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1. Magnetic tunnel junctions with high magnetoresistance and small bias voltage dependence using epitaxial NiFe(111) ferromagnetic bottom electrodes

Author

Ji Hyung Yu, Hyuck Mo Lee, Hayashi, Masamitsu, Oogane, Mikihiko, Daibou, Tadaomi, Hiroaki, Nakamura, Kubota, Hitoshi, Ando, Yasuo, and Miyazaki, Terunobu

Subjects
Iron -- Magnetic properties, Nickel -- Magnetic properties, Oxygen -- Magnetic properties, Aluminum -- Magnetic properties, Physics
Abstract

The magnetic tunnel junctions (MTJs) are synthesized using Al-O insulating layers prepared on an epitaxial Ni(sub 80)Fe(sub 20) (NiFe) bottom electrode and on a polycrystalline NiFe bottom electrode and the differences in tunnel magnetoresistance (TMR) ratios and their bias dependences are discussed. The result indicates that output signals of the devices based on MTJs, can be enhanced by improving the insulating layer quality.

Published
2003

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