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One question in lymphocyte homing is how integrins are rapidly activated to enable immediate arrest of fast rolling lymphocytes upon encountering chemokines at target vascular beds given the slow chemokine-induced integrin inside-out activation. Herein we demonstrate that chemokine CCL25-triggered Ca2+ influx induces T cell membrane-proximal external Ca2+ concentration ([Ca2+]ex) drop in 6 s from physiological concentration 1.2 mM to 0.3 mM, a critical extracellular Ca2+ threshold for inducing αLβ2 activation, triggering rapid αLβ2 activation and T cell arrest before occurrence of αLβ2 inside-out activation. Talin knockdown inhibits the slow inside-out activation of αLβ2 but not [Ca2+]ex drop-triggered αLβ2 quick activation. Blocking Ca2+ influx significantly suppresses T cell rolling-to-arrest transition and homing to skin lesions in a mouse psoriasis model, thus alleviating skin inflammation. [Ca2+]ex decrease-triggered rapid integrin activation bridges the gap between initial chemokine stimulation and slow integrin inside-out activation, ensuring immediate lymphocyte arrest and subsequent diapedesis on the right location. Lymphocytes need to be slowed down rapidly to enter tissues. Here the authors characterise the arrest of lymphocytes and using a calcium biosensor propose that a rapid drop in extracellular calcium concentration results in integrin activation and lymphocyte arrest. [ABSTRACT FROM AUTHOR]

Phase-change random-access memory (PCRAM) holds great promise for next-generation information storage applications. As a mature phase change material, Ge2Sb2Te5 alloy (GST) relies on the distinct electrical properties of different states to achieve information storage, but there are relatively few studies on the relationship between electron transport and microstructure. In this work, we found that the first resistance dropping in GST film is related to the increase of carrier concentration, in which the atomic bonding environment changes substantially during the crystallization process. The second resistance dropping is related to the increase of carrier mobility. Besides, during the cubic to the hexagonal phase transition, the nanograins grow significantly from ~50 nm to ~300 nm, which reduces the carrier scattering effect. Our study lays the foundation for precisely controlling the storage states of GST-based PCRAM devices. [ABSTRACT FROM AUTHOR]

Atomic-resolution Cs-corrected scanning transmission electron microscopy revealed local shifting of two oxygen positions (OI and OII) within the unit cells of a ferroelectric (Hf0.5Zr0.5)O2 thin film. A reversible transition between the polar Pbc21 and antipolar Pbca phases, where the crystal structures of the 180° domain wall of the Pbc21 phase and the unit cell structure of the Pbca phase were identical, was induced by applying appropriate cycling voltages. The critical field strength that determined whether the film would be woken up or fatigued was ~0.8 MV/cm, above or below which wake-up or fatigue was observed, respectively. Repeated cycling with sufficiently high voltages led to development of the interfacial nonpolar P42/nmc phase, which induced fatigue through the depolarizing field effect. The fatigued film could be rejuvenated by applying a slightly higher voltage, indicating that these transitions were reversible. These mechanisms are radically different from those of conventional ferroelectrics. HfO2-based ferroelectric films are attracting a great deal of attention. Here, the authors conclude that the performance degradation and the possible rejuvenation are ascribed to the reversible transition between polar and antipolar phases. [ABSTRACT FROM AUTHOR]

HfO2-ZrO2 superlattice (SL) ferroelectric (FE) capacitor is demonstrated to have improved endurance performance and higher fatigue recovery capability compared to the HfZrOx (HZO) device. During the cycling of polarization (${P}$) vs. voltage (${V}$) loops, the SL metal-FE-metal (MFM) capacitor exhibits the higher ${P}$ and the lower leakage current over the HZO device indicating the lower defect density in SL. The SL capacitor achieves an endurance of ${5}\times {10} ^{{12}}$ cycles, which is three orders of magnitude higher than the HZO device. The ${P}$ fatigue of the SL capacitor can be fully recovered through a ~30 s break, and that of HZO is only partially recovered utilizing the higher field cycling. This is because the trapping/detrapping process significantly decreases in HfO2-ZrO2 SL over HZO capacitor by the reduced defect density. These results prove that the HfO2-ZrO2 SL is a promising technology for endurance unlimited FE random access memory. [ABSTRACT FROM AUTHOR]

Hafnia-based ferroelectric (FE) thin films have received extensive attention in both academia and industry, benefitting from their outstanding scalability and excellent CMOS compatibility. Hafnia-based FE capacitors in particular have the potential to be used in dynamic random-access memory (DRAM) applications. Obtaining fine structure characterization at ultra-high spatial resolution is helpful for device performance optimization. Hence, sample preparation by the focused ion beam (FIB) system is an essential step, especially for in situ biasing experiments in a transmission electron microscope (TEM). In this work, we put forward three tips to improve the success rate of in situ biasing experiments: depositing a carbon protective layer to position the interface, welding the sample on the top of the Cu column of the TEM grid, and cutting the sample into a comb-like shape. By these means, in situ biasing of the FE capacitor was realized in TEM, and electric-field-induced tetragonal (t-) to monoclinic (m-) structure transitions in Hf0.5Zr0.5O2 FE film were observed. The improvement of FIB sample preparation technology can greatly enhance the quality of in situ biasing TEM samples, improve the success rate, and extend from capacitor sample preparation to other types. [ABSTRACT FROM AUTHOR]