1. High hydrogen sensitivity of vertically standing layered MoS2/Si heterojunctions.
- Author
-
Hao, Lanzhong, Liu, Yunjie, Gao, Wei, Liu, Yanmin, Han, Zhide, Yu, Lianqing, Xue, Qingzhong, and Zhu, Jun
- Subjects
- *
MOLYBDENUM sulfides , *HYDROGEN , *SILICON , *THIN films , *SUBSTRATES (Materials science) , *MAGNETRON sputtering , *HETEROJUNCTIONS , *X-ray diffraction - Abstract
Molybdenum disulfide (MoS 2 ) thin films are deposited onto silicon (Si) substrates using magnetron sputtering technique. Raman spectra show that the out-of-plane vibration is preferentially excited for the film. X-ray diffraction patterns further illustrate that the deposited MoS 2 films have the preferential [100] orientation. These results demonstrate that the unit layers of S Mo S in the film are perpendicular to the substrate. This can supply high-speed paths for the transportation of the electron carriers along the out-of-plane orientation. Due to the unique vertically standing layered structure of the MoS 2 film, the fabricated MoS 2 /Si sensor device exhibits excellent hydrogen (H 2 ) sensing properties. The device performance can be featured by a high sensitivity (687.3% under 100.0 ppm H 2 ), high detection resolution (a 1.0-ppm level), as well as fast response and recovery, and good reversibility. The sensing mechanisms were discussed based on the microstructural characteristics of the MoS 2 film and the energy-band alignment near the MoS 2 /Si interface. The MoS 2 /Si heterojunctions proposed in this work might open new avenues for the development of future high-performance sensor devices. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF