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• A layered materials memristor was introduced. • Memristors characteristic was modulated by hexazinone. • Gradual current changes were took on. • The memory device demonstrate programmable peculiarities. The nonvolatile resistive switching memory devices and the effect of adsorbed small molecule hexazinone have been investigated. Resistive switching behaviour of Co-Al layered double hydroxides (Co-Al LDHs)-based is gradually varied. At the same time, when Co-Al LDHs adsorbed the small molecule hexazinone, its resistive switching behaviour changed suddenly. Both memristors exhibit non-volatile data storage and good data retention characteristics. The influence of small molecule hexazinone on microcarrier transport was analyzed. This research manifests the promising potential of nanocomposite materials adsorbed electroactive small molecules in rectifying the resistive switching properties and provides some ideas for designing advanced devices of nanocomposite memristors. [ABSTRACT FROM AUTHOR]

We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While different, Co–Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications. [ABSTRACT FROM AUTHOR]