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The robustness of a recently developed method to obtain the recombination current–density (J0,met) under the front metallization fingers of silicon solar cells is investigated. This method requires a voltage‐calibrated photoluminescence (PL) imaging setup and can be applied on finished solar cells without any dedicated sample preparation. The Fourier‐transform photoluminescence method (FTPL) compares the Fourier spectrum of a PL image with an analytical model to deduce J0,met. It is demonstrated here, from sensitivity analysis, repeated measurements, and case studies, that the method allows to differentiate groups of solar cells having undergone different metallization conditions. Moreover, the comparison of the FTPL method with I–V measurements and with the area‐weighted approach for the J0,met determination shows similar results. Finally, using Quokka modeling, some limitations of the method are identified, and opportunities for improvement are proposed to further enhance this characterization technique. [ABSTRACT FROM AUTHOR]

Industrial mass production of solar cells is at a transition toward carrier‐selective junction solar cells with passivating contacts such as TOPCon, POLO, or heterojunction technology (HJT). At the same time, many manufacturers consider switching from p‐type Cz‐Si to n‐type Cz‐Si wafers. This contribution indicates that Ga‐doped p‐type Cz‐Si material is still a viable option for the new type of devices while giving an opportunity to benefit from lower wafer cost. The minority carrier diffusion lengths that are an order of magnitude larger than the thickness of the studied HJT and TOPCoRE devices are reported. Stability aspects for operation in the field are discussed. Best TOPCoRE solar cells on Ga‐doped Cz‐Si show a 0.2% higher efficiency than their co‐processed n‐type counterparts. [ABSTRACT FROM AUTHOR]

The current–voltage measurement is the most important measurement in solar cell quality control. As the contacting process of cells results in mechanical stress and consumes a significant amount of measurement time, this work presents an IV characterization based on contactless measurements only. An empirical model is introduced that can derive the full IV curve and IV parameters as the open‐circuit voltage, short‐circuit current density, fill factor, and efficiency. As a basis, a series of photoluminescence and contactless electroluminescence images and spectral reflectance measurements are used. An advantage of the model's convolutional neural network design lies in the semantic compression of local image structures across the input data. Within an ablation study, it is shown that the empirical model is well suited to combine these data sources, which is the optimal input configuration for contactless IV derivation. The accuracy, e.g., with an error in efficiency of 0.035%abs and correlation of over 99%, is similar to comparing two contacting IV measurement devices. The contactless IV curves also have a close fit to their contacted counterparts. Within simulations on module level, it is demonstrated that contactless binning performs as well as contacting binning and does not result in any additional mismatch loss. [ABSTRACT FROM AUTHOR]

The authors present their work on laser‐enhanced contact optimization (LECO) on iTOPCon solar cells. LECO improves the metal‐semi‐conductor contact resistivity ρc on the boron emitter and the n‐TOPCon side from an underfired (thermal budget too low) state of 2.9 and 14.1 mΩcm2 to an enhanced state of 1.8 and 2.9 mΩcm2. Therefore, it enables the reduction of the optimal peak firing temperature, which leads to a decrease of metal induced recombination mainly on the boron emitter side and to minor degree on the n‐TOPCon side, as shown in this work. Ultimately, LECO improves iTOPCon solar cells conversion efficiency by 0.6%abs compared with the optimal fired, untreated reference. Submitting those cells to 140°C and 2 suns equivalent irradiation for more than 4 h shows no impact on the conversion efficiency or any sign of light and elevated temperature‐induced degradation (LeTID). Confirmed by ISE CalLab, LECO improved iTOPCon solar cells reach 23.8% and 24.1% conversion efficiency on industrial typical wafer formats and processes. [ABSTRACT FROM AUTHOR]

