412 results on '"Delabie, Annelies"'
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2. Low-Temperature Dechlorosilylation Chemistry for Area-Selective Deposition of Ge2Sb2Te5 and Its Mechanism in Nanopatterns
3. Probing the spatial dimensions of nanoscale patterns with Rutherford backscattering spectrometry
4. Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides
5. Impact of open‐air processing on atmospheric pressure plasma deposition of poly(ethylene oxide) coatings for antifouling applications
6. Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry
7. Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface
8. Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask
9. Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility
10. Selectivity and Growth Rate Modulations for Ruthenium Area‐selective Deposition by Co‐Reagent and Nanopattern Design.
11. Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface.
12. Optimizing extreme ultraviolet lithography imaging metrics as a function of absorber thickness and illumination source: a simulation case study of Ta-Co alloy
13. Quantified Uniformity and Selectivity of TiO2 Films in 45‐nm Half Pitch Patterns Using Area‐Selective Deposition Supercycles
14. A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO2 Atomic Layer Deposition
15. In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor
16. Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions
17. Enhancing Performance and Function of Polymethacrylate Extreme Ultraviolet Resists Using Area-Selective Deposition
18. Ruthenocene and cyclopentadienyl pyrrolyl ruthenium as precursors for ruthenium atomic layer deposition: a comparative study of dissociation enthalpies
19. Front End of the Line Process
20. Quantified Uniformity and Selectivity of TiO2 Films in 45‐nm Half Pitch Patterns Using Area‐Selective Deposition Supercycles.
21. A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO2 Atomic Layer Deposition.
22. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry
23. Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer
24. Compatibility between polymethacrylate-based extreme ultraviolet resists and TiO2 area-selective deposition
25. Optimizing EUV imaging metrics as a function of absorber thickness and illumination source: simulation case study of Ta-Co alloy
26. (Invited) Nm-Scale Patterns and Selectivity: A Blessing or a Curse
27. (Invited) Metallizations for Advanced Interconnects and Challenges for Future Nodes
28. (Invited) Addressing Key Process and Material Challenges to Enable 2D Transition Metal Dichalcogenide Channels in Advanced Logic Devices
29. Two-dimensional WS2 crystals at predetermined locations by anisotropic growth during atomic layer deposition.
30. Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition
31. Chemical vapor deposition processes for the fabrication of epitaxial Si-O superlattices
32. In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor.
33. Evaluation of Ta-Co alloys as novel high-k EUV mask absorber
34. Improving polymethacrylate EUV resists with TiO2 area-selective deposition
35. Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer.
36. Selectivity Enhancement for Ruthenium Atomic Layer Deposition in Sub‐50 nm Nanopatterns by Diffusion and Size‐Dependent Reactivity
37. Interfaces of high- k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)
38. Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition.
39. Front End of the Line Process
40. Ruthenocene and cyclopentadienyl pyrrolyl ruthenium as precursors for ruthenium atomic layer deposition: a comparative study of dissociation enthalpies
41. High Mobility Channel Materials and Novel Devices for Scaling of Nanoeelectronics beyond the Si Roadmap
42. Optimizing EUV imaging metrics as a function of absorber thickness and illumination source: simulation case study of Ta-Co alloy
43. A chemisorbed interfacial layer for seeding atomic layer deposition on graphite
44. Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector
45. Building patterns from the bottom: a complementary approach to lithography
46. Study of the reliability impact of chlorine precursor residues in thin atomic-layer-deposited Hf[O.sub.2] layers
47. Grazing Incidence-X-ray Fluorescence Spectrometry for the Compositional Analysis of Nanometer-Thin High-κDielectric HfO2 Layers
48. Estimation of fixed charge densities in hafnium-silicate gate dielectrics
49. Electrical characteristics of 8 Angstrom EOT Hf[O.sub.2]/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
50. Area-Selective Deposition of Ruthenium by Area-Dependent Surface Diffusion
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