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Organic-inorganic metal halide perovskite devices have generated significant interest for LED, photodetector, and solar cell applications due to their attractive optoelectronic properties and substrate-choice flexibility1-4. These devices exhibit slow time-scale response, which have been explained by point defect migration5-6. In this work, we report the discovery of a room temperature intrinsic amplification process in methylammonium lead iodide perovskite (MAPbI3) that can be triggered by few photons, down to a single photon. The electrical properties of the material, by way of photoresponse, are modified by an input energy as small as 0.19 attojoules, the energy of a single photon. These observations cannot be explained by photo-excited electronic band-to-band transitions or prevailing model of photo-excited point defect migration since none of the above can explain the observed macroscopic property change by absorption of single or few photons. The results suggest the existence of an avalanche-like collective motion of iodides and their accumulation near the anode, which we will call ionic impact ionization (I3 mechanism). The proposed I3 process is the ionic analog of the electronic impact ionization, and has been considered impossible before because conventionally it takes far more energy to move ions out of their equilibrium position than electrons. We have performed first principle calculations to show that in MAPbI3 the activation energy for the I3 mechanism is appreciably lower than the literature value of the activation energy for the electronic impact ionization. The discovery of I3 process in perovskite material opens up possibilities for new classes of devices for photonic and electronic applications.