Low‐cost and high‐efficiency tandem solar cells are promising candidates for a future industrial mass production. Nowadays, the passivated emitter and rear cell (PERC) technology makes up the major market share; therefore, it is an attractive option to use the PERC technology as bottom cell concept for a perovskite–silicon tandem device. Long‐term optimization of the PERC technology led to highly efficient, low‐cost, and mature devices. For PERC‐like bottom cells, mainly an adapted front‐side design is needed: Design constrains of a PERC single junction are relaxed to some extent, because such an updated PERC bottom cell only needs to absorb long wavelength photons, transports about half the current and, in a monolithic tandem, lateral transport, and the use of firing‐through local silver contacts is not a mandatory prerequisite. Consequently, to make PERC suitable for tandem application, a systematic reevaluation of the current PERC technology is performed here considering five different front‐side concepts. We investigate locally contacted and full‐area transparent conducting oxide (TCO)‐based interconnection concepts for PERC, as well as the full‐area tunnel oxide passivating contact (TOPCon). Our simulation work elaborates on the advantages and physical constrains of each concept and gives guidelines for the optimization of the phosphorus diffused emitter and front interconnection layers. We conclude that both full‐area and locally contacted front‐side concepts are promising candidates for achieving tandem cell efficiencies of about 30%. In this work we focus on how to make the mainstream silicon solar cell technology – namely the passivated emitter and rear cell (PERC) – suitable as bottom cell in a perovskite‐silicon tandem device. A detailed optical and electrical simulation model incoporating the parasitic absorption losses and (tunneling) transport at the different bottom cell front side concepts (including passivating contact schemes like TOPCon) was elaborated in Sentaurus TCAD which enables to predict the tandem effi-ciency poten-tial of several PERC‐like bottom cells. [ABSTRACT FROM AUTHOR]

We present an analytical model for the internal resistance of passivated emitter and rear totally diffused (PERT) solar cells. First, we apply the model of Saint-Cast for the spreading resistance of a passivated emitter and rear cell (PERC) structure with line-shaped contacts. To account for the additional vertical current flow through the silicon wafer and the lateral current flow through the back surface field of a PERT structure, we add a parallel current path using common analytical expressions. We compare the analytical models with two-dimensional numerical simulations based on Quokka 3 and find deviations of less than 6% for the internal resistance. In addition, we compare the analytical model of the internal resistance of PERC and PERT solar cells with experimental data of the series resistance of PERC and PERT solar cells. [ABSTRACT FROM AUTHOR]

In this work, we analyse passivated emitter and rear cells (PERC), based on wafers made from seed manipulation for artificially controlled defects technique (SMART) monocrystalline silicon, magnetically grown and conventional Czochralski (mCz and Cz) silicon, and high‐performance multicrystalline (hpm) silicon. All wafers were processed identically except for the hpm wafers, which received an acidic texture instead of random pyramids. The energy conversion efficiency η of the SMART cells of 21.4 % is similar to the mCz cells (21.5 %) while being more than 1.9%abs higher than for the hpm cells. Furthermore, we here show for the first time that light‐ and elevated temperature‐induced degradation (LeTID) is mitigated in hpm, Cz and SMART PERC cells without significant losses in initial efficiency by an adapted fast‐firing process, incorporating slower firing ramps that can be used in industrial production. The cells that are fired with these ramps show no significant efficiency loss (1%rel<Δη<2%rel) during LeTID testing at 75°C and 0.15 suns illumination for 1100 h, while the reference fast‐firing process results in efficiency losses of 5%rel<Δη<6%rel due to LeTID. For Cz cells that have been treated to regenerate the boron–oxygen defect prior to LeTID testing, the maximum degradation was reduced from Δη≈3%rel to Δη≈1.5%rel. [ABSTRACT FROM AUTHOR]

In this work, the recently proposed band-gap narrowing model by Yan and Cuevas [J. Appl. Phys. 114, 044508 (2013)] is evaluated by simulations of the recombination pre-factor J0 of highly phosphorus doped, passivated crystalline silicon surfaces, which are particularly relevant for solar cell applications. The results were fitted to experimental J0 data measured on a large range of samples exhibiting different dopant profiles and passivation coatings, both for planar and textured surfaces. For each sample, the surface recombination velocity parameter Sp was extracted by fitting the simulation results to the experimental data. We show that the Yan and Cuevas' model developed for Fermi-Dirac statistics leads to a smooth and monotonically increasing curve for Sp as a function of the surface dopant concentration Nsurf, for both investigated passivation layers. We provide a parameterization for this relation and compare the findings with those obtained with the widely used model by Schenk [J. Appl. Phys. 84, 3684 (1998)]. On the other hand, we show that the apparent band gap narrowing of Yan and Cuevas developed for use with Boltzmann statistics cannot be used to describe the experimental data, requiring unphysical negative Sp values for high Nsurf. [ABSTRACT FROM AUTHOR]

