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Copper‐based halides have emerged as promising scintillator materials for X‐ray imaging due to their favorable photophysical characteristics, such as negligible self‐absorption, high light output, and fast decay. Among these materials, Cs3Cu2I5, a blue emitter, currently delivers the highest scintillation light output under steady‐state X‐rays. However, there is a significant spectral mismatch between its emission band and the spectral responsivity of regular flat‐panel photodiode arrays. In this study, a comprehensive analysis of the physical properties of the CsCu2I3 scintillator is conducted, and its perfect spectral compatibility is discovered, which results in a higher photodiode signal despite its relatively lower light output compared to typical Cs3Cu2I5 scintillators. Furthermore, CsCu2I3 exhibits faster light decay properties, making it especially suitable for Computed Tomography (CT) X‐ray imaging. High‐quality X‐ray cone beam computed tomography (CBCT) imaging is successfully demonstrated using the fast‐decaying CsCu2I3 scintillator screen. Additionally, the flexibility of the scintillator allows for non‐planar imaging, showcasing advantages not available with traditional rigid scintillators. These results not only highlight the significant promise of the CsCu2I3 scintillator but also emphasize the necessity of considering spectral compatibility when designing novel scintillator materials. [ABSTRACT FROM AUTHOR]

Spatial profile of the charge storage in the pentacene-based field-effect transistor nonvolatile memories using poly(2-vinyl naphthalene) electret is probed. The electron trapping into the electret after programming can be space dependent with more electron storage in the region closer to the contacts, and reducing the channel length is an effective approach to improve the memory performance. The deficient electron supply in pentacene is proposed to be responsible for the inhomogeneous electron storage in the electret. The hole trapping into the electret after erasing is spatially homogeneous, arising from the sufficient hole accumulation in the pentacene channel. [ABSTRACT FROM AUTHOR]

Pentacene-based organic field-effect transistor nonvolatile memories employing nano-floating-gate show high performance in vacuum, typically with field-effect mobility of 0.6 cm2/Vs, memory window of 45 V, reading ON/OFF ratio over 106, and excellent retention ability and programming/erasing endurance. The memory performance is unstable in air, which is demonstrated to result mainly from the device operation instability in O2. The O2-induced acceptor-like trap states reduce the electron supply in pentacene during programming, limiting the electron trapping into the nano-floating-gate and thus suppressing the positive threshold voltage shift. The corresponding hole trapping during erasing is not effectively influenced by the ambient gas effects. [ABSTRACT FROM AUTHOR]

Bilayer polymer dielectrics consisting of hydrophobic thin layers on high-k polyvinylalcohol (PVA) are utilized to realize p-type and n-type low-voltage organic field-effect transistors (OFETs), which show superior mobility and operational stability compared with the devices with PVA single-layer dielectric. The OFETs with top layers containing discrete π-groups, such as polystyrene (PS) and poly(2-vinyl naphthalene) (PVN), show stronger bias stress instability than those with π-group free polymethylmethacrylate (PMMA), and it is ascribed to slow charge trapping into the π-groups under bias stress. By integrating p-type and n-type low-voltage OFETs based on PMMA/PVA bilayer dielectric, a low-power high-stability complementary inverter is achieved. [ABSTRACT FROM AUTHOR]

High performance organic field-effect transistor nonvolatile memory is achieved by integrating gold nanoparticles and graphene oxide sheets as the hybrid nano-floating-gate. The device shows a large memory window of about 40 V, high ON/OFF ratio of reading current over 104, excellent programming/erasing endurance, and retention ability. The hybrid nano-floating-gate can increase the density of charge trapping sites, which are electrically separate from each other and thus suppress the stored charge leakage. The memory window is increased under illumination, and the results indicate that the photon-generated carriers facilitate the electron trapping but have almost no effect on the hole trapping. [ABSTRACT FROM AUTHOR]

Organic-based complementary inverter could be a key component in future flexible and portable electronic products, which require low-power operation, high operating stability and flexible compatibility at the same time. A simple method for making excellent Al 2 O 3 gate dielectric is developed toward the target, and it is a low-cost solution process with a low annealing temperature compatible with plastic substrates. Utilizing the Al 2 O 3 dielectric, both p-type and n-type low-voltage organic field-effect transistors (OFETs) are realized. The device operating voltage is down to ±3 V, and the On/Off ratio is up to 10 6 . The hole and electron field-effect mobilities are 2.7 cm 2 /V and 0.2 cm 2 /V, respectively, and the subthreshold swing is as small as about 110 mV/decade. The high quality of the Al 2 O 3 dielectric results in high operating stability of the devices. The p-type and n-type OFETs are integrated to achieve a low-power complementary inverter with a large gain, which can be successfully fabricated on a flexible substrate. [ABSTRACT FROM AUTHOR]