404 results on '"Yakushev, M."'
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2. Temperature Dependence of Optical Reflection Spectra of Cuinse2 Single Crystals with the Chalcopyrite Structure
3. Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures
4. Mechanisms of Current Formation in nBn Structures Based on HgCdTe with a Superlattice in the Barrier Region
5. Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te
6. Temperature Dependence of the Spectra of Optical Constants of CdTe in the Region of the Absorption Edge
7. Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films
8. In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride
9. Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy
10. Experimental Study of NBνN Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors
11. Wet Chemical Methods of HgCdTe Surface Treatment
12. Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe
13. Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films
14. Admittance of barrier nanostructures based on MBE HgCdTe
15. Splitting of the absorption edge in the topological insulator Bi1.1Sb0.9Te2S: mid-infrared magneto-optical study.
16. Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers
17. Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors
18. Admittance of MIS Structures Based on nBn Systems of Epitaxial HgCdTe for Detection in the 3–5 μm Spectral Range
19. An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy
20. Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures
21. Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques
22. Structural Characteristics and Photoluminescence of Thin Films of Cu(In1–xgax)(Syse1–y)2 Solid Solutions
23. The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films
24. Radiative Recombination at Ion-Induced Defects in Cu(In,Ga)Se2 Alloy Thin Films
25. Investigation of the Temperature Dependence of the Spectra of Optical Constants of Hg1 – xCdхTe Films Grown Using Molecular Beam Epitaxy
26. Optical and Structural Properties of HgCdTe Solid Solutions with a High CdTe Content
27. Parametric Model of the Optical Constant Spectra of Hg1 – xCdxTe and Determination of the Compound Composition
28. Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy
29. Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride
30. Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells
31. Molecular Beam Epitaxy of CdHgTe: Current State and Horizons
32. The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface
33. TEM studies of structural defects in HgTe/HgCdTe quantum wells
34. Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8
35. Admittance of Barrier Structures Based on Mercury Cadmium Telluride
36. Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE
37. Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques
38. Rural area infrastructure as a factor in the development of organic farming
39. Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells.
40. Temperature Dependence of Optical Reflection Spectra of Cuinse2 Single Crystals with the Chalcopyrite Structure.
41. Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers
42. HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector
43. Possibilities of Characterizing the Crystal Parameters of CdxHg1 – xTe Structures on GaAs Substrates by the Method of Generation of the Probe-Radiation Second Harmonic in Reflection Geometry
44. Express Characterization of Crystalline Perfection of CdxHg1−xTe Structures by Reflection Second Harmonic Generation of Probing Radiation
45. A Megapixel Matrix Photodetector of the Middle Infrared Range
46. Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns
47. An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions
48. Excitons in PL Spectra of Cu(In,Ga)Se2 Single Crystals
49. A PL and PLE Study of High Cu Content Cu2ZnSnSe4 Films on Mo/Glass and Solar Cells
50. Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te.
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