully controlling the QD size. The PEDOT:PSS/QD nanocomposite containing the smallest QDs exhibits a power factor of 173.8 µW m−1 K−2, which is 80% larger than the value for the pristine PEDOT:PSS film. This work suggests a strategy for designing TE nanocomposites with improved TE performance and emphasizes the importance of fine‐tuning the interfacial energy gap to achieve an effective energy‐filtering effect.

Herein, a route to produce highly electrically conductive doped hydroxymethyl functionalized poly(3,4-ethylenedioxythiophene) (PEDOT) films, termed PEDOT(OH) with metal-like charge transport properties using a fully solution processable precursor polymer is reported. This is achieved via an ester-functionalized PEDOT derivative [PEDOT(EHE)] that is soluble in a range of solvents with excellent film-forming ability. PEDOT(EHE) demonstrates moderate electrical conductivities of 20-60 S cm-1 and hopping-like (i.e., thermally activated) transport when doped with ferric tosylate (FeTos3 ). Upon basic hydrolysis of PEDOT(EHE) films, the electrically insulative side chains are cleaved and washed from the polymer film, leaving a densified film of PEDOT(OH). These films, when optimally doped, reach electrical conductivities of ≈1200 S cm-1 and demonstrate metal-like (i.e., thermally deactivated and band-like) transport properties and high stability at comparable doping levels.

Epitaxially-fused superlattices of colloidal quantum dots (QD epi-SLs) may exhibit electronic minibands and high-mobility charge transport, but electrical measurements of epi-SLs have been limited to large-area, polycrystalline samples in which superlattice grain boundaries and intragrain defects suppress/obscure miniband effects. Systematic measurements of charge transport in individual, highly-ordered epi-SL grains would facilitate the study of minibands in QD films. Here, we demonstrate the air-free fabrication of microscale field-effect transistors (μ-FETs) with channels consisting of single PbSe QD epi-SL grains (2-7 μm channel dimensions) and analyze charge transport in these single-grain devices. The eight devices studied show p-channel or ambipolar transport with a hole mobility as high as 3.5 cm2 V-1 s-1 at 290 K and 6.5 cm2 V-1 s-1 at 170-220 K, one order of magnitude larger than that of previous QD solids. The mobility peaks at 150-220 K, but device hysteresis at higher temperatures makes the true mobility-temperature curve uncertain and evidence for miniband transport inconclusive.

Abstract The phenomenon of current–voltage hysteresis observed in perovskite-based optoelectronic devices is a critical issue that complicates the accurate assessment of device parameters, thereby impacting performance and applicability. Despite extensive research efforts aimed at deciphering the origins of hysteresis, its underlying causes remain a subject of considerable debate. By employing nanoscale investigations to elucidate the relationship between hysteresis and morphological characteristics, this study offers a detailed exploration of photocurrent–voltage hysteresis at the nanoscale within perovskite optoelectronic devices. Through the meticulous analysis of localized I–V curve arrays, our research identifies two principal hysteresis descriptors, uncovering a predominantly inverted hysteresis pattern in 87% of the locations examined. This pattern is primarily attributed to the energetic barrier encountered at the interface between the probe and the perovskite material. Our findings underscore the pronounced heterogeneity and grain-dependent variability inherent in hysteresis behavior, evidenced by an average Hysteresis Index value of 0.24. The investigation suggests that the localized hysteresis phenomena cannot be exclusively attributed to either photocharge collection processes or organic cation migration at grain boundaries. Instead, it appears significantly influenced by localized surface trap states, which play a pivotal role in modulating electron and hole current dynamics. By identifying the key factors contributing to hysteresis, such as localized surface trap states and their influence on electron and hole current dynamics, our findings pave the way for targeted strategies to mitigate these effects. This includes the development of novel materials and device architectures designed to minimize energy barriers and enhance charge carrier mobility, thereby improving device performance and longevity. This breakthrough in understanding the microscale mechanisms of hysteresis underscores the critical importance of surface/interface defect trap passivation in mitigating hysteretic effects, offering new pathways for enhancing the performance of perovskite solar cells.

