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476 results on '"Arbiol, Jordi"'

1. Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices

Author

Olšteins, Dāgs, Nagda, Gunjan, Carrad, Damon J., Beznasyuk, Daria V., Petersen, Christian E. N., Martí-Sánchez, Sara, Arbiol, Jordi, and Jespersen, Thomas Sand

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.

Published
2024
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2. Low disorder and high valley splitting in silicon

Author

Degli Esposti, Davide, Stehouwer, Lucas E. A., Gül, Önder, Samkharadze, Nodar, Déprez, Corentin, Meyer, Marcel, Meijer, Ilja N., Tryputen, Larysa, Karwal, Saurabh, Botifoll, Marc, Arbiol, Jordi, Amitonov, Sergey V., Vandersypen, Lieven M. K., Sammak, Amir, Veldhorst, Menno, and Scappucci, Giordano

Published
2024
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3. Low disorder and high valley splitting in silicon

Author

Esposti, Davide Degli, Stehouwer, Lucas E. A., Gül, Önder, Samkharadze, Nodar, Déprez, Corentin, Meyer, Marcel, Meijer, Ilja N., Tryputen, Larysa, Karwal, Saurabh, Botifoll, Marc, Arbiol, Jordi, Amitonov, Sergey V., Vandersypen, Lieven M. K., Sammak, Amir, Veldhorst, Menno, and Scappucci, Giordano

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically-purified, strained quantum wells with high mobility of 3.14(8)$\times$10$^5$ cm$^2$/Vs and low percolation density of 6.9(1)$\times$10$^{10}$ cm$^{-2}$. These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) $\mu$eV/Hz$^{1/2}$ and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors.

Published
2023
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4. Nanoporous graphene-based thin-film microelectrodes for in vivo high-resolution neural recording and stimulation

Author

Viana, Damià, Walston, Steven T., Masvidal-Codina, Eduard, Illa, Xavi, Rodríguez-Meana, Bruno, del Valle, Jaume, Hayward, Andrew, Dodd, Abbie, Loret, Thomas, Prats-Alfonso, Elisabet, de la Oliva, Natàlia, Palma, Marie, del Corro, Elena, del Pilar Bernicola, María, Rodríguez-Lucas, Elisa, Gener, Thomas, de la Cruz, Jose Manuel, Torres-Miranda, Miguel, Duvan, Fikret Taygun, Ria, Nicola, Sperling, Justin, Martí-Sánchez, Sara, Spadaro, Maria Chiara, Hébert, Clément, Savage, Sinead, Arbiol, Jordi, Guimerà-Brunet, Anton, Puig, M. Victoria, Yvert, Blaise, Navarro, Xavier, Kostarelos, Kostas, and Garrido, Jose A.

Published
2024
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5. Cryogenic Multiplexing with Bottom-Up Nanowires

Author

Olšteins, Dāgs, Nagda, Gunjan, Carrad, Damon J., Beznasiuk, Daria V., Petersen, Christian E. N., Martí-Sánchez, Sara, Arbiol, Jordi, and Jespersen, Thomas Sand

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrated SAG NW circuits consisting of 512 channel multiplexer/demultiplexer pairs, incorporating thousands of interconnected SAG NWs operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increase the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical SAG quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future SAG quantum circuits., Comment: Main text and Supplementary Information

Published
2023
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13. Hard superconducting gap in germanium

Author

Tosato, Alberto, Levajac, Vukan, Wang, Ji-Yin, Boor, Casper J., Borsoi, Francesco, Botifoll, Marc, Borja, Carla N., Martí-Sánchez, Sara, Arbiol, Jordi, Sammak, Amir, Veldhorst, Menno, and Scappucci, Giordano

Published
2023
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40. Reversible K-ion intercalation in CrSe2 cathodes for potassium-ion batteries: combined operando PXRD and DFT studies.

Author

Li, Weihao, Döhn, Johannes, Chen, Jinyu, Dillenz, Manuel, Sotoudeh, Mohsen, Pickup, David M., Luo, Shunrui, Parmenter, Ryan, Arbiol, Jordi, Alfredsson, Maria, Chadwick, Alan V., Groß, Axel, Zarrabeitia, Maider, and Ganin, Alexey Y.

Abstract

In the pursuit of more affordable battery technologies, potassium-ion batteries (KIBs) have emerged as a promising alternative to lithium-ion systems, owing to the abundance and wide distribution of potassium resources. While chalcogenides are uncommon as intercalation cathodes in KIBs, this study's electrochemical tests on CrSe2 revealed a reversible K+ intercalation/deintercalation process. The CrSe2 cathode achieved a KIB battery capacity of 125 mA h g−1 at a 0.1C rate within a practical 1–3.5 V vs. K+/K operation range, nearly matching the theoretical capacity of 127.7 mA h g−1. Notably, the battery retained 85% of its initial capacity at a high 1C rate, suggesting that CrSe2 is competitive for high-power applications with many current state-of-the-art cathodes. In-operando PXRD studies uncovered the nature of the intercalation behavior, revealing an initial biphasic region followed by a solid-solution formation during the potassium intercalation process. DFT calculations helped with the possible assignment of intermediate phase structures across the entire CrSe2–K1.0CrSe2 composition range, providing insights into the experimentally observed phase transformations. The results of this work underscore CrSe2's potential as a high-performance cathode material for KIBs, offering valuable insights into the intercalation mechanisms of layered transition metal chalcogenides and paving the way for future advancements in optimizing KIB cathodes. [ABSTRACT FROM AUTHOR]

Published
2024
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41. Reducing disorder in Ge quantum wells by using thick SiGe barriers.

