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Due to the increasing complexity of microelectromechanical system (MEMS) devices, the accuracy and precision of two-dimensional microstructures of SU-8 negative thick photoresist have drawn more attention with the rapid development of UV lithography technology. This paper presents a high-precision lithography simulation model for thick SU-8 photoresist based on waveguide method to calculate light intensity in the photoresist and predict the profiles of developed SU-8 structures in two dimension. This method is based on rigorous electromagnetic field theory. The parameters that have significant influence on profile quality were studied. Using this model, the light intensity distribution was calculated, and the final resist morphology corresponding to the simulation results was examined. A series of simulations and experiments were conducted to verify the validity of the model. The simulation results were found to be in good agreement with the experimental results, and the simulation system demonstrated high accuracy and efficiency, with complex cases being efficiently handled.

Various multilayered thin films are extensively used as the basic component of some micro-electro-mechanical systems, requiring an efficient measurement method for material parameters, such as Young’s modulus, residual stress, etc. This paper developed a novel measurement method to extract the Young’s moduli and residual stresses for individual layers in multilayered thin films, based on the first resonance frequency measurements of both cantilever beams and doubly-clamped beams. The fabrication process of the test structure, the corresponding modeling and the material parameter extraction process are introduced. To verify this method, the test structures with gold/polysilicon bilayer beams are fabricated and tested. The obtained Young’s moduli of polysilicon films are from 151.38 GPa to 154.93 GPa, and the obtained Young’s moduli of gold films are from 70.72 GPa to 75.34 GPa. The obtained residual stresses of polysilicon films are from −14.86 MPa to −13.11 MPa (compressive stress), and the obtained residual stresses of gold films are from 16.27 to 23.95 MPa (tensile stress). The extracted parameters are within the reasonable ranges, compared with the available results or the results obtained by other test methods.

Thick SU-8 photoresist has been a popular photoresist material to fabricate various mechanical, biological, and chemical devices for many years. The accuracy and precision of the ultraviolet (UV) lithography process of thick SU-8 depend on key parameters in the set-up, the material properties of the SU-8 resist, and the thickness of the resist structure. As feature sizes get smaller and pattern complexity increases, accurate control and efficient optimization of the lithography process are significantly expected. Numerical simulations can be employed to improve understanding and process design of the SU-8 lithography, thereby allowing rapid related product and process development. A typical comprehensive lithography of UV lithography of thick SU-8 includes aerial image simulation, exposure simulation, post-exposure bake (PEB) simulation, and development simulation, and this article presents an overview of the essential aspects in the comprehensive simulation. At first, models for the lithography process of the SU-8 are discussed. Then, main algorithms for etching surface evolvement, including the string, ray tracing, cellular automaton, and fast marching algorithms, are introduced and compared with each other in terms of performance. After that, some simulation results of the UV lithography process of the SU-8 are presented, demonstrating the promising potential and efficiency of the simulation technology. Finally, a prospect is discussed for some open questions in three-dimensional (3D) comprehensive simulation of the UV lithography of the SU-8.

A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution. The advanced level set method is implemented to simulate the time-related movements of etched surface. In the meanwhile, accelerated by ray tracing algorithm, the Monte Carlo method incorporates all dominant physical and chemical mechanisms such as ion-enhanced etching, ballistic transport, ion scattering, and sidewall passivation. The modified models of charged particles and neutral particles are epitomized to determine the contributions of etching rate. The effects such as scalloping effect and lag effect are investigated in simulations and experiments. Besides, the quantitative analyses are conducted to measure the simulation error. Finally, this simulator will be served as an accurate prediction tool for some MEMS fabrications.

A microstructure beam is one of the fundamental elements in MEMS devices like cantilever sensors, RF/optical switches, varactors, resonators, etc. It is still difficult to precisely predict the performance of MEMS beams with the current available simulators due to the inevitable process deviations. Feasible numerical methods are required and can be used to improve the yield and profits of the MEMS devices. In this work, process deviations are considered to be stochastic variables, and a newly-developed numerical method, i.e., generalized polynomial chaos (GPC), is applied for the simulation of the MEMS beam. The doubly-clamped polybeam has been utilized to verify the accuracy of GPC, compared with our Monte Carlo (MC) approaches. Performance predictions have been made on the residual stress by achieving its distributions in GaAs Monolithic Microwave Integrated Circuit (MMIC)-based MEMS beams. The results show that errors are within 1% for the results of GPC approximations compared with the MC simulations. Appropriate choices of the 4-order GPC expansions with orthogonal terms have also succeeded in reducing the MC simulation labor. The mean value of the residual stress, concluded from experimental tests, shares an error about 1.1% with that of the 4-order GPC method. It takes a probability around 54.3% for the 4-order GPC approximation to attain the mean test value of the residual stress. The corresponding yield occupies over 90 percent around the mean within the twofold standard deviations.