Spatially resolved determination of solar cell parameters is beneficial for loss analysis and optimization of conversion efficiency. One key parameter that has been challenging to access by an imaging technique on solar cell level is short-circuit current density. This work discusses the robustness of a recently suggested approach to determine short-circuit current density spatially resolved based on a series of lock-in thermography images and options for a simplified image acquisition procedure. For an accurate result, one or two emissivity-corrected illuminated lock-in thermography images and one dark lock-in thermography image have to be recorded. The dark lock-in thermography image can be omitted if local shunts are negligible. Furthermore, it is shown that omitting the correction of lock-in thermography images for local emissivity variations only leads to minor distortions for standard silicon solar cells. Hence, adequate acquisition of one image only is sufficient to generate a meaningful map of short-circuit current density. Beyond that, this work illustrates the underlying physics of the recently proposed method and demonstrates its robustness concerning varying excitation conditions and locally increased series resistance. Experimentally gained short-circuit current density images are validated for monochromatic illumination in comparison to the reference method of light-beam induced current. [ABSTRACT FROM AUTHOR]

Herein, boron‐doped cast‐monocrystalline silicon wafers that have been fabricated using the Seed Manipulation for ARtificially controlled defect Technique (SMART mono‐Si) are examined. Their suitability for passivated emitter and rear cell (PERC) fabrication is investigated. Applying a zero busbar layout energy conversion efficiencies of η = 21.9% for SMART mono‐Si, η = 22.2% for gallium‐doped Cz‐Si (Cz‐Si:Ga), and η = 22.3% for boron‐doped Cz‐Si (Cz‐Si:B) are achieved at similar doping levels between 0.7 Ω cm ≤ ρB ≤ 1.0 Ω cm. Therefore, SMART mono‐Si PERCs show almost the same performance as Cz‐Si PERCs. Apart from the performance of SMART mono‐Si PERCs, the minority charge carrier bulk lifetime τB of the SMART mono‐Si wafers after different high‐temperature process steps in the PERC process flow is investigated. After emitter formation, this analysis confirms the high material quality of SMART mono‐Si yielding τB ≈ 1.3 ms at an injection level of Δn = 1015 cm−3. The bulk lifetime after firing is similar to the level determined for mCz‐Si:B and Cz‐Si:Ga reference wafers of similar doping level. [ABSTRACT FROM AUTHOR]

Herein, a method for advanced series resistance imaging via electroluminescence (EL) for silicon solar cells is presented. The well‐known method by Haunschild et al. is revisited. The Fuyuki assumption of a linear relation between diffusion length and EL signal is shown to be not applicable to silicon devices nowadays due to larger minority charge carrier diffusion lengths and thinner solar cells. A new relation derived by Breitenstein is used here instead. The updated method for series resistance and saturation current imaging based on two EL images, which show a far superior separation of contrast and almost 60% shorter data acquisition times in comparison with the original method by Haunschild, is presented. The Weber contrast of the unwanted signal caused by recombination in resistance image is reduced from 0.89 to 0.44, using the advanced method for a prominent feature on the sample cell. The contrast due to resistance stays at the same level. The dark saturation current density images show 20% higher peaks at recombination active areas and also a 5% low. [ABSTRACT FROM AUTHOR]

A method for analyzing the power losses of solar cells is presented, supplying a complete balance of the incident power, the optical, thermodynamic, and electrical power losses and the electrical output power. The involved quantities have the dimension of a power density (units: W/m2), which permits their direct comparison. In order to avoid the over-representation of losses arising from the ultraviolet part of the solar spectrum, a method for the analysis of the electrical free energy losses is extended to include optical losses. This extended analysis does not focus on the incident solar power of, e.g., 1000 W/m2 and does not explicitly include the thermalization losses and losses due to the generation of entropy. Instead, the usable power, i.e., the free energy or electro-chemical potential of the electron-hole pairs is set as reference value, thereby, overcoming the ambiguities of the power balance. Both methods, the power balance and the free energy loss analysis, are carried out exemplarily for a monocrystalline p-type silicon metal wrap through solar cell with passivated emitter and rear (MWT-PERC) based on optical and electrical measurements and numerical modeling. The methods give interesting insights in photovoltaic (PV) energy conversion, provide quantitative analyses of all loss mechanisms, and supply the basis for the systematic technological improvement of the device. [ABSTRACT FROM AUTHOR]

