1. Hot Photoluminescence in γ-In2Se3Nanorods
- Author
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Chen LC, Lan SM, Chen KH, Huang PJ, Chi GC, Lin TY, Yang MD, Hu CH, and Shen JL
- Subjects
InSe nanorods ,Hot photoluminescence ,Energy relaxation ,Materials of engineering and construction. Mechanics of materials ,TA401-492 - Abstract
Abstract The energy relaxation of electrons in γ-In2Se3nanorods was investigated by the excitation-dependent photoluminescence (PL). From the high-energy tail of PL, we determine the electron temperature (T e) of the hot electrons. TheT evariation can be explained by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The high-quality γ-In2Se3nanorods may be a promising material for the photovoltaic devices.
- Published
- 2008
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