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Introduction. The presumption of knowledge of the law and laws of the state assumes that every citizen knows the necessary amount of legal information sufficient to fulfill the basic obligation to comply with the Constitution and laws of the Russian Federation. Accordingly, the study of the Constitution of the Russian Federation and basic laws is mandatory and should be integrated into educational programs at all levels. Special attention should be paid to the constitutional and legal education of children, because at this age the model of behavior, which a person will follow in the future, is laid. Theoretical analysis. The study of the Constitution of Russia in childhood and adolescence is based on the concept of meta-law, which asserts the unity of law, religion, philosophy, science, and art. In the educational paradigm of meta-law, the Constitution is perceived through spiritual and moral values, ethical, moral attitudes, confirming by legal authority the correctness of the ideas about what is due that the child has learned. The initial stage of studying the Basic Law of the country may coincide with the child’s study of the alphabet, when individual letters of the alphabet will be fixed in the child’s memory by the example of categories of constitutional law that are accessible to understanding. It is fruitful to address the content of the Constitution of Russia through the prism of elementary plots of folk tales reflecting the archetypes of popular consciousness. Through the fairy tale, the child is introduced to the national worldview, learns to recognize himself or herself as part of the multinational people of the Russian Federation, who embodied their political will in the Basic Law of the country. Folk art expresses an ideal presented in an artistic form. The Constitution legally formalizes the people’s idea. That is why legal folklore studies should be integrated into educational programs in literature, social studies, and jurisprudence. Works of children’s fiction devoted to the Basic Law of the country are the most correct form for the perception of the text of the Constitution by children aged six to eight. Serious discussions about the Constitution of Russia, the history of the constitutional idea in our country, political power and constitutional practice of the state should take place at high school age. The choice of a form of submission of constitutional and legal information is determined by mental generational characteristics of children in accordance with the information environment in which their formation and development took place. Results. The authors conclude that the theory of the Constitution should be integrated into the program of basic general education and offer the fundamentals of a specialized pedagogical strategy for studying the Constitution by children. The methodology of studying the Constitution by children determines the identity of the legal system of Russia, where moral norms, ethics, morality, culture are the co-regulators of law. The format of educational practices depends on the stages of growing up, socialization and individualization of the child.

Mg2Si film 350–600 nm thick was formed on Si(111) substrate by ultrafast reactive deposition of Mg. Then 10–15 nm thick films of FeSi or CrSi2 were grown as cover layers on Mg2Si by codeposition of Fe/Si or Cr/Si. In comparison with bare Mg2Si/Si film, the measured transparency losses in 0.1–1.1 eV range are ∼17–25 and 10–35% for the samples with the FeSi and CrSi2 layers, respectively. The measured at room temperature resistivity is ∼0.24 mΩ cm for FeSi and 1.7 mΩ cm for CrSi2. The photoresponse of structures FeSi/Mg2Si/Si and CrSi2/Mg2Si/Si illuminated with the light filtered by a silicon plate demonstrate the spectral sensitivity in the range 980–1200 nm and peak intensity ∼255 and ∼620 μA/W respectively. [ABSTRACT FROM AUTHOR]

Ab initio techniques have been used to investigate structural changes in semiconducting Mg2Si and Ca2Si thin films (from 17 nm down to 0.2 nm corresponding to the 2D structure) along with band-gap variations due to quantum confinement. Cubic Mg2Si(111) thin films being dynamically stable at thicknesses (d) larger than 0.3 nm displayed an indirect band gap, the reduction of which with increasing d could be reasonably well described by the simple effective mass approximation. Only 2D Mg2Si has a unique structure because of the orthorhombic distortion and the direct band gap. Since the surface energy of cubic Ca2Si(111) films was lower with respect to any surface of the orthorhombic phase, which is the ground state for the Ca2Si bulk, the metastable in-bulk cubic phase in the form of thin films turned out to be preferable in total energy than any orthorhombic Ca2Si thin film for d < 3 nm. Sizable structural distortion and the appearance of surface states in the gap region of Ca2Si thin films with d < 3 nm could be the reason for an odd dependence of the band-gap variation on d. [ABSTRACT FROM AUTHOR]

A nanocrystalline Ca2Si film on Al2O3(0001) is formed for the first time by converting a sacrificial 2D Mg2Si template into a Ca2Si seed layer with the preliminary formation of an amorphous 2D silicon layer. A Ca2Si seed layer on a sapphire substrate facilitates the growth of oriented Ca2Si films by molecular-beam epitaxy (MBE) at a temperature of 250°C, for which one epitaxial ratio is observed, Ca2Si(211)/Al2O3(0001). Studies of the optical properties and parameters of the band structure of Ca2Si on sapphire reveal the nature of the fundamental direct transition with an energy of 0.88 ± 0.01 eV. Direct interband transitions are observed in the band structure of Ca2Si: at 0.88, 1.16, 1.49, and 1.61 eV with increasing oscillator strength. At photon energies from 0.78 to 0.88 eV, the Urbach tail on defects in Ca2Si nanocrystals makes the main contribution to absorption. Absorption at grain boundaries is observed at photon energies from 0.6 to 0.78 eV, and at free carriers, at energies below 0.6 eV. The results obtained are important for optoelectronics in the infrared (IR) region of the spectrum. [ABSTRACT FROM AUTHOR]