In the fabrication of micro-electro-mechanical systems (MEMS) devices, manufacturing process variations are usually involved. For these devices sensitive to process variations such as doubly-clamped beams, mismatches between designs and final products will exist. As a result, it underlies yield problems and will be determined by design parameter ranges and distribution functions. Topographical changes constitute process variations, such as inclination, over-etching, and undulating sidewalls in the Bosch process. In this paper, analytical models are first developed for MEMS doubly-clamped beams, concerning the mentioned geometrical variations. Then, finite-element (FE) analysis is performed to provide a guidance for model verifications. It is found that results predicted by the models agree with those of FE analysis. Assigning process variations, predictions for performance as well as yield can be made directly from the analytical models, by means of probabilistic analysis. In this paper, the footing effect is found to have a more profound effect on the resonant frequency of doubly-clamped beams during the Bosch process. As the confining process has a variation of 10.0%, the yield will have a reduction of 77.3% consequently. Under these circumstances, the prediction approaches can be utilized to guide the further MEMS device designs.

This paper presents an intuitive yet effective in-situ thermal diffusivity testing structure and testing method. The structure consists of two doubly clamped beams with the same width and thickness but different lengths. When the electric current is applied through two terminals of one beam, the beam serves as thermal resistor and the resistance R(t) varies as temperature rises. A delicate thermodynamic model considering thermal convection, thermal radiation, and film-to-substrate heat conduction was established for the testing structure. The presented in-situ thermal diffusivity testing structure can be fabricated by various commonly used micro electro mechanical systems (MEMS) fabrication methods, i.e., it requires no extra customized processes yet provides electrical input and output interfaces for in-situ testing. Meanwhile, the testing environment and equipment had no stringent restriction, measurements were carried out at normal temperatures and pressures, and the results are relatively accurate.

Based on the first resonance frequency measurement of multilayer beams, a simple extraction method has been developed to extract the Young's modulus of individual layers. To verify this method, the double-layer cantilever, as a typical example, is analyzed to simplify the situation and finite element modeling (FEM) is used in consideration of the buckling and unbuckling situation of cantilevers. The first resonance frequencies, which are obtained by ANSYS (15.0, ANSYS Inc., Pittsburgh, PA, USA) with a group of thirteen setting values of Young's modulus in the polysilicon layer are brought into the theoretical formulas to obtain a new group of Young's modulus in the polysilicon layer. The reliability and feasibility of the theoretical method are confirmed, according to the slight differences between the setting values and the results of the theoretical model. In the experiment, a series of polysilicon-metal double-layer cantilevers were fabricated. Digital holographic microscopy (DHM) (Lyncée Tech, Lausanne, Switzerland) is used to distinguish the buckled from the unbuckled. A scanning laser Doppler vibrometer (LDV) (Polytech GmbH, Berlin, Germany) system is used to measure the first resonance frequencies of them. After applying the measurement results into the theoretical modulus, the average values of Young's modulus in the polysilicon and gold layers are 151.78 GPa and 75.72 GPa, respectively. The extracted parameters are all within the rational ranges, compared with the available results. [ABSTRACT FROM AUTHOR]

In this research, micromachined devices consisting of four micro-rotating structures for the in situ determination of the thermal expansion coefficient (TEC), tensile and compressive residual stress of polysilicon thin films are studied. The structures are heated electrically and deflect due to the thermal expansion. The lateral displacements of the devices are related to the thermal stress and residual stress of the test beams. The micro-rotating structures are arranged, so that the lateral displacements are designed to be either a constant value which is used to determine the TEC of the thin film or a variable value that changes with the residual stress of the thin film. An analytical model of the test structure is presented. The finite element software ANSYS is used to verify the analytical model and provide guidelines for the structure design. Experimental results with a surface micromachined polysilicon thin film are used to demonstrate the proposed method. In the experiments, a current-voltage measurement system only is required. The TEC for the polysilicon thin film is obtained to be (2.61 ± 0.04) × 10-6 K-1 from 400 to 420 K and the residual stress is measured as -(10.15 ± 0.70) MPa. [ABSTRACT FROM AUTHOR]

A model for silicon anisotropic etching in alkaline solutions is developed based on the surface atom configurations on different crystal planes. The surface atoms are divided into categories according to the atom configurations, and the microscopic etch rates of surface atoms are related to the macroscopic etch rates of different silicon crystal planes. The microscopic activation energies for some typical surface atoms are further calculated by the microscopic etch rates for surface atoms to simplify the fitting procedures. The model has been extended to a simulation system based on a dynamic cellular automaton method, and a series of simulations has been performed using the simulation system for various etching conditions. The simulation results demonstrate agreement with the experimental results. [ABSTRACT FROM AUTHOR]