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4. Demonstration of a HV BCD technology with LV CMOS process

7. A floating well method for exact capacitance-voltage measurement of nano technology

8. 0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V

9. Failure mechanism for input buffer under CDM test

13. Using LV process to design high voltage DDDMOSFET and LDMOSFET with 3-D profile structure.

14. Bi-Mode Breakdown Test Methodology of Ultrathin Oxide

18. Improving the Electrostatic Discharge Robustness of a Junction Barrier Schottky Diode Using an Embedded p-n-p BJT.

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