We simulate the conjugation of crystal lattices of two-dimensional Mg2Si layers with atomically clean Si(001)2×1 and Si(110)"16×2" surfaces. Thick films are grown by molecular-beam epitaxy (MBE) through the formation of Ca2Si seed layers. For a Si(001) substrate, three different silicides are formed in a 140-nm thick film at a temperature of T = 300°C at a Ca-to-Si deposition rate ratio of 4.7: Ca2Si, CaSi, and hR3-CaSi2 with comparable contributions. With a decrease in the MBE-growth temperature to 250°C and a Ca-to-Si deposition-rate ratio of 8.4, a polycrystalline Ca2Si film is formed on Si(110) with the minimal contribution from CaSi. Polycrystalline and epitaxial Ca2Si films with thicknesses from 22 to 114 nm are grown on Si(111) substrates by the sacrificial-template method and MBE growth at a temperature of 250°C and different ratios of Ca and Si deposition rates (4.0–20.0). The minimum deposition-rate ratio ensures single-phase growth with the Ca2Si(100)/Si(111) epitaxial ratio; as it increases from 7.3, polycrystalline films grow with three orientations on Si(111): Ca2Si(100), Ca2Si(110), and Ca2Si(111). In Ca2Si films, regardless of their structure, the fundamental transition is masked by the Urbach edge in the photon-energy range of 0.78–1.0 eV, and then the second direct interband transition is identified (E2d = 1.095 ± 0.1 eV). [ABSTRACT FROM AUTHOR]

The magnetic properties of nanoobjects of nonmagnetic substances based on silicon and transition metal (iron) are considered. It is found that a system of -FeSi nanorods with a mean height of 6.6 nm and lengths from 50 to 200 nm is formed by deposition of iron with 5.22 monolayers in ultrahigh vacuum on a vicinal silicon surface Si(111)-4 followed by annealing at a temperature of C. Soft ferromagnetic loops with a coercive force from 90 to 180 Oe, which persist up to a temperature of 300 K, are observed in nanorods. It is found that easy magnetization axis is perpendicular to the nanorods, while the hard magnetization axis is parallel to them. This type of nanoobjects is promising for developing spintronic devices within the planar silicon technology. [ABSTRACT FROM AUTHOR]

Photonic crystals based on amorphous SiO2 nanospheres have been obtained in four-component H2O–Si(OC2H5)4–NH3–EtOH systems at a constant initial volume (100 mL), a constant molar ratio of NH3:Si(OC2H5)4 = 10 : 1, and varied molar ratio of H2O–Si(OC2H5)4 (x1) and H2O–EtOH (x2) within the range of 30–110 and 0.4–2.8, respectively. The increase in water concentration and simultaneous decrease in the alcohol concentration in the initial mixture have resulted in the reduction of mean diameter of the SiO2 spheres from 440 to 270 nm. The curves of the correlation curves between effective diameter of the nanospheres– and the H2O–Si(OC2H5)4 and H2O–EtOH molar ratio have shown two regions with different slopes: for the samples obtained at low H2O–Si(OC2H5)4 and H2O–EtOH molar ratios for these obtained at [H2O] : [Si(OC2H5)4] > 50, [H2O] : [EtOH] > 1. Correlations between the size of the nanospheres of oligomerized SiO2, the initial rate of the process, and the dielectric constant of the initial mixture have been found. The spectral parameters of the photonic crystals obtained on the basis of the amorphous SiO2 spheres have been affected by the H2O–Si(OC2H5)4 and H2O–EtOH molar ratios in the initial mixtures. [ABSTRACT FROM AUTHOR]

This article describes the development of an Si-based light-emitting diode with β-FeSi2 nanocrystals embedded in the active layer. Favorable epitaxial conditions allow us to obtain a direct band gap type-I band alignment Si/β-FeSi2 nanocrystals/Si heterostructure with optical transition at a wavelength range of 1500-1550 nm at room temperature. Transmission electron microscopy data reveal strained, defect-free β-FeSi2 nanocrystals of diameter 6 and 25 nm embedded in the Si matrix. Intense electroluminescence was observed at a pumping current density as low as 0.7A/cm². The device reached an optical emission power of up to 25 µW at 9A/cm² with an external quantum efficiency of 0.009%. Watt-Ampere characteristic linearity suggests that the optical power margin of the light-emitting diode has not been exhausted. Band structure calculations explain the luminescence as being mainly due to radiative recombination in the large β-FeSi2 nanocrystals resulting from the realization of an indirect-to-direct band gap electronic configuration transformation arising from a favorable deformation of nanocrystals. The direct band gap structure and the measured short decay time of the luminescence of several tens of ns give rise to a fast operation speed for the device. Thus a method for developing a silicon-based photonic integrated circuit, combining complementary metal-oxide-semiconductor technology functionality and near-infrared light emission, is reported here. [ABSTRACT FROM AUTHOR]

The electrical properties of thin iron films deposited at room temperature (RT) on clean Si(100) and on the prefabricated Si(100)-c(4×12)-Al surface phase (SP) have been studied by means of in situ Hall effect and conductance measurements for iron coverage (0–2.3) nm. It is shown that the Si(100)-c(4×12)-Al SP blocks intermixing of iron and substrate atoms. The conductance and mobility of the majority carriers in this SP are higher than those in Si(100)2×1, within the temperature range from RT to 460 K. For iron coverage below 2 nm, the sample conductance is significantly lower than that for the bare Si(100). The iron film grown on the Si(100)-c(4×12)-Al becomes continuous at a coverage approximately half as thick as for the film grown on the Si(100)2×1 surface. [ABSTRACT FROM AUTHOR]