The utilization of single molecule electronic devices represents a significant avenue toward advancing next-generation circuits. Recent investigations have notably augmented our understanding of the optoelectronic characteristics exhibited by diverse single molecule materials. This comprehensive review underscores the latest progressions in probing photo-induced electron transport behaviors within molecular junctions. Encompassing both single molecule and self-assembled monolayer configurations, this review primarily concentrates on unraveling the fundamental mechanisms and guiding principles underlying photo-switchable devices within single molecule junctions. Furthermore, it presents an outlook on the obstacles faced and future prospects within this dynamically evolving domain.

We theoretically study the 2D Su-Schrieffer-Heeger model in the context of Floquet topological insulators (FTIs). FTIs are systems which undergo topological phase transitions, governed by Chern numbers, as a result of time reversal symmetry (TRS) breaking by a time periodic process. In our proposed model, the condition of TRS breaking is achieved by circularly polarized light irradiation. We analytically show that TRS breaking is forbidden in the absence of second order neighbors hopping. In the absence of light irradiation, we identify a symmetry-protected degeneracy and prove the appearance of a flat band along a specific direction in the momentum space. Furthermore, we employ a novel method to show that the four unit cell atoms, in the absence of irradiation, can be interpreted as conserved spin states. With the breaking of TRS via light irradiation, these spin states are no longer conserved, leading to the emergence of chiral edge states. We also show how the interplay between the TRS breaking and dimerization leads to some complex topological phase transitions. The validity of our findings is substantiated through Chern numbers, spectral properties, localization of chiral edge states and simulations of quantum Hall transport. Our model is suitable not only for condensed matter (materials), but also for cold gases trapped in optical lattices or topolectrical circuits.

Space-charge-limited current (SCLC) measurements are commonly employed to characterize charge-transport properties of semiconductors used in nextgeneration thin-film optoelectronics, such as organic p-conjugated small molecules and polymers, and metal-halide perovskites. Despite the widespread adoption of the method, there is no community-wide consensus around how SCLC measurements should be performed, nor how the data should be analyzed and reported. While it is common to report device characteristics by employing a simplistic analytical model for fitting a single J-V curve obtained froma solitary device at room temperature--sometimes in a very select voltage range--expectedly, such an approach will often not give an accurate picture of the underlying physics. On that account, we here aim to highlight the importance of reporting values extracted from not just a solitary single-carrier device measured at room temperature, but from devices with different thicknessesmeasured at varying device temperature. We also highlight how the choice of device thickness is especially critical in determining what device andmaterial characteristics can be extracted from SCLC measurements, and how this choice can greatly affect the conclusions drawn about the probed semiconducting material. While other factors could affect the outcome of an SCLC measurement and the subsequent analysis, we hope that the topics covered in this article will result in overall improved charge-transport characterization of thin-film semiconductors and initiate a broader discussion into SCLC metrology at large. [ABSTRACT FROM AUTHOR]

One of the few undisputed facts about hole-doped high-Tc cuprates is that their superconducting gap Δ has d-wave symmetry. According to 'dirty' d-wave BCS theory, even structural (non-magnetic) disorder can suppress Δ, the transition temperature Tc and the superfluid density ps. The degree to which the latter is affected by disorder depends on the nature of the scattering. By contrast, Tc is only sensitive to the total elastic scattering rate (as estimated from the residual resistivity p0) and should follow the Abrikosov-Gor'kov pair-breaking formula. Here, we report a remarkable robustness of Tc in a set of Bi2201 single crystals to large variations in p0. We also survey an extended body of data, both recent and historical, on the LSCO family which challenge key predictions from dirty d-wave theory. We discuss the possible causes of these discrepancies, and argue that either we do not understand the nature of disorder in cuprates, or that the dirty d-wave scenario is not an appropriate framework. Finally, we present an alternative (non-BCS) scenario that may account for the fact that the superconducting dome in Tl2201 extends beyond that seen in Bi2201 and LSCO and suggest ways to test the validity of such a scenario. [ABSTRACT FROM AUTHOR]

Electrical measurements are performed on a bottom‐gate bottom‐contact organic thin‐film transistor with 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl) anthradithiophene (diF‐TES ADT) (diF‐TES ADT) as the active layer, varying the relative humidity of the environment surrounding the transistor. The results strongly indicate that water negatively impacts the electrical performance of the transistor and that the ingress of water is dynamic provided that the organic semiconductor layer is not encapsulated. It is found that the change can be reversed and the performance restored by removing the source of water. The drain current and threshold voltage of the transistor varied linearly when the relative humidity is changed from 35% to 7%, suggesting that the transistor can be used as a humidity sensor. [ABSTRACT FROM AUTHOR]

