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It is shown that the electrical transport in quantum dot (QD) constituted films, synthesized through electrochemical doping, could be described through a two-step model considering (i) the tunneling transport of electrons from an electron source, and subsequent (ii) Ohmic transport through the film governed by a temperature (T) dependent mobility (μ), varying as T−α. A transfer matrix algorithm based approach for electrical field induced tunneling and α ∼ 1, was used. The indicated modeling principles could be deployed to predict the current–voltage characteristics of QD films and assemblies coupled to metallic electrodes. [ABSTRACT FROM AUTHOR]

It is shown through comparison with experimental results that the efficiency of quantum dot (QD) film-based photoemission would be impacted by an inadequate supply of electrons from an electron source. An explanation for the related photocurrent droop, as arising from restricted electron transmission at the substrate-QD interface as well as between the QDs, is proposed. It is suggested that interfacial potential based biasing schemes could considerably enhance electronic coupling for improved transmission and quantum efficiency. Modeling indicates that electric fields of ∼450 MV/m would be necessary for ensuring electron transmission coefficients close to unity. [ABSTRACT FROM AUTHOR]