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Identifying the oxidation structure of two-dimensional interfaces is crucial to improve surface chemistry and electronic properties. Beyond graphene with only phenyl rings, a novel carbon-nitrogen material, C3N, presents an intrinsic heterogeneous surface morphology where each phenyl ring is encircled by six nitrogen atoms, yet its atomistic oxidation structure remains unclear. Here, combining a series of density functional theory calculations and ab initio molecular dynamics simulations, we demonstrate that thermodynamically favorable oxidation loci are confined to the phenyl ring, and kinetic transformations of oxidation structures are feasible along the phenyl ring, whereas those toward nitrogen atoms are proven to be extremely difficult. These results are attributed to the lower barrier of oxygen atom migration along the phenyl ring, while the significantly high barriers toward nitrogen atoms are due to the heterogeneous potential energy surface for oxygen–C3N interaction. This work highlights the significance of surface morphology on the characteristics of oxidation structure, offering insights into tunable electronic properties via confined interfacial oxidation. [ABSTRACT FROM AUTHOR]

Background and Objectives: The study aimed to evaluate the performance of a predictive model using the kidney failure risk equation (KFRE) for end-stage renal disease (ESRD) in diabetes and to investigate the impact of glomerular filtration rate (GFR) as estimated by different equations on the performance of the KFRE model in diabetes. Design, Setting, Participants, and Measurements: A total of 18,928 individuals with diabetes without ESRD history from the UK Biobank, a prospective cohort study initiated in 2006–2010, were included in this study. Modification of diet in renal disease (MDRD), chronic kidney disease epidemiology collaboration (CKD-EPI) or revised Lund–Malmö (r-LM) were used to estimate GFR in the KFRE model. Cox proportional risk regression was used to determine the correlation coefficients between each variable and ESRD risk in each model. Harrell's C-index and net reclassification improvement (NRI) index were used to evaluate the differentiation of the models. Analysis was repeated in subgroups based on albuminuria and hemoglobin A1C (HbA1c) levels. Results: Overall, 132 of the 18,928 patients developed ESRD after a median follow-up of 12 years. The Harrell's C-index based on GFR estimated by CKD-EPI, MDRD, and r-LM was 0.914 (95% CI = 0.8812–0.9459), 0.908 (95% CI = 0.8727–0.9423), and 0.917 (95% CI = 0.8837–0.9496), respectively. Subgroup analysis revealed that in diabetic patients with macroalbuminuria, the KFRE model based on GFR estimated by r-LM (KFRE-eGFRr-LM) had better differentiation compared to the KFRE model based on GFR estimated by CKD-EPI (KFRE-eGFRCKD-EPI) with a KFRE-eGFRr-LM C-index of 0.846 (95% CI = 0.797–0.894, p = 0.025), while the KFRE model based on GFR estimated by MDRD (KFRE-eGFRMDRD) showed no significant difference compared to the KFRE-eGFRCKD-EPI (KFRE-eGFRMDRD C-index of 0.837, 95% CI = 0.785–0.889, p = 0.765). Subgroup analysis of poor glycemic control (HbA1c >8.5%) demonstrated the same trend. Compared to KFRE-eGFRCKD-EPI (C-index = 0.925, 95% CI = 0.874–0.976), KFRE-eGFRr-LM had a C-index of 0.935 (95% CI = 0.888–0.982, p = 0.071), and KFRE-eGFRMDRD had a C-index of 0.925 (95% CI = 0.874–0.976, p = 0.498). Conclusions: In adults with diabetes, the r-LM equation performs better than the CKD-EPI and MDRD equations in the KFRE model for predicting ESRD, especially for those with macroalbuminuria and poor glycemic control (HbA1c >8.5%). [ABSTRACT FROM AUTHOR]