Author

Costa, Davide, Stehouwer, Lucas E. A., Huang, Yi, Martí-Sánchez, Sara, Degli Esposti, Davide, Arbiol, Jordi, and Scappucci, Giordano

Abstract

We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor–dielectric interface. Across several heterostructure field effect transistors, we measure an average maximum mobility of (4.4 ± 0.2) × 10 6 cm 2 / Vs at a saturation density of (1.72 ± 0.03) × 10 11 cm − 2 , corresponding to a long mean free path of (30 ± 1) μ m. The highest measured mobility is 4.68 × 10 6 cm 2 / Vs. We identify uniform background impurities and interface roughness as the dominant scattering mechanisms limiting mobility in a representative device, and we evaluate a percolation-induced critical density of (4.5 ± 0.1) × 10 9 cm − 2 . This low-disorder heterostructure, according to simulations, may support the electrostatic confinement of holes in gate-defined quantum dots. [ABSTRACT FROM AUTHOR]

Published
2024
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44. Aqueous Room‐Temperature Synthesis of Transition Metal Dichalcogenide Nanoparticles: A Sustainable Route to Efficient Hydrogen Evolution.

Author

Li, Jing, Miró, Roger, Wrzesińska‐Lashkova, Angelika, Yu, Jing, Arbiol, Jordi, Vaynzof, Yana, Shavel, Alexey, and Lesnyak, Vladimir

Subjects
HYDROGEN evolution reactions, METAL nanoparticles, CHEMICAL stability, INTERSTITIAL hydrogen generation, TRANSITION metals, PLATINUM nanoparticles
Abstract

Transition metal dichalcogenides (TMDs) have emerged as a focal point in electrocatalysis, particularly for the hydrogen evolution reaction (HER), owing to their notable catalytic activity, chemical stability, and cost‐efficiency. Despite these advantages, the challenge of devising a practical and economical method for their large‐scale application in HER remains an unresolved and critical issue. In this study, a facile, scalable, and cost‐effective approach is introduced for producing high‐yield, catalytically active TMD nanoparticles, including MoS2, MoSe2, RuS2, and RuSe2. These nanoparticles are synthesized through an aqueous room‐temperature process, which is not only environmentally friendly but also economically feasible for large‐scale production. Remarkably, these TMD nanoparticles exhibit versatile catalytic activity across a broad pH range for HER. Among them, RuSe2 nanoparticles demonstrate catalytic performance comparable to that of a commercial Pt/C electrode. Upon scaling up, the nanomaterials show great potential for integration into practical proton exchange membrane water electrolyzers, maintaining high efficiency even at large current densities and exhibiting very stable performance for up to 100 h. This research paves the way to a sustainable synthesis method of high‐performance catalysts, tailored for industrial hydrogen production applications. [ABSTRACT FROM AUTHOR]

Published
2024
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45. Highly Conductive Quasi‐1D Hexagonal Chalcogenide Perovskite Sr8Ti7S21 with Efficient Polysulfide Regulation in Lithium‐Sulfur Batteries.

Author

Yang, Dawei, Han, Yanbing, Li, Mengyao, Li, Canhuang, Bi, Wei, Gong, Qianhong, Zhang, Jie, Zhang, Jinglu, Zhou, Yingtang, Gao, Han, Arbiol, Jordi, Shi, Zhifeng, Zhou, Guangmin, and Cabot, Andreu

Subjects
ENERGY storage, DENSITY functional theory, LITHIUM sulfur batteries, OXIDATION-reduction reaction, PEROVSKITE, CHALCOGENIDES
Abstract

Lithium‐sulfur batteries (LSBs) are regarded as one of the most promising candidates for next‐generation energy storage systems. However, the commercialization of LSBs is still hindered by several technical issues, including the notorious polysulfide migration from the cathode to the anode and the sluggish sulfur conversion kinetics. Herein, a quasi‐1D hexagonal chalcogenide perovskite, Sr8Ti7S21, is demonstrated as an efficient sulfur host able to overcome these limitations. Experimental results and density functional theory calculations show Sr8Ti7S21 to offer strong lithium polysulfides (LiPS) binding through multiple bond formation. Besides, Sr8Ti7S21 effectively facilitates the kinetics of the LiPS redox reaction. As a result, S@Sr8Ti7S21‐based cathodes exhibit excellent initial capacities up to 1315 mAh g−1 at 0.2C, impressive cycling stability with an average capacity decay rate of 0.08% per cycle over 400 cycles at 1C, and a high areal capacity of 6.58 mAh cm−2 under a high sulfur loading of 6.5 mg cm−2. This work reveals the potential capabilities and promising prospects of chalcogenide perovskites in advancing LSBs technology. [ABSTRACT FROM AUTHOR]

Published
2024
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46. Amorphizing noble metal chalcogenide catalysts at the single-layer limit towards hydrogen production

Author

He, Yongmin, Liu, Liren, Zhu, Chao, Guo, Shasha, Golani, Prafful, Koo, Bonhyeong, Tang, Pengyi, Zhao, Zhiqiang, Xu, Manzhang, Zhu, Chao, Yu, Peng, Zhou, Xin, Gao, Caitian, Wang, Xuewen, Shi, Zude, Zheng, Lu, Yang, Jiefu, Shin, Byungha, Arbiol, Jordi, Duan, Huigao, Du, Yonghua, Heggen, Marc, Dunin-Borkowski, Rafal E., Guo, Wanlin, Wang, Qi Jie, Zhang, Zhuhua, and Liu, Zheng

Published
2022
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