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Your search keyword '"Mehuys, D."' showing total 76 results
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76 results on '"Mehuys, D."'

18. Field demonstration of distributed Raman amplification with 3.8-dB Q-improvement for 5×120-km transmission.

Author

Garrett, L.D., Eiselt, M., Tkach, R.W., Dominic, V., Waarts, R., Giltner, D., and Mehuys, D.

Abstract

The benefits of distributed Raman amplification are demonstrated in a buried cabled field fiber. The performance improvement of 3.8 dB was achieved in a 5×120-km 10-Gb/s transmission experiment using 650-mW Raman amplification in each span without apparent damage to the fiber plant. The field results are compared to a similar laboratory experiment using a fusion-spliced fiber to evaluate the effect of finite optical reflections from nonfusion splices in the field fiber [ABSTRACT FROM PUBLISHER]

Published
2001
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19. High power, high efficiency antiguide laser arrays.

Author

Major Jr., J.S., Mehuys, D., Welch, D.F., and Scifres, D.R.

Subjects
*DIODES, *CHEMICAL vapor deposition
Abstract

Examines the fabrication of antiguide laser diode arrays. Indications of the far field patterns; Oscillation of two lateral spatial modes at 150 milliwatts; Growth of diode arrays by metalorganic chemical vapor deposition.

Published
1991
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20. Broad-area tandem semiconductor laser.

Author

Chen, T. R., Mehuys, D., Zhuang, Y. H., Mittelstein, M., Wang, H., Derry, P. L., Kajanto, M., and Yariv, A.

Subjects
*SEMICONDUCTOR lasers, *QUANTUM wells
Abstract

A tandem combination of a uniform gain broad-area semiconductor laser and a (lateral) periodic gain section displays a stable, near-diffraction-limited single-lobed far-field pattern. The GaAs/GaAlAs quantum well lasers display a high degree of coherence across 60-μm-wide apertures provided that the broad-area section is sufficiently long. [ABSTRACT FROM AUTHOR]

Published
1988
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21. Supermode control in diffraction-coupled semiconductor laser arrays.

Author

Mehuys, D., Mitsunaga, K., Eng, L., Marshall, W. K., and Yariv, A.

Subjects
*SEMICONDUCTOR lasers, *OPTICAL diffraction
Abstract

Supermode control is demonstrated theoretically and experimentally in diffraction-coupled semiconductor laser arrays. A linear theory is presented to determine the supermode threshold gain as a function of the coupling cavity length. By fabricating devices with different coupling cavity lengths, array operation in both the fundamental and highest order supermodes is achieved. [ABSTRACT FROM AUTHOR]

Published
1988
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23. High power monolithically integrated diode laser, preamplifier, and coherent beam expander.

Author

O'Brien, S., Mehuys, D., Welch, D.F., Parke, R., and Scifres, D.

Subjects
*BEAM splitters, *WAVEGUIDES, *LASERS, *ELECTRONIC amplifiers
Abstract

Determines an integrated prism beam expander using a leaky mode waveguide with a single mode distributed Bragg reflector laser and amplifier. Use of the expanded beam as an injection source for an amplifier; Similarities between leaky waveguides and prism coupling; Characteristics of the coherent beam expander.

Published
1992
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31. High power continuous wave blue light generation in KNbO[sub 3] using semiconductor amplifier....

Author

Goldberg, L., Busse, L.E., and Mehuys, D.

Subjects
CRYSTALS, NIOBATES, SEMICONDUCTOR diodes, SECOND harmonic generation
Abstract

Investigates the emission generation in potassium niobate crystals using a semiconductor amplifier seeded by a laser diode. Causes of the decrease in the conversion efficiency of the crystals; Use of an integrated master-oscillator-power amplifier; Application of second harmonic generation.

Published
1993
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32. High-power, diffraction-limited, monolithically integrated master oscillator/power amplifier.

Author

Welch, D. F., Waarts, R., Mehuys, D., Parke, R., Scifres, D., Craig, R., and Streifer, W.

Subjects
POWER amplifiers, ELECTRIC oscillators
Abstract

Monolithically integrated master oscillator/power amplifiers have been fabricated with a single-mode distributed Bragg reflector laser as the oscillator and a chain of amplifier output couplers defined by a single-mode waveguide gain region and a second-order grating detuned from the gain peak. The output of the amplifier chain is a single frequency and can be phased to obtain a diffraction-limited output up to an output power of 485 mW. [ABSTRACT FROM AUTHOR]

Published
1990
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