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Spin‐Orbit Torque (SOT) Magnetic Random‐Access Memories (MRAM) have shown promising results toward the realization of fast, non‐volatile memory systems. Oxidation of the heavy‐metal (HM) layer of the SOT‐MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of formation. Here, these differences are reconciled by performing a gradual oxidation procedure, which allows correlating the chemical structure to the physical properties of the stack. As an HM layer, Pt is chosen because of the strong SOT and the low enthalpy of formation of its oxides. The evidence of an oxide inversion layer at the ferromagnet (FM)/HM interface is found: the oxygen is drawn into the FM, while the HM remains metallic near the interface. Moreover, the oxygen migrates in the volume of the FM layer rather than being concentrated at the interface. Consequently, it is found that the intrinsic magnitude of the SOT is unchanged compared to the fully metallic structure. The previously reported apparent increase of SOTs is not intrinsic to platinum oxide and instead arises from systemic changes produced by oxidation. [ABSTRACT FROM AUTHOR]

We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin–orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications. [ABSTRACT FROM AUTHOR]

Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal by current pulses ranging from 180 ps to ms in Pt/Co/AlOx dots with lateral dimensions of 90 nm. We characterize the switching probability and critical current Ic as a function of pulse length, amplitude, and external field. Our data evidence two distinct regimes: a short-time intrinsic regime, where Ic scales linearly with the inverse of the pulse length, and a long-time thermally assisted regime, where Ic varies weakly. Both regimes are consistent with magnetization reversal proceeding by nucleation and fast propagation of domains. We find that Ic is a factor 3-4 smaller compared to a single domain model and that the incubation time is negligibly small, which is a hallmark feature of spin-orbit torques. [ABSTRACT FROM AUTHOR]

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5×1011 A/m2 in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell. [ABSTRACT FROM AUTHOR]

Recent demonstrations of magnetization switching induced by in-plane current injection in heavy metal/ferromagnetic heterostructures have drawn increasing attention to spin torques based on orbital-to-spin momentum transfer. The symmetry, magnitude and origin of spin-orbit torques (SOTs), however, remain a matter of debate. Here we report on the three-dimensional vector measurement of SOTs in AlOx/Co/Pt and MgO/CoFeB/Ta trilayers using harmonic analysis of the anomalous and planar Hall effects. We provide a general scheme to measure the amplitude and direction of SOTs as a function of the magnetization direction. Based on space and time inversion symmetry arguments, we demonstrate that heavy metal/ferromagnetic layers allow for two different SOTs having odd and even behaviour with respect to magnetization reversal. Such torques include strongly anisotropic field-like and spin transfer-like components, which depend on the type of heavy metal layer and annealing treatment. These results call for SOT models that go beyond the spin Hall and Rashba effects investigated thus far. [ABSTRACT FROM AUTHOR]

The propagation of magnetic domain walls induced by spin-polarized currents has launched new concepts for memory and logic devices. A wave of studies focusing on permalloy (NiFe) nanowires has found evidence for high domain-wall velocities (100 m s−1; refs , ), but has also exposed the drawbacks of this phenomenon for applications. Often the domain-wall displacements are not reproducible, their depinning from a thermally stable position is difficult and the domain-wall structural instability (Walker breakdown) limits the maximum velocity. Here, we show that the combined action of spin-transfer and spin-orbit torques offers a comprehensive solution to these problems. In an ultrathin Co nanowire, integrated in a trilayer with structural inversion asymmetry (SIA), the high spin-torque efficiency facilitates the depinning and leads to high mobility, while the SIA-mediated Rashba field controlling the domain-wall chirality stabilizes the Bloch domain-wall structure. Thus, the high-mobility regime is extended to higher current densities, allowing domain-wall velocities up to 400 m s−1. [ABSTRACT FROM AUTHOR]

Methods to manipulate the magnetization of ferromagnets by means of local electric fields or current-induced spin transfer torque allow the design of integrated spintronic devices with reduced dimensions and energy consumption compared with conventional magnetic field actuation. An alternative way to induce a spin torque using an electric current has been proposed based on intrinsic spin–orbit magnetic fields and recently realized in a strained low-temperature ferromagnetic semiconductor. Here we demonstrate that strong magnetic fields can be induced in ferromagnetic metal films lacking structure inversion symmetry through the Rashba effect. Owing to the combination of spin–orbit and exchange interactions, we show that an electric current flowing in the plane of a Co layer with asymmetric Pt and AlOx interfaces produces an effective transverse magnetic field of 1 T per 108 A cm−2. Besides its fundamental significance, the high efficiency of this process makes it a realistic candidate for room-temperature spintronic applications. [ABSTRACT FROM AUTHOR]

The article discusses a study by Guoqiang Yu and co-workers which demonstrates that spin orbit torques can switch the magnetization in perpendicularly magnetized thin films without an external magnetic field. Topics discussed include spin orbit interaction, centrosymmetric property of ferromagnetic metals and macroscopic switching of the magnetization. The microscopic mechanism shown in the study is useful for magnetic random access memories.

A phenomenology of magnetic chiral damping is proposed in the context of magnetic materials lacking inversion symmetry. We show that the magnetic damping tensor acquires a component linear in magnetization gradient in the form of Lifshitz invariants. We propose different microscopic mechanisms that can produce such a damping in ferromagnetic metals, among which local spin pumping in the presence of an anomalous Hall effect and an effective "s-d" Dzyaloshinskii-Moriya antisymmetric exchange. The implication of this chiral damping in terms of domain-wall motion is investigated in the flow and creep regimes. [ABSTRACT FROM AUTHOR]

We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 °C and characterized using x-ray-absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse (fieldlike) and longitudinal (antidampinglike) spin-orbit torques are composed of constant and magnetization-dependent contributions, both of which vary strongly with annealing. Such variations correlate with changes of the saturation magnetization and magnetic anisotropy and are assigned to chemical and structural modifications of the layers. The relative variation of the constant and anisotropic torque terms as a function of annealing temperature is opposite for the fieldlike and antidamping torques. Measurements of the switching probability using sub-μs current pulses show that the critical current increases with the magnetic anisotropy of the layers, whereas the switching efficiency, measured as the ratio of magnetic anisotropy energy and pulse energy, decreases. The optimal annealing temperature to achieve maximum magnetic anisotropy, saturation magnetization, and switching efficiency is determined to be between 240 and 270 °C. [ABSTRACT FROM AUTHOR]