1. Modelling and Diagnostics of Damages and Strains in a Crystal of Gd3Ga5O12 After Implantation of F+ Ions
- Author
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V. O. Kotsyubyns’kyy, V. M. Pylypiv, B. K. Ostafiychuk, I. P. Yaremiy, O. Z. Garpul’, S. J. Olikhovskyy, O. S. Skakunova, V. B. Molodkin, Ye. M. Kyslovs’kyy, T. P. Vladimirova, O. V. Reshetnyk, Ye. V. Kochelab
- Subjects
Physics ,QC1-999 - Abstract
Mathematical modelling of fluorine ion implantation process is carried out by using the SRIM-2008 program for the determination of quantitative characteristics of the radiation defect formation in the gadolinium–gallium garnet (GGG). The crystal depth distributions are measured for elastic and inelastic energy losses of both the implanted F+ ion with 90 keV energy and the displaced matrix ions due to their slowing-down in the GGG crystal. Depth distribution profiles are obtained for quantities of implanted and displaced ions. The damage pattern and its quantitative characteristics are determined. Structural changes caused by fluorine ion implantation in a surface layer of the GGG single crystal are investigated by an X-ray diffraction technique. The shape of the strain profile in the implanted layer and relationships of its characteristics with the simulation results are determined.
- Published
- 2014
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