Current studies reveal the expectation that photovoltaic (PV) energy conversion will become the front-runner technology to stem against the extent of global warming by the middle of this century. In 2019, the passivated emitter and rear cell (PERC) design has taken over the majority of global photovoltaic solar cell production. The objective of this paper is to review the fundamental physics of the underlying cell architecture, its development over the past few decades to an industry main stream product, as well as an in-depth characterization of current cells and the future potential of the device structure. The early development of PERCs was set by an intriguing series of improvements starting in 1989 and resulting in a long-standing energy conversion efficiency record of 25.0% set up in 1999. It took a decade of intense technological development to implement this structure as an upgrade to existing production lines and another decade to increase the efficiency of industrially manufactured cells to over 22%. Our analysis of state-of-the-art large-area screen-printed PERCs is based on the pilot-line technology in the Photovoltaic Technology Evaluation Center at the Fraunhofer ISE, which is assumed to be representative of current state-of-the art cell processing. The main recent cell efficiency improvements have been achieved thanks to fine line metallization taking advantage of the high quality emitter formation and passivation and to improvements in material quality. In order to enhance the energy yield of the PV modules, innovations in interconnection technology like multibusbar and shingling technology as well as bifaciality are supported by PERC developments. Over the years, ongoing improvements have been made in the understanding of PERCs by analytical and numerical modeling of these devices. We show a study based on 3D numerical modeling and an extrapolation of the PERC device structure and technology to achieve an efficiency of 26%. This result surpasses earlier investigations due to the combination of technology components, as further improved front contact and emitter design as well as rear passivation and mirrors. We expect that PERCs can also play a strong role at the bottom of multijunction solar cells and will defend a strong position in global PV production beyond the end of the now starting decade. [ABSTRACT FROM AUTHOR]

We present a paper about vignetting in the context of luminescence imaging of solar cells and wafers. The physical phenomenon vignetting and its contributions are reviewed. A simple model to simulate vignetting and a method of measuring the vignette by the variation of aperture are introduced. The simulated and the measured results are compared showing good agreement with less than 2.1% deviation. For the investigated luminescence setup, it is shown that vignetting can cause an intensity decrease of up to 20% toward the image corners for wide opened apertures. To quantify the correction quality, a correction quality factor is adopted from a recent publication and applied to the suggested method. Additionally, the correction quality is quantified by investigating the linear correlation between luminescence intensity and charge carrier product measured via photoconductance on a suitably prepared sample. The correlation coefficient increases from R2 = 0.92 to R2 = 0.95 after the correction. [ABSTRACT FROM AUTHOR]

We determine the uncertainties on simulated efficiencies of silicon solar cells due to uncertainties of the fundamental physical models. To determine these, we refit their parameters to the underlying measurement data. Using a metamodeling and Monte Carlo simulation approach, we then deduce how these propagate to the simulated solar cell efficiency. This is evaluated for 150- $\mu \text{m}$ -thick 1 $\Omega $ cm p-type standard and advanced silicon passivated emitter and rear cells (PERC), as well as for an ideal silicon solar cell. When sticking to the best-known set of physical models, we determine resulting efficiency uncertainties as low as 0.06%abs for usual PERC cells and 0.1%abs for an ideal cell. In a variance-based sensitivity analysis, we find the uncertainties of the bandgap and the hole density-of-states effective mass as well as the Auger recombination in the limiting case to dominate the efficiency uncertainty. In addition to these relatively low uncertainties, larger discrepancies may arise when applying different physical models for otherwise fixed device properties. We determine comparably large efficiency discrepancies of up to 0.6%abs for the two most prominent bandgap narrowing (BGN) models, and up to 0.15%abs for the two most recent parameterizations of free carrier absorption. We also show evidence that for the specific case of a strong space charge region being present at a recombining surface, Schenk’s BGN model fails to replicate experiments. Those discrepancies highlight the necessity of further research on those models. Finally, an error of up to 0.08%abs is observed by simplifying diffused regions on textured surfaces to a planar geometry. [ABSTRACT FROM AUTHOR]

