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In recent years, transition metal dichalcogenides have received great attention since they can be prepared as two-dimensional semiconductors, presenting heterodesmic structures incorporating strong in-plane covalent bonds and weak out-of-plane interactions, with an easy cleavage/exfoliation in single or multiple layers. In this context, molybdenite, the mineralogical name of molybdenum disulfide, MoS2, has drawn much attention because of its very promising physical properties for optoelectronic applications, in particular a band gap that can be tailored with the material's thickness, optical absorption in the visible region and strong light–matter interactions due to the planar exciton confinement effect. Despite this wide interest and the numerous experimental and theoretical articles in the literature, these report on just one or two specific features of bulk and layered MoS2 and sometimes provide conflicting results. For these reasons, presented here is a thorough theoretical analysis of the different aspects of bulk, monolayer and bilayer MoS2 within the density functional theory (DFT) framework and with the DFT-D3 correction to account for long-range interactions. The crystal chemistry, stiffness, and electronic, dielectric/optical and phonon properties of single-layered, bilayered and bulk molybdenite have been investigated, to obtain a consistent and detailed set of data and to assess the variations and cross correlation from the bulk to single- and double-layer units. The simulations show the indirect–direct transition of the band gap (K–K′ in the first Brillouin zone) from the bulk to the single-layer structure, which however reverts to an indirect transition when a bilayer is considered. In general, the optical properties are in good agreement with previous experimental measurements using spectroscopic ellipsometry and reflectivity, and with preliminary theoretical simulations.

In the present paper, we provide a detailed theoretical investigation on fundamental thermodynamic, thermomechanical, and electronic properties of wurtzite ZnS between 0–20 GPa and 0–2000 K, obtained by ab initio density functional theory and the B3LYP functional. Several properties, such as phonon dispersion relations, elastic and piezoelectric constants, and thermodynamic and thermoelastic behaviors were calculated and reported. The analysis of the data via volume-integrated third-order Birch-Murnaghan fitting resulted in K0 = 72.17(4) GPa, K′ = 3.87(1), and V0 = 85.781(1) Å3 at T = 0 K. The Born criteria for the mechanical stability of the mineral phase showed that wurtzite is unstable above about 19 GPa in static conditions. We calculated a direct bandgap for wz-ZnS of 4.86 eV at zero compression, which became an indirect one by increasing pressure above 17 GPa. The results are in good agreement with the experimental and theoretical ones reported in the literature, and further extend the knowledge of an important zinc sulfide phase, for both geological and industrial applications.

The recently described monodimensional hybrid pseudo-perovskite ((CH3)3SO)PbI3 exhibits complete Pb2+/Bi3+ miscibility in the B site. Heterovalent substitution imposes that charge-compensating defects are introduced in the lattice as well. This paper reports the energetics of point defects and the interaction between charge-compensating defects that occur upon Bi3+ doping in ((CH3)3SO)PbI3. Periodic DFT simulations were employed to analyze the formation energy of Pb2+ vacancies, (CH3)3SO+ vacancies, iodide vacancies, or the insertion of interstitial iodide ions. Solid solutions with a large Bi3+ content were modeled considering different charge compensation defects (Pb2+ vacancies, (CH3)3SO+ vacancies, and interstitial iodide) to consider electrical neutrality. Both the formation energy evaluation and the structural parameters after relaxation are in very good agreement with available experimental data (both X-ray diffraction and absorption spectroscopy), confirming that Pb2+ vacancies are indeed the primary ionic charge-compensation mechanism leading to solid solutions described by the formula ((CH3)3SO)3Pb3xBi2(1-x)V(1-x)I9 (0 < x < 1), where V indicates a B site vacancy. As a consequence of the complete miscibility, the defect concentration at intermediate compositions is considerable, and it is probably responsible for various peculiar structural effects observed, e.g., in ((CH3)3SO)3Pb0.99Bi1.34I9, which are related to short-range order phenomena in the chain composition. Atomistic simulations were then carried out to estimate defect-defect interactions as a function of their respective positions inside the linear PbI6/BiI6 octahedral chains. The resulting bond energies for atom pairs and triads effectively explain the relative stability of defect clusters. This approach is expected to shed light on the short-range order in this class of doped materials, but it can be extended to other structures as well. The understanding of defect structures and control of structural and electronic properties have implications for the engineering of doped materials, which find vast applications in optoelectronic devices.

In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grown by physical vapor deposition on Sb2Te3 and on Ge2Sb2Te5 layers. The two heterostructures were characterized in situ by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS) during the formation of the interface between the first and the second layer (top GGST film). The evolution of the composition across the heterostructure interface and information on interdiffusion were obtained. We found that, for both cases, the final composition of the GGST layer was close to Ge2SbTe2 (GST212), which is a thermodynamically favorable off-stoichiometry GeSbTe alloy in the Sb-GeTe pseudobinary of the ternary phase diagram. Density functional theory calculations allowed us to calculate the density of states for the valence band of the amorphous phase of GST212, which was in good agreement with the experimental valence bands measured in situ by UPS. The same heterostructures were characterized by X-ray diffraction as a function of the annealing temperature. Differences in the crystallization process are discussed on the basis of the photoemission results.

