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1. HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale

2. Strain measurement in semiconductor FinFET devices using a novel moir\'e demodulation technique

14. Unravelling stacking order in epitaxial bilayer MX₂ using 4D-STEM with unsupervised learning

15. Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice

16. Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001).

17. CMOS Compatible Josephson Junctions for Superconducting Qubit Applications

20. Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

26. Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis

28. Rare-Earth Metal Scandate High-k Layers

29. Study of Ni-Silicide Contacts to Si:C Source/Drain.

31. Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit

32. SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET

33. High-k Dielectrics and Metal Gates for Future Generation Memory Devices

34. (Invited) Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS

35. TSV Cu Plating and Implications for CMP

38. Combined STEM-EDS tomography of nanowire structures

42. Evaluation of the electrical contact area in contact-mode scanning probe microscopy.

43. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors.

50. Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism

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