14 results on '"Odnoblyudov, Vladimir"'
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2. Contributors
3. Fundamentals of CTE-matched QST® substrate technology
4. Electrothermal performance of AlGaN/GaN lateral transistors with >10 μm thick GaN buffer on 200 mm diameter engineered substrates
5. 12 - Fundamentals of CTE-matched QST® substrate technology
6. (Invited) 200mm GaN Power: Technology and Commercialization Status on Scalable QST® Platform
7. Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates
8. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes
9. InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy
10. Lateral GaN JFET Devices on Large Area Engineered Substrates
11. Lateral GaN JFET Devices on 200 mm Engineered Substrates for Power Switching Applications
12. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates
13. Band anti‐crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes
14. InAs/InGaAsN quantum dots emitting at 1.55μm grown by molecular beam epitaxy
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