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Dielectric materials with excellent thermal stability, mechanical properties, and thermal conductivity are highly desirable for advanced electronics and electrical equipment. However, it remains a significant challenge to develop a single material with these properties. Here we describe a new strategy to prepare dielectric paper by combining one-dimensional aramid nanofiber (ANF) with two-dimensional fluorinated graphene (F-graphene) through a vacuum-assisted filtration method. The obtained ANF/F-graphene paper exhibits a low dielectric constant of 1.92 at 103 Hz and its electrical breakdown strength is 17.6% higher than that of the neat ANF paper, owing to the presence of F-graphene, which significantly suppresses the accumulation of space charge in the prepared paper. Moreover, high mechanical strength (>200 MPa), thermal conductivity (6.29 Wm−1K−1), and thermal decomposition temperature (>500°C) are simultaneously achieved for the ANF/F-graphene paper. These findings highlight the fabrication of multifunctional dielectric materials and broaden their practical applications in the field of high-temperature electronics and devices. [ABSTRACT FROM AUTHOR]

Polymer-based dielectric films with desirable heat dissipation property hold great promise as thermal management materials in advanced electronics and high power devices. Herein, we report a new strategy for preparing thermally conductive films by synergistically combining one-dimensional (1D) aramid nanofiber (ANF) with 2D edge-hydroxylated boron nitride nanosheet (OH-BNNS) via a vacuum-assisted self-assembly technique. The obtained ANF/OH-BNNS film exhibits an ultrahigh in-plane thermal conductivity of 32.3 W m−1K−1 at 40 wt% BNNS-OH loading, which is 3530% greater than that of the pure ANF film. The excellent thermal conductivity results from the special 'brick-and-mortar' layered structure of ANF/OH-BNNS, in which the increased contacting and overlapping of OH-BNNS promotes the formation of the thermal conduction pathways. In addition, the rigid ANFs act as bridges linking OH-BNNS by favorable hydrogen bonding interactions, which efficiently enhance phonon propagation and stress transfer in the film. Moreover, the ANF/OH-BNNS film simultaneously shows low dielectric loss (~0.03), high tensile strength (~88 MPa), and a high decomposition temperature (>510 °C). We believe that these findings are of great importance for the fabrication and practical application of thermal management materials in high-temperature electronics and devices. [ABSTRACT FROM AUTHOR]