The loss analysis of state-of-the-art p-type Czochralski-grown silicon passivated emitter and rear solar cells (PERC) fabricated in a manner close to industrial production is presented in this paper. The 6-inch solar cells are featuring a homogeneous emitter on the front side, an Al2O3 passivation layer and local contacts on the rear side. The peak energy conversion efficiencies obtained are 21.1% for a standard antireflection coating (ARC) and 21.4% for a double-layer ARC. The loss analysis is based on an extended characterization of the solar cells and of special samples, which allow the separation of the contributions of each region of the solar cell including metallization. Their impact is determined experimentally on the open-circuit voltage, the short-circuit current density, and the fill factor. Based on the measurements, the devices are numerically simulated. The free energy losses are analyzed using the simulation model. Based on the results from the loss analysis, it is found that the integration of a selective emitter structure and the further improvement of the rear surface would allow for efficiencies above 22% in the short term. [ABSTRACT FROM AUTHOR]

Bifacial solar cells and modules are a promising approach to increase the energy output of photovoltaic systems, and therefore decrease levelized cost of electricity (LCOE). This work discusses the bifacial silicon solar cell concepts PERT (passivated emitter, rear totally diffused) and BOSCO (both sides collecting and contacted) in terms of expected module cost and LCOE based on in-depth numerical device simulation and advanced cost modelling. As references, Al-BSF (aluminium back-surface field) and PERC (passivated emitter and rear) cells with local rear-side contacts are considered. In order to exploit their bifacial potential, PERT structures (representing cells with single-sided emitter) are shown to require bulk diffusion lengths of more than three times the cell thickness. For the BOSCO concept (representing cells with double-sided emitter), diffusion lengths of half the cell thickness are sufficient to leverage its bifacial potential. In terms of nominal LCOE, BOSCO cells are shown to be cost-competitive under monofacial operation compared with an 18% efficient (≙ pMPP = 18 mW/cm2) multicrystalline silicon (mc-Si) Al-BSF cell and a 19% mc-Si PERC cell for maximum output power densities of pMPP ≥ 17.3 mW/cm2 and pMPP ≥ 18.1 mW/cm2, respectively. These values assume the use of $10/kg silicon feedstock for the BOSCO and $20/kg for the Al-BSF and PERC cells. For the PERT cell, corresponding values are pMPP ≥ 21.7 mW/cm2 and pMPP ≥ 22.7 mW/cm2, respectively, assuming the current price offset (≈50%, at the time of October 2014) of n-type Czochralski-grown silicon (Cz-Si) compared with mc-Si wafers. The material price offset of n-type to p-type Cz-Si wafers (≈15%, October 2014) currently accounts for approximately 1 mW/cm2, which correlates to a conversion efficiency difference of 1%abs for monofacial illumination with 1 sun. From p-type mc-Si to p-type Cz-Si (≈30% wafer price offset, October 2014), this offset is approximately 2.5 mW/cm2 for a PERT cell. When utilizing bifacial operation, these required maximum output power densities can be transformed into required minimum rear-side illumination intensities for arbitrary front-side efficiencies ηfront by means of the performed numerical simulations. For a BOSCO cell with ηfront = 18%, minimum rear-side illumination intensities of ≤ 0.02 suns are required to match a 19% PERC cell in terms of nominal LCOE. For an n-type Cz-Si PERT cell with ηfront = 21%, corresponding values are ≤ 0.11 suns with 0.05 suns being the n-type to p-type material price offset. This work strongly motivates the use of bifacial concepts to generate lowest LCOE. Copyright © 2016 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