Classical molecular dynamics simulations are used to investigate the 3D evolution of stacking faults (SFs), including the partial dislocation (PD) loops enclosing them, during growth of 3C-SiC layers on Si(001). It is shown that the evolution of single PD loops releasing tensile strain during the initial carbonization stage, commonly preceding 3C-SiC deposition, leads to the formation of experimentally observed V- or Δ-shaped SFs, the key role being played by the differences in the mobilities between Si- and C-terminated PD segments. Nucleation in the adjacent planes of PD loops takes place at later stage of 3C-SiC deposition, when slightly compressive-strain conditions are present. It is shown that such a process very efficiently decreases the elastic energy of the 3C-SiC crystal. The maximum energy decrease is obtained via the formation of triple SFs with common boundaries made up by PD loops yielding a zero total Burgers vector. Obtained results explain the experimentally observed relative abundance of compact microtwin regions in 3C-SiC layers as compared with the other SF-related defects.

International audience; Molybdenum dithiocarbamates (MoDTCs) are a class of lubricant additives widely employed in automotives. Most of the studies concerning MoDTC take into account the dimeric structures because of their industrial relevance, with the mononuclear compounds usually neglected, because isolating and characterizing subgroups of MoDTC molecules are generally difficult. However, the byproducts of the synthesis of MoDTC can impact the friction reduction performance at metallic interfaces, and the effect of mononuclear MoDTC (mMoDTC) compounds in the lubrication has not been considered yet in the literature. In this study, we consider for the first time the impurities of MoDTC consisting of mononuclear compounds and combine experimental and computational techniques to elucidate the interaction of these impurities with binuclear MoDTC in commercial formulations. We present a preliminary strategy to separate a commercial MoDTC product in chemically different fractions. These fractions present different tribological behaviors depending on the relative amount of mononuclear and binuclear complexes. The calculations indicate that the dissociation mechanism of mMoDTC is similar to the one observed for the dimeric structures. However, the different chemical properties of mMoDTC impact the kinetics for the formation of the beneficial molybdenum disulfide (MoS2) layers, as shown by the tribological experiments. These results help to understand the functionality of MoDTC lubricant additives, providing new insights into the complex synergy between the different chemical structures.

The crossing of stacking faults (SFs) (namely dislocation forests) in 3C-SiC is experimentally probed to cause detrimental effects on the electronic properties of the layer. By means of classical molecular dynamics simulations, for the first time the evolution of two crossing partial dislocation loops is shown, revealing the mechanism that leads to the formation of a complex defect at their intersection. The obtained atomistic structure is then further refined by ab initio calculations, revealing that this defect does not cause defect states within the gap of the pristine material. The case of the intersection of two double-dislocation loops, that is, involving double SFs, in the hypothesis that the evolution follows the same mechanism found for single-dislocation loops is also investigated. Contrary to the single-plane intersection, the simulations reveal that the junction formed by double-dislocation loops does cause intragap states, thus suggesting detrimental effects on the electronic properties of the 3C-SiC layers.

Conversion of CO2 to reduced products is a promising route to alleviate irreversible climate change. Here we report the synthesis of a Co-based phthalocyanine with pyridine moieties (CoPc-Pyr), which is supported on a carbon electrode and shows Faradaic efficiency ∼90% for CO at 490 mV of overpotential (-0.6 V vs reversible hydrogen electrode (RHE)). In addition, its catalytic activity at -0.7 V versus RHE surpasses other Co-based molecular and metal-organic framework catalysts for CO2 reduction at this bias. Density functional theory calculations show that pyridine moieties enhance CO2 adsorption and electron affinity of the Co center by an inductive effect, thus lowering the overpotential necessary for CO2 conversion. Our study shows that CoPc-Pyr reduces CO2 at lower overpotential and with higher activity than noble metal electrodes, such as silver.

Since its discovery, graphene has been the object of study for several and manifold applications, ranging from photocatalysis to mechanics and electronics of materials. However, the use of pure graphene in certain opto- and microelectronic applications is sometimes limited because of its zero band gap. Among the different methods to widen the band gap, in the present work the attention is focused on the so-called van der Waals composites (or heterostructures, or heterojunctions), namely the stacking of two monolayers of different materials that are held together by weak van der Waals interactions. An interesting composite is the graphene/molybdenite (MoS2) heterostructure, where the second material is a bidimensional semiconductor characterized by strong in-plane covalent bonds and weak out-of-plane interactions, which means that it is possible to exfoliate MoS2 into monolayers of atomic thickness. Also, from the crystallographic point of view, both graphene and the monolayer of molybdenite (MoS2-1H) have a 2D hexagonal lattice and their stacking could be structurally favourable. In this work, the electronic band structure and density of states, complex dielectric function and optical properties of the stacked van der Waals bilayer heterojunction graphene/MoS2-1H were calculated and compared to both the single monolayers of graphene and molybdenite, to understand how the interaction between the two materials may alter the above cited properties. The analysis of the band structure in this van der Waals composite clearly showed a small direct band gap related to the transition π → π ∗ (ca. 2.5 meV) in correspondence of the high symmetry point K. The heterojunction showed also, as expected, some important variations in the complex dielectric function and related properties in the visible-light spectral region. The results obtained in the present work could be of use for future development and applications of this kind and similar 2D composite materials with tailored electronic and optical properties.

