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Lepidocrocite-type titanates that reversibly intercalate sodium ions at low potentials (∼0.6 V vs Na/Na+) are promising anode candidates for sodium-ion batteries. However, large amounts of carbon additives are often used to improve their electrical conductivity and overcome poor cycling performance in the electrode composites. To ameliorate electronic transport issues of lepidocrocite titanate (K0.8Ti1.73Li0.27O4, KTL) in sodium-ion batteries, we have designed and synthesized heterostructures of exfoliated lepidocrocite-type titanium oxide (LTO) nanosheets with alternating carbon layers via a solution-based self-assembly approach. Positively charged dopamine (Dopa) was used as the carbon precursor and intercalated between negatively charged exfoliated titania nanosheets through electrostatic interaction. Dopa-intercalated LTO was then annealed under argon to form conductive carbon layers between titania sheets. The carbon content in the heterostructures was controlled by modifying the self-assembly conditions (i.e., pH, stirring duration, and Dopa-to-LTO ratio). Electrodes were prepared using carbonized heterostructures (LTO-C) without adding more carbon to the composites and tested in sodium half-cell configurations. Higher capacities and improved capacity retention over 250 cycles and lower impedance were observed, as the carbon content of LTO-C heterostructures was increased from 0% (LTO nanosheets) to 30%. These results indicate that the self-assembly approach for 2D heterostructured electrode materials is a promising strategy to overcome electronic transport limitations of layered transition-metal oxides and improve their electrochemical performance for next-generation energy storage applications. [ABSTRACT FROM AUTHOR]

Metal chalcogenide compounds have attracted interest as materials for next-generation semiconductors, catalysts, and device architectures. Hybrid compounds containing both a metal chalcogenide architecture and a supporting organic lattice combine the interesting structural and electronic properties of the material class with a configurable hybrid component that can lead to a wide range of tailorable materials. However, many of the methods available for preparing inorganic coordination polymers in this class require specialized solution-phase chemical preparations that are incompatible with solid-state fabrication techniques. Here, we prepare metal–organic chalcogenolates (MOChas) of copper, indium, lead, and tin from benzeneselenol or benzenethiol directly from the organochalcogen and corresponding metal in a tube furnace at a relatively modest temperature. Scanning electron microscopy and X-ray diffraction confirmed the conversion of the precursors to crystalline MOChas. X-ray photoelectron spectroscopy was used to investigate the chemical bonding for each of the materials and provides insight into the elemental composition of the synthesized compounds. This straightforward approach for preparing crystalline hybrid materials may be generalizable for the preparation of a wide variety of coordination compounds and complexes in form factors useful for subsequent development of device architectures. [ABSTRACT FROM AUTHOR]

In this work, we demonstrate thatcatalyst composition can be usedto direct the crystallographic growth axis of GaN nanowires. By adjustingthe ratio of gold to nickel in a bimetallic catalyst, we achievedselective growth of dense, uniform nanowire arrays along two nonpolardirections. A gold-rich catalyst resulted in single-crystalline nanowiregrowth along the ⟨11̅00⟩ or maxis, whereas a nickel-rich catalyst resulted in nanowire growthalong the ⟨112̅0⟩ or aaxis.The same growth control was demonstrated on two different epitaxialsubstrates. Using proper conditions, many of the nanowires were observedto switch direction midgrowth, resulting in monolithic single-crystalstructures with segments of two distinct orientations. Cathodoluminescencespectra revealed significant differences in the optical propertiesof these nanowire segments, which we attribute to the electronic structuresof their semipolar {112̅2} or {11̅01} sidewalls. [ABSTRACT FROM AUTHOR]

We synthesized Fe3O4nanoparticle/reduced graphene oxide (RGO-Fe3O4) nanocomposites and evaluated their performance as anodes in both half and full coin cells. The nanocomposites were synthesized through a chemical co-precipitation of Fe2橷 Fe3 the presence of graphene oxides within an alkaline solution and a subsequent high-temperature reduction reaction in argon (Ar) environment. The morphology and microstructures of the fabricated RGO-Fe3O4nanocomposites were characterized using various techniques. The results indicated that the Fe3O4nanoparticles had relatively homogeneous dispersions on the RGO sheet surfaces. These as-synthesized RGO-Fe3O4nanocomposites were used as anodes for both half and full lithium-ion cells. Electrochemical measurement results exhibit a high reversible capacity which is about two and a half times higher than that of graphite-based anodes at a 0.05C rate, and an enhanced reversible capacity of about 200 mAh g−1even at a high charge/discharge rate of 10C (9260 mA g−1) in half cells. Most important of all, these fabricated novel nanostructures also show exceptional capacity retention with the assembled RGO-Fe3O4/LiNi1/3Mn1/3Co1/3O2full cell at different C rates. This outstanding electrochemical behavior can be attributed to the unique microstructure, morphology, texture, surface properties of the nanocomposites, and combinative effects from the different chemical composition in the nanocomposites. [ABSTRACT FROM AUTHOR]

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT's exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented. [ABSTRACT FROM AUTHOR]

Review: recent advances in synthetic methods; 35 refs. [ABSTRACT FROM AUTHOR]