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The photoelectrochemical performance of Ta3N5 photoanodes is strongly impacted by the presence of shallow and deep defects within the bandgap. However, the role of such states in defining stability under operational conditions is not well understood. Here, a highly controllable synthesis approach is used to create homogenous Ta3N5 thin films with tailored defect concentrations to establish the relationship between atomic‐scale point defects and macroscale stability. Reduced oxygen contents increase long‐range structural order but lead to high concentrations of deep‐level states, while higher oxygen contents result in reduced structural order but beneficially passivate deep‐level defects. Despite the different defect properties, the synthesized photoelectrodes degrade similarly under water oxidation conditions due to the formation of a surface oxide layer that blocks interfacial hole injection and accelerates charge recombination. In contrast, under ferrocyanide oxidation conditions, it is found that Ta3N5 films with high oxygen concentrations exhibit long‐term stability, whereas those possessing lower oxygen contents and higher deep‐level defect concentrations rapidly degrade. These results indicate that deep‐level defects result in rapid trapping of photocarriers and surface oxidation but that shallow oxygen donors can be introduced into Ta3N5 to enable kinetic stabilization of the interface. [ABSTRACT FROM AUTHOR]

Ubiquitous moisture in synthetic conditions and ambient environments can strongly influence the conductivity of ZnO semiconductors via the chemisorption and physisorption of water molecules on the ZnO surface. Such an intrinsically water‐sensitive nature will become more evident in mesoporous ZnO films where a large surface area and active sites are created simultaneously. However, fundamental insights underlying water‐mediated ZnO surface chemistry and electrical conductivity and the factors affecting them remain ambiguous due to the complexity of ZnO surfaces and the difficulties of in situ characterizations at multi‐dimensions. Here, self‐assembling diblock copolymers are exploited as structure‐directing agents to achieve mesoporous ZnO thin films with highly tailorable structural characteristics ranging from nanomorphologies, over crystalline levels, to defect contents. As verified by theoretical calculations, the presence of oxygen vacancy will facilitate favorable water adsorption and subsequent dissociation on the polar ZnO surfaces. Upon humidity exposure with progressively increased levels, mesoporous ZnO films are revealed to follow an almost positive relationship between adsorption and electrical conductivity but show superior morphological stability. This work not only elucidates the water‐governed ZnO surface chemistry but may also promote a comprehensive understanding of the morphology‐function relationship on ZnO‐based electronics. [ABSTRACT FROM AUTHOR]

While Ta3N5 shows excellent potential as a semiconductor photoanode for solar water splitting, its performance is hindered by poor charge carrier transport and trapping due to native defects that introduce electronic states deep within its bandgap. Here, it is demonstrated that controlled Ti doping of Ta3N5 can dramatically reduce the concentration of deep‐level defects and enhance its photoelectrochemical performance, yielding a sevenfold increase in photocurrent density and a 300 mV cathodic shift in photocurrent onset potential compared to undoped material. Comprehensive characterization reveals that Ti4+ ions substitute Ta5+ lattice sites, thereby introducing compensating acceptor states, reducing the concentrations of deleterious nitrogen vacancies and reducing Ta3+ states, and thereby suppressing trapping and recombination. Owing to the similar ionic radii of Ti4+ and Ta5+, substitutional doping does not introduce lattice strain or significantly affect the underlying electronic structure of the host semiconductor. Furthermore, Ti can be incorporated without increasing the oxygen donor content, thereby enabling the electrical conductivity to be tuned by over seven orders of magnitude. Thus, Ti doping of Ta3N5 provides a powerful basis for precisely engineering its optoelectronic characteristics and to substantially improve its functional characteristics as an advanced photoelectrode for solar fuels applications. [ABSTRACT FROM AUTHOR]

Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on scalable processes for interface manipulation of structured surfaces on the atomic level. While ALD allows the synthesis of conformal films with utmost control over the thickness, atomically‐defined closed coatings and surface modifications are challenging to achieve because of 3D growth during nucleation. Here, a route is presented toward the sub‐nanometer thin and continuous aluminum oxide (AlOx) coatings on silicon substrates for the spatial control of the surface charge density and interface energetics. Trimethylaluminum in combination with remote hydrogen plasma is used instead of a gas‐phase oxidant for the transformation of silicon dioxide (SiO2) into alumina. Depending on the number of ALD cycles, the SiO2 can be partially or fully transformed, which is exploited to deposit ultrathin AlOx layers in selected regions defined by lithographic patterning. The resulting patterned surfaces are characterized by lateral AlOx/SiO2 interfaces possessing 0.3 nm step heights and surface potential steps exceeding 0.4 V. In addition, the introduction of fixed negative charges of 9 × 1012 cm−2 enables modulation of the surface band bending, which is relevant to the field‐effect passivation of silicon and low‐impedance charge transfer across contact interfaces. [ABSTRACT FROM AUTHOR]

