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15 results on '"Beckx, Stephan"'

1. Feasibility of Wafer Exchange for European Edge AI Pilot Lines

Author

Wandesleben, Annika Franziska, primary, Truffier-Boutry, Delphine, additional, Brackmann, Varvara, additional, Lilienthal-Uhlig, Benjamin, additional, Jaysnkar, Manoj, additional, Beckx, Stephan, additional, Madarevic, Ivan, additional, Demarest, Audde, additional, Hintze, Bernd, additional, Hochschulz, Franck, additional, Tiec, Yannick Le, additional, Spessot, Alessio, additional, and Nemouchi, Fabrice, additional

Published
2023
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2. Integrating high-k dielectrics: etched polysilicon or metal gates? (Etch)

Author

Schram, Tom, Beckx, Stephan, De Gendt, Stefan, Vertommen, Johan, and Lee, Steve

Subjects
United States
Abstract

OVERVIEW There is an immediate need for reduced gate leakage/higher capacitance gate stacks for stand-by low power applications. For high-performance applications, where leakage is less of a restraining factor, the […]

Published
2003

8. Silicon-on-insulator nanophotonics

Author

Bogaerts, Wim, primary, Dumon, Pieter, additional, Jaenen, Patrick, additional, Wouters, Johan, additional, Beckx, Stephan, additional, Wiaux, Vincent, additional, Van Thourhout, Dries, additional, Taillaert, Dirk, additional, Luyssaert, Bert, additional, and Baets, Roel, additional

Published
2005
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11. Large-scale production techniques for photonic nanostructures

Author

Bogaerts, Wim, primary, Wiaux, Vincent, additional, Dumon, Pieter, additional, Taillaert, Dirk, additional, Wouters, Johan, additional, Beckx, Stephan, additional, Van Campenhout, Joris, additional, Luyssaert, Bert, additional, Van Thourhout, Dries, additional, and Baets, Roel, additional

Published
2003
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12. Status 157-nm lithography development at IMEC

Author

Ronse, Kurt G., primary, De Bisschop, Peter, additional, Eliat, Astrid, additional, Goethals, Anne-Marie, additional, Hermans, Jan, additional, Jonckheere, Rik, additional, Van Den Heuvel, Dieter, additional, Van Roey, Frieda, additional, Beckx, Stephan, additional, Wouters, Johan M., additional, de Marneffe, Jean-Francois, additional, O'Neil, Timothy, additional, Tirri, Bruce, additional, and Sewell, Harry, additional

Published
2003
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14. Low Loss Nanophotonic Waveguides and Ring Resonators in Silicon-on-Insulator.

Author

Baets, Roel, Bogaerts, Wim, Taillaert, Dirk, Dumon, Pieter, Bienstman, Peter, Van Thourhout, Dries, Van Campenhout, Joris, Wiaux, Vincent, Wouters, Johan, and Beckx, Stephan

Subjects
WAVEGUIDES, NANOPHOTONIC integrated circuits, PHOTONS, RESONATORS, PHYSICS, PHYSICAL sciences
Abstract

High index contrast, wavelength-scale structures are the key to ultra-compact integration of photonic integrated circuits. We discuss the general properties of these nanophotonic components and the rationale for using them. We studied the fabrication of these structures in the Silicon-on-insulator material system using CMOS processing methods and find this technology to be suitable for commercial implementation of nanophotonic IC’s. We review photonic wires as one of the paths towards achieving denser integration and discuss the measurement results of waveguides and ring resonators. To tackle the coupling to fiber and the polarization dependency problem, we studied and fabricated vertical fiber couplers. © 2004 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2004
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15. Profile control of novel non-Si gates using BCl3/N2 plasma.

Author

Shamiryan, Denis, Paraschiv, Vasile, Eslava-Fernandez, Salvador, Demand, Marc, Baklanov, Mikhail, Beckx, Stephan, and Boullart, Werner

Subjects
BORON nitride, LOW temperature plasmas, ETCHING, CHEMICAL vapor deposition, GATES
Abstract

The authors found that a BCl3/N2 plasma is very suitable for metal gate patterning and profile control as it produces a passivating film during the etching. On blanket wafers, a boron-nitride-like film is deposited from a boron trichloride/nitride plasma mixture in a standard etch chamber at temperatures as low as 60 °C. Deposition rate can be varied from 10 to more than 100 nm/min depending on the plasma conditions and BCl3/N2 ratio. The film contains hexagonal boron nitride but is very unlikely to be a stoichiometric BN. It decomposes at elevated temperatures and is water soluble. The latter property makes the postetch clean relatively straightforward. This film can be used for sidewall passivation during the patterning of advanced non-Si gates, e.g., metal gates. They are presenting the use of BCl3/N2 plasma for patterning of Ge and TaN gates as examples. The Ge gate profile is damaged by a pure BCl3 plasma during high-k dielectric (HfO2) etching after the gate patterning. Addition of 10% N2 to the BCl3 plasma preserves the gate profile while removing the high k. In the other example, a TaN gate is etched isotopically by pure BCl3 plasma. Addition of 5% N2 prevents the lateral attack providing straight TaN profile. [ABSTRACT FROM AUTHOR]

Published
2007
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