Background: Diabetic kidney disease (DKD) lacks a simple and relatively accurate predictor. The Triglyceride–Glucose (TyG) Index is a proxy of insulin resistance, but the association between the TyG Index and DKD is less certain. We investigated if the TyG Index can predict DKD onset effectively. Materials and Methods: Cross-sectional and longitudinal analyses were undertaken. In total, 1432 type-2 diabetes mellitus (T2DM) patients were included in the cross-sectional analysis. The TyG Index (calculated by ln [fasting triglycerides (mg/dL) × fasting glucose (mg/dL)/2]) was split into three tertiles. Associations of the TyG Index with microalbuminuria and estimated glomerular filtration rate (eGFR) < 60 mL/min/1.73 m2 were calculated. Longitudinally, 424 patients without DKD at baseline were followed up for 21 (range, 12– 24) months. The main outcome was DKD prevalence as defined with eGFR < 60 mL/min/1.73 m2 or continuously increased urinary microalbuminuria: creatinine ratio (> 30 mg/mL) over 3 months. Cox regression was used to analyze the association between the TyG Index at baseline and DKD. Receiver operating characteristics curve (ROC) analysis was used to assess the sensitivity and specificity of the TyG Index in predicting DKD. Results: In cross-sectional analysis, patients with a higher TyG Index had a higher risk of microalbuminuria (OR = 2.342, 95% CI = 1.744– 3.144, p < 0.001), and eGFR < 60 mL/min/1.73 m2 (1.696, 95% CI =1.096– 2.625, p = 0.018). Longitudinally, 94 of 424 participants developed DKD. After confounder adjustment, patients in the high tertile of the TyG Index at baseline had a greater risk to developing DKD than those in the low tertile (HR = 1.727, 95% CI = 1.042– 2.863, p = 0.034). The area under the ROC curve was 0.69 (0.63– 0.76). Conclusion: The TyG Index is a potential predictor for DKD in T2DM patients. Clinical Trial: Clinical Trials identification number = NCT03692884. [ABSTRACT FROM AUTHOR]

An efficient ferroelectric-enhanced side-gated single CdS nanowire (NW) ultraviolet (UV) photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from polarization of ferroelectric polymer, the depletion of the intrinsic carriers in the CdS NW channel is achieved, which significantly reduces the dark current and increases the sensitivity of the UV photodetector even after the gate voltage is removed. Meanwhile, the low frequency noise current power of the device reaches as low as 4.6 × 10−28 A2 at a source-drain voltage Vds = 1 V. The single CdS NW UV photodetector exhibits high photoconductive gain of 8.6 × 105, responsivity of 2.6 × 105 A W−1, and specific detectivity ( D*) of 2.3 × 1016 Jones at a low power density of 0.01 mW cm−2 for λ = 375 nm. In addition, the spatially resolved scanning photocurrent mapping across the device shows strong photocurrent signals near the metal contacts. This is promising for the design of a controllable, high-performance, and low power consumption ultraviolet photodetector. [ABSTRACT FROM AUTHOR]

In recent years, 2D layered materials have been considered as promising photon absorption channel media for next-generation phototransistors due to their atomic thickness, easily tailored single-crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband photon absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. In this paper, high-sensitivity phototransistors based on WS2 and MoS2 are proposed, designed, and fabricated with gold nanoparticles (AuNPs) embedded in the gate dielectric. These AuNPs, located between the tunneling and blocking dielectric, are found to enable efficient electron trapping in order to strongly suppress dark current. Ultralow dark current (10−11 A), high photoresponsivity (1090 A W−1), and high detectivity (3.5 × 1011 Jones) are obtained for the WS2 devices under a low source/drain and a zero gate voltage at a wavelength of 520 nm. These results demonstrate that the floating-gate memory structure is an effective configuration to achieve high-performance 2D electronic/optoelectronic devices. [ABSTRACT FROM AUTHOR]

In recent years, 2D layered materials have been considered as promising photon absorption channel media for next-generation phototransistors due to their atomic thickness, easily tailored single-crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband photon absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. In this paper, high-sensitivity phototransistors based on WS2 and MoS2 are proposed, designed, and fabricated with gold nanoparticles (AuNPs) embedded in the gate dielectric. These AuNPs, located between the tunneling and blocking dielectric, are found to enable efficient electron trapping in order to strongly suppress dark current. Ultralow dark current (10−11 A), high photoresponsivity (1090 A W−1), and high detectivity (3.5 × 1011 Jones) are obtained for the WS2 devices under a low source/drain and a zero gate voltage at a wavelength of 520 nm. These results demonstrate that the floating-gate memory structure is an effective configuration to achieve high-performance 2D electronic/optoelectronic devices. [ABSTRACT FROM AUTHOR]

Correlated vanadium dioxide (VO2) has shown promises in functional materials and advanced electronic devices with outstanding metal–insulator transition (MIT). The manipulations of MIT and structural phase transition in correlated oxides are among the major challenges in both fundamental science and technological applications. Herein, the modulation of MIT behaviors in one VO2 nanowire with an artificial oxidized domain induced by selected‐area chemical nanoengineering is described. The formation of an artificial oxidized domain enables to suppress MIT and stabilize the insulating phase above the MIT temperature of pristine VO2 nanowires, which leads to an enhanced MIT hysteresis and temperature. The creation of artificial domains and the modulation of MIT in correlated oxide nanowires help to both investigate the essential physics behind correlated nanomaterials and fabricate nanoscale multifunctional devices. [ABSTRACT FROM AUTHOR]