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Atomic-scale spectroscopic imaging of sputtered magnetic tunnel junction structures with a thick oxygen-rich MgO barrier reveals the diffusion of iron and cobalt into the MgO barrier from CoFeB electrodes. First principles calculations are performed to (1) confirm that Fe diffusion through Mg vacancies is energetically favorable, (2) quantify the reduction of interfacial perpendicular magnetic anisotropy due to Fe diffusion into MgO, and (3) predict that the presence of Fe impurities in MgO causes an increased leakage and a tunneling magnetoresistance decrease. Through the chemical shift of the Fe L3 edge and the peak ratio Fe L3/Fe L2 measured by electron energy loss spectroscopy, we suggest that, within MgO, iron with mixed oxidation state Fe2+ and Fe3+ or higher is found in the as-grown structure, which is reduced by annealing to Fe2+. These results indicate that the stoichiometry of as-deposited MgO barrier layers plays an important role in controlling the microstructure and optimizing the performance of magnetic tunnel junctions. [ABSTRACT FROM AUTHOR]

Spintronic devices that utilize spin transfer torque are promising for integrated memory applications. However, these devices face substantial energy consumption challenges due to the high current densities required for switching. Conversely, voltage‐driven spintronic devices, using capacitive displacement charge, can realize switching operations that are energy‐efficient (≈1–10 fJ bit−1). This work investigates switching based on voltage control of the interlayer exchange coupling in perpendicular magnetic anisotropy (PMA) multilayered heterostructures. Unlike previous works that utilized gating techniques that employ ionic transport mechanisms to control interlayer exchange coupling, this study employs electrostatic gating by using MgO, which is more compatible with modern spintronic‐based memories. These results suggest that the magnetization anisotropy, and the magnitude, and phase of the Ruderman‐Kittel‐Kasuya‐Yosida (RKKY) coupling function with spacer layer thickness can be controlled through electric gating, providing a promising avenue for the development of energy‐efficient magnetic data storage devices. [ABSTRACT FROM AUTHOR]

The critical current density J c 0 required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (MRAM) cell is proportional to the product of the damping parameter, saturation magnetization, and thickness of the free layer, α M S t F. Conventional FLs have the structure CoFeB/nonmagnetic spacer/CoFeB. By reducing the spacer thickness, W in our case, and also splitting the single W layer into two layers of a sub-monolayer thickness, we have reduced t F while minimizing α and maximizing M S , ultimately leading to lower J c 0 while maintaining high thermal stability. Bottom-pinned MRAM cells with a device diameter in the range of 55–130 nm were fabricated, and J c 0 is the lowest for the thinnest (1.2 nm) FLs, down to 4 MA / cm 2 for 65 nm devices, ∼ 30 % lower than 1.7 nm FLs. The thermal stability factor Δ dw , as high as 150 for the smallest device size, was determined using a domain wall reversal model from field-switching probability measurements. With high Δ dw and the lowest J c 0 , the thinnest FLs have the highest spin-transfer torque efficiency. [ABSTRACT FROM AUTHOR]

Spin-transfer torque (STT) magnetic random access memory (MRAM) is gaining commercial traction in low-density embedded and standalone memories, but the available market opportunities would grow exponentially if STT-MRAM could approach dynamic random access memory (DRAM) bit density. Of course, achieving DRAM density will require, among other things, demonstrating the ability to pattern MRAM bits at an extremely tight pitch. Here, an experimental demonstration of fabrication and electrical testing of a STT-MRAM bit array are reported. By optimizing the hard mask and ion beam etching (IBE) processes, MRAM bit arrays with a full pitch down to 50 nm are fabricated, in which the bits are individually tested using a novel bottom-point-contact method. [ABSTRACT FROM AUTHOR]

Electric manipulation of magnetization is essential for the integration of magnetic functionalities in integrated circuits. Spin-orbit torque (SOT), originating from the coupling of electron spin and orbital motion through spin-orbital interaction, can effectively manipulate magnetization. Symmetry breaking plays an important role in spintronics based on SOT. SOT requires inversion asymmetry in order to have a net effect on magnetic materials, which is commonly realized by spatial asymmetry: a thin magnetic layer sandwiched between two dissimilar layers. This kind of structure restricts the SOT by mirror and rotational symmetries to have a particular form: an “antidamping-like” component oriented in the film plane even upon reversal of the magnetization direction. Consequently, magnetization perpendicular to the film plane cannot be deterministically switched with pure electric current. To achieve all-electric switching of perpendicular magnetization, it is necessary to break the mirror and rotational symmetries of the sandwiched structure. [ABSTRACT FROM AUTHOR]

