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2. Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements.

Author

Patouillard, J., Gassilloud, R., Mercier, F., Mantoux, A., Boichot, R., Crisci, A., Bernard, M., Gauthier, N., Cadot, S., Raynaud, C., Gianesello, F., and Blanquet, E.

Subjects
MOLYBDENUM nitrides, ATOMIC layer deposition, THIN films, REFLECTANCE measurement, METAL nitrides, MOLYBDENUM disulfide, NITRIDES, SILICON nitride films
Abstract

Two-dimensional (2D) metal nitrides are new emerging materials with potential applications in electronics, energy storage, or conversion efficiency. In this paper, we report the synthesis of molybdenum nitride by nitriding molybdenum disulfide (MoS2) via a 700 °C ammonia (NH3) reactive heat treatment. A well-controlled uniform MoS2 thin film was prepared by atomic layer deposition (ALD). The progressive MoS2 nitriding reaction has been demonstrated and monitored by in situ reflectance measurements. These results have been confirmed by Raman and x-ray photoelectron spectrometry. This method paves the way to a new potential route to the synthesis of Mo nitride obtained from a well-controlled uniform 2D-MoS2 thin film deposited by ALD. [ABSTRACT FROM AUTHOR]

Published
2023
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