In this article, we study the modification of the optical, chemical and electronic properties of graphene oxide (GO) during thermal reduction in ultra-high-vacuum by combining the results of several electron spectroscopies. We find that the fraction of oxygen moieties on the surface, as deduced from the evolution of C 1s core level in photoemission, is progressively reduced upon increasing the annealing temperature from 150 to 650 °C. The intensity of the CH stretching mode, associated with CH defects on GO surface and measured in the low energy region of electron energy loss spectra (EELS), decreases as a function of the annealing temperature. The removal or the reduction of such hydrogen or oxygen defects induces a restoration of sp2 carbon hybridization. The presence of such hybridization is confirmed by the capability to excite π -plasmon as observed in the EELS spectra. In particular we find a critical annealing temperature (Tann = 300 °C) at which π -plasmon excitation via electron scattering is accessible suggesting the formation of graphene-like domains with size comparable with the plasmon wavelength ( λ p ~ 5 nm). The linear dispersion of π -band close to Fermi level, as measured in UPS, confirms the formation of graphene-like domains.

A few layers of functionalized graphene (FLG) have been obtained by the oxidative unzipping reaction of single-walled carbon nanotubes. A detailed Scanning Tunneling Microscopy and Transmission Electron Microscopy study shows that several different morphologies are observed, depending on the substrate upon which they are deposited, thus providing useful hints for a real world application of these carbon nanostructures. In addition, a combined Scanning Tunneling Spectroscopy investigation has shown that the electronic properties of these FLG are affected by their functionalization degree, opening interesting perspectives for their use in sensor and biosensor devices. © Taylor & Francis Group, LLC.

Understanding and controlling the chemical reactivity of carbon nanotubes (CNTs) is a fundamental requisite to prepare novel nanoscopic structures with practical uses in materials applications. Here, we present a comprehensive microscopic and spectroscopic characterization of carbon nanotubes which have been chemically modified. Specifically, scanning tunneling microscopy ( STM) investigations of short-oxidized single-walled carbon nanotubes (SWNTs) functionalized with aliphatic chains via amide reaction reveal the presence of bright lumps both on the sidewalls and at the tips. The functionalization pattern is consistent with the oxidation reaction which mainly occurs at the nanotube tips. Thermogravimetric analysis (TGA), steady-state electronic absorption (UV-vis-NIR), and Raman spectroscopic studies confirm the STM observations.

The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide, a high-k dielectric material, preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory calculations give additional insight into the reaction processes and help explaining the catalytic activity of the copper oxide surface.

We have measured bulk sensitive photoemission spectra of pure vanadium sesquioxide (V2O3) in its metallic phase as a function of different surface preparations. We observe the presence of a clear coherent peak in the vicinity of the Fermi level and of satellites intensities at the V 2p core level. After scraping, the coherent intensities are almost completely suppressed in both core level and valence band. Our results suggest a remarkable change of the screening properties in strongly correlated systems when going from the surface to the volume.

We have measured bulk sensitive photoemission spectra of pure vanadium sesquioxide (V2O3) in its metallic phase as a function of different surface preparations. We observe the presence of a clear coherent peak in the vicinity of the Fermi level and of satellites intensities at the V 2p core level. After scraping, the coherent intensities are almost completely suppressed in both core level and valence band. Our results suggest a remarkable change of the screening properties in strongly correlated systems when going from the surface to the volume.

We present a comprehensive computational study on the properties of face-centered cubic and hexagonal chalcogenide Ge2Sb2Te5. We calculate the electronic structure using density functional theory (DFT); the obtained density of states (DOS) compares favorably with experiments, also looking suitable for transport analysis. Optical constants including refraction index and absorption coefficient capture major experimental features, aside from an energy shift owed to an underestimate of the band gap that is typical of DFT calculations. We also compute the phonon DOS for the hexagonal phase, obtaining a speed of sound and thermal conductivity in good agreement with the experimental lattice contribution. The calculated heat capacity reaches ~ 1.4 x 106 J/(m3 K) at high temperature, in agreement with experimental data, and provides insight into the low-temperature range (< 150 K), where data are unavailable., 19 pages, 8 figures