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Your search keyword '"Nasadoski, Jeffrey"' showing total 9 results
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9 results on '"Nasadoski, Jeffrey"'

1. DC and transient performance of 4H-SiC double-implant MOSFETs

Author

Losee, Pete A., Matocha, Kevin, Arthur, Stephen D., Nasadoski, Jeffrey, Stum, Zachary, Garrett, Jerome L., Schutten, Michael, Dunne, Greg, and Stevanovic, Ljubisa

Subjects
Diodes -- Evaluation, Voltage -- Evaluation, Metal oxide semiconductor field effect transistors -- Design and construction, Silicon carbide -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

SiC vertical MOSFETs are fabricated and characterized with blocking voltages of about 1 kV and a specific on-resistance as low as 8.3 m[omega].[cm.sup.2]. The internal body diode's reverse recovery characteristics have shown injection-limited conduction, which are attributed to the implanted P-anode layers.

Published
2008

3. Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications

Author

Bolotnikov, Alexander, primary, Losee, Peter, additional, Permuy, Alfred, additional, Dunne, Greg, additional, Kennerly, Stacey, additional, Rowden, Brian, additional, Nasadoski, Jeffrey, additional, Harfman-Todorovic, Maja, additional, Raju, Ravisekhar, additional, Tao, Fengfeng, additional, Cioffi, Philip, additional, Mueller, Frank J., additional, and Stevanovic, Ljubisa, additional

Published
2015
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