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This paper develops a thermoelectric (TE)–piezoelectric (PE) hybrid structure with the PE layer acting as both a support membrane and a sensor for the TE film for microelectronics applications. The TE and PE layers are assumed to be perfectly bonded mechanically and thermally but electrically shielded and insulated with each other. The thermo-electro-mechanical responses of the hybrid bilayer under the TE generator operation conditions are obtained, and the influence of the PE layer on the TE energy conversion efficiency is investigated. The numerical results for a Bi2Te3/PZT-5H bilayer structure show that large compressive stresses develop in both the PE and TE layers. With a decrease in the PE layer thickness, the magnitude of the maximum compressive stress in the PE layer increases whereas the maximum magnitude of the stress in the TE layer decreases. The numerical result of the TE energy conversion efficiency shows that increasing the PE layer thickness leads to lower energy conversion efficiencies. A nearly 40% reduction in the peak efficiency is observed with a PE layer of the same thickness as that of the TE layer. These results suggest that design of TE films with supporting/sensing membranes must consider both aspects of energy conversion efficiency and the thermomechanical reliability of both the TE and PE layers. [ABSTRACT FROM AUTHOR]

We study temperature effects in piezoelectric semiconductor thin films through pyroelectric and thermoelastic as well as piezoelectric couplings. Two-dimensional equations based on the macroscopic theory of piezoelectric semiconductors for extensional deformations of the films are used. A p-type ZnO film with an in-plane c-axis is analyzed. It is shown through a linear and theoretical analysis that a local temperature change produces a pair of a potential barrier and a well in the film. A nonlinear numerical analysis is then performed when a voltage is also applied, showing that the potential barrier blocks the in-plane motion of the holes and thus affects the current density distribution. The effects of various physical and geometric parameters are examined. The results obtained provide the theoretical foundation for thermally manipulating currents in piezoelectric semiconductor films for piezotronic applications. [ABSTRACT FROM AUTHOR]

We study antiplane problems of saturated ferromagnetoelastic solids. Tiersten's equations for saturated ferromagnetoelastic insulators under biasing fields are used. For antiplane problems of cubic crystals, coordinate-independent equations for the divergence and curl of the incremental magnetization vector are derived. Trigonometric series solutions for a rectangular body under a static and local mechanical load and the free vibration frequencies and modes of a rectangular body are obtained. The interactions between mechanical and magnetic fields are examined. [ABSTRACT FROM AUTHOR]

We study electromechanical fields in a thin composite beam of a flexoelectric semiconductor layer sandwiched between two piezomagnetic dielectric layers induced by an applied magnetic field. The macroscopic theory of piezomagnetics and flexoelectric semiconductors is used. A one-dimensional model is derived from the three-dimensional equations. Responses under static and time-harmonic magnetic fields are obtained analytically from the model. Results show magnetically induced bending deformation and redistribution or motion of charge carriers toward the top and bottom of the beam through combined piezomagnetic and flexoelectric couplings. A coupling coefficient depending on the physical and geometric parameters of the structure is introduced to characterize the strength of the effect. The coupling coefficient assumes a maximum for a specific thickness ratio of the piezomagnetic and semiconductor layers. The results are fundamental to the emerging field of flexoelectronics when magnetic fields are involved. [ABSTRACT FROM AUTHOR]

We study the interaction between mechanical fields and the motion of charge carriers in a composite beam of flexoelectric (nonpiezoelectric) and semiconductor layers. The macroscopic theory of flexoelectricity and the drift-diffusion theory of semiconduction are used. They are coupled by doping and mobile charges in Gauss's equation of electrostatics. A one-dimensional electromechanical model is established for the bending of the beam. Solutions from the model show that bending of the beam induces redistribution of charge carriers through the electric field produced by flexoelectric coupling. This provides a new means for constructing electromechanical semiconductor devices and extends piezotronic devices. [ABSTRACT FROM AUTHOR]

We study the electrical behavior of a piezoelectric semiconductor fiber under local extensional or compressive stress and an applied voltage. A numerical analysis based on a one-dimensional phenomenological model is performed. The current-voltage relation is obtained. It is found that when the applied voltage is below a stress-dependent critical value, no current can flow through the fiber in either direction. When the voltage is above the critical voltage, currents can flow in one direction but not the other. When the voltage is above a second critical value, currents can flow in both directions. Thus, the local stress acts like a switch, which can turn the currents on and off in one or both directions. This provides a basic means for mechanically manipulating the electrical behavior of piezoelectric semiconductor fibers and thus serves as a fundamental element of piezotronics. [ABSTRACT FROM AUTHOR]