Swift heavy ion (SHI) irradiated LaMnO 3 /La 0.7 Ca 0.3 MnO 3 (LMO/LCMO) interfaces have been investigated to understand their charge transport and conduction mechanisms. Prominent effect of ion fluence has been discussed for the interface resistivity behaviors and metal to insulator phase transition for LMO/LCMO interfaces on the bases of lattice strain, crystalline granular state, crystalline imperfection, average grain size, grain boundary density and rms surface roughness. Field effect configuration (FEC) has been employed to study the interesting modifications in the irradiated LMO/LCMO interface resistivity under different applied electric fields to understand the depletion region, free charge carrier density, ferromagnetic phase fractions and crystal field based distortions. A Phenomenological percolation model has been employed to understand the role of phase separation in governing the charge conduction processes across LMO/LCMO interfaces. [ABSTRACT FROM AUTHOR]

Graphene–silicon Schottky diodes are intriguing devices that straddle the border between classical models and two-dimensional ones. Many papers have been published in recent years studying their operation based on the classical model developed for metal–silicon Schottky diodes. However, the results obtained for diode parameters vary widely in some cases showing very large deviations with respect to the expected range. This indicates that our understanding of their operation remains incomplete. When modeling these devices, certain aspects strictly connected with the quantum mechanical features of both graphene and the interface with silicon play a crucial role and must be considered. In particular, the dependence of the graphene Fermi level on carrier density, the relation of the latter with the density of surface states in silicon and the coupling between in-plane and out-of-plane dynamics in graphene are key aspects for the interpretation of their behavior. Within the thermionic regime, we estimate the zero-bias Schottky barrier height and the density of silicon surface states in graphene/type-p silicon diodes by adapting a kown model and extracting ideality index values close to unity. The ohmic regime, beyond the flat band potential, is modeled with an empirical law, and the current density appears to be roughly proportional to the electric field at the silicon interface; moreover, the graphene-to-silicon electron tunneling efficiency drops significantly in the transition from the thermionic to ohmic regime. We attribute these facts to (donor) silicon surface states, which tend to be empty in the ohmic regime. [ABSTRACT FROM AUTHOR]

Ternary organic solar cells contain a single three-component photoactive layer with a wide absorption window, achieved without the need for multiple stacking. However, adding a third component into a well-known binary blend can influence the energetics, optical window, charge carrier transport, crystalline order and conversion efficiency. In the form of binary blends, the low-bandgap regioregular polymer donor poly(3-hexylthiophene-2,5-diyl), known as P3HT, is combined with the acceptor PC61BM, an inexpensive fullerene derivative. Two different non-fullerene acceptors (ITIC and eh-IDTBR) are added to this binary blend to form ternary blends. A systematic comparison between binary and ternary systems was carried out as a function of the thermal annealing temperature of organic layers (100 °C and 140 °C). The power conversion efficiency (PCE) is improved due to increased fill factor (FF) and open-circuit voltage (Voc) for thermal-annealed ternary blends at 140 °C. The transport properties of electrons and holes were investigated in binary and ternary blends following a Space-Charge-Limited Current (SCLC) protocol. A favorable balanced hole–electron mobility is obtained through the incorporation of either ITIC or eh-IDTBR. The charge transport behavior is correlated with the bulk heterojunction (BHJ) morphology deduced from atomic force microscopy (AFM), contact water angle (CWA) measurement and 2D grazing-incidence X-ray diffractometry (2D-GIXRD). [ABSTRACT FROM AUTHOR]

