1. Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing.
- Author
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Kim, Si Joon, Jung, Yong Chan, Mohan, Jaidah, Kim, Hyo Jeong, Rho, Sung Min, Kim, Min Seong, Yoo, Jeong Gyu, Park, Hye Ryeon, Hernandez-Arriaga, Heber, Kim, Jin-Hyun, Kim, Hyung Tae, Choi, Dong Hyun, Jung, Joohye, Hwang, Su Min, Sejoon Kim, Harrison, Kim, Hyun Jae, and Kim, Jiyoung
- Subjects
FERROELECTRIC capacitors ,FERROELECTRIC thin films ,FERROELECTRIC devices ,DIELECTRIC properties ,LEAD titanate ,LOW temperatures - Abstract
In this Letter, a high-pressure annealing (HPA) process is proposed as a way to reduce the thermal budget of Hf
0.5 Zr0.5 O2 (HZO) thin films with ferroelectric behaviors. The low-thermal-budget process is essential for integrating ferroelectric devices in the back-end-of-line to provide more functionalities and effective memory area. For the HZO film annealed at 300 °C using the HPA process, an orthorhombic phase responsible for ferroelectric behavior was formed with a decrease in film thickness, resulting in a remanent polarization (Pr ) of ∼13 μC/cm2 (i.e., 2Pr of ∼26 μC/cm2 ). Meanwhile, when only the annealing time was increased at 300 °C without applying pressure, the HZO film did not crystallize and exhibited linear dielectric properties. Consequently, the HZO films (<10 nm) can be crystallized by applying pressure (15 atm) even at low temperatures of 300 °C, thereby obtaining ferroelectric properties. [ABSTRACT FROM AUTHOR]- Published
- 2021
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