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The dc performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10/sup -12/ to 10/sup -1/ A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9/spl times/10/sup -12/ A (1.56 /spl times/10/sup -7/ A/cm/sup 2/). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

The high-performance n + -GaAs/p + -InGaP/n-GaAs high-barrier gate camel-like HFETs are successfully fabricated and demonstrated. The p + -InGaP layer is introduced to increase the barrier height and carrier confinement. Experimentally, good DC and AC device performances are obtained. For the studied 1×100 μm 2 device A (B), a gate–drain turn-on voltage of 1.6 (1.2) V, gate–drain breakdown voltage over 40 V with low leakage current of 400 (37) μA/mm, drain–source off-state breakdown voltage of 38 (39.7) V, maximum transconductance g m,max of 145 (147) mS/mm, unity current gain cut-off frequency f T of 17 (15) GHz, and maximum oscillation frequency f max of 33 (28) GHz are obtained, respectively, at room temperature. Moreover, the studied devices also show significantly wide and flat I DS operation regimes of g m , f T and f max .

The InP/InGaAs and InGaP/GaAs superlattice emitter resonant tunneling bipolar transistors (SE-RTBTs) have been fabricated and demonstrated. By the employment of five-period superlattice in the emitter layer, the RT effect in saturation regime is observed at 77 K for InP/InGaAs SE-RTBT. In addition, due to the larger valence band discontinuity ΔE V at InGaP/GaAs heterojunction, the RT effect is observed both in saturation and forward active regimes at 300 K for InGaP/GaAs SE-RTBT. The confinement effect for minority carriers is enhanced due to the insertion of superlattice. The common emitter current gains up to 170 and 220 are observed for InP/InGaAs and InGaP/GaAs SE-RTBTs, respectively. Lower offset voltages of about 125 mV are observed in the studied devices.

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.