During the operation progress of solid oxide fuel cell (SOFC), the performance and endurance are two major concerns significantly affected by gas flowing, charge transport, and chemical reaction. This paper presents a thorough research on the key parameters related to syngas and charge transport in the SOFC to reveal the intrinsic influence mechanism, including electro conductibility, gas mixture concentration, CH4 component ratio, temperature, and anode thickness, which is instrumental in improving the operational efficiency and applicability of SOFC. Firstly, the theoretical models of charge transport and multi-component mass transfer are established, respectively, and the two are coupled using the reaction rate calculation method. Then, employing an innovative combination of the representative elementary volume (REV) scale lattice Boltzmann method (LBM) and the finite-difference LBM, the potential and multi-component gases distributions are simulated to calculate the evaluated indicators, namely activation and concentration overpotential. Finally, considering various operational conditions, the simulation experiments are conducted to investigate the parametric effect on the performance of SOFC fueled by syngas. The results demonstrate that compared to the direct reforming way, the external syngas with lower CH4 component ratio is more favorable to the SOFC and the optimal ratio should be controlled within 0.2. The higher concentration of gas mixture and lower anode thickness both contribute to weakening the effect of concentration polarization. Especially, the performance of SOFC is improved when the concentration is 15 mol‧m−3 and the anode thickness is below 1.05 mm. With the increment of conductivity and operating temperature, the consumption of H2 gradually increases, enhancing the efficiency of reaction gas and reducing the economic cost. And the optimal operation temperature of SOFC is about 1073 K. Moreover, the anode thickness is a trade-off between the electrochemical reaction conditions of anode and cathode, as its variation affects both of them. [ABSTRACT FROM AUTHOR]

Since the first applications of nanohoops in organic electronics appear promising, the time has come to go deeper into their rational design in order to reach high‐efficiency materials. To do so, systematic studies dealing with the incorporation of electron‐rich and/or electron‐poor functional units on nanohoops have to be performed. Herein, the synthesis, the electrochemical, photophysical, thermal, and structural properties of two [4]cyclo‐2,7‐carbazoles, [4]C‐Py‐Cbz, and [4]C‐Pm‐Cbz, possessing electron‐withdrawing units on their nitrogen atoms (pyridine or pyrimidine) are reported. The synthesis of these nanohoops is first optimized and a high yield above 50% is reached. Through a structure‐properties relationship study, it is shown that the substituent has a significant impact on some physicochemical properties (eg HOMO/LUMO levels) while others are kept unchanged (eg fluorescence). Incorporation in electronic devices shows that the most electrically efficient Organic Field‐Effect transistors are obtained with [4]C‐Py‐Cbz although this compound does not present the best‐organized semiconductor layer. These experimental data are finally confronted with the electronic couplings between the nanohoops determined at the DFT level and have highlighted the origin in the difference of charge transport properties. [4]C‐Py‐Cbz has the advantage of a more 2D‐like transport character than [4]C‐Pm‐Cbz, which alleviates the impact of defects and structural organization. [ABSTRACT FROM AUTHOR]

The phenomenon of current–voltage hysteresis observed in perovskite-based optoelectronic devices is a critical issue that complicates the accurate assessment of device parameters, thereby impacting performance and applicability. Despite extensive research efforts aimed at deciphering the origins of hysteresis, its underlying causes remain a subject of considerable debate. By employing nanoscale investigations to elucidate the relationship between hysteresis and morphological characteristics, this study offers a detailed exploration of photocurrent–voltage hysteresis at the nanoscale within perovskite optoelectronic devices. Through the meticulous analysis of localized I–V curve arrays, our research identifies two principal hysteresis descriptors, uncovering a predominantly inverted hysteresis pattern in 87% of the locations examined. This pattern is primarily attributed to the energetic barrier encountered at the interface between the probe and the perovskite material. Our findings underscore the pronounced heterogeneity and grain-dependent variability inherent in hysteresis behavior, evidenced by an average Hysteresis Index value of 0.24. The investigation suggests that the localized hysteresis phenomena cannot be exclusively attributed to either photocharge collection processes or organic cation migration at grain boundaries. Instead, it appears significantly influenced by localized surface trap states, which play a pivotal role in modulating electron and hole current dynamics. By identifying the key factors contributing to hysteresis, such as localized surface trap states and their influence on electron and hole current dynamics, our findings pave the way for targeted strategies to mitigate these effects. This includes the development of novel materials and device architectures designed to minimize energy barriers and enhance charge carrier mobility, thereby improving device performance and longevity. This breakthrough in understanding the microscale mechanisms of hysteresis underscores the critical importance of surface/interface defect trap passivation in mitigating hysteretic effects, offering new pathways for enhancing the performance of perovskite solar cells. [ABSTRACT FROM AUTHOR]