The relevance of anisotropic heatsinks for heat-assisted magnetic recording (HAMR) is investigated. First, 3-D thermal modeling is used to demonstrate that the heatsink performance on a glass substrate is determined by the heatsink in-plane thermal conductivity. The out-of-plane thermal conductivity has almost no impact on the heatsink ability to carry heat away from the hot spot. As a result, an anisotropic heatsink can be a good alternative to some conventional isotropic heatsink materials when its in-plane thermal conductivity is larger than that of the isotropic material. Second, time-domain thermo-reflectance (TDTR) measurements are presented to extract both the in-plane and the out-of-plane thermal conductivities of a (Cu/Ta) multilayer heatsink. The sensitivity to in-plane thermal conductivity is achieved by using small laser beam sizes and by combining measurements at multiple modulation frequencies on both a low and a high thermally conductive substrate. The fitting of all TDTR spectra gives for the (Cu[5.1]/Ta[1.4]) multilayers an effective out-of-plane thermal conductivity of 11.5 W/mK and an in-plane thermal conductivity of 69 W/mK. These thermal properties make such multilayer material an interesting candidate as HAMR heatsink, equivalent to a 70 W/mK isotropic material. [ABSTRACT FROM AUTHOR]

Highly chemically ordered L10 FePtX-Y nano-granular films with high perpendicular magnetic anisotropy are key media approaches for future heat-assisted magnetic recording (HAMR). They are sputtered at elevated temperature on glass disks coated with adhesion, heat sink, and texturing layers. Adding X = Ag reduces the required deposition temperature and X = Cu lowers the Curie temperature. Current seed layers are NiTa for adhesion and heat sink and well-oriented MgO (002) layers for highly textured FePtX(002) grains surrounded by Y = carbon and/or other segregants. Magnetic anisotropies larger than 4.5 × 107 erg cm−3 and coercivities beyond 5 Tesla have been achieved. The combination of thermal conductivity and Curie temperature determines the required laser power during recording. Key goals are to optimize media, heads, head-disk-spacing, and read-back channels to extend the areal density to 1.5-5 Tb in−2. Head and media in heat-assisted magnetic recording1. LD, laser diode; TFC, thermal fluctuation control; NFT, near field transducer. 1Lidu Huang et al., 'HAMR Thermal Modeling Including Media Hot Spot', APMRC 2012. [ABSTRACT FROM AUTHOR]

The structural, electronic and dielectric properties of high-quality ultrathin BaTiO3 films were investigated. The films, which were grown by ozone-assisted molecular beam epitaxy on Nb-doped SrTiO3(001) substrates and have thicknesses as low as 8 unit cells (u.c.) (3.2 nm), are unreconstructed and atomically smooth with large crystalline terraces. A strain-driven transition to three-dimensional (3D) island formation is observed for films of 13 u.c. thickness (5.2 nm). The high structural quality of the surfaces, together with dielectric properties similar to bulk BaTiO3 and dominantly TiO2 surface termination, makes these films suitable templates for the synthesis of high-quality metaloxide multiferroic heterostructures for the fundamental study and exploitation of magneto-electric effects, such as a recently proposed interface effect in Fe/BaTiO3 heterostructures based on Fe-Ti interface bonds. [ABSTRACT FROM AUTHOR]

The article describes the development of spin-polarized tunneling. It notes that the suitability of aluminum (Al) properties makes the occurrence of the discovery of SPT striking and that the Al's ultrathin oxide films make ideal tunnel barriers. As indicated, the phenomena of spin-polarizing and spin-filtering is important n various spintronics applications such as universal memory, programmable gate, and the electrical injection of spin into semiconductors. INSET: Spin polarization in tunneling experiments.

Photon absorption by carbon nanotubes creates bound electron–hole pairs called excitons, which can exist in spin-polarized triplet or spin-unpolarized singlet configurations. Triplet excitons are optically inactive owing to the weak spin–orbit coupling in nanotubes. This prevents the optical injection of electron spin into nanotubes for spintronic applications and limits the efficiency of photocurrent generation. Here, we show that it is possible to optically excite the triplet exciton by using a ferromagnetic semiconductor as a spin filter to mix the singlet and triplet excitons. The triplet contribution to the photocurrent is detected, representing the first direct evidence of the triplet exciton in carbon nanotubes. [ABSTRACT FROM AUTHOR]

Nanoscale surface modification of a fractured Nb-doped SrTiO3 surface is demonstrated in a controlled way by scanning tunneling microscopy. By applying positive voltage pulses, holes can be created and the width and depth of the hole can be controlled by selecting the appropriate bias and pulse duration. The process shows a threshold condition for creation of the holes and change in the local electronic density of state consistent with exposure of the underlying TiO2 layer by removal of SrO. By applying negative bias, the hole can be partially refilled from the transfer of adsorbates on the tip. [ABSTRACT FROM AUTHOR]

This work investigates the magnetocaloric effect of two epitaxial manganite heterostructures, one being a single layer La0.56Sr0.44MnO3 alloy with randomly distributed La and Sr cations, the other a digitally synthesized superlattice of LaMnO3 and SrMnO3 fabricated to be compositionally identical to the alloy. The magnetic entropy change and relative cooling power were larger for the alloy than the superlattice, though both are suppressed relative to bulk materials. These results indicate that disorder of the A-site cation species in the perovskite structure may play a crucial role in defining the magnetocaloric effect in complex oxide materials. [ABSTRACT FROM AUTHOR]