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1. Amorphous silicon-carbon based p-i-n structures for electron flux conversion.

Author

Feoktistov, N.A., Florinskii, V.Yu., Morozova, L.E., and Pevtsov, A.B.

Subjects
EXCITON theory, AMORPHOUS substances
Abstract

Presents a study of the collection efficiency of electron-hole pairs in amorphous silicon-carbon based p-i-n structures under keV electronic irradiation. RF plasma deposition; Scanning electronic microscopy; Current-voltage characteristics and spectral dependence of the short-circuit current.

Published
1995
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