Disordered and porous metal oxides are promising earth‐abundant and cost‐effective alternatives to noble‐metal electrocatalysts. Herein, nonsaturated oxidation in plasma‐enhanced atomic layer deposition is leveraged to tune the structural, mechanical, and optical properties of biphasic cobalt hydroxide films, thereby tailoring their catalytic activities and chemical stabilities. Short oxygen plasma exposure times and low plasma powers incompletely oxidize the cobaltocene precursor to Co(OH)2 and result in carbon impurity incorporation. These Co(OH)2 films are highly porous and catalytically active, but their electrochemical stability is impacted by poor substrate adhesion. In contrast, long exposure times and high powers completely oxidize the precursor to Co3O4, reduce the carbon incorporation, and improve the crystallinity. While the Co3O4 films have high electrochemical stability, they are characterized by low oxygen evolution reaction activity. To overcome these competing properties, the established relation between deposition parameters and functional film properties is applied to design bilayer films exhibiting simultaneously improved electrochemical performance and chemical stability. The bilayer films combine a highly active Co(OH)2 surface with a stable Co3O4 interface layer. These coatings exhibit minimal light absorption, thus making them suitable as protective catalytic layers on semiconductor light absorbers for application in photoelectrochemical devices. [ABSTRACT FROM AUTHOR]

We demonstrate a facile approach to solution-based synthesis of wafer-scale epitaxial bismuth vanadate (BiVO4) thin films by spin-coating on yttria-stabilized zirconia. Epitaxial growth proceeds via solid-state transformation of initially formed polycrystalline films, driven by interface energy minimization. The (010)-oriented BiVO4 films are smooth and compact, possessing remarkably high structural quality across complete 2′′ wafers. Optical absorption is characterized by a sharp onset with a low sub-band gap response, confirming that the structural order of the films results in correspondingly high optoelectronic quality. This combination of structural and optoelectronic quality enables measurements that reveal a strong optical anisotropy of BiVO4, which leads to significantly increased in-plane optical constants near the fundamental band edge that are of particular importance for maximizing light harvesting in semiconductor photoanodes. Temperature-dependent transport measurements confirm a thermally activated hopping barrier of ∼570 meV, consistent with small electron polaron conduction. This simple approach for synthesis of high-quality epitaxial BiVO4, without the need for complex deposition equipment, enables a broadly accessible materials base to accelerate research aimed at understanding and optimizing photoelectrochemical energy conversion mechanisms. [ABSTRACT FROM AUTHOR]

The (opto)electronic properties of Ta3N5 photoelectrodes are often dominated by defects, such as oxygen impurities, nitrogen vacancies, and low-valent Ta cations, impeding fundamental studies of its electronic structure, chemical stability, and photocarrier transport. Here, we explore the role of ammonia annealing following direct reactive magnetron sputtering of tantalum nitride thin films, achieving near-ideal stoichiometry, with significantly reduced native defect and oxygen impurity concentrations. By analyzing structural, optical, and photoelectrochemical properties as a function of ammonia annealing temperature, we provide new insights into the basic semiconductor properties of Ta3N5, as well as the role of defects on its optoelectronic characteristics. Both the crystallinity and material quality improve up to 940 °C, due to elimination of oxygen impurities. Even higher annealing temperatures cause material decomposition and introduce additional disorder within the Ta3N5 lattice, leading to reduced photoelectrochemical performance. Overall, the high material quality enables us to unambiguously identify the nature of the Ta3N5 bandgap as indirect, thereby resolving a long-standing controversy regarding the most fundamental characteristic of this material as a semiconductor. The compact morphology, low defect content, and high optoelectronic quality of these films provide a basis for further optimization of photoanodes and may open up further application opportunities beyond photoelectrochemical energy conversion. [ABSTRACT FROM AUTHOR]

We elucidate the role of subsurface oxygen on the production of C2 products from CO2 reduction over Cu electrocatalysts using the newly developed grand canonical potential kinetics density functional theory method, which predicts that the rate of C2 production on pure Cu with no O is ∼500 times slower than H2 evolution. In contrast, starting with Cu2O, the rate of C2 production is >5,000 times faster than pure Cu(111) and comparable to H2 production. To validate these predictions experimentally, we combined time-dependent product detection with multiple characterization techniques to show that ethylene production decreases substantially with time and that a sufficiently prolonged reaction time (up to 20 h) leads only to H2 evolution with ethylene production ∼1,000 times slower, in agreement with theory. This result shows that maintaining substantial subsurface oxygen is essential for long-term C2 production with Cu catalysts. [ABSTRACT FROM AUTHOR]