Bifacial applications are a promising way to increase the performance of photovoltaic systems. Two silicon solar cell concepts suitable for bifacial operation are the passivated emitter, rear totally diffused (PERT) and the both sides collecting and contacted (BOSCO) cell concepts. This work investigates the bifacial potential of these concepts by means of in-depth numerical device simulation and experiment with a focus on the impact of varying material quality. It is shown that the PERT cell concept (representing a structure with front-side emitter only) requires high-minority-carrier-diffusion-length substrates with Lbulk > 3 × W (with cell thickness W) to exploit its bifacial potential, while the BOSCO cell (representing a structure with double-sided emitter) can already utilise its bifacial potential on substrates with significantly lower diffusion lengths down to Lbulk ≈ 0.5 × W. Experimentally, BOSCO cells with and without activated rear-side emitter are compared. For rear-side illumination, the activated rear-side emitter is measured to increase internal quantum efficiency at wavelengths λ < 850 nm by up to 45%abs (factor of 9) and 30%abs (factor of 2) for cells processed on p-type multicrystalline silicon substrates with Lbulk ≈ 0.3 × W and Lbulk ≈ 2.6 × W, respectively. For PERT cells processed on n-type Czochralski-grown silicon substrates, an according increase in internal quantum efficiency for rear-side illumination of more than 20%abs (factor of 1.3) is measured when changing from a substrate with Lbulk ≈ 3.0 to 10.0 × W. The performed simulations and experiments demonstrate that the BOSCO cell concept is a promising candidate to successfully exploit bifacial gain also on low- to medium-diffusion-length substrates such as p-type multicrystalline silicon, while PERT cells require a high-diffusion-length substrate to utilise their bifacial potential. Furthermore, the BOSCO cell concept is shown to be a promising option to achieve highest output power densities, even when using lower quality and therefore possibly more cost-effective silicon substrates. Copyright © 2016 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

We present an approach to predict the equilibrium temperature of hot spots in crystalline silicon solar cells based on the analysis of their temporal evolution right after turning on a reverse bias. For this end, we derive an analytical expression for the time-dependent heat diffusion of a breakdown channel that is assumed to be cylindrical. We validate this by means of thermography imaging of hot spots right after turning on a reverse bias. The expression allows to be used to extract hot spot powers and radii from short-term measurements, targeting application in inline solar cell characterization. The extracted hot spot powers are validated at the hands of long-term dark lock-in thermography imaging. Using a look-up table of expected equilibrium temperatures determined by numerical and analytical simulations, we utilize the determined hot spot properties to predict the equilibrium temperatures of about 100 industrial aluminum back-surface field solar cells and achieve a high correlation coefficient of 0.86 and a mean absolute error of only 3.3 K. [ABSTRACT FROM AUTHOR]

Bifacial solar modules are expected to increase their market share in the coming years. To date, most bifacial cells in production and under research are realized on n-type silicon substrates. However, p-type silicon has been dominating photovoltaic industry, partly due to its lower cost. In this work, we present an approach to combine bifacial applications with the industrial p-type passivated emitter and rear (PERC) structure: a bifacial PERC cell (biPERC). Simulation results are presented that showcase a high potential for bifacial gains of the biPERC cell. First experimental results of the biPERC concept on large-area multicrystalline silicon substrates yield a monofacial efficiency of 17.8%. The biPERC cell, therefore, is an easy-to-apply modification to a PERC route and enables higher output powers due to bifacial applicability. [ABSTRACT FROM AUTHOR]

We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplified in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current. [ABSTRACT FROM AUTHOR]

The BOSCO solar cell represents a bifacial structure with double-sided collection. The structure allows the use of standard module interconnection technology and favours the use of material with low to medium diffusion length and low resistivity for maximum benefit towards other structures, such as Al-BSF and PERC. Within this work, we present first results on different multicrystalline silicon materials yielding a monofacial efficiency of 17.4% on large-area wafers from block-cast mc-Si. This value represents a gain of ∼0.7%abs compared to Al-BSF cells processed in parallel. The applicability for bifacial operation is demonstrated by a significantly increased quantum efficiency for rear side illumination. These results make the BOSCO solar cell concept a promising candidate to further boost the output of utility-scale PV plants even when using low-cost wafers of low to medium diffusion length material. [ABSTRACT FROM AUTHOR]