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Your search keyword '"Gao, Xingsen"' showing total 297 results
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297 results on '"Gao, Xingsen"'

1. Room-temperature sub-100 nm N\'eel-type skyrmions in non-stoichiometric van der Waals ferromagnet $\rm Fe_{3-x}GaTe_{2}$ with ultrafast laser writability

Author

Li, Zefang, Zhang, Huai, Li, Guanqi, Guo, Jiangteng, Wang, Qingping, Deng, Ying, Hu, Yue, Hu, Xuange, Liu, Can, Qin, Minghui, Shen, Xi, Yu, Richeng, Gao, Xingsen, Liao, Zhimin, Liu, Junming, Hou, Zhipeng, Zhu, Yimei, and Fu, Xuewen

Subjects
Condensed Matter - Materials Science
Abstract

Realizing room-temperature magnetic skyrmions in two-dimensional van der Waals ferromagnets offers unparalleled prospects for future spintronic applications. However, due to the intrinsic spin fluctuations that suppress atomic long-range magnetic order and the inherent inversion crystal symmetry that excludes the presence of the Dzyaloshinskii-Moriya interaction, achieving room-temperature skyrmions in 2D magnets remains a formidable challenge. In this study, we target room-temperature 2D magnet $\rm Fe_3GaTe_2$ and unveil that the introduction of iron-deficient into this compound enables spatial inversion symmetry breaking, thus inducing a significant Dzyaloshinskii-Moriya interaction that brings about room-temperature N\'eel-type skyrmions with unprecedentedly small size. To further enhance the practical applications of this finding, we employ a homemade in-situ optical Lorentz transmission electron microscopy to demonstrate ultrafast writing of skyrmions in $\rm Fe_{3-x}GaTe_2$ using a single femtosecond laser pulse. Our results manifest the $\rm Fe_{3-x}GaTe_2$ as a promising building block for realizing skyrmion-based magneto-optical functionalities.

Published
2024
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2. Tripling energy storage density through order-disorder transition induced polar nanoregions in PbZrO3 thin films by ion implantation

Author

Luo, Yongjian, Wang, Changan, Chen, Chao, Gao, Yuan, Sun, Fei, Li, Caiwen, Yin, Xiaozhe, Luo, Chunlai, Kentsch, Ulrich, Cai, Xiangbin, Bai, Mei, Fan, Zhen, Qin, Minghui, Zeng, Min, Dai, Jiyan, Zhou, Guofu, Lu, Xubing, Lou, Xiaojie, Zhou, Shengqiang, Gao, Xingsen, Chen, Deyang, and Liu, Jun-Ming

Subjects
Condensed Matter - Materials Science
Abstract

Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, both maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order-disorder transition induced polar nanoregions (PNRs) have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 J/cm3 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities.

Published
2022
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5. Deterministic manipulation of multi-state polarization switching in multiferroic thin films

Author

Chen, Chao, Chen, Deyang, Li, Peilian, Qin, Minghui, Lu, Xubing, Zhou, Guofu, Gao, Xingsen, and Liu, Jun-Ming

Subjects
Condensed Matter - Materials Science
Abstract

Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been inhibited by the challenge of selective control of switching pathways. Here we report an approach to selectively control 71{\deg} ferroelastic and 180{\deg} ferroelectric switching paths by combining the out-of-plane electric field and in-plane trailing field in multiferroic BiFeO3 thin films with periodically ordered 71{\deg} domain wall. Four-state polarization states can be deterministically achieved and reversibly controlled through precisely selecting different switching paths. Our studies reveal the ability to obtain multiple polarization states for the realization of multi-state memories and magnetoelectric coupling based devices.

Published
2022
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6. Domain evolution in BiFeO3 epitaxial nanoisland array via post-annealing.

Author

Tian, Guo, Zhang, Xingchen, Wang, Gui, Jin, Jun, Zhou, Houlin, Dai, Ji-Yan, Liu, Jun-Ming, and Gao, Xingsen

Subjects
TOPOLOGICAL property, STRIPES, OXYGEN
Abstract

We describe the impact of post-annealing on ferroelectric-domain structures in arrays of BiFeO3 (BFO) epitaxial nanoislands, which exhibit a domain evolution from an initial 71° stripe/vortex domains to center-convergent topological domains. These results suggest that the increase and redistribution of charged defects, e.g., oxygen vacancies, in BFO nanoislands play a crucial role in driving the formation of center-type domain structures. The observation of defect-driven domain evolution in BFO nanoislands provides a path for further exploring their formation mechanism, topological properties, novel functionalities, and potential applications. [ABSTRACT FROM AUTHOR]

Published
2024
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26. Achieved excellent energy storage performance under moderate electric field in BaTiO3-modified Bi0.5Na0.5TiO3-based lead-free ceramics via multiple synergistic design.

Author

Miao, Xiangluo, Jing, Run, Zhang, Zhenhui, Zhang, Xiangbin, Zhang, Shibang, Li, Pengfei, Wang, Changan, Leung, Chung Ming, Gao, Xingsen, and Zeng, Min

Abstract

Dielectric capacitors show great potential for use in pulse power devices due to their high power density. However, achieving ultrahigh recoverable energy density (Wrec) and efficiency (η) remains a challenge, limiting their applications. To address this, Na0.5Bi0.5TiO3–BaTiO3 (NBT-BT) ceramics were optimized for energy storage devices operating at a relatively low electric field (E). This study introduces a synergistic optimization strategy by incorporating Ca(Hf0.7Zr0.3)O3 (CHZ) into 0.93NBT–0.07BT (BNBT) ceramics. The addition of CHZ, in concentrations ranging from x = 0.00 to 0.18, significantly enhances the differences between saturation and remnant polarization from 15.6 μC cm−2 to 42.5 μC cm−2, while reducing the grain size from 2.44 μm to 620 nm. An optimal Wrec of ∼5.09 J cm−3 with η of ∼77% was achieved in BNBT–0.14CHZ ceramics at a moderate electric field (283 kV cm−1). Moreover, the energy storage density and efficiency exhibited good frequency stability (10–1000 Hz), temperature stability (25–150 °C) and fatigue resistance (1–104 cycles). A fast discharge time (∼72 ns) was concurrently realized at x = 0.14 ceramics. These results suggest that the eco-friendly BNBT–0.14CHZ ceramic is a promising candidate for application in dielectric energy storage capacitors under moderate electric field. [ABSTRACT FROM AUTHOR]

Published
2025
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27. In situ training of an in-sensor artificial neural network based on ferroelectric photosensors.

Author

Lin, Haipeng, Ou, Jiali, Fan, Zhen, Yan, Xiaobing, Hu, Wenjie, Cui, Boyuan, Xu, Jikang, Li, Wenjie, Chen, Zhiwei, Yang, Biao, Liu, Kun, Mo, Linyuan, Li, Meixia, Lu, Xubing, Zhou, Guofu, Gao, Xingsen, and Liu, Jun-Ming

Subjects
ARTIFICIAL neural networks, COMPUTER vision, ARTIFICIAL intelligence, IMAGE processing, TRAFFIC signs & signals
Abstract

In-sensor computing has emerged as an ultrafast and low-power technique for next-generation machine vision. However, in situ training of in-sensor computing systems remains challenging due to the demands for both high-performance devices and efficient programming schemes. Here, we experimentally demonstrate the in situ training of an in-sensor artificial neural network (ANN) based on ferroelectric photosensors (FE-PSs). Our FE-PS exhibits self-powered, fast (<30 μs), and multilevel (>4 bits) photoresponses, as well as long retention (50 days), high endurance (109), high write speed (100 ns), and small cycle-to-cycle and device-to-device variations (~0.66% and ~2.72%, respectively), all of which are desirable for the in situ training. Additionally, a bi-directional closed-loop programming scheme is developed, achieving a precise and efficient weight update for the FE-PS. Using this programming scheme, an in-sensor ANN based on the FE-PSs is trained in situ to recognize traffic signs for commanding a prototype autonomous vehicle. Moreover, this in-sensor ANN operates 50 times faster than a von Neumann machine vision system. This study paves the way for the development of in-sensor computing systems with in situ training capability, which may find applications in new data-streaming machine vision tasks. In-sensor computing with in-situ training capability is promising for machine vision applications, yet their implementation remains a challenge. Here, the authors demonstrate in-situ training of an in-sensor artificial neural network using ferroelectric photosensors. [ABSTRACT FROM AUTHOR]

Published
2025
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