The performance of energy materials hinges on the presence of structural defects and heterogeneity over different length scales. Here we map the correlation between morphological and functional heterogeneity in bismuth vanadate, a promising metal oxide photoanode for photoelectrochemical water splitting, by photoconductive atomic force microscopy. We demonstrate that contrast in mapping electrical conductance depends on charge transport limitations, and on the contact at the sample/probe interface. Using temperature and illumination intensity-dependent current--voltage spectroscopy, we find that the transport mechanism in bismuth vanadate can be attributed to space charge-limited current in the presence of trap states. We observe no additional recombination sites at grain boundaries, which indicates high defect tolerance in bismuth vanadate. These findings support the fabrication of highly efficient bismuth vanadate nanostructures and provide insights into how local functionality affects the macroscopic performance. [ABSTRACT FROM AUTHOR]

The on-surface synthesis of covalent organic nanosheets driven by reactive metal surfaces leads to strongly adsorbed organic nanostructures, which conceals their intrinsic properties. Hence, reducing the electronic coupling between the organic networks and commonly used metal surfaces is an important step towards characterization of the true material. We demonstrate that post-synthetic exposure to iodine vapor leads to the intercalation of an iodine monolayer between covalent polyphenylene networks and Ag(111) surfaces. The experimentally observed changes from surface-bound to detached nanosheets are reproduced by DFT simulations. These findings suggest that the intercalation of iodine provides a material that shows geometric and electronic properties substantially closer to those of the freestanding network. [ABSTRACT FROM AUTHOR]

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The role of organometallic intermediates during on-surface polymerization via Ullmann coupling was studied on Ag(111). The polymerization progress was monitored by X-ray photoelectron spectroscopy (XPS). Scanning Tunneling Microscopy (STM) was used to characterize organometallic and covalent networks and to identify the temperature regimes for organometallic and covalent bond formation. [ABSTRACT FROM AUTHOR]

The polymerization of 1,4-diethynylbenzene was studied on a Cu(111) surface using scanning tunneling microscopy (STM) under ultra-high vacuum conditions. Thermal activation yielded disordered covalent networks, where distinct basic structural motifs indicate different coupling reactions. [ABSTRACT FROM AUTHOR]

We report on covalent two-dimensional phenylene–boroxine hybrid-networks that were synthesized under ultra-high vacuum conditions from doubly functionalized monomers through thermally activated condensation prior to deposition and successive heterogeneously catalyzed radical addition on Ag(111). Structural properties were characterized in situby high resolution Scanning-Tunneling-Microscopy (STM). [ABSTRACT FROM AUTHOR]

Ternary nitrides are rapidly emerging as promising compounds for optoelectronic and energy conversion applications, yet comparatively little of this vast composition space has been explored. Furthermore, the crystal structures of these compounds can exhibit a significant amount of disorder, the consequences of which are not yet well understood. Here, the deposition of bixbyite‐type ZrTaN3 thin films is demonstrated by reactive magnetron co‐sputtering and observed semiconducting character, with a strong optical absorption onset at 1.8 eV and significant photoactivity, with prospective application as functional photoanodes. It is found that Wyckoff‐site occupancy of cations is a critical factor in determining these beneficial optoelectronic properties. First‐principles calculations show that cation disorder leads to minor deviations in the total energy but modulates the bandgap by 0.5 eV, changing orbital hybridization of valence and conduction band states. In addition to demonstrating that ZrTaN3 is a promising visible light‐absorbing semiconductor and active photoanode material, the findings provide important insights regarding the role of cation ordering on the electronic structure of ternary semiconductors. In particular, it is shown that not only cation order, but also the cationic Wyckoff site occupancy has a substantial impact on key optoelectronic properties, which can guide future design and synthesis of advanced semiconductors. [ABSTRACT FROM AUTHOR]

The article offers brief information on research related to post-synthetic decoupling of on-surface-synthesized covalent nanostructures from silver.

Oberflächensynthese M. Lackinger et al. zeigen in ihrer Zuschrift auf S. 7780 ff., dass Iod‐Interkalation die postsynthetische Entkopplung Oberflächen‐synthetisierter kovalenter organischer Nanostrukturen von Ag(111) erlaubt. [ABSTRACT FROM AUTHOR]