Search

A detailed research of the high-frequency noise sources and figures of merit (FOMs) of fabricated deep-submicrometer n-channel fully depleted silicon-on-insulator MOSFETs is presented, Together with the calculation of intrinsic noise source, the Monte Carlo simulator is able to reproduce the measurement for the main noise FOMs in the RF and microwave frequency ranges.

Hexagonal boron nitride encapsulation significantly improves carrier transport in graphene. This paper investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFETs) in terms of their intrinsic radio frequency (RF) performance, adding the effect of the series resistances at the terminals. For such a purpose, a drift-diffusion self-consistent simulator is prepared to get the GFET electrical characteristics. Both the mobility and saturation velocity are obtained by an ensemble Monte Carlo simulator upon considering the relevant scattering mechanisms that affect carrier transport. RF figures of merit are simulated using an accurate small-signal model. Results reveal that the cutoff frequency could scale up to the physical limit given by the inverse of the transit time. Projected maximum oscillation frequencies, in the order of few terahertz, are expected to exceed the values demonstrated by InP and Si-based RF transistors. The existing tradeoff between power gain and stability and the role played by the gate resistance are also studied. High power gain and stability are feasible even if the device is operated far away from current saturation. Finally, the benefits of device unilateralization and the exploitation of the negative differential resistance region to get negative-resistance gain are discussed. [ABSTRACT FROM AUTHOR]

This paper presents a detailed Monte Carlo study of the optimization of the dopant segregation (DS) layer in n-type Schottky barrier (SB)-MOSFET. It is shown that with a careful control of the DS layer parameters, dopant concentration (N dop ), and length (L dop ), the performance of the devices is significantly enhanced. The presence of the DS layer induces crucial effects in the injection processes at the Schottky contacts. The benefits of increasing the length and the doping level of the DS layer are studied from the microscopic point of view (transit times, average number of scatterings). The effect of varying these parameters is also analyzed through the nonquasi-static parameters of the small signal equivalent circuit, which can be useful for designers to improve the reliability of the SB-MOSFET technology. [ABSTRACT FROM AUTHOR]

We present a particle-based Monte Carlo investigation of the high frequency noise behavior of a double gate MOSFET. The effective potential approach has been considered for the description of vertical quantum confinement of carriers within the channel. The intrinsic noise sources and the main circuital noise parameters are studied, together with the static and dynamic parameters, thus allowing to provide a full comprehension of the inner physics of the device and elucidating the consequences of quantum mechanical space-quantization effects (like charge repulsion from the gate-oxide boundaries). Results show that neglecting quantum phenomena leads to an important overestimation of gate capacitance and device transconductance and an underestimation of the final influence of induced gate noise (via the normalized parameter R) on the circuital noise parameters at RF and microwave frequency ranges. [ABSTRACT FROM AUTHOR]