1. On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma
- Author
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Kim, Mansu, Min, Nam-Ki, Yun, Sun Jin, Lee, Hyun Woo, Efremov, Alexander, and Kwon, Kwang-Ho
- Subjects
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ETCHING , *THIN films , *SOLID state electronics , *ELECTRICAL engineering - Abstract
Abstract: The etching mechanism of ZrO2 thin films in BCl3/Ar plasma was investigated using a combination of experimental and modeling methods. It was found that an increase in the Ar mixing ratio causes the non-monotonic behavior of the ZrO2 etch rate which reaches a maximum of 41.4nm/min at about 30–35% Ar. Langmuir probe measurements and plasma modeling indicated the noticeable influence of a BCl3/Ar mixture composition on plasma parameters and active species kinetics that results in non-linear changes of both densities and fluxes for Cl, BCl2 and . From the model-based analysis of surface kinetics, it was shown that the non-monotonic behavior of the ZrO2 etch rate can be associated with the concurrence of chemical and physical pathways in ion-assisted chemical reaction. [Copyright &y& Elsevier